20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet flow IPM 1B 600 V / 10 A Features flow IPM 1B ● CIP-topology (converter + inverter + PFC) ● Optimized for PFC frequencies of 20kHz..100kHz and inverter frequencies of 4kHz..20kHz ● Integrated PFC controller circuit with programmable DC output voltage and PWM frequency ● Inverter gate drive inclusive bootstrap for high side power supply ● Over current and short circuit protection ● Integrated DC-capacitor ● Sense output of DC-current ● Temperature sensor ● Conclusive power flow, all power connections on Solder pins one side, no input output X-ing ● Optional pre-applied thermal interface material Press-fit Schematic Target Applications ● ● ● ● Fans and Pumps AirCon Electrical Tools Low power industrial drive Types ● 20-1B06IPB010RC-P955A40 ● 20-PB06IPB010RC-P955A40Y Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1600 V 16 21 A 130 A 80 A2s 19 29 W Input Rectifier Diode Repetitive peak reverse voltage V RRM DC forward current I FAV Surge forward current I FSM T j = T jmax T h = 80 °C T c = 80 °C t p = 10 ms 50 Hz half sine wave T j = 150 °C T j = T jmax T h = 80 °C T c = 80 °C I 2t-value I 2t Power dissipation P tot Maximum Junction Temperature T jmax 150 °C V CE 650 V 19 20 A t p limited by T jmax 90 A V CE ≤ 650 V, T j ≤ T op max 90 A 37 56 W PFC IGBT Collector-emitter break down voltage DC collector current Repetitive peak collector current IC I CRM Turn off safe operating area T j = T jmax T j = T jmax T h = 80 °C T c = 80 °C T h = 80 °C T c = 80 °C Power dissipation P tot Gate-emitter peak voltage V GE ±20 V T jmax 175 °C Maximum Junction Temperature copyright Vincotech 1 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 650 V 6 8 A 12 A 12 19 W PFC Inverse Diode Peak Repetitive Reverse Voltage DC forward current V RRM IF T j = T jmax T h = 80 °C T c = 80 °C Repetitive peak forward current I FRM t p limited by T jmax Power dissipation P tot T j = T jmax Maximum Junction Temperature T jmax 175 °C V RRM 650 V 13 16 A 180 A 130 A 60 A 25 37 W T h = 80 °C T c = 80 °C PFC Diode Peak Repetitive Reverse Voltage DC forward current Surge forward current 2 I t-value IF I FSM I 2t T j = T jmax T h = 80 °C T c = 80 °C t p = 8,3 ms 60 Hz half sine wave Repetitive peak forward current I FRM t p limited by T jmax Power dissipation P tot T j = T jmax Maximum Junction Temperature T jmax 175 °C V CE 600 V 9 12 A t p limited by T jmax 30 A V CE ≤ 600 V, T j ≤ 150 °C 20 A 20 31 W ±20 V 5 400 µs V 175 °C 600 V T h = 80 °C T c = 80 °C Inverter Transistor Collector-emitter break down voltage DC collector current Repetitive peak collector current IC I CRM Turn off safe operating area Power dissipation P tot Gate-emitter peak voltage V GE Short circuit ratings t SC V CC Maximum Junction Temperature T j = T jmax T j = T jmax T h = 80 °C T c = 80 °C T h = 80 °C T c = 80 °C T j ≤ 150 °C V GE = 15 V T jmax Inverter Diode Peak Repetitive Reverse Voltage V RRM IF T j = T jmax Power dissipation P tot T j = T jmax Maximum Junction Temperature T jmax DC forward current copyright Vincotech T h = 80 °C T c = 80 °C T h = 80 °C T c = 80 °C 8 11 17 25 175 2 A W °C 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit PFC Shunt DC forward current Power dissipation IF T c = 25 °C 10 A P tot T c = 25 °C 9 W 26 V PFC Controller* VCC supply voltage V CC V CC common with gate driver IC VSENSE voltage V VSENSE 5,3 V Vsense Current I VSENSE ±1 mA FREQ pin voltage V FREQ 5,3 V Maximum Junction Temperature T jmax 125 °C IF 8 A P tot 3,2 W 500 V * for more information see infineon's datasheet ICE3PCS02 DC - Shunt DC forward current Power dissipation DC link Capacitor Maximum DC voltage T c = 25 °C V MAX Gate Driver* Supply voltage U CC 20 V Input voltage (LIN, HIN, EN) U IN 10 V U OUT VCC+0,5 V Output voltage (FAULT) * for more information see infineon's datasheet 6ED003L02-F2 Thermal Properties Storage temperature T stg -40…+125 °C Operation temperature under switching condition T op -40…+(Tjmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Isolation Properties Insulation voltage Comparative tracking index copyright Vincotech V is t=2s CTI DC voltage >200 3 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Characteristic Values Parameter Conditions Symbol Value V r [V] I C [A] or V GE [V] or or I [A] or V CE [V] or F V GS [V] I D [A] V DS [V] T j [°C] Min Typ Unit Max Input Rectifier Diode Forward voltage VF 7 Threshold voltage (for power loss calc. only) V to 7 Slope resistance (for power loss calc. only) rt Reverse current Ir Thermal resistance chip to heatsink 7 Phase-Change Material λ = 3,4W/mK V GE(th) V CE = V GE 1,04 0,97 0,87 0,74 25 33 25 1200 R th(j-s) 25 125 25 125 25 125 V V mΩ 0,01 mA K/W 3,66 PFC IGBT Gate emitter threshold voltage Collector-emitter saturation voltage V CEsat Collector-emitter cut-off I CES Turn-on delay time t d(on) Rise time Turn-off delay time 15 0 30 tr 10 tf E on Turn-off energy loss per pulse E off Input capacitance C ies Output capacitance C oss Reverse transfer capacitance C rss R th(j-s) 3,3 4 4,7 2,12 2,44 2,22 25 t d(off) Turn-on energy loss per pulse Thermal resistance chip to heatsink 25 25 125 650 U CC = 15 V 400 Fall time 0,0003 0,04 25 125 25 125 25 125 25 125 25 125 25 125 27 28 5 7 122 154 2 2 0,1516 0,2417 0,0317 0,0583 V V mA ns mWs 2100 f = 1 MHz 0 25 25 pF 45 7,7 Phase-Change Material λ = 3,4W/mK 2,56 K/W PFC Inverse Diode Diode forward voltage Thermal resistance chip to heatsink VF R th(j-s) 10 25 125 Phase-Change Material λ = 3,4W/mK 1,23 1,12 0,97 1,87 7,75 V K/W PFC Diode Forward voltage VF Reverse leakage current I rm Peak recovery current I RRM Reverse recovery time t rr Reverse recovery charge Q rr Reverse recovered energy 400 U CC = 15 V 400 E rec Peak rate of fall of recovery current ( di rf/dt )max Thermal resistance chip to heatsink R th(j-s) Phase-Change Material λ = 3,4W/mK 15 25 125 10 25 10 25 125 25 125 25 125 25 125 25 125 1,92 1,97 2,22 1,6 15 19 22 36 0,2008 0,4358 0,0150 0,0504 2033 891 V µA A ns µC mWs A/µs 3,87 K/W 50 mΩ PFC Shunt R1 value copyright Vincotech R 4 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Characteristic Values Parameter Conditions Symbol Value V r [V] I C [A] or V GE [V] or or I [A] or V CE [V] or F V GS [V] I D [A] V DS [V] T j [°C] Min Typ Unit Max Inverter Transistor Gate emitter threshold voltage V GE(th) Collector-emitter saturation voltage* V CEsat V CE = V GE 15 0,00017 25 4,4 5 5,6 10 25 125 0,8 2,20 2,32 2,62 V V Collector-emitter cut-off current incl. Diode I CES 0 600 25 0,1 mA Gate-emitter leakage current I GES 20 0 25 120 nA Integrated Gate resistor R gint Turn-on delay time ** Rise time Turn-off delay time ** Fall time t d(on) tr t d(off) U CC = 15 V 400 U IN = 5 V tf Turn-on energy loss per pulse E on Turn-off energy loss per pulse E off Input capacitance C ies Output capacitance C oss Reverse transfer capacitance C rss Gate charge QG Thermal resistance chip to heatsink none R th(j-s) 6 25 125 25 125 25 125 25 125 25 125 25 125 Ω 582 631 20 25 837 950 16 22 0,1950 0,3241 0,1611 0,2042 ns mWs 655 f = 1 MHz 0 25 15 480 25 37 pF 22 10 25 Phase-Change Material λ = 3,4W/mK 64 nC 4,72 K/W * chip data ** including gate driver Inverter Diode Diode forward voltage Peak reverse recovery current VF I RRM Reverse recovery time t rr Reverse recovered charge Q rr Peak rate of fall of recovery current Reverse recovered energy Thermal resistance chip to heatsink 10 U CC = 15 V 400 U IN = 5 V ( di rf/dt )max E rec R th(j-s) 6 25 125 25 125 25 125 25 125 25 125 25 125 Phase-Change Material λ = 3,4W/mK 0,7 2,23 2,18 6 6 179 276 0,3566 0,6738 181 46 0,0867 0,1610 2,8 V A ns µC A/µs mWs 5,72 K/W 25 mΩ 100 nF DC - Shunt R2 value 25 R DC link Capacitor C Value copyright Vincotech C 5 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Characteristic Values Parameter Conditions Symbol V r [V] I C [A] or V GE [V] or or I [A] or V CE [V] or F V GS [V] I D [A] V DS [V] Value T j [°C] Min Unit Typ Max Gate Driver Supply voltage U CC Quiescent Vcc supply current I QCC Input voltage (LIN, HIN, EN) U IN 0 Logic "0" input voltage (LIN, HIN) UIH Logic "1" input voltage (LIN, HIN) U IL 13 15 17,5 V 1,3 2 mA 1,7 2,1 2,4 0,7 0,9 1,1 U EN, TH+ 1,9 2,1 2,3 U EN, TH- 1,1 1,3 1,5 9 10,3 12 380 445 510 70 100 U LIN = 0 V; U HIN=3,3 V U CC = 15 V 5 V Positive going threshold voltage (EN) Negative going threshold voltage (EN) Input clamp voltage (LIN, HIN, EN) ITRIP positive going threshold U IN, CLAMP I IN = 4 mA U TR, TH+ Input bias current LIN high I LIN+ U LIN = 3,3 V Input bias current LIN low I LIN- U LIN = 0 V Input bias current HIN high I HIN+ U HIN = 3,3 V Input bias current HIN low I HIN- U HIN = 0 V Input bias current EN high I EN+- U HIN = 3,3 V Output voltage (FAULT) U FLT Low on resistor of pull down trans. (FAULT) R ON, FLT Pulse width for ON or OFF t IN Turn-on propagation delay (LIN, HIN) t ON 25 110 200 70 100 110 120 45 120 U CC 0 U FAULT = 0,5 V 45,0 100 1 t OFF FAULT reset time t RST Fixed deadtime between high and low side t DT µA V Ω µs 400 530 800 360 490 760 U LIN/HIN = 0 V or 3,3 V Turn-off propagation delay (LIN, HIN) mV ns U LIN/HIN = 0 V & 3,3 V 4 ms 150 310 ns PFC Controller VCC turn-on threshold V CCon 11,5 12,0 12,9 VCC turn-off threshold V CCUVLO 10,5 11,0 11,9 V 6,4 8,5 mA 3,5 4,7 Operating current with active GATE I CCHG C L = 1 nF Operating current during standby I CCstby PFC switching frequency F SWnom Set with an internal resistor R FREQ = 220 kΩ* DC2+ Set with an internal resistor divider** DC link voltage DC link treshold (OVP1) low to high V OVP1L2H DC link treshold (OVP1) high to low V OVP1H2L Blanking time for OVP1 t OVP1 20 339 25 350 361 100 % 12 µs V OVP1_HYS 6 8 11 DC link treshold (OVP2) low to high V OVP2_L2H 428 443 460 DC link treshold (OVP2) high to low V OVP2_H2L relative to OVP2 t OVP2 V % DC link treshold (OVP1) hysteresis Blanking time for OVP2 mA kHz 108 relative to output voltage OVP1 values varies with external resistor Feedback voltage V DClink/130 can be measured at VSENSE pin V % V 92 % 12 µs *switching frequency is setable by an external resistor between pins 32 (see figure 1 for values) **DC link voltage is setable by an external resistor between pins 32 (see figure 2 for values) Thermistor Rated resistance R Deviation of R 100 ΔR/R Power dissipation P 100 Power dissipation constant B-value B (25/50) B-value B ( 25/100) Tol. ±3% Tol. ±3% Vincotech NTC Reference copyright Vincotech 22000 25 R 100 = 1486 Ω Ω 12 % 25 200 mW 25 2 mW/K 25 3950 K 25 3998 25 6 -12 K B 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Output Inverter Figure 1 Typical output characteristics I C = f(V CE) Output inverter IGBT Figure 2 Typical output characteristics I C = f(V CE) 35 IC (A) IC (A) 35 Output inverter IGBT 30 30 25 25 20 20 15 15 10 10 5 5 0 0 0 At tp = Tj = U CC from 1 2 3 4 V CE (V) 5 0 At tp = Tj = U CC from 250 µs 25 °C 10 V to 17 V in steps of 1 V 1 2 3 4 V CE (V) 5 250 µs 125 °C 10 V to 17 V in steps of 1 V Figure 3 Typical diode forward current as a function of forward voltage I F = f(V F) Output inverter FWD IF (A) 40 35 30 25 20 15 10 Tj = Tjmax-25°C 5 Tj = 25°C 0 0 At tp = copyright Vincotech 7 1 250 2 3 4 V F (V) 5 µs 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Output Inverter Figure 4 Typical switching energy losses as a function of collector current E = f(I C) Output inverter IGBT E (mWs) 0,6 Eon High T 0,5 0,4 Eon Low T Eoff High T 0,3 Eoff Low T 0,2 0,1 0,0 0 2 4 6 8 10 I C (A) 12 With an inductive load at Tj = °C 25/125 V CE = 400 V U CC = 15 V Figure 5 Typical reverse recovery energy loss as a function of collector current E rec = f(I C) Output inverter FWD 0,20 E (mWs) Erec Tj = Tjmax -25°C 0,15 Tj = 25°C Erec 0,10 0,05 0,00 0 2 4 6 8 10 I C (A) 12 With an inductive load at Tj = 25/125 °C V CE = 400 V U CC = 15 V copyright Vincotech 8 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Output Inverter Figure 6 Typical switching times as a function of collector current t = f(I C) Output inverter IGBT t ( µs) 10,00 tdoff 1,00 tdon 0,10 tr tf 0,01 0,00 0 2 4 6 8 I C (A) 10 With an inductive load at Tj = 125 °C V CE = 400 V U CC = 15 V Figure 7 Typical reverse recovery time as a function of collector current t rr = f(I C) Output inverter FWD t rr( µs) 0,35 Tj = Tjmax -25°C trr 0,30 0,25 trr Tj = 25°C 0,20 0,15 0,10 0,05 0,00 0 At Tj = V CE = U CC = 2 25/125 400 15 copyright Vincotech 4 6 8 10 I C (A) 12 °C V V 9 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Output Inverter Figure 8 Typical reverse recovery charge as a function of collector current Q rr = f(I C) Output inverter FWD Qrr( µC) 1,0 Tj = Tjmax -25°C Qrr 0,8 0,6 Tj = 25°C Qrr 0,4 0,2 0,0 0 At At Tj = V CE = U CC = 2 25/125 400 15 4 6 8 10 I C (A) 12 °C V V Figure 9 Typical reverse recovery current as a function of collector current I RRM = f(I C) Output inverter FWD 6 IrrM (A) IRRM Tj = Tjmax -25°C IRRM 5 Tj = 25°C 4 3 2 1 0 0 At Tj = V CE = U CC = 2 25/125 400 15 copyright Vincotech 4 6 8 10 I C (A) 12 °C V V 10 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Output Inverter Figure 10 Typical rate of fall of forward and reverse recovery current as a function of collector current dI 0/dt ,dI rec/dt = f(I C) Output inverter FWD direc / dt (A/µ s) 600 dI0/dt dIrec/dt 500 400 300 200 100 0 0 At Tj = V CE = U CC = 2 25/125 400 15 4 6 8 10 I C (A) 12 °C V V Figure 11 IGBT transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) Output inverter IGBT Figure 12 FWD transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) 101 Output inverter FWD Zth(j-s) (K/W) Z th(j-s) (K/W) 101 100 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10-2 10-5 At D = R th(j-s) = 10-4 10-3 10-2 10-1 100 t p (s) 10-2 10-5 10110 K/W IGBT thermal model values Phase change interface R (K/W) 0,14 0,66 2,74 0,76 0,42 copyright Vincotech 10-4 At D = R th(j-s) = tp/T 4,72 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10-3 10-2 10-1 100 t p (s) 10110 tp/T 5,72 K/W FWD thermal model values Phase change interface Tau (s) 2,1E+00 1,7E-01 4,0E-02 6,5E-03 1,5E-03 R (K/W) 0,11 0,37 2,69 0,84 0,98 0,73 11 Tau (s) 3,2E+00 2,6E-01 4,8E-02 1,2E-02 2,8E-03 6,0E-04 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Output Inverter Figure 13 Power dissipation as a function of heatsink temperature P tot = f(T s) Output inverter IGBT Figure 14 Collector current as a function of heatsink temperature I C = f(T s) 14 IC (A) Ptot (W) 40 Output inverter IGBT 35 12 30 10 25 8 20 6 15 4 10 2 5 0 0 0 At Tj = 50 175 100 150 T s ( o C) 0 200 At Tj = U CC = °C Figure 15 Power dissipation as a function of heatsink temperature P tot = f(T s) Output inverter FWD 50 175 15 100 T s ( o C) 200 °C V Figure 16 Forward current as a function of heatsink temperature I F = f(T s) Output inverter FWD 14 IF (A) Ptot (W) 35 150 30 12 25 10 20 8 15 6 10 4 5 2 0 0 0 At Tj = 50 175 copyright Vincotech 100 150 T s ( o C) 200 0 At Tj = °C 12 50 175 100 150 T s ( o C) 200 °C 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Output Inverter Figure 17 Safe operating area as a function of collector-emitter voltage I C = f(V CE) Output inverter IGBT IC (A) 103 1ms 100µs 10ms 100ms 102 DC 101 100 10 -1 100 101 V CE (V) 102 103 At Tj ≤ U CC = T jmax 15 V Figure 18 Reverse bias safe operating area Output inverter IGBT I C = f(V CE) IC (A) 25 Ic CHIP 20 MODULE 15 Ic 10 VCE MAX 5 0 0 At Tj = 100 200 T jmax-25 copyright Vincotech 300 400 500 600 V CE (V) 700 ºC 13 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet PFC Figure 1 Typical output characteristics I C = f(V CE) PFC IGBT Figure 2 Typical output characteristics I C = f(V CE) 120 PFC IGBT I C (A) I C (A) 120 100 100 80 80 60 60 40 40 20 20 0 0 0 At tp = Tj = U CC from 1 2 3 4 5 V CE (V) 6 0 1 At tp = Tj = U CC from 250 µs 25 °C 7 V to 17 V in steps of 1 V 2 3 4 V CE (V) 5 6 250 µs 125 °C 7 V to 17 V in steps of 1 V Figure 3 Typical diode forward current as a function of forward voltage I F = f(V F) PFC FWD IF (A) 120 100 80 60 Tj = 25°C 40 Tj = Tjmax-25°C 20 0 0 At tp = copyright Vincotech 14 1 250 2 3 4 5 6 V F (V) 7 µs 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet PFC Figure 4 Typical switching energy losses as a function of collector current E = f(I C) PFC IGBT 0,5 E (mWs) Eon 0,4 Eon 0,3 0,2 Eoff 0,1 Eoff 0,0 0 5 10 15 I C (A) 20 With an inductive load at Tj = 25/125 °C V CE = 400 V U CC 15 V Figure 5 Typical reverse recovery energy loss as a function of collector current E rec = f(I c) PFC IGBT E (mWs) 0,08 Erec Tj = Tjmax -25°C 0,06 0,04 Tj = 25°C Erec 0,02 0,00 0 5 10 15 I C (A) 20 With an inductive load at Tj = 25/125 °C V CE = 400 V U CC = 15 V copyright Vincotech 15 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet PFC Figure 6 Typical switching times as a function of collector current t = f(I C) PFC IGBT t ( µs) 1,00 tdoff 0,10 tdon tr 0,01 tf 0,00 0 5 10 15 I D (A) 20 With an inductive load at Tj = 125 °C V CE = 400 V U CC = 15 V Figure 7 Typical reverse recovery time as a function of collector current t rr = f(I c) PFC FWD t rr( µs) 0,05 trr 0,04 0,03 trr 0,02 0,01 0,00 0 At Tj = V CE = U CC = 5 25/125 400 15 copyright Vincotech 10 15 I C (A) 20 °C V V 16 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet PFC Figure 8 Typical reverse recovery charge as a function of collector current Q rr = f(I C) PFC FWD 0,6 Qrr ( µC) Qrr Tj = Tjmax - 25°C 0,5 0,4 0,3 Qrr Tj = 25°C 0,2 0,1 0,0 At At Tj = V CE = U CC = 0 5 25/125 400 15 10 15 20 I C (A) °C V V Figure 9 Typical reverse recovery current as a function of collector current I RRM = f(I C) PFC FWD 20 IrrM (A) Tj = Tjmax - 25°C IRRM 15 Tj = 25°C IRRM 10 5 0 0 At Tj = V CE = U CC = 5 25/125 400 15 copyright Vincotech 10 15 I C (A) 20 °C V V 17 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet PFC Figure 10 Typical rate of fall of forward and reverse recovery current as a function of collector current dI 0/dt ,dI rec/dt = f(I c) PFC FWD direc / dt (A/ µs) 7000 dI0/dt dIrec/dt 6000 5000 4000 3000 2000 1000 0 0 At Tj = V CE = U CC = 5 25/125 400 15 10 15 I C (A) 20 °C V V Figure 11 IGBT transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) PFC IGBT Figure 12 FWD transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) 101 Zth(j-s) (K/W) Zth(j-s) (K/W) 101 PFC FWD 100 10 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10-2 10-5 At D = R th(j-s) = 10-4 10-3 10-2 10-1 100 t p (s) 10-2 10110 10-5 At D = R th(j-s) = tp/T 2,56 K/W IGBT thermal model values Phase change interface R (K/W) 0,21 1,120 0,829 0,314 0,078 copyright Vincotech D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10-4 10-3 10-2 10-1 100 t p (s) 10110 tp/T 3,87 K/W FWD thermal model values Phase change interface Tau (s) 0,780 0,117 0,044 0,005 0,001 R (K/W) 0,11 0,56 2,29 0,62 0,28 18 Tau (s) 2,763 0,226 0,051 0,008 0,002 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet PFC Figure 13 Power dissipation as a function of heatsink temperature P tot = f(T s) PFC IGBT Figure 14 Collector current as a function of heatsink temperature I C = f(T s) 25 IC (A) Ptot (W) 75 PFC IGBT 60 20 45 15 30 10 15 5 0 0 0 At Tj = 50 175 100 150 T s ( o C) 200 0 At Tj = ºC U CC = Figure 15 Power dissipation as a function of heatsink temperature P tot = f(T s) PFC FWD 50 175 10 100 150 200 ºC V Figure 16 Forward current as a function of heatsink temperature I F = f(T s) PFC FWD 20 IF (A) Ptot (W) 50 T s ( o C) 40 15 30 10 20 5 10 0 0 At Tj = 50 175 copyright Vincotech 100 150 T s ( o C) 0 200 0 At Tj = ºC 19 50 175 100 150 T s ( o C) 200 ºC 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet PFC Figure 17 Safe operating area as a function of collector-emitter voltage I C = f(V CE) 2 IC (A) 10 PFC IGBT 100mS 10uS 101 DC 100uS 100 1mS 10mS 10 -1 102 101 103 V CE (V) At D = Ts = U CC = Tj = single pulse 80 ºC V 15 T jmax ºC Figure 18 Reverse bias safe operating area PFC IGBT I C = f(V CE) IC (A) 70 60 Ic 40 Ic CHIP MODULE 50 30 20 VCE MAX 10 0 0 At Tj = 100 200 T jmax-25 copyright Vincotech 300 400 500 600 V CE (V) 700 ºC 20 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Input Rectifier Bridge Figure 2 Diode transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) 10 20 Rectifier Diode 1 25 Zth(j-s) (K/W) Rectifier Diode IF (A) Figure 1 Typical diode forward current as a function of forward voltage I F= f(V F) 100 15 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 10 -1 5 Tj = 25°C Tj = Tjmax-25°C 0 0,0 At tp = 0,5 250 1,0 1,5 V F (V) 10-2 2,0 10 -5 At D = R th(j-s) = µs Figure 3 Power dissipation as a function of heatsink temperature P tot = f(T s) Rectifier diode 10 -4 10 -3 10 -2 10 10 0 t p (s) 1 10 10 tp/T 3,66 K/W Figure 4 Forward current as a function of heatsink temperature I F = f(T s) Rectifier diode 30 Ptot (W) IF (A) 50 -1 25 40 20 30 15 20 10 10 5 0 0 0 At Tj = 30 150 copyright Vincotech 60 90 120 T s ( o C) 150 0 At Tj = ºC 21 30 150 60 90 120 T s ( o C) 150 ºC 01 Mar. 2015 / Revision 4 Shunt PFC Shunt PLOW (W) 103 Figure 2 Pulse Power R2 DC Shunt 103 Single Repetitive PLOW (W) Figure 1 Pulse Power R1 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Single Repetitive 102 102 1 1 10 10 100 100 10-1 100 101 102 103 104 t pulse (ms) -1 10 dR /R 0 < 5% after 1 pulse dR /R 0 < 5% after 10.000 cycles; duty cycle< 0,1% 0 10 1 10 2 10 3 10 4 10 t pulse (ms) dR /R 0 < 1% after 1 pulse dR /R 0 < 1% after 10.000 cycles; duty cycle< 0,1% Thermistor Figure 1 Typical NTC characteristic as a function of temperature R T = f(T ) Thermistor NTC-typical temperature characteristic R (Ω) 24000 20000 16000 12000 8000 4000 0 25 45 copyright Vincotech 65 85 105 T (°C) 125 22 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Switching Definitions Output Inverter General conditions Tj = 125 °C Figure 1 Output inverter IGBT Turn-off Switching Waveforms & definition of t doff, tEoff (tEoff = integrating time for Eoff) Figure 2 Output inverter IGBT Turn-on Switching Waveforms & definition of tdon, t Eon (tEon = integrating time for Eon) 125 200 % tdoff IC % VCE 100 150 VCE 90% VGE 90% 75 IC VGE 100 VGE 50 VCE tdon tEoff 50 25 VGE10% IC 1% 0 -25 -0,2 IC10% 0 VCE 3% tEon -50 0 0,2 0,4 ● 20-1B06IPB010RC-P955A40 U IN (0%) = 0 U IN (100%) = 5 V C (100%) = 400 I C (100%) = 6 t doff = 0,95 t Eoff = 1,12 0,6 0,8 1 1,2 2,9 3,1 3,3 3,5 3,7 3,9 time(us) time (us) V V V A µs µs U IN (0%) = U IN (100%) = V C (100%) = I C (100%) = t don = t Eon = Figure 3 Output inverter IGBT Turn-off Switching Waveforms & definition of t f 0 5 400 6 0,63 0,84 V V V A µs µs Figure 4 Output inverter IGBT Turn-on Switching Waveforms & definition of tr 125 200 fitted % % VCE IC 175 100 150 IC 90% 75 125 VCE IC 60% 100 50 IC90% 75 IC 40% 25 tr 50 IC10% 0 25 tf -25 0,6 0,7 0,8 0,9 1 1,1 IC10% Ic 0 -25 1,2 3,5 3,6 3,7 3,8 V C (100%) = I C (100%) = tf= copyright Vincotech 400 6 0,02 3,9 4 time(us) time (us) V A µs V C (100%) = I C (100%) = tr= 23 400 6 0,03 V A µs 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Switching Definitions Output Inverter Figure 5 Output inverter IGBT Turn-off Switching Waveforms & definition of t Eoff Figure 6 Output inverter IGBT Turn-on Switching Waveforms & definition of tEon 125 200 % % Pon Eoff 100 150 Poff 75 Eon 100 50 50 25 IC 1% VGE 90% VGE 10% VCE 3% 0 tEon 0 tEoff -25 -0,2 -50 0 0,2 0,4 0,6 0,8 1 2,9 1,2 3,1 3,3 3,5 P off (100%) = E off (100%) = t Eoff = 2,39 0,20 1,12 3,7 3,9 time(us) time (us) kW mJ µs P on (100%) = E on (100%) = t Eon = 2,39 0,32 0,84 kW mJ µs Figure 7 Output inverter FWD Turn-off Switching Waveforms & definition of t rr 120 Id % 80 trr 40 fitted Vd 0 IRRM10% -40 -80 IRRM 90% IRRM 100% -120 3,5 3,6 3,7 3,8 3,9 4 time(us) V d (100%) = I d (100%) = I RRM (100%) = t rr = copyright Vincotech 400 6 -6 0,28 V A A µs 24 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Switching Definitions Output Inverter Figure 8 Output inverter FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9 Output inverter FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % Id 100 Qrr Erec 100 tQrr 50 75 0 50 -50 25 -100 0 -150 tErec Prec -25 3,5 3,6 3,7 3,8 3,9 4 4,1 4,2 4,3 3,6 3,8 4 time(us) I d (100%) = Q rr (100%) = t Qrr = copyright Vincotech 6 0,67 0,55 A µC µs P rec (100%) = E rec (100%) = t Erec = 25 2,39 0,16 0,55 4,2 time(us) 4,4 kW mJ µs 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version without thermal paste, solder pins with thermal paste, solder pins without thermal paste, press fit pins with thermal paste, press fit solder pins Ordering Code in DataMatrix as in packaging barcode as 20-1B06IPB010RC-P955A40 20-1B06IPB010RC-P955A40-/3/ 20-PB06IPB010RC-P955A40Y 20-PB06IPB010RC-P955A40Y-/3/ P955A40 P955A40 P955A40Y P955A40Y P955A40 P955A40-/3/ P955A40Y P955A40Y-/3/ Outline Pin Pin table X 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 45 42 39 36 33 30 27 24 21 18 15 12 9 6 3 0 -0,2 4,8 9,8 14,8 19,8 22,5 25,2 30,2 35,2 40,2 45,2 Y 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 26,4 26,4 26,4 26,4 26,4 26,4 26,4 26,4 26,4 26,4 26,4 Pinout copyright Vincotech 26 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Application data Static logic funtion table V BS RCIN ITRIP <V CCUV– X X X X 15V <V BSUV– X 0 3.3V 15V 15V <3.2V↓ 0 3.3V 0 0 0 15V 15V X > V IT,TH+ 3.3V 0 0 0 15V 15V > V RCIN,TH 0 3.3V 15V 15V > V RCIN,TH 0 0 V CC ENABLE FAULT LO1,2,3 HO1,2,3 0 0 0 High imp /LIN1,2,3 0 High imp /LIN1,2,3 /HIN1,2,3 High imp 0 0 ● 20-1B06IPB010RC-P955A40 ● 20-PB06IPB010RC-P955A40Y copyright Vincotech 27 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Pin Descriptions Pin # Pin Name 1 2 NTC2 3 4 5 6 NTC1 InvS + InvS - Pin Description Temperature sensor connector 1 Temperature sensor connector 2 Inverter sense resistor high-side Inverter sense resistor low-side Enable I/O functionality 7 8 9 10 EN ¬Fault ¬LIN3 ¬LIN2 ¬LIN1 ¬HIN3 11 12 13 ¬HIN2 ¬HIN1 VCC Signal input for high-side V phase Signal input for high-side U phase Driver circuit supply voltage GND2 Inverter ground PFC Bulk voltage sense PFC Switching frequency adjust Rectifier input 14 15 16 17 18 19 20 21 22 23 24 25 26 27 copyright Vincotech VSENSE FREQ AC1 AC2 DC1 + (coil) PFC + (coil) DC1 PFC DC2 DC2 + W V U Fault output, indicates over current or under voltage (negative logic, open-drain output) Signal Signal Signal Signal input input input input for for for for low-side W phase low-side V phase low-side U phase high-side W phase Rectifier input Rectifier output DC + PFC coil connector Rectifier output DC PFC return Inverter input DC Inverter input DC + Output for W phase Output for V phase Output for U phase 28 01 Mar. 2015 / Revision 4 20-PB06IPB010RC-P955A40Y 20-1B06IPB010RC-P955A40 datasheet Packaging instruction Standard packaging quantity (SPQ) >SPQ 100 Standard <SPQ Sample Handling instruction Handling instructions for flow 1B packages see vincotech.com website. Package data Package data for flow 1B packages see vincotech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website. Document No.: Date: 20-xB06IPB010RC-P955A40x-D4-14 2016 Mar. 01 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in la 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 29 01 Mar. 2015 / Revision 4