Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SB1132
PNP SILICON TRANSISTOR
MEDIUM POWER TRANSISTOR

DESCRIPTION
The UTC 2SB1132 is a epitaxial planar type PNP silicon
transistor.

FEATURES
* Low VCE(SAT).
VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA)

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SB1132G-x-AB3-R
2SB1132L-x-TN3-R
2SB1132G-x-TN3-R

Package
SOT-89
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
MARKING
SOT-89
2SB1132G
TO-252
Date Code
1
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 5
QW-R208-016.E
2SB1132

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Single pulse, PW=100ms)
RATINGS
UNIT
-40
V
-32
V
-5
V
DC
-1
A
IC
PULSE
-2
A
SOT-89
0.5
W
Collector Power Dissipation
PC
TO-252
1
W
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Note: Measured using pulse current.

SYMBOL
VCBO
VCEO
VEBO
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
hFE
fT
COB
TEST CONDITIONS
IC = -50μA
IC = -1mA
IE= -50μA
VCB= -20V
VEB= -4V
IC = -500mA,IB= -50mA (Note)
VCE= -3V,IC = -0.1A (Note)
VCE= -5V, IE= 50mA, f=30MHz
VCB= -10V, IE=0A, f=1MHz
MIN
-40
-32
-5
TYP
-0.2
82
150
20
MAX
-0.5
-0.5
-0.5
390
30
UNIT
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Q
120-270
R
180-390
2 of 5
QW-R208-016.E
2SB1132
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
-500
-500
-200
-100
Collector Current, Ic(mA)
Collector Current, Ic(mA)
VCE =-6V
TA=100
-50
TA=25
-20
TA= -55
-10
-5
Grounded Emitter Output
Characteristics
-4.0 -2.5
-3.0
-3.5
-400
-1
0
DC Current Gain vs. Collector Current (
-1.5
-5.0
-300
-1.0
-200
-0.5
-100
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
Base to Emitter Voltage, VBE(V)
-2.0
-4.5
-2
TA=25
DC Current Gain vs.Collector Current (
)
)
VCE= -3V
1000
500
VCE= -3V
200
VCE= -1V
DC Current Gain, hFE
1000
DC Current Gain, hFE
IB =0mA
-0.4
-0.8
-1.2
-1.6
-2.0
Collector to Emitter Voltage, VCE(V)
TA=25
500
TA=100
200
100
100
50
50
TA=25
TA= -55
-1
-2
-1
-5 -10 -20 -50-100 -200 -500-1000
Collector Current, Ic(mA)
Collector-emitter Saturation Voltage vs.
Collector Current
TA=25
-0.5 IC/IB=10
-0.2
-0.1
-0.05
-0.02
-0.01
-1 -2
-5 -10 -20 -50-100-200-500-1000-2000
Collector Current, Ic(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
-1.0
Collector to Emitter Voltage, VCE(V)
-1
Collector Saturation Voltage, VCE(SAT) ( V)

PNP SILICON TRANSISTOR
-2
-5 -10 -20 -50-100 -200 -500-1000
Collector Current :Ic(mA)
Collector Emitter Saturation Voltage vs.
Base Current
TA=25
-0.8
-0.6
IC = -500mA
-0.4
-0.2
IC = -300mA
0
-1
-2
-5 -10
-20
Base Current, IB(mA)
-50 -100
3 of 5
QW-R208-016.E
2SB1132
TYPICAL CHARACTERISTICS(Cont.)
TA=25°C
VCE = -5V
200
100
50
20
-1
Collector Output Capacitance, COB (pF)
Transition Frequency, fT(MHz)
Gain Bandwidth Product
vs. Emitter Current
-2
-5 -10
-20
-50 -100
Emitter Current, IB(mA)
Collector Output Capacitance
vs.Collector-Base Voltage
100
TA=25°C
f=1MHz
IE=0A
50
20
10
-2
-5 -10
-0.5 -1
Collector to Base Voltage, VCB(V)
s
0m
=1
PW
-1
-0.2
*
s*
m
00
=1
PW
DC
-0.5
-0.1
-0.05
TA=25°C
-0.02 *Single pulse
-0.01
0 -0.2 -0.5 -1 -2
-5 -10 -20
-50
Collector to Emitter Voltage, VCE(V)
Transient Thermal Resistance (°C/W)
1000
-2
-20
Transient Thermal Resistance
Safe Operation Area
-5
Collector Current, Ic (A)

PNP SILICON TRANSISTOR
TA=25°C
100
10
1
0.1
0.001 0.01
0.1
1
10
Time, t(s)
100
1000
Power Derating
1.6
1.4
1.2
TO-252
1
0.8
SOT-89
0.6
0.4
0.2
0.0
0
25 50 75 100 125 150 175
Ambient Temperature, TA ( )
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R208-016.E
2SB1132
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R208-016.E