Datasheet

UNISONIC TECHNOLOGIES CO., LTD.
SB2202
PNP EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR

DESCRIPTION
The UTC SB2202 is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and
voltage regulator.

FEATURES
*High current output up to 3A
*Low saturation voltage

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
SB2202L-x-TM3-R
SB2202G-x-TM3-R
SB2202L-x-TN3-T
SB2202G-x-TN3-T
SB2202L-x-TN3-R
SB2202G-x-TN3-R
Note: Pin Assignment: B: Base C: Collector
E: Emitter

Package
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tape Reel
MARKING INFORMATION
PACKAGE
MARKING
TO-220F
TO-251
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD.
1of 4
QW-R209-020.B
SB2202

PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C , unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Collector Dissipation
DC
PULSE
TA=25C
TC=25C
Junction Temperature
Storage Temperature

RATINGS
-40
-30
-5
-0.6
-3
-7
1
10
+150
-40 ~ +150
PC
TJ
TSTG
UNIT
V
V
V
A
A
W
C
C
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified.)
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
VCE(sat)
VBE(sat)
ICBO
IEBO
hFE1
DC Current Gain(Note 1)
hFE2
Current Gain Bandwidth Product
fT
Output Capacitance
Cob
Note 1: Pulse test: PW<300μs, Duty Cycle<2%

SYMBOL
VCBO
VCEO
VEBO
IB
IC
ICM
TEST CONDITIONS
IC =-2A, IB= -0.2A
IC = -2A, IB= -0.2A
VCB= -30V, IE=0
VEB= -3V, IC =0
VCE= -2V, IC = -20mA
VCE= -2V, IC = -1A
VCE= -5V, IC = -0.1A
VCB= -10V, IE=0, f=1MHz
MIN
TYP
-0.3
-1.0
30
100
200
MAX
-0.5
-2.0
1
1
UNIT
V
V
mA
mA
400
80
45
MHz
pF
CLASSIFICATION OF hFE2
RANK
RANGE
Q
100 ~ 200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
P
160 ~ 320
E
200 ~ 400
2 of 4
QW-R209-020.B
SB2202
TYPICAL CHARACTERISTICS
Derating curve of safe operating areas
1.6
-IB = 9mA
-IB=8mA
-IB=7mA
-IB=6mA
-IB=5mA
1.2
0.8
-IB= 4mA
0.4
4
8
12
16
lim
i
50
te d
d
0
S/
b
ite
-IB=1mA
0
100
lim
-IB=3mA
-IB=2mA
-IC Derating (%)
150
n
t io
ipa
ss
Di
-Collector Current, IC(A)
Static characteristics
0
20
- 40
-Collector -Emitter Voltage, (V)
0
40
80
10 3
Output Capacitance (pF)
8
4
40
80
120
150
Case Temperature, TC (°C)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
I E=0
f=1MHz
10 2
101
100
0
0
150
Collector output capacitance
12
-40
120
Case Temperature,TC (°C)
Power derating
Power Dissipation (W)

PNP EPITAXIAL SILICON TRANSISTOR
0
10
1
10-
2
10-
-3
10
-Collector-Base Voltage(V)
3 of 4
QW-R209-020.B
SB2202

PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (cont.)
DC current gain
Saturation Voltage
103
4
10
VCE=-2V
VBE(SAT)
3
10
102
2
10
101
VBE(SAT)
1
10
100
0
10
0
1
10
2
10
3
10
10
4
-Collector current, IC (mA)
10
0
10
1
10
2
10
3
4
10
10
-Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R209-020.B