2SA1774G, S2SA1774G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. http://onsemi.com Features • • • • • • Reduces Board Space High hFE, 210−460 (typical) Low VCE(sat), < 0.5 V Available in 8 mm, 7−inch/3000 Unit Tape and Reel S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SC−75 CASE 463 STYLE 1 COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector − Emitter Voltage V(BR)CBO −60 Vdc Collector − Base Voltage V(BR)CEO −50 Vdc Emitter − Base Voltage V(BR)EBO −6.0 Vdc IC −100 mAdc Symbol Max Unit Power Dissipation (Note 1) PD 150 mW Junction Temperature TJ 150 °C Collector Current − Continuous 1 BASE MARKING DIAGRAM F9 M G G THERMAL CHARACTERISTICS Characteristic Storage Temperature Range Tstg −55 ~ + 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR−4 glass epoxy printed circuit board using the minimum recommended footprint. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 9 1 2 EMITTER 1 F9 M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† 2SA1774G SC−75 (Pb−Free) 3,000/Tape & Reel S2SA1774G SC−75 (Pb−Free) 3,000/Tape & Reel 2SA1774T1G SC−75 (Pb−Free) 3,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: 2SA1774/D 2SA1774G, S2SA1774G ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0) IEBO Collector−Emitter Saturation Voltage (Note 2) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) DC Current Gain (Note 2) (VCE = −6.0 Vdc, IC = −1.0 mAdc) hFE Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) fT Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz) COB 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. http://onsemi.com 2 Min Typ Max −60 − − −50 − − −6.0 − − − − −0.5 − − −0.5 − − −0.5 120 − 560 − 140 − − 3.5 − Unit Vdc Vdc Vdc nA mA Vdc − MHz pF 2SA1774G, S2SA1774G TYPICAL ELECTRICAL CHARACTERISTICS 1.2 IC/IB = 10 TA = 150°C TA = −55°C 0.01 0.1 1.0 10 TA = −55°C 0.8 TA = 25°C 0.7 0.6 TA = 150°C 0.5 0.4 0.3 100 0.2 0.1 1000 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 2. Base−Emitter Saturation Voltage vs. Collector Current VCE = 6 V TA = 150°C TA = 25°C TA = −55°C 100 1 0.9 0.8 0.7 1.0 10 100 1000 TA = 25°C IC = 100 mA 1.8 1.6 IC = 50 mA 1.4 1.2 IC = 30 mA 1.0 0.8 IC = 10 mA 0.6 0.4 0.2 0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 3. DC Current Gain vs. Collector Current Figure 4. Saturation Region 100 100 VCE = 2 V TA = −55°C TA = 25°C 0.6 0.5 0.4 2.0 C, CAPACITANCE (pF) 10 0.1 VBE(ON), BASE−EMITTER ON VOLTAGE (V) 1 0.9 Figure 1. Collector−Emitter Saturation Voltage vs. Collector Current 1000 hFE, DC CURRENT GAIN VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) TA = 25°C 0.1 IC/IB = 10 1.1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE, COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 TA = 150°C Cibo 10 Cobo 0.3 0.2 0.1 1.0 10 100 1000 1 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 5. Base−Emitter Turn−ON Voltage vs. Collector Current Figure 6. Capacitance http://onsemi.com 3 100 2SA1774G, S2SA1774G TYPICAL ELECTRICAL CHARACTERISTICS 1000 VCE = −2 V TA = 25°C IC, COLLECTOR CURRENT (mA) ftau, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 1000 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 100 ms 100 Thermal Limit 1 ms 10 ms 10 1 1.0 Figure 7. Current Gain Bandwidth Product vs. Collector Current Single Pulse Test at TA = 25°C 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 8. Safe Operating Area http://onsemi.com 4 100 2SA1774G, S2SA1774G PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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