Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SA1020
PNP SILICON TRANSISTOR
SILICON PNP EPITAXIAL
TRANSISTOR

DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and power
switching applications.

FEATURES
*Low collector saturation voltage:
VCE(SAT)=-0.5V(MAX) (IC= -1A)
*High speed switching time: tSTG=1.0μs(TYP)
*Complement to UTC 2SC2655

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SA1020G-x-AE3-R
2SA1020G-x-AB3-R
2SA1020L-x-T9N-B
2SA1020G-x-T9N-B
2SA1020L-x-T9N-K
2SA1020G-x-T9N-K
Note: Pin Assignment: B: Base
C: Collector
E: Emitter

Package
SOT-23
SOT-89
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
B
C
B
C
E
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
MARKING
SOT-89
TO-92NL
1
SOT-23
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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2SA1020

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
RATINGS
UNIT
-50
V
-50
V
-5
V
-2
A
SOT-23
300
mW
Collector Power Dissipation
SOT-89
PC
500
mW
TO-92NL
900
mW
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCBO
VCEO
VEBO
Ic
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector to Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
BVCEO
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
fT
COB
TEST CONDITIONS
IC=-10mA, IB=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-1.5A
IC=-1A, IB=-0.05A
IC=-1A, IB=-0.05A
VCE=-2V, Ic=-0.5A
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX
-50
-1.0
-1.0
70
240
40
-0.5
-1.2
100
40
UNIT
V
μA
μA
V
V
MHz
pF
Turn-on Time
tON
0.1
μs
Switching Time Storage Time
tSTG
1.0
μs
tF
0.1
μs
Fall Time

CLASSIFICATION OF hFE1
RANK
RANGE
O
70 - 140
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Y
120 - 240
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2SA1020

PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA1020

PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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