20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet flow IPM 1B 600 V / 4 A Features flow 1B housing ● Optimized for PFC frequencies of 20kHz..100kHz and inverter frequencies of 4kHz..20kHz ● Input Rectifier, PFC-Boost with integrated PFC-Shunt, PFC-Gate driver and DC-capacitor ● 3 phase inverter with integrated DC Shunt, gate driver circuit incl. bootstrap circuit and over current protection Schematic ● Sense output of DC-current ● Conclusive Power Flow, all power connections on one side, no input output X-ing Target Applications ● ● ● ● Low Power Industrial Drives Motor Integrated Fans and Pumps AirCon Electrical Tools Types ● 20-1B06IPB004RC01-P952A45 ● 20-PB06IPB004RC01-P952A45Y Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1600 V 16 21 A 130 A 80 A 2s 19 29 W Input Rectifier Diode Repetitive peak reverse voltage V RRM DC forward current I FAV Surge forward current I FSM Tj=Tjmax Th=80°C Tc=80°C tp=10ms 50 Hz half sine wave Tj=150°C Tj=Tjmax Th=80°C Tc=80°C I2t-value I 2t Power dissipation P tot Maximum Junction Temperature T jmax 150 °C V CE 650 V 10 14 A tp limited by Tjmax 45 A VCE ≤ 650V, Tj ≤ Top max 45 A 20 30 W PFC IGBT Collector-emitter break down voltage DC collector current Repetitive peak collector current IC I CRM Turn off safe operating area Tj=Tjmax Tj=Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C Power dissipation P tot Gate-emitter peak voltage VGE ±20 V Maximum Junction Temperature T jmax 175 °C copyright Vincotech 1 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 650 V 7 9 A 12 A 11 17 W PFC Inverse Diode Peak Repetitive Reverse Voltage DC forward current V RRM IF Tj=Tjmax Th=80°C Tc=80°C Repetitive peak forward current I FRM tp limited by Tjmax Power dissipation P tot Tj=Tjmax Maximum Junction Temperature T jmax 175 °C V RRM 650 V 9 12 A 100 A 40 A 2s 30 A 15 23 W Th=80°C Tc=80°C PFC Diode Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Th=80°C Tc=80°C Surge forward current I FSM I2t-value I2t Repetitive peak forward current I FRM tp limited by Tjmax Power dissipation P tot Tj=Tjmax Maximum Junction Temperature T jmax 175 °C V CE 600 V 4 6 A 12 A 8 A tp=8,3ms 60 Hz half sine wave Th=80°C Tc=80°C Inverter Transistor Collector-emitter break down voltage DC collector current Repetitive peak collector current IC I CRM Th=80°C Tc=80°C tp limited by Tjmax VCE ≤ 600V, Tj ≤Tjmax Turn off safe operating area Power dissipation P tot Gate-emitter peak voltage VGE Short circuit ratings t SC V CC Maximum Junction Temperature Tj=Tjmax Tj=Tjmax Th=80°C Tc=80°C 11 17 W ±20 V 8 400 µs V T jmax 175 °C V RRM 600 V Tj≤150°C VGE=15V Inverter Diode Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Repetitive peak forward current I FRM tp limited by Tjmax Power dissipation P tot Tj=Tjmax Maximum Junction Temperature T jmax copyright Vincotech 2 Th=80°C Tc=80°C Th=80°C Tc=80°C 5 6 A 8 A 10 15 W 175 °C 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit PFC Shunt IF Tc=25°C 10 A P tot Tc=25°C 9 W VCEO 45 V Collector current IC 500 Peak collector current ICM Base current IB 100 Peak base current IBM 200 Tjmax 150 °C DC forward current Power dissipation PFC Driver* Collector-emitter voltage Maximum Junction Temperature tP≤10 ms 1000 mA * for more information see infineon's datasheet BC817 DC - Shunt DC forward current Power dissipation IF Tc=25°C 8 A P tot Tc=25°C 3,2 W V MAX Tc=25°C 500 V 20 V DC link Capacitor Max.DC voltage Gate Driver* VCC common with PFC driver Supply voltage V CC Input voltage (LIN, HIN, EN) UIN 10 V UOUT VCC + 0.5 V Output voltage (FAULT) * for more information see infineon's datasheet 6ED003L02-F2 Thermal Properties Storage temperature T stg -40…+125 °C Operation temperature under switching condition T op -40…+(Tjmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Insulation Properties Insulation voltage Comparative tracking index copyright Vincotech V is t=2s DC voltage CTI >200 3 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Characteristic Values Parameter Conditions Symbol Value V r [V] or I C [A] or V GE [V] or V CE [V] or I F [A] or V GS [V] V DS [V] I D [A] Tj Min Typ Unit Max Input Rectifier Diode Forward voltage * VF 7 Threshold voltage (for power loss calc. only) V to 7 Slope resistance (for power loss calc. only) rt 7 Reverse current Ir 1200 R th(j-s) Phase-Change Material λ = 3,4W/mK Gate emitter threshold voltage V GE(th) VGE=VCE Collector-emitter saturation voltage* V CEsat Thermal resistance chip to heatsink Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 1,04 0,97 0,87 0,74 25 33 V V mΩ 0,01 3,54 mA K/W * chip data PFC IGBT Collector-emitter cut-off Rise time Turn-off delay time ** Fall time 15 I CES 15 0 650 tr td(off) U CC=15V V IN=5V tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance C ies Output capacitance C oss Reverse transfer capacitance C rss Gate charge QG Thermal resistance chip to heatsink 0,0004 R th(j-s) 400 4 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 3,3 4 4,7 2,18 2,74 2,22 0,04 2 2 107 161 4 2 0,055 0,091 0,020 0,038 V V mA ns mWs 930 f=1MHz 0 25 Tj=25°C 24 pF 4 ±15 520 15 Tj=25°C Phase-Change Material λ = 3,4W/mK 38 nC 4,77 K/W 1,17 0,91 V 8,45 K/W * chip data PFC Inverse Diode Diode forward voltage Thermal resistance chip to heatsink VF R th(j-s) 6 Tj=25°C Tj=125°C Phase-Change Material λ = 3,4W/mK PFC Diode Forward voltage * VF Peak recovery current IRRM Reverse recovery time trr Reverse recovery charge Qrr Reverse recovered energy Peak rate of fall of recovery current Thermal resistance chip to heatsink 15 U CC=15V V IN=5V Erec di(rec)max /dt R th(j-s) Phase-Change Material λ = 3,4W/mK 400 4 Tj=25°C Tj=150°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 2,05 2,10 11 13 18 28 0,12 0,24 0,013 0,033 959 452 2,22 V A ns µC mWs A/µs 6,16 K/W 100 mΩ * chip data PFC Shunt R1 value copyright Vincotech R 4 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Characteristic Values Parameter Conditions Symbol Value V r [V] or I C [A] or V GE [V] or V CE [V] or I F [A] or V GS [V] V DS [V] I D [A] Unit Tj Min Typ Max Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 4,4 5 5,6 0,8 2,20 2,29 2,8 Inverter Transistor Gate emitter threshold voltage Collector-emitter saturation voltage* VGE(th) VCE=VGE V CEsat 0,000075 15 4 Collector-emitter cut-off current incl. Diode I CES 0 600 Gate-emitter leakage current I GES 20 0 Integrated Gate resistor R gint Turn-on delay time ** td(on) Rise time Turn-off delay time ** Fall time td(off) Turn-off energy loss per pulse Eoff Input capacitance C ies Output capacitance C oss Reverse transfer capacitance C rss Thermal resistance chip to heatsink U CC=15V V IN=5V tf Eon R th(j-s) 120 none tr Turn-on energy loss per pulse 0,1 400 4 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C V V mA nA Ω 586 635 21 30 666 749 20 50 0,117 0,198 0,072 0,115 ns mWs 305 f=1MHz 0 25 Tj=25°C pF 18 9 Phase-Change Material λ = 3,4W/mK 8,32 K/W * chip data ** including gate driver Inverter Diode Diode forward voltage * Peak reverse recovery current VF t rr Reverse recovered charge Q rr Reverse recovered energy Thermal resistance chip to heatsink Tj=25°C Tj=150°C 4 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C I RRM Reverse recovery time Peak rate of fall of recovery current 10 U CC=15V V IN=5V ( di rf/dt )max E rec R th(j-s) 400 Phase-Change Material λ = 3,4W/mK 0,7 2,93 2,83 2 3 166 254 0,18 0,35 25 16 0,045 0,085 2,5 V A ns nC A/µs mWs 9,86 K/W 50 mΩ 100 nF * chip data DC - Shunt R2 value Tj=25°C R DC link Capacitor C value copyright Vincotech C 5 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Characteristic Values Parameter Conditions Symbol V r [V] or I C [A] or V GE [V] or V CE [V] or I F [A] or V GS [V] V DS [V] I D [A] Value Unit Tj Min Typ Max Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 13 15 17,5 1,3 2 Gate Driver Supply voltage V CC Quiescent Vcc supply current IQCC Input voltage (LIN, HIN, EN) VIN Input voltage (GATE) VLIN=0V; VHIN=3,3V VGATE Logic "0" input voltage (LIN, HIN) VIH Logic "1" input voltage (LIN, HIN) VIL VCC = 15V Positive going threshold voltage (EN) VEN, TH+ Negative going threshold voltage (EN) VEN, TH- Input clamp voltage (LIN, HIN, EN) ITRIP positive going threshold VIN, CLAMP IIN = 4mA VIT, TH+ Input bias current LIN high I LIN+ VLIN = 3,3V Input bias current LIN low I LIN- VLIN = 0V Input bias current HIN high I HIN+ VHIN = 3,3V Input bias current HIN low I HIN- VHIN = 0V Input bias current EN high IEN+ VHIN = 3,3V Output voltage (FAULT) Low on resistor of pull down trans. (FAULT) V FLT RON, FLT Pulse width for ON or OFF tIN Turn-on propagation delay (LIN, HIN) tON Turn-off propagation delay (LIN, HIN) tOFF FAULT reset time tRST Fixed deadtime between high and low side tDT copyright Vincotech VFAULT=0.5 V VLIN/HIN = 0V or 3,3V VLIN/HIN = 0V or 3,3V VLIN/HIN = 0V & 3,3V 6 0 mA 5 0 15 1,7 2,1 2,4 0,7 0,9 1,1 1,9 2,1 2,3 1,1 1,3 1,5 9 10,3 12 380 445 510 70 100 110 200 70 100 110 200 45 120 VCC 0 45 100 1 V mV µA V Ω µs 400 530 800 360 490 760 4 150 V 310 ns ms ns 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Characteristic Values Parameter Conditions Symbol V r [V] or I C [A] or V GE [V] or V CE [V] or I F [A] or V GS [V] V DS [V] I D [A] Value Tj Min Typ Unit Max Thermistor Rated resistance R Deviation of R100 ∆R/R Power dissipation P Tj=25°C Tj=100°C 22000 -12 Tj=25°C Power dissipation constant Ω 12 % 200 mW Tj=25°C 2 mW/K B-value B(25/50) Tol. ±3% Tj=25°C 3950 K B-value B(25/100) Tol. ±3% Tj=25°C 3998 K Vincotech NTC Reference Tj=25°C B PFC Driver Rb 100,00 Ω Base pull down resistor Rbpd 2,70 KΩ Thermal Resistance Junction - heat sink RthJS ≤105 K/W Base resistor DC Characteristics IC=100 mA, VCE=1 V DC current gain 160 250 400 hFE IC=300 mA, VCE=1 V 100 Tj=25°C Collector-emitter saturation voltage VCEsat Base emitter saturation voltage VBEsat IC=500 mA, IB=50 mA 0,7 V 1,2 AC Characteristics Transition frequency fT IC=50 mA, VCE=5 V, f=100 MHz Collector-base capacitance Ccb f=1 Mhz, VBE=10 V Emitter-base capacitance Ceb VEB= 0,5 V, f=1 MHz 170 Tj=25°C MHz 6 pF copyright Vincotech 60 7 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Output Inverter Figure 1 Typical output characteristics I C = f(V CE) Output inverter IGBT Figure 2 Typical output characteristics I C = f(V CE) 20 IC (A) IC (A) 20 Output inverter IGBT 15 15 10 10 5 5 0 0 0 At tp = Tj = UCC from 1 250 25 10 V to 2 3 4 5 V CE (V) 6 0 At tp = Tj = µs °C 17V in steps of 1V UCC from 1 2 250 150 10 V to 3 4 5 V CE (V) 6 µs °C 17V in steps of 1V Figure 3 Typical diode forward current as a function of forward voltage I F = f(V F) Output inverter FWD IF (A) 20 15 10 5 Tj = Tjmax-25°C Tj = 25°C 0 0 At tp = copyright Vincotech 8 1 250 2 3 V F (V) 4 µs 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Output Inverter Figure 4 Typical switching energy losses as a function of collector current E = f(I C) Output inverter IGBT E (mWs) 0,3 EON 0,25 0,2 EON 0,15 EOFF 0,1 0,05 EOFF 0 0 1 2 3 4 5 I C (A) 6 With an inductive load at Tj = °C 25/125 V CE = 400 V U CC = 15 V Figure 5 Typical reverse recovery energy loss as a function of collector current E rec = f(I C) Output inverter FWD E (mWs) 0,15 Tj = Tjmax -25°C 0,12 0,09 0,06 Tj = 25°C 0,03 0,00 0 1 2 3 4 5 I C (A) 6 With an inductive load at Tj = 25/125 °C V CE = 400 V U CC = 15 V copyright Vincotech 9 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Output Inverter Figure 6 Typical switching times as a function of collector current t = f(I C) Output inverter IGBT 1,00 t ( µs) tdoff tdon 0,10 tf tr 0,01 0,00 0 1 2 3 4 5 I C (A) 6 With an inductive load at Tj = 125 °C V CE = 400 V U CC = 15 V Figure 7 Typical reverse recovery time as a function of collector current t rr = f(I C) Output inverter FWD t rr( µs) 0,4 Tj = Tjmax -25°C 0,3 Tj = 25°C 0,2 0,1 0,0 0 At Tj = V CE = U CC = 1 25/125 400 15 copyright Vincotech 2 3 4 5 I C (A) 6 °C V V 10 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Output Inverter Figure 8 Typical reverse recovery charge as a function of collector current Q rr = f(I C) Output inverter FWD Qrr( µC) 0,6 Tj = Tjmax -25°C 0,5 0,4 0,3 Tj = 25°C 0,2 0,1 0,0 At At Tj = V CE = U CC = 0 1 25/125 400 15 2 3 4 5 I C (A) 6 °C V V Figure 9 Typical reverse recovery current as a function of collector current I RRM = f(I C) Output inverter FWD IrrM (A) 3 Tj = Tjmax -25°C 2,5 Tj = 25°C 2 1,5 1 0,5 0 0 At Tj = V CE = U CC = 1 25/125 400 15 copyright Vincotech 2 3 4 5 I C (A) 6 °C V V 11 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Output Inverter direc / dt (A/µ s) Figure 10 Typical rate of fall of forward and reverse recovery current as a function of collector current dI 0/dt ,dI rec/dt = f(I C) Output inverter FWD 250 dI0/dt dIrec/dt 200 150 100 50 0 0 At Tj = V CE = U CC = 1 25/125 400 15 2 3 4 5 I C (A) 6 °C V V Figure 11 IGBT transient thermal impedance as a function of pulse width Z thJH = f(t p) Output inverter IGBT Figure 12 FWD transient thermal impedance as a function of pulse width Z thJH = f(t p) 101 Zth-JH (K/W) ZthJH (K/W) 101 100 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10 Output inverter FWD -2 10-5 At D = R thJH = 10-4 10-3 10-2 10-1 100 t p (s) 10-2 10-5 101 10 At D = R thJH = tp/T 8,32 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 K/W 10-4 10-3 10-2 10-1 9,86 R (K/W) 0,24 1,23 4,17 1,43 0,87 0,37 R (K/W) 0,21 0,95 4,60 1,66 1,33 1,11 12 10110 K/W FWD thermal model values Thermal grease copyright Vincotech t p (s) tp/T IGBT thermal model values Thermal grease Tau (s) 1,4470 0,1572 0,0448 0,0085 0,0021 0,0004 100 Tau (s) 2,7550 0,2138 0,0490 0,0101 0,0022 0,0005 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Output Inverter Figure 13 Power dissipation as a function of heatsink temperature P tot = f(T h) Output inverter IGBT Figure 14 Collector current as a function of heatsink temperature I C = f(T h) 8 IC (A) Ptot (W) 25 Output inverter IGBT 20 6 15 4 10 2 5 0 0 50 100 150 0 200 0 T h ( o C) At Tj = 175 At Tj = U CC = °C Figure 15 Power dissipation as a function of heatsink temperature P tot = f(T h) Output inverter FWD 50 175 15 100 T h ( o C) 200 °C V Figure 16 Forward current as a function of heatsink temperature I F = f(T h) Output inverter FWD 8 IF (A) Ptot (W) 20 150 16 6 12 4 8 2 4 0 0 0 At Tj = 50 175 copyright Vincotech 100 150 T h ( o C) 200 0 At Tj = °C 13 50 175 100 150 T h ( o C) 200 °C 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Output Inverter Figure 17 Safe operating area as a function of collector-emitter voltage I C = f(V CE) Output inverter IGBT IC (A) 102 1 ms 10 ms 100 ms 101 100 µs DC 1 1 100 10-1 10 -2 101 100 At Tj ≤ U CC = T jmax 15 102 103 V CE (V) ºC V Figure 18 Reverse bias safe operating area IGBT I C = f(V CE) IC (A) 10 IC MAX 8 Ic MODULE Ic CHIP 6 VCE MAX 4 2 0 0 100 200 300 400 500 600 700 V CE (V) At Tj = T jmax-25 copyright Vincotech ºC 14 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet PFC Figure 1 Typical output characteristics I C = f(V CE) PFC IGBT Figure 2 Typical output characteristics I C = f(V CE) 50 PFC IGBT IC (A) IC (A) 50 40 40 30 30 20 20 10 10 0 0 0 At tp = Tj = UCC from 1 250 25 7 V to 2 3 V CE (V) 4 0 At tp = Tj = µs °C 17V in steps of 1V UCC from 1 250 150 7 V to 2 3 V CE (V) 4 µs °C 17V in steps of 1V Figure 3 Typical diode forward current as a function of forward voltage I F = f(V F) PFC FWD IF (A) 60 50 40 Tj = 25°C Tj = Tjmax-25°C 30 20 10 0 0,0 At tp = copyright Vincotech 15 1,0 250 2,0 3,0 V F (V) 4,0 µs 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet PFC Figure 4 Typical switching energy losses as a function of collector current E = f(I C) PFC IGBT E (mWs) 0,25 Eon 0,2 0,15 Eon Eoff 0,1 Eoff 0,05 0 0 2 4 6 8 10 I C (A) 12 With an inductive load at Tj = 25/125 °C V CE = 400 V U CC = 15 V Figure 5 Typical reverse recovery energy loss as a function of collector current E rec = f(I c) PFC IGBT E (mWs) 0,08 Tj = Tjmax -25°C 0,06 Erec 0,04 Erec Tj = 25°C 0,02 0,00 0 2 4 6 8 10 I C (A) 12 With an inductive load at Tj = 25/125 °C V CE = 400 V U CC = 15 V copyright Vincotech 16 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet PFC Figure 6 Typical switching times as a function of collector current t = f(I C) PFC IGBT t ( µs) 1,00 tdoff 0,10 tdon 0,01 tf tr 0,00 0 2 4 6 8 10 I C (A) 12 With an inductive load at Tj = 125 °C V CE = 400 V U CC = 15 V Figure 7 Typical reverse recovery time as a function of collector current t rr = f(I c) PFC FWD t rr( µs) 0,045 trr 0,04 0,035 trr 0,03 0,025 0,02 0,015 0,01 0,005 0 0 At Tj = V CE = U CC = 2 25/125 400 15 copyright Vincotech 4 6 8 10I C (A) 12 °C V V 17 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet PFC Figure 8 Typical reverse recovery charge as a function of collector current Q rr = f(I C) PFC FWD 0,4 Qrr ( µC) Qrr Tj = Tjmax - 25°C 0,3 Qrr 0,2 Tj = 25°C 0,1 0,0 0 At At Tj = V CE = U CC = 2 25/125 400 15 4 6 8 10 I C (A) 12 °C V V Figure 9 Typical reverse recovery current as a function of collector current I RRM = f(I C) PFC FWD IrrM (A) 20 16 Tj = Tjmax - 25°C IRRM 12 IRRM Tj = 25°C 8 4 0 0 At Tj = V CE = U CC = 2 25/125 400 15 copyright Vincotech 4 6 8 10 I C (A) 12 °C V V 18 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet PFC Figure 10 Typical rate of fall of forward and reverse recovery current as a function of collector current dI 0/dt ,dI rec/dt = f(I c) PFC FWD 3000 direc / dt (A/ µs) dIrec/dt dI0/dt 2500 2000 1500 1000 500 0 0 At Tj = V CE = U CC = 2 25/125 400 15 4 6 8 10 I C (A) 12 °C V V Figure 11 IGBT transient thermal impedance as a function of pulse width Z thJH = f(t p) PFC IGBT Figure 12 FWD transient thermal impedance as a function of pulse width Z thJH = f(t p) 101 ZthJH (K/W) ZthJH (K/W) 101 100 10 PFC FWD 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10-2 10-5 At D = R thJH = 10-4 10-3 10-2 10-1 100 t p (s) 10-2 10110 10-5 At D = R thJH = tp/T 4,77 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 K/W 10-4 10-3 10-2 10-1 6,16 R (K/W) 0,24 2,01 1,56 0,71 0,25 R (K/W) 0,16 0,78 3,34 0,97 0,69 0,23 19 10110 K/W FWD thermal model values Thermal grease copyright Vincotech t p (s) tp/T IGBT thermal model values Thermal grease Tau (s) 0,9339 0,09693 0,03256 0,004783 0,000845 100 Tau (s) 2,278 0,2352 0,05952 0,01208 0,00294 0,000584 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet PFC Figure 13 Power dissipation as a function of heatsink temperature P tot = f(T h) PFC IGBT Figure 14 Collector current as a function of heatsink temperature I C = f(T h) PFC IGBT 16 IC (A) Ptot (W) 40 30 12 20 8 10 4 0 0 0 At Tj = 50 175 100 150 T h ( o C) 0 200 At Tj = U CC = ºC Figure 15 Power dissipation as a function of heatsink temperature P tot = f(T h) PFC FWD 50 175 15 100 150 200 ºC V Figure 16 Forward current as a function of heatsink temperature I F = f(T h) PFC FWD 16 Ptot (W) IF (A) 30 T h ( o C) 25 12 20 15 8 10 4 5 0 0 0 At Tj = 50 175 copyright Vincotech 100 150 T h ( o C) 200 0 At Tj = ºC 20 50 175 100 150 T h ( o C) 200 ºC 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet PFC Figure 17 Safe operating area as a function of collector-emitter voltage I D = f(V DS) PFC IGBT ID (A) 102 10uS 100uS 1mS 10mS 100mS DC 101 100 10-1 100 At D = Th = U CC = Tj = 101 10 2 V DS (V) 10 3 single pulse 80 ºC 15 V T jmax ºC Figure 18 Reverse bias safe operating area PFC IGBT I C = f(V CE) IC (A) 35 30 IC MAX 20 Ic Ic CHIP MODULE 25 15 VCE MAX 10 5 0 0 100 200 300 400 500 600 700 V CE (V) At Tj = T jmax-25 copyright Vincotech ºC 21 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Input Rectifier Bridge Figure 1 Typical diode forward current as a function of forward voltage I F= f(V F) Rectifier diode Figure 2 Diode transient thermal impedance as a function of pulse width Z thJH = f(t p) Rectifier diode 101 IF (A) ZthJC (K/W) 25 20 100 15 10 Tj = Tjmax-25°C D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 5 Tj = 25°C 0 0,0 0,5 1,0 1,5 V F (V) 2,0 10 -2 t p (s) 10-5 At tp = 250 10-4 At D = R thJH = µs Figure 3 Power dissipation as a function of heatsink temperature P tot = f(T h) Rectifier diode 10-3 10-2 10-1 10110 tp/T 3,54 K/W Figure 4 Forward current as a function of heatsink temperature I F = f(T h) Rectifier diode 20 Ptot (W) IF (A) 50 100 40 16 30 12 20 8 10 4 0 0 0 At Tj = 30 150 copyright Vincotech 60 90 120 T h ( o C) 0 150 At Tj = ºC 22 30 150 60 90 120 T h ( o C) 150 ºC 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Shunt PFC Shunt PLOW (W) 103 Figure 2 Pulse Power R2 DC Shunt 103 Single Repetitive PLOW (W) Figure 1 Pulse Power R1 Single Repetitive 102 102 101 101 100 0 10 -1 10 0 1 10 2 10 3 10 4 10 10 t pulse (ms) 10-1 dR /R 0 < 1% after 1 pulse dR /R 0 < 1% after 10.000 cycles; duty cycle< 0,1% 100 101 102 103 104 t pulse (ms) dR /R 0 < 1% after 1 pulse dR /R 0 < 1% after 10.000 cycles; duty cycle< 0,1% Thermistor Figure 1 Typical NTC characteristic as a function of temperature R T = f(T ) Thermistor NTC-typical temperature characteristic R (Ω) 24000 20000 16000 12000 8000 4000 0 25 45 copyright Vincotech 65 85 105 T (°C) 125 23 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Switching Definitions Output Inverter General conditions Tj = 125 °C Figure 1 Output inverter IGBT Turn-off Switching Waveforms & definition of t doff, t Eoff (t E off = integrating time for E off) Figure 2 Output inverter IGBT Turn-on Switching Waveforms & definition of t don, t Eon (t E on = integrating time for E on) 125 200 tdoff % VCE UIN 150 VCE 90% UIN 90% IC % 100 75 100 IC VCE UIN 50 tdon tEoff 50 25 UIN 10% IC 10% 0 0 VCE 3% tEon IC 1% -25 -0,2 -50 0 0,2 0,4 0,6 0,8 1 1,2 2,8 3 3,2 3,4 3,6 3,8 UIN (0%) = UIN (100%) = V C (100%) = I C (100%) = t doff = t E off = 0 5 400 4 0,75 0,95 4 4,2 time(us) time (us) V V V A µs µs UIN (0%) = UIN (100%) = V C (100%) = I C (100%) = t don = t E on = Figure 3 Output inverter IGBT Turn-off Switching Waveforms & definition of t f 0 5 400 4 0,64 0,82 V V V A µs µs Figure 4 Output inverter IGBT Turn-on Switching Waveforms & definition of t r 120 200 fitted % VCE IC % 100 150 IC 90% 80 VCE 100 60 IC IC 60% 90% tr 40 IC 40% 50 20 Ic IC 10% 0 IC10% 0 tf -20 0,6 0,7 V C (100%) = I C (100%) = tf = copyright Vincotech -50 0,8 400 4 0,05 0,9 time (us) 3,6 1 3,65 3,7 3,75 3,8 time(us) V A µs V C (100%) = I C (100%) = tr = 24 400 4 0,03 V A µs 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Switching Definitions Output Inverter Figure 5 Output inverter IGBT Turn-off Switching Waveforms & definition of t Eoff Figure 6 Output inverter IGBT Turn-on Switching Waveforms & definition of t Eon 120 200 IC 1% % Poff 100 % Eoff Pon 150 80 Eon 100 60 40 50 20 VCE 3% UIN 10% UIN 90% 0 tEon 0 tEoff -20 -0,2 -50 0 0,2 0,4 0,6 0,8 1 1,2 2,8 3 3,2 3,4 3,6 3,8 time (us) P off (100%) = E off (100%) = t E off = 1,61 0,12 0,95 4 4,2 time(us) kW mJ µs P on (100%) = E on (100%) = t E on = 1,61 0,20 0,82 kW mJ µs Figure 7 Output inverter FWD Turn-off Switching Waveforms & definition of t rr 120 Id % 80 trr 40 fitted 0 Vd IRRM 10% -40 IRRM 90% IRRM 100% -80 -120 3,6 V d (100%) = I d (100%) = I RRM (100%) = t rr = copyright Vincotech 25 3,7 3,8 400 4 -3 0,25 3,9 time(us) 4 V A A µs 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Switching Definitions Output Inverter Figure 8 Output inverter FWD Turn-on Switching Waveforms & definition of t Qrr (t Q rr = integrating time for Q rr) Figure 9 Output inverter FWD Turn-on Switching Waveforms & definition of t Erec (t Erec= integrating time for E rec) 150 120 % % Id 100 Erec 100 Qrr 80 tErec tQrr 50 60 40 0 20 -50 Prec 0 -100 -20 3,6 3,8 4 4,2 4,4 3,6 3,8 4 I d (100%) = Q rr (100%) = t Q rr = copyright Vincotech 4 0,35 0,55 4,2 4,4 time(us) time(us) A µC µs P rec (100%) = E rec (100%) = t E rec = 26 1,61 0,09 0,55 kW mJ µs 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Switching Definitions PFC General conditions Tj = 125 °C Figure 1 PFC IGBT Turn-off Switching Waveforms & definition of t doff, t Eoff (t E off = integrating time for E off) Figure 2 PFC IGBT Turn-on Switching Waveforms & definition of t don, t Eon (t E on = integrating time for E on) 125 500 % tdoff % 100 400 VCE 90% UGATE 90% IC 75 300 UGATE IC 50 tEoff 200 UGATE 25 VCE IC 1% VCE 100 tdon 0 IC 10% UGATE 10% 0 -25 tEon -50 -0,1 0 U GATE (0%) = U GATE (100%) = V C (100%) = I C (100%) = t doff = t E off = 0,1 0 15 400 4 0,16 0,20 time (us) -100 2,97 0,2 3 3,03 3,06 3,09 time(us) V V V A µs µs U GATE (0%) = U GATE (100%) = V C (100%) = I C (100%) = t don = t E on = Figure 3 Turn-off Switching Waveforms & definition of t f VCE3% PFC IGBT 0 15 400 4 0,02 0,05 V V V A µs µs Figure 4 Turn-on Switching Waveforms & definition of t r 120 PFC IGBT 200 fitted % % IC 100 150 Ic 90% Ic 80 Ic 60% 100 60 VCE IC 90% tr Ic 40% 40 50 20 Ic10% IC 10% VCE 0 0 tf -50 3,01 -20 0 0,03 0,06 0,09 0,12 0,15 3,02 3,03 time (us) V C (100%) = I C (100%) = tf = copyright Vincotech 400 4 0,00 3,04 time(us) V A µs V C (100%) = I C (100%) = tr = 27 400 4 0,002 V A µs 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Switching Definitions PFC Figure 5 PFC IGBT Turn-off Switching Waveforms & definition of t Eoff Figure 6 PFC IGBT Turn-on Switching Waveforms & definition of t Eon 120 % Eoff 350 % Ic 1% Pon 300 100 250 80 200 60 150 Eon 40 100 20 50 U GATE 90% Poff 0 Uce 3% U GATE 10% 0 tEoff tEon -20 -0,1 P off (100%) = E off (100%) = t E off = -50 0 1,59 0,04 0,20 0,1 time (us) 0,2 3 kW mJ µs 3,02 P on (100%) = E on (100%) = t E on = 3,04 1,5892 0,09 0,0505 3,06 time(us) 3,08 kW mJ µs Figure 7 PFC FWD Turn-off Switching Waveforms & definition of t rr 150 % 100 Id trr 50 0 Ud IRRM 10% -50 -100 fitted -150 -200 -250 IRRM 90% -300 IRRM 100% -350 3,01 3,02 3,03 3,04 3,05 3,06 time(us) V d (100%) = I d (100%) = I RRM (100%) = t rr = copyright Vincotech 28 400 4 -13 0,03 V A A µs 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Switching Definitions PFC Figure 8 PFC FWD Turn-on Switching Waveforms & definition of t Qrr Figure 9 PFC FWD Turn-on Switching Waveforms & definition of t Erec (tQrr= integrating time for Qrr) (tErec= integrating time for Erec) 200 125 % % Id Erec 100 Qrr 100 tQint tErec 75 0 50 Prec 25 -100 0 -200 -25 -300 3,02 3,04 I d (100%) = Q rr (100%) = t Qint = copyright Vincotech 3,06 4 0,24 0,06 3,08 time(us) -50 3,02 3,1 A µC µs P rec (100%) = E rec (100%) = t E rec = 29 3,04 3,06 1,59 0,03 0,06 3,08 time(us) 3,1 kW mJ µs 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version Ordering Code in DataMatrix as in packaging barcode as without thermal paste, solder pins with thermal paste, solder pins without thermal paste, press fit pins with thermal paste, press fit pins 20-1B06IPB004RC01-P952A45 20-1B06IPB004RC01-P952A45-/3/ 20-PB06IPB004RC01-P952A45Y 20-PB06IPB004RC01-P952A45Y-/3/ P952A45 P952A45 P952A45Y P952A45Y P952A45 P952A45-/3/ P952A45Y P952A45Y-/3/ Outline Pin Pin table X 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 45 42 39 36 33 30 27 24 21 18 15 12 9 6 3 0 -0,2 4,8 9,8 14,8 19,8 22,5 25,2 30,2 35,2 40,2 45,2 Y 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 26,4 26,4 26,4 26,4 26,4 26,4 26,4 26,4 26,4 26,4 26,4 Pinout copyright Vincotech 30 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet Application data Static logic funtion table VCC VBS RCIN ITRIP ENABLE FAULT LO1,2,3 HO1,2,3 <VCCUV– X X X X 0 0 0 15V <VBSUV– X 0 3.3V 15V 15V <3.2V↓ 0 3.3V 0 0 0 15V 15V X > VIT,TH+ 3.3V 0 0 0 15V 15V > VRCIN,TH 0 3.3V 15V 15V > VRCIN,TH 0 0 High imp /LIN1,2,3 0 High imp /LIN1,2,3 /HIN1,2,3 High imp 0 0 Pin Descriptions Pin # Pin Name 1 2 NTC2 NTC1 InvS + InvS - Temperature sensor connector 1 Temperature sensor connector 2 Inverter sense resistor high-side Inverter sense resistor low-side EN ¬Fault ¬LIN3 Enable I/O functionality Fault output, indicates over current or under voltage (negative logic, open-drain output) 3 4 5 6 7 Pin Description Signal input for low-side W phase Signal input for low-side V phase Signal input for low-side U phase 8 9 ¬LIN2 ¬LIN1 10 11 ¬HIN3 ¬HIN2 12 13 ¬HIN1 VCC Signal Signal Signal Driver 14 GND2 Inverter ground 15 16 17 18 VSENSE FREQ AC1 AC2 19 20 21 22 23 24 25 26 27 DC1 + (coil) PFC + (coil) DC1 PFC DC2 DC2 + W V U copyright Vincotech input for high-side W phase input for high-side V phase input for high-side U phase circuit supply voltage PFC Bulk voltage sense PFC Switching frequency adjust Rectifier input Rectifier input Rectifier output DC + PFC coil connector Rectifier output DC PFC return Inverter input DC Inverter input DC + Output for W phase Output for V phase Output for U phase 31 19 Jun. 2015 / Revision 1 20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01-P952A45Y datasheet DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 32 19 Jun. 2015 / Revision 1