Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BC856AS
Preliminary
DUAL TRANSISTOR
DUAL PNP SURFACE MOUNT
SMALL SIGNAL TRANSISTOR

DESCRIPTION
The UTC BC856AS is a dual PNP surface mount small signal
transistor, it uses UTC’s advanced technology to provide customers
with high DC current gain, etc.
The UTC BC856AS is suitable for switching and AF amplifier
applications.

FEATURES
* High DC current gain

EQUIVALENT CIRCUIT

ORDERING INFORMATION
Ordering Number
Package
BC856ASG-AL6-R
Note: Pin Assignment: E: Emitter
SOT-363
B: Base C: Collector
BC856ASG-AL6-R

1
E1
Pin Assignment
2
3
4
5
B1
C2
E2
B2
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AL6: SOT-363
(3)Green Package
(3) G: Halogen Free and Lead Free
6
C1
Packing
Tape Reel
MARKING
6
5
4
9ASG
1
2
3
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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BC856AS

Preliminary
DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-65
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current
IC
-100
mA
Peak Collector Current
ICM
-200
mA
Peak Emitter Current
IEM
-200
mA
Power Dissipation
PD
200
mW
Operating Temperature Range
TJ
-65~+150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient
θJA
Note: Device mounted on FR-4 PCB minimum land pad.

RATINGS
625
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS
DC Current Gain
SYMBOL
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
Base-Emitter Voltage
VBE(ON)
V(BR)CBO
V(BR)CEO
V(BR)EBO
TEST CONDITIONS
MIN
TYP MAX UNIT
IC=10μA, IB=0
IC=10mA, IB=0
IE=1μA, IC=0
-80
-65
-5
VCE=-5.0V, IC=-2.0mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5.0mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5.0mA
VCE=-5.0V, IC=-2.0mA
VCE=-5.0V, IC=-10mA
125
180 250
-75 -300
-250 -650
-700
-850
-600 -650 -750
-820
mV
mV
mV
mV
mV
mV
VCE=-80V
VCB=-30V
Collector-Cutoff Current
ICBO
VCB=-30V, TA=150°C
VCE=-5.0V, IC=-10mA,
Gain Bandwidth Product
fT
f=100MHz
Collector-Base Capacitance
CCB
VCB=-10V, f=1.0MHz
Note: Short duration pulse test used to minimize self-heating effect.
-15
-15
-4.0
nA
nA
µA
hFE
V
V
V
SMALL SIGNAL CHARACTERISTICS
ICES
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
100
MHz
3
pF
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BC856AS
Preliminary
DUAL TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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