GSOT03 to GSOT36 Vishay Semiconductors Single-Line ESD-Protection in SOT-23 FEATURES • Single-line ESD-protection device 3 • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge 1 2 20421 20512 • AEC-Q101 qualified • e3 - Sn 1 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC YYY XX MARKING (example only) XX • Space saving SOT-23 package 20357 YYY = type code (see table below) XX = date code ORDERING INFORMATION DEVICE NAME GSOT03 GSOT04 GSOT05 GSOT08 GSOT12 GSOT15 GSOT24 GSOT36 ENVIRONMENTAL STATUS ORDERING CODE Standard GSOT03-GS08 Green GSOT03-V-G-08 Standard GSOT04-GS08 Green GSOT04-V-G-08 Standard GSOT05-GS08 Green GSOT05-V-G-08 Standard GSOT08-GS08 Green GSOT08-V-G-08 Standard GSOT12-GS08 Green GSOT12-V-G-08 Standard GSOT15-GS08 Green GSOT15-V-G-08 Standard GSOT24-GS08 Green GSOT24-V-G-08 Standard GSOT36-GS08 Green GSOT36-V-G-08 TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY 3000 15 000 3000 15 000 3000 15 000 3000 15 000 3000 15 000 3000 15 000 3000 15 000 3000 15 000 ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 85807 Rev. 2.0, 22-Jul-10 For technical questions, contact: [email protected] www.vishay.com 1 GSOT03 to GSOT36 Vishay Semiconductors Single-Line ESD-Protection in SOT-23 PACKAGE DATA DEVICE NAME PACKAGE NAME GSOT03 SOT-23 GSOT04 SOT-23 GSOT05 SOT-23 GSOT08 SOT-23 GSOT12 SOT-23 GSOT15 SOT-23 GSOT24 SOT-23 GSOT36 SOT-23 TYPE CODE ENVIRONMENTAL STATUS WEIGHT 03 Standard 8.8 mg 03G Green 8.1 mg 04 Standard 8.8 mg 04G Green 8.1 mg 05 Standard 8.8 mg 05G Green 8.1 mg 08 Standard 8.8 mg 08G Green 8.1 mg 12 Standard 8.8 mg 12G Green 8.1 mg 15 Standard 8.8 mg 15G Green 8.1 mg 24 Standard 8.8 mg 24G Green 8.1 mg 36 Standard 8.8 mg 36G Green 8.1 mg MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS GSOT03 PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 30 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 369 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 30 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 429 W Operating temperature Junction temperature Storage temperature ABSOLUTE MAXIMUM RATINGS GSOT04 PARAMETER ESD immunity Operating temperature Storage temperature www.vishay.com 2 Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C VESD For technical questions, contact: [email protected] Document Number: 85807 Rev. 2.0, 22-Jul-10 GSOT03 to GSOT36 Single-Line ESD-Protection in SOT-23 Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS GSOT05 PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 30 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 480 W ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 18 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 345 W ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 12 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 312 W ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 8 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 230 W ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 5 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 235 W ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C ESD immunity Operating temperature Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD ABSOLUTE MAXIMUM RATINGS GSOT08 PARAMETER ESD immunity Operating temperature Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD ABSOLUTE MAXIMUM RATINGS GSOT12 PARAMETER ESD immunity Operating temperature Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD ABSOLUTE MAXIMUM RATINGS GSOT15 PARAMETER ESD immunity Operating temperature Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD ABSOLUTE MAXIMUM RATINGS GSOT24 PARAMETER ESD immunity Operating temperature Storage temperature Document Number: 85807 Rev. 2.0, 22-Jul-10 Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD For technical questions, contact: [email protected] www.vishay.com 3 GSOT03 to GSOT36 Vishay Semiconductors Single-Line ESD-Protection in SOT-23 ABSOLUTE MAXIMUM RATINGS GSOT36 PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 3.5 A Peak pulse power Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 248 W Contact discharge acc. IEC 61000-4-2; 10 pulses ESD immunity Air discharge acc. IEC 61000-4-2; 10 pulses Operating temperature Junction temperature Storage temperature ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C VESD BiAs-MODE (1-line bidirectional asymmetrical protection mode) With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1 and pin 3 offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and asymmetrical (BiAs). L1 3 1 BiAs 2 Ground 20422 ELECTRICAL CHARACTERISTICS GSOT03 PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IR = 100 μA VRWM 3.3 - - V Reverse current at VR = 3.3 V IR - - 100 μA Reverse breakdown voltage at IR = 1 mA VBR 4 4.6 - V - 5.7 7.5 V - 10 12.3 V - 1 1.2 V Protection paths Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 1.6 V; f = 1 MHz VC VF CD - 4.5 - V - 420 600 pF - 260 - pF Note • BiAs mode (between pin 3 and pin 1) www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 85807 Rev. 2.0, 22-Jul-10 GSOT03 to GSOT36 Single-Line ESD-Protection in SOT-23 Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT04 PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines at IR = 20 μA VRWM 4 - - V Reverse current at VR = 4 V IR - - 20 μA Reverse breakdown voltage at IR = 1 mA VBR 5 6.1 - V - 7.5 9 V - 11.2 14.3 V - 1 1.2 V Protection paths Reverse working voltage at IPP = 1 A Reverse clamping voltage at IPP = IPPM = 30 A at IPP = 1 A Forward clamping voltage at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz Capacitance at VR = 2 V; f = 1 MHz VC VF CD - 4.5 - V - 310 450 pF - 200 - pF Note • BiAs mode (between pin 3 and pin 1) ELECTRICAL CHARACTERISTICS GSOT05 PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines at IR = 10 μA VRWM 5 - - V Reverse current at VR = 5 V IR - - 10 μA Reverse breakdown voltage at IR = 1 mA VBR 6 6.8 - V - 7 8.7 V - 12 16 V - 1 1.2 V Protection paths Reverse working voltage at IPP = 1 A Reverse clamping voltage at IPP = IPPM = 30 A at IPP = 1 A Forward clamping voltage at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz Capacitance at VR = 2.5 V; f = 1 MHz VC VF CD - 4.5 - V - 260 350 pF - 150 - pF Note • BiAs mode (between pin 3 and pin 1) ELECTRICAL CHARACTERISTICS GSOT08 PARAMETER Protection paths TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IR = 5 μA VRWM 8 - - V Reverse current at VR = 8 V IR - - 5 μA Reverse breakdown voltage at IR = 1 mA VBR 9 10 - V - 10.7 13 V - 15.2 19.2 V - 1 1.2 V - 3 - V - 160 250 pF - 80 - pF Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 18 A at IPP = 1 A at IPP = IPPM = 18 A at VR = 0 V; f = 1 MHz at VR = 4 V; f = 1 MHz VC VF CD Note • BiAs mode (between pin 3 and pin 1) Document Number: 85807 Rev. 2.0, 22-Jul-10 For technical questions, contact: [email protected] www.vishay.com 5 GSOT03 to GSOT36 Vishay Semiconductors Single-Line ESD-Protection in SOT-23 ELECTRICAL CHARACTERISTICS GSOT12 PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IR = 1 μA VRWM 12 - - V Reverse current at VR = 12 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 13.5 15 - V Protection paths at IPP = 1 A Reverse clamping voltage at IPP = IPPM = 12 A at IPP = 1 A Forward clamping voltage at IPP = IPPM = 12 A at VR = 0 V; f = 1 MHz Capacitance at VR = 6 V; f = 1 MHz VC VF CD - 15.4 18.7 V - 21.2 26 V - 1 1.2 V - 2.2 - V - 115 150 pF - 50 - pF Note • BiAs mode (between pin 3 and pin 1) ELECTRICAL CHARACTERISTICS GSOT15 PARAMETER Protection paths TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IR = 1 μA VRWM 15 - - V Reverse current at VR = 15 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 16.5 18 - V - 19.4 23.5 V - 24.8 28.8 V - 1 1.2 V - 1.8 - V - 90 120 pF - 35 - pF at IPP = 1 A Reverse clamping voltage at IPP = IPPM = 8 A at IPP = 1 A Forward clamping voltage at IPP = IPPM = 8 A at VR = 0 V; f = 1 MHz Capacitance at VR = 7.5 V; f = 1 MHz VC VF CD Note • BiAs mode (between pin 3 and pin 1) ELECTRICAL CHARACTERISTICS GSOT24 PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected at IR = 1 μA at VR = 24 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 5 A at IPP = 1 A at IPP = IPPM = 5 A at VR = 0 V; f = 1 MHz at VR = 12 V; f = 1 MHz Nchannel VRWM IR VBR 24 27 - 30 34 41 1 1.4 65 20 1 1 41 47 1.2 80 - lines V μA V V V V V pF pF VC VF CD Note • BiAs mode (between pin 3 and pin 1) www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 85807 Rev. 2.0, 22-Jul-10 GSOT03 to GSOT36 Single-Line ESD-Protection in SOT-23 Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT36 PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected at IR = 1 μA at VR = 36 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 3.5 A at IPP = 1 A at IPP = IPPM = 3.5 A at VR = 0 V; f = 1 MHz at VR = 18 V; f = 1 MHz Nchannel VRWM IR VBR 36 39 - 43 49 59 1 1.3 52 12 1 1 60 71 1.2 65 - lines V μA V V V V V pF pF VC VF CD Note • BiAs mode (between pin 3 and pin 1) PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0° t 0.5 (0.020) 0.45 (0.018) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) 0.7 (0.028) 0.95 (0.037) 0.9 (0.035) 1.43 (0.056) 1 (0.039) 0.9 (0.035) Foot print recommendation: 2 (0.079) 1 (0.039) 0.9 (0.035) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 0.95 (0.037) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Document Number: 85807 Rev. 2.0, 22-Jul-10 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1