UNISONIC TECHNOLOGIES CO., LTD BC856AS Preliminary DUAL TRANSISTOR DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR DESCRIPTION The UTC BC856AS is a dual PNP surface mount small signal transistor, it uses UTC’s advanced technology to provide customers with high DC current gain, etc. The UTC BC856AS is suitable for switching and AF amplifier applications. FEATURES * High DC current gain EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Package BC856ASG-AL6-R Note: Pin Assignment: E: Emitter SOT-363 B: Base C: Collector BC856ASG-AL6-R 1 E1 Pin Assignment 2 3 4 5 B1 C2 E2 B2 (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AL6: SOT-363 (3)Green Package (3) G: Halogen Free and Lead Free 6 C1 Packing Tape Reel MARKING 6 5 4 9ASG 1 2 3 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-108.b BC856AS Preliminary DUAL TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -65 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA Power Dissipation PD 200 mW Operating Temperature Range TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL Junction to Ambient θJA Note: Device mounted on FR-4 PCB minimum land pad. RATINGS 625 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage ON CHARACTERISTICS DC Current Gain SYMBOL Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Base-Emitter Voltage VBE(ON) V(BR)CBO V(BR)CEO V(BR)EBO TEST CONDITIONS MIN TYP MAX UNIT IC=10μA, IB=0 IC=10mA, IB=0 IE=1μA, IC=0 -80 -65 -5 VCE=-5.0V, IC=-2.0mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5.0mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5.0mA VCE=-5.0V, IC=-2.0mA VCE=-5.0V, IC=-10mA 125 180 250 -75 -300 -250 -650 -700 -850 -600 -650 -750 -820 mV mV mV mV mV mV VCE=-80V VCB=-30V Collector-Cutoff Current ICBO VCB=-30V, TA=150°C VCE=-5.0V, IC=-10mA, Gain Bandwidth Product fT f=100MHz Collector-Base Capacitance CCB VCB=-10V, f=1.0MHz Note: Short duration pulse test used to minimize self-heating effect. -15 -15 -4.0 nA nA µA hFE V V V SMALL SIGNAL CHARACTERISTICS ICES UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 100 MHz 3 pF 2 of 3 QW-R206-108.b BC856AS Preliminary DUAL TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-108.b