ONSEMI 2SA1774

2SA1774
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SC−75/SOT−416/SC−90
package which is designed for low power surface mount
applications, where board space is at a premium.
Features
•
•
•
•
•
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COLLECTOR
3
Reduces Board Space
High hFE, 210−460 (typical)
Low VCE(sat), < 0.5 V
Available in 8 mm, 7−inch/3000 Unit Tape and Reel
Pb−Free Packages are Available*
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
V(BR)CBO
−60
Vdc
Collector − Base Voltage
V(BR)CEO
−50
Vdc
Emitter − Base Voltage
V(BR)EBO
−6.0
Vdc
IC
−100
mAdc
Collector Current − Continuous
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Power Dissipation (Note 1)
Characteristic
PD
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
−55 ~ + 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR−4 glass epoxy printed circuit board using the
minimum recommended footprint.
3
1
2
SC−75
CASE 463−01
STYLE 1
MARKING DIAGRAM
F9 M G
G
1
F9 = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 6
1
Publication Order Number:
2SA1774/D
2SA1774
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage
(IC = −50 mAdc, IE = 0)
V(BR)CBO
−60
−
−
Vdc
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−50
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = −50 mAdc, IE = 0)
V(BR)EBO
−6.0
−
−
Vdc
Collector−Base Cutoff Current
(VCB = −30 Vdc, IE = 0)
ICBO
−
−
−0.5
nA
Emitter−Base Cutoff Current
(VEB = −5.0 Vdc, IB = 0)
IEBO
−
−
−0.5
mA
VCE(sat)
−
−
−0.5
Vdc
hFE
120
−
560
−
fT
−
140
−
MHz
COB
−
3.5
−
pF
Collector−Emitter Saturation Voltage (Note 2)
(IC = −50 mAdc, IB = −5.0 mAdc)
DC Current Gain (Note 2)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
Output Capacitance
(VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz)
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
ORDERING INFORMATION
Package
Shipping†
SC−75
3000 / Tape & Reel
2SA1774G
SC−75
(Pb−Free)
3000 / Tape & Reel
2SA1774T1
SC−75
3000 / Tape & Reel
SC−75
(Pb−Free)
3000 / Tape & Reel
Device
2SA1774
2SA1774T1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
2SA1774
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 25°C
120
VCE , COLLECTOR-EMITTER VOLTAGE (V)
300 mA
250
200
60
150
IB = 50 mA
0
3
6
12
9
10
0.1
15
1
10
100
VCE, COLLECTOR VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Figure 1. IC − VCE
Figure 2. DC Current Gain
2
900
TA = 25°C
800
1.5
1
0.5
700
600
500
400
300
TA = 25°C
VCE = 5 V
200
100
0
0.01
0.1
1
10
0
0.2
100
1
5
10
20
40
60
80
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Figure 4. On Voltage
13
14
12
12
11
10
9
8
7
6
0.5
IB, BASE CURRENT (mA)
C ob , CAPACITANCE (pF)
Cib, INPUT CAPACITANCE (pF)
TA = − 25°C
100
100
30
0
DC CURRENT GAIN
90
VCE = 10 V
TA = 25°C
TA = 75°C
COLLECTOR VOLTAGE (mV)
IC, COLLECTOR CURRENT (mA)
1000
100
150 200
10
8
6
4
2
0
1
2
3
0
4
0
VEB (V)
10
20
VCB (V)
Figure 5. Capacitance
Figure 6. Capacitance
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3
30
40
2SA1774
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−E−
2
3
b 3 PL
0.20 (0.008)
e
DIM
A
A1
b
C
D
E
e
L
HE
−D−
1
M
D
0.20 (0.008) E
HE
C
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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4
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For additional information, please contact your local
Sales Representative
2SA1774/D