UNISONIC TECHNOLOGIES CO., LTD. SB2202 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES *High current output up to 3A *Low saturation voltage ORDERING INFORMATION Ordering Number Lead Free Halogen Free SB2202L-x-TM3-R SB2202G-x-TM3-R SB2202L-x-TN3-T SB2202G-x-TN3-T SB2202L-x-TN3-R SB2202G-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tube Tape Reel MARKING INFORMATION PACKAGE MARKING TO-220F TO-251 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD. 1of 4 QW-R209-020.B SB2202 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25C , unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Dissipation DC PULSE TA=25C TC=25C Junction Temperature Storage Temperature RATINGS -40 -30 -5 -0.6 -3 -7 1 10 +150 -40 ~ +150 PC TJ TSTG UNIT V V V A A W C C ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified.) PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL VCE(sat) VBE(sat) ICBO IEBO hFE1 DC Current Gain(Note 1) hFE2 Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW<300μs, Duty Cycle<2% SYMBOL VCBO VCEO VEBO IB IC ICM TEST CONDITIONS IC =-2A, IB= -0.2A IC = -2A, IB= -0.2A VCB= -30V, IE=0 VEB= -3V, IC =0 VCE= -2V, IC = -20mA VCE= -2V, IC = -1A VCE= -5V, IC = -0.1A VCB= -10V, IE=0, f=1MHz MIN TYP -0.3 -1.0 30 100 200 MAX -0.5 -2.0 1 1 UNIT V V mA mA 400 80 45 MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 100 ~ 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 160 ~ 320 E 200 ~ 400 2 of 4 QW-R209-020.B SB2202 TYPICAL CHARACTERISTICS Derating curve of safe operating areas 1.6 -IB = 9mA -IB=8mA -IB=7mA -IB=6mA -IB=5mA 1.2 0.8 -IB= 4mA 0.4 4 8 12 16 lim i 50 te d d 0 S/ b ite -IB=1mA 0 100 lim -IB=3mA -IB=2mA -IC Derating (%) 150 n t io ipa ss Di -Collector Current, IC(A) Static characteristics 0 20 - 40 -Collector -Emitter Voltage, (V) 0 40 80 10 3 Output Capacitance (pF) 8 4 40 80 120 150 Case Temperature, TC (°C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw I E=0 f=1MHz 10 2 101 100 0 0 150 Collector output capacitance 12 -40 120 Case Temperature,TC (°C) Power derating Power Dissipation (W) PNP EPITAXIAL SILICON TRANSISTOR 0 10 1 10- 2 10- -3 10 -Collector-Base Voltage(V) 3 of 4 QW-R209-020.B SB2202 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS (cont.) DC current gain Saturation Voltage 103 4 10 VCE=-2V VBE(SAT) 3 10 102 2 10 101 VBE(SAT) 1 10 100 0 10 0 1 10 2 10 3 10 10 4 -Collector current, IC (mA) 10 0 10 1 10 2 10 3 4 10 10 -Collector Current, IC (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R209-020.B