20-1B06IPB004RC01-P952A45 20-PB06IPB004RC01

20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
flow IPM 1B
600 V / 4 A
Features
flow 1B housing
● Optimized for PFC frequencies of 20kHz..100kHz
and inverter frequencies of 4kHz..20kHz
● Input Rectifier, PFC-Boost with integrated
PFC-Shunt, PFC-Gate driver and DC-capacitor
● 3 phase inverter with integrated DC Shunt, gate driver
circuit incl. bootstrap circuit and over current protection
Schematic
● Sense output of DC-current
● Conclusive Power Flow, all power connections on
one side, no input output X-ing
Target Applications
●
●
●
●
Low Power Industrial Drives
Motor Integrated Fans and Pumps
AirCon
Electrical Tools
Types
● 20-1B06IPB004RC01-P952A45
● 20-PB06IPB004RC01-P952A45Y
Maximum Ratings
T j=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1600
V
16
21
A
130
A
80
A 2s
19
29
W
Input Rectifier Diode
Repetitive peak reverse voltage
V RRM
DC forward current
I FAV
Surge forward current
I FSM
Tj=Tjmax
Th=80°C
Tc=80°C
tp=10ms
50 Hz half sine wave
Tj=150°C
Tj=Tjmax
Th=80°C
Tc=80°C
I2t-value
I 2t
Power dissipation
P tot
Maximum Junction Temperature
T jmax
150
°C
V CE
650
V
10
14
A
tp limited by Tjmax
45
A
VCE ≤ 650V, Tj ≤ Top max
45
A
20
30
W
PFC IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
IC
I CRM
Turn off safe operating area
Tj=Tjmax
Tj=Tjmax
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Power dissipation
P tot
Gate-emitter peak voltage
VGE
±20
V
Maximum Junction Temperature
T jmax
175
°C
copyright Vincotech
1
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
650
V
7
9
A
12
A
11
17
W
PFC Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
V RRM
IF
Tj=Tjmax
Th=80°C
Tc=80°C
Repetitive peak forward current
I FRM
tp limited by Tjmax
Power dissipation
P tot
Tj=Tjmax
Maximum Junction Temperature
T jmax
175
°C
V RRM
650
V
9
12
A
100
A
40
A 2s
30
A
15
23
W
Th=80°C
Tc=80°C
PFC Diode
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Th=80°C
Tc=80°C
Surge forward current
I FSM
I2t-value
I2t
Repetitive peak forward current
I FRM
tp limited by Tjmax
Power dissipation
P tot
Tj=Tjmax
Maximum Junction Temperature
T jmax
175
°C
V CE
600
V
4
6
A
12
A
8
A
tp=8,3ms
60 Hz half sine wave
Th=80°C
Tc=80°C
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
IC
I CRM
Th=80°C
Tc=80°C
tp limited by Tjmax
VCE ≤ 600V, Tj ≤Tjmax
Turn off safe operating area
Power dissipation
P tot
Gate-emitter peak voltage
VGE
Short circuit ratings
t SC
V CC
Maximum Junction Temperature
Tj=Tjmax
Tj=Tjmax
Th=80°C
Tc=80°C
11
17
W
±20
V
8
400
µs
V
T jmax
175
°C
V RRM
600
V
Tj≤150°C
VGE=15V
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Repetitive peak forward current
I FRM
tp limited by Tjmax
Power dissipation
P tot
Tj=Tjmax
Maximum Junction Temperature
T jmax
copyright Vincotech
2
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
5
6
A
8
A
10
15
W
175
°C
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
PFC Shunt
IF
Tc=25°C
10
A
P tot
Tc=25°C
9
W
VCEO
45
V
Collector current
IC
500
Peak collector current
ICM
Base current
IB
100
Peak base current
IBM
200
Tjmax
150
°C
DC forward current
Power dissipation
PFC Driver*
Collector-emitter voltage
Maximum Junction Temperature
tP≤10 ms
1000
mA
* for more information see infineon's datasheet BC817
DC - Shunt
DC forward current
Power dissipation
IF
Tc=25°C
8
A
P tot
Tc=25°C
3,2
W
V MAX
Tc=25°C
500
V
20
V
DC link Capacitor
Max.DC voltage
Gate Driver*
VCC common with PFC driver
Supply voltage
V CC
Input voltage (LIN, HIN, EN)
UIN
10
V
UOUT
VCC + 0.5
V
Output voltage (FAULT)
* for more information see infineon's datasheet 6ED003L02-F2
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation temperature under switching condition
T op
-40…+(Tjmax - 25)
°C
4000
V
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Insulation Properties
Insulation voltage
Comparative tracking index
copyright Vincotech
V is
t=2s
DC voltage
CTI
>200
3
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Characteristic Values
Parameter
Conditions
Symbol
Value
V r [V] or I C [A] or
V GE [V] or
V CE [V] or I F [A] or
V GS [V]
V DS [V]
I D [A]
Tj
Min
Typ
Unit
Max
Input Rectifier Diode
Forward voltage *
VF
7
Threshold voltage (for power loss calc. only)
V to
7
Slope resistance (for power loss calc. only)
rt
7
Reverse current
Ir
1200
R th(j-s)
Phase-Change
Material λ =
3,4W/mK
Gate emitter threshold voltage
V GE(th)
VGE=VCE
Collector-emitter saturation voltage*
V CEsat
Thermal resistance chip to heatsink
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,04
0,97
0,87
0,74
25
33
V
V
mΩ
0,01
3,54
mA
K/W
* chip data
PFC IGBT
Collector-emitter cut-off
Rise time
Turn-off delay time **
Fall time
15
I CES
15
0
650
tr
td(off)
U CC=15V
V IN=5V
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Input capacitance
C ies
Output capacitance
C oss
Reverse transfer capacitance
C rss
Gate charge
QG
Thermal resistance chip to heatsink
0,0004
R th(j-s)
400
4
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
3,3
4
4,7
2,18
2,74
2,22
0,04
2
2
107
161
4
2
0,055
0,091
0,020
0,038
V
V
mA
ns
mWs
930
f=1MHz
0
25
Tj=25°C
24
pF
4
±15
520
15
Tj=25°C
Phase-Change
Material λ =
3,4W/mK
38
nC
4,77
K/W
1,17
0,91
V
8,45
K/W
* chip data
PFC Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink
VF
R th(j-s)
6
Tj=25°C
Tj=125°C
Phase-Change
Material λ =
3,4W/mK
PFC Diode
Forward voltage *
VF
Peak recovery current
IRRM
Reverse recovery time
trr
Reverse recovery charge
Qrr
Reverse recovered energy
Peak rate of fall of recovery current
Thermal resistance chip to heatsink
15
U CC=15V
V IN=5V
Erec
di(rec)max
/dt
R th(j-s)
Phase-Change
Material λ =
3,4W/mK
400
4
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,05
2,10
11
13
18
28
0,12
0,24
0,013
0,033
959
452
2,22
V
A
ns
µC
mWs
A/µs
6,16
K/W
100
mΩ
* chip data
PFC Shunt
R1 value
copyright Vincotech
R
4
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Characteristic Values
Parameter
Conditions
Symbol
Value
V r [V] or I C [A] or
V GE [V] or
V CE [V] or I F [A] or
V GS [V]
V DS [V]
I D [A]
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
4,4
5
5,6
0,8
2,20
2,29
2,8
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage*
VGE(th)
VCE=VGE
V CEsat
0,000075
15
4
Collector-emitter cut-off current incl. Diode
I CES
0
600
Gate-emitter leakage current
I GES
20
0
Integrated Gate resistor
R gint
Turn-on delay time **
td(on)
Rise time
Turn-off delay time **
Fall time
td(off)
Turn-off energy loss per pulse
Eoff
Input capacitance
C ies
Output capacitance
C oss
Reverse transfer capacitance
C rss
Thermal resistance chip to heatsink
U CC=15V
V IN=5V
tf
Eon
R th(j-s)
120
none
tr
Turn-on energy loss per pulse
0,1
400
4
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
V
mA
nA
Ω
586
635
21
30
666
749
20
50
0,117
0,198
0,072
0,115
ns
mWs
305
f=1MHz
0
25
Tj=25°C
pF
18
9
Phase-Change
Material λ =
3,4W/mK
8,32
K/W
* chip data
** including gate driver
Inverter Diode
Diode forward voltage *
Peak reverse recovery current
VF
t rr
Reverse recovered charge
Q rr
Reverse recovered energy
Thermal resistance chip to heatsink
Tj=25°C
Tj=150°C
4
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
I RRM
Reverse recovery time
Peak rate of fall of recovery current
10
U CC=15V
V IN=5V
( di rf/dt )max
E rec
R th(j-s)
400
Phase-Change
Material λ =
3,4W/mK
0,7
2,93
2,83
2
3
166
254
0,18
0,35
25
16
0,045
0,085
2,5
V
A
ns
nC
A/µs
mWs
9,86
K/W
50
mΩ
100
nF
* chip data
DC - Shunt
R2 value
Tj=25°C
R
DC link Capacitor
C value
copyright Vincotech
C
5
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Characteristic Values
Parameter
Conditions
Symbol
V r [V] or I C [A] or
V GE [V] or
V CE [V] or I F [A] or
V GS [V]
V DS [V]
I D [A]
Value
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
13
15
17,5
1,3
2
Gate Driver
Supply voltage
V CC
Quiescent Vcc supply current
IQCC
Input voltage (LIN, HIN, EN)
VIN
Input voltage (GATE)
VLIN=0V; VHIN=3,3V
VGATE
Logic "0" input voltage (LIN, HIN)
VIH
Logic "1" input voltage (LIN, HIN)
VIL
VCC = 15V
Positive going threshold voltage (EN)
VEN, TH+
Negative going threshold voltage (EN)
VEN, TH-
Input clamp voltage (LIN, HIN, EN)
ITRIP positive going threshold
VIN, CLAMP IIN = 4mA
VIT, TH+
Input bias current LIN high
I LIN+
VLIN = 3,3V
Input bias current LIN low
I LIN-
VLIN = 0V
Input bias current HIN high
I HIN+
VHIN = 3,3V
Input bias current HIN low
I HIN-
VHIN = 0V
Input bias current EN high
IEN+
VHIN = 3,3V
Output voltage (FAULT)
Low on resistor of pull down trans. (FAULT)
V FLT
RON, FLT
Pulse width for ON or OFF
tIN
Turn-on propagation delay (LIN, HIN)
tON
Turn-off propagation delay (LIN, HIN)
tOFF
FAULT reset time
tRST
Fixed deadtime between high and low side
tDT
copyright Vincotech
VFAULT=0.5 V
VLIN/HIN = 0V or 3,3V
VLIN/HIN = 0V or 3,3V
VLIN/HIN = 0V & 3,3V
6
0
mA
5
0
15
1,7
2,1
2,4
0,7
0,9
1,1
1,9
2,1
2,3
1,1
1,3
1,5
9
10,3
12
380
445
510
70
100
110
200
70
100
110
200
45
120
VCC
0
45
100
1
V
mV
µA
V
Ω
µs
400
530
800
360
490
760
4
150
V
310
ns
ms
ns
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Characteristic Values
Parameter
Conditions
Symbol
V r [V] or I C [A] or
V GE [V] or
V CE [V] or I F [A] or
V GS [V]
V DS [V]
I D [A]
Value
Tj
Min
Typ
Unit
Max
Thermistor
Rated resistance
R
Deviation of R100
∆R/R
Power dissipation
P
Tj=25°C
Tj=100°C
22000
-12
Tj=25°C
Power dissipation constant
Ω
12
%
200
mW
Tj=25°C
2
mW/K
B-value
B(25/50)
Tol. ±3%
Tj=25°C
3950
K
B-value
B(25/100)
Tol. ±3%
Tj=25°C
3998
K
Vincotech NTC Reference
Tj=25°C
B
PFC Driver
Rb
100,00
Ω
Base pull down resistor
Rbpd
2,70
KΩ
Thermal Resistance Junction - heat sink
RthJS
≤105
K/W
Base resistor
DC Characteristics
IC=100 mA, VCE=1 V
DC current gain
160
250
400
hFE
IC=300 mA, VCE=1 V
100
Tj=25°C
Collector-emitter saturation voltage
VCEsat
Base emitter saturation voltage
VBEsat
IC=500 mA, IB=50 mA
0,7
V
1,2
AC Characteristics
Transition frequency
fT
IC=50 mA, VCE=5 V, f=100 MHz
Collector-base capacitance
Ccb
f=1 Mhz, VBE=10 V
Emitter-base capacitance
Ceb
VEB= 0,5 V, f=1 MHz
170
Tj=25°C
MHz
6
pF
copyright Vincotech
60
7
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
Figure 1
Typical output characteristics
I C = f(V CE)
Output inverter IGBT
Figure 2
Typical output characteristics
I C = f(V CE)
20
IC (A)
IC (A)
20
Output inverter IGBT
15
15
10
10
5
5
0
0
0
At
tp =
Tj =
UCC from
1
250
25
10 V to
2
3
4
5
V CE (V)
6
0
At
tp =
Tj =
µs
°C
17V in steps of 1V
UCC from
1
2
250
150
10 V to
3
4
5
V CE (V)
6
µs
°C
17V in steps of 1V
Figure 3
Typical diode forward current as
a function of forward voltage
I F = f(V F)
Output inverter FWD
IF (A)
20
15
10
5
Tj = Tjmax-25°C
Tj = 25°C
0
0
At
tp =
copyright Vincotech
8
1
250
2
3
V F (V)
4
µs
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
Figure 4
Typical switching energy losses
as a function of collector current
E = f(I C)
Output inverter IGBT
E (mWs)
0,3
EON
0,25
0,2
EON
0,15
EOFF
0,1
0,05
EOFF
0
0
1
2
3
4
5
I C (A)
6
With an inductive load at
Tj =
°C
25/125
V CE =
400
V
U CC =
15
V
Figure 5
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
Output inverter FWD
E (mWs)
0,15
Tj = Tjmax -25°C
0,12
0,09
0,06
Tj = 25°C
0,03
0,00
0
1
2
3
4
5
I C (A)
6
With an inductive load at
Tj =
25/125
°C
V CE =
400
V
U CC =
15
V
copyright Vincotech
9
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
Figure 6
Typical switching times as a
function of collector current
t = f(I C)
Output inverter IGBT
1,00
t ( µs)
tdoff
tdon
0,10
tf
tr
0,01
0,00
0
1
2
3
4
5
I C (A)
6
With an inductive load at
Tj =
125
°C
V CE =
400
V
U CC =
15
V
Figure 7
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
Output inverter FWD
t rr( µs)
0,4
Tj = Tjmax -25°C
0,3
Tj = 25°C
0,2
0,1
0,0
0
At
Tj =
V CE =
U CC =
1
25/125
400
15
copyright Vincotech
2
3
4
5
I C (A)
6
°C
V
V
10
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
Figure 8
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Output inverter FWD
Qrr( µC)
0,6
Tj = Tjmax -25°C
0,5
0,4
0,3
Tj = 25°C
0,2
0,1
0,0
At
At
Tj =
V CE =
U CC =
0
1
25/125
400
15
2
3
4
5
I C (A)
6
°C
V
V
Figure 9
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Output inverter FWD
IrrM (A)
3
Tj = Tjmax -25°C
2,5
Tj = 25°C
2
1,5
1
0,5
0
0
At
Tj =
V CE =
U CC =
1
25/125
400
15
copyright Vincotech
2
3
4
5
I C (A)
6
°C
V
V
11
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
direc / dt (A/µ s)
Figure 10
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
Output inverter FWD
250
dI0/dt
dIrec/dt
200
150
100
50
0
0
At
Tj =
V CE =
U CC =
1
25/125
400
15
2
3
4
5
I C (A)
6
°C
V
V
Figure 11
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
Output inverter IGBT
Figure 12
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
Zth-JH (K/W)
ZthJH (K/W)
101
100
100
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
10
Output inverter FWD
-2
10-5
At
D =
R thJH =
10-4
10-3
10-2
10-1
100
t p (s)
10-2
10-5
101 10
At
D =
R thJH =
tp/T
8,32
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
K/W
10-4
10-3
10-2
10-1
9,86
R (K/W)
0,24
1,23
4,17
1,43
0,87
0,37
R (K/W)
0,21
0,95
4,60
1,66
1,33
1,11
12
10110
K/W
FWD thermal model values
Thermal grease
copyright Vincotech
t p (s)
tp/T
IGBT thermal model values
Thermal grease
Tau (s)
1,4470
0,1572
0,0448
0,0085
0,0021
0,0004
100
Tau (s)
2,7550
0,2138
0,0490
0,0101
0,0022
0,0005
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
Figure 13
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
Output inverter IGBT
Figure 14
Collector current as a
function of heatsink temperature
I C = f(T h)
8
IC (A)
Ptot (W)
25
Output inverter IGBT
20
6
15
4
10
2
5
0
0
50
100
150
0
200
0
T h ( o C)
At
Tj =
175
At
Tj =
U CC =
°C
Figure 15
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
Output inverter FWD
50
175
15
100
T h ( o C)
200
°C
V
Figure 16
Forward current as a
function of heatsink temperature
I F = f(T h)
Output inverter FWD
8
IF (A)
Ptot (W)
20
150
16
6
12
4
8
2
4
0
0
0
At
Tj =
50
175
copyright Vincotech
100
150
T h ( o C)
200
0
At
Tj =
°C
13
50
175
100
150
T h ( o C)
200
°C
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Output Inverter
Figure 17
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE)
Output inverter IGBT
IC (A)
102
1 ms
10 ms
100 ms
101
100 µs
DC
1
1
100
10-1
10
-2
101
100
At
Tj ≤
U CC =
T jmax
15
102
103
V CE (V)
ºC
V
Figure 18
Reverse bias safe operating area
IGBT
I C = f(V CE)
IC (A)
10
IC MAX
8
Ic
MODULE
Ic CHIP
6
VCE MAX
4
2
0
0
100
200
300
400
500
600
700
V CE (V)
At
Tj =
T jmax-25
copyright Vincotech
ºC
14
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
PFC
Figure 1
Typical output characteristics
I C = f(V CE)
PFC IGBT
Figure 2
Typical output characteristics
I C = f(V CE)
50
PFC IGBT
IC (A)
IC (A)
50
40
40
30
30
20
20
10
10
0
0
0
At
tp =
Tj =
UCC from
1
250
25
7 V to
2
3
V CE (V)
4
0
At
tp =
Tj =
µs
°C
17V in steps of 1V
UCC from
1
250
150
7 V to
2
3
V CE (V)
4
µs
°C
17V in steps of 1V
Figure 3
Typical diode forward current as
a function of forward voltage
I F = f(V F)
PFC FWD
IF (A)
60
50
40
Tj = 25°C
Tj = Tjmax-25°C
30
20
10
0
0,0
At
tp =
copyright Vincotech
15
1,0
250
2,0
3,0
V F (V)
4,0
µs
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
PFC
Figure 4
Typical switching energy losses
as a function of collector current
E = f(I C)
PFC IGBT
E (mWs)
0,25
Eon
0,2
0,15
Eon
Eoff
0,1
Eoff
0,05
0
0
2
4
6
8
10
I C (A)
12
With an inductive load at
Tj =
25/125
°C
V CE =
400
V
U CC =
15
V
Figure 5
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
PFC IGBT
E (mWs)
0,08
Tj = Tjmax -25°C
0,06
Erec
0,04
Erec
Tj = 25°C
0,02
0,00
0
2
4
6
8
10
I C (A)
12
With an inductive load at
Tj =
25/125
°C
V CE =
400
V
U CC =
15
V
copyright Vincotech
16
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
PFC
Figure 6
Typical switching times as a
function of collector current
t = f(I C)
PFC IGBT
t ( µs)
1,00
tdoff
0,10
tdon
0,01
tf
tr
0,00
0
2
4
6
8
10 I C (A)
12
With an inductive load at
Tj =
125
°C
V CE =
400
V
U CC =
15
V
Figure 7
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
PFC FWD
t rr( µs)
0,045
trr
0,04
0,035
trr
0,03
0,025
0,02
0,015
0,01
0,005
0
0
At
Tj =
V CE =
U CC =
2
25/125
400
15
copyright Vincotech
4
6
8
10I C (A)
12
°C
V
V
17
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
PFC
Figure 8
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
PFC FWD
0,4
Qrr ( µC)
Qrr
Tj = Tjmax - 25°C
0,3
Qrr
0,2
Tj = 25°C
0,1
0,0
0
At
At
Tj =
V CE =
U CC =
2
25/125
400
15
4
6
8
10
I C (A)
12
°C
V
V
Figure 9
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
PFC FWD
IrrM (A)
20
16
Tj = Tjmax - 25°C
IRRM
12
IRRM
Tj = 25°C
8
4
0
0
At
Tj =
V CE =
U CC =
2
25/125
400
15
copyright Vincotech
4
6
8
10
I C (A)
12
°C
V
V
18
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
PFC
Figure 10
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
PFC FWD
3000
direc / dt (A/ µs)
dIrec/dt
dI0/dt
2500
2000
1500
1000
500
0
0
At
Tj =
V CE =
U CC =
2
25/125
400
15
4
6
8
10 I C (A)
12
°C
V
V
Figure 11
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
PFC IGBT
Figure 12
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
ZthJH (K/W)
ZthJH (K/W)
101
100
10
PFC FWD
100
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
-1
10-2
10-5
At
D =
R thJH =
10-4
10-3
10-2
10-1
100
t p (s)
10-2
10110
10-5
At
D =
R thJH =
tp/T
4,77
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
K/W
10-4
10-3
10-2
10-1
6,16
R (K/W)
0,24
2,01
1,56
0,71
0,25
R (K/W)
0,16
0,78
3,34
0,97
0,69
0,23
19
10110
K/W
FWD thermal model values
Thermal grease
copyright Vincotech
t p (s)
tp/T
IGBT thermal model values
Thermal grease
Tau (s)
0,9339
0,09693
0,03256
0,004783
0,000845
100
Tau (s)
2,278
0,2352
0,05952
0,01208
0,00294
0,000584
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
PFC
Figure 13
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
PFC IGBT
Figure 14
Collector current as a
function of heatsink temperature
I C = f(T h)
PFC IGBT
16
IC (A)
Ptot (W)
40
30
12
20
8
10
4
0
0
0
At
Tj =
50
175
100
150
T h ( o C)
0
200
At
Tj =
U CC =
ºC
Figure 15
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
PFC FWD
50
175
15
100
150
200
ºC
V
Figure 16
Forward current as a
function of heatsink temperature
I F = f(T h)
PFC FWD
16
Ptot (W)
IF (A)
30
T h ( o C)
25
12
20
15
8
10
4
5
0
0
0
At
Tj =
50
175
copyright Vincotech
100
150
T h ( o C)
200
0
At
Tj =
ºC
20
50
175
100
150
T h ( o C)
200
ºC
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
PFC
Figure 17
Safe operating area as a function
of collector-emitter voltage
I D = f(V DS)
PFC IGBT
ID (A)
102
10uS
100uS
1mS
10mS
100mS
DC
101
100
10-1
100
At
D =
Th =
U CC =
Tj =
101
10
2
V DS (V)
10
3
single pulse
80
ºC
15
V
T jmax
ºC
Figure 18
Reverse bias safe operating area
PFC IGBT
I C = f(V CE)
IC (A)
35
30
IC MAX
20
Ic
Ic CHIP
MODULE
25
15
VCE MAX
10
5
0
0
100
200
300
400
500
600
700
V CE (V)
At
Tj =
T jmax-25
copyright Vincotech
ºC
21
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Input Rectifier Bridge
Figure 1
Typical diode forward current as
a function of forward voltage
I F= f(V F)
Rectifier diode
Figure 2
Diode transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
Rectifier diode
101
IF (A)
ZthJC (K/W)
25
20
100
15
10
Tj = Tjmax-25°C
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
5
Tj = 25°C
0
0,0
0,5
1,0
1,5
V F (V)
2,0
10
-2
t p (s)
10-5
At
tp =
250
10-4
At
D =
R thJH =
µs
Figure 3
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
Rectifier diode
10-3
10-2
10-1
10110
tp/T
3,54
K/W
Figure 4
Forward current as a
function of heatsink temperature
I F = f(T h)
Rectifier diode
20
Ptot (W)
IF (A)
50
100
40
16
30
12
20
8
10
4
0
0
0
At
Tj =
30
150
copyright Vincotech
60
90
120
T h ( o C)
0
150
At
Tj =
ºC
22
30
150
60
90
120
T h ( o C)
150
ºC
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Shunt
PFC Shunt
PLOW (W)
103
Figure 2
Pulse Power R2
DC Shunt
103
Single
Repetitive
PLOW (W)
Figure 1
Pulse Power R1
Single
Repetitive
102
102
101
101
100
0
10
-1
10
0
1
10
2
10
3
10
4
10
10
t pulse (ms)
10-1
dR /R 0 < 1% after 1 pulse
dR /R 0 < 1% after 10.000 cycles; duty cycle< 0,1%
100
101
102
103
104
t pulse (ms)
dR /R 0 < 1% after 1 pulse
dR /R 0 < 1% after 10.000 cycles; duty cycle< 0,1%
Thermistor
Figure 1
Typical NTC characteristic
as a function of temperature
R T = f(T )
Thermistor
NTC-typical temperature characteristic
R (Ω)
24000
20000
16000
12000
8000
4000
0
25
45
copyright Vincotech
65
85
105
T (°C)
125
23
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Switching Definitions Output Inverter
General conditions
Tj
= 125 °C
Figure 1
Output inverter IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
(t E off = integrating time for E off)
Figure 2
Output inverter IGBT
Turn-on Switching Waveforms & definition of t don, t Eon
(t E on = integrating time for E on)
125
200
tdoff
%
VCE
UIN
150
VCE 90%
UIN 90%
IC
%
100
75
100
IC
VCE
UIN
50
tdon
tEoff
50
25
UIN 10%
IC 10%
0
0
VCE 3%
tEon
IC 1%
-25
-0,2
-50
0
0,2
0,4
0,6
0,8
1
1,2
2,8
3
3,2
3,4
3,6
3,8
UIN (0%) =
UIN (100%) =
V C (100%) =
I C (100%) =
t doff =
t E off =
0
5
400
4
0,75
0,95
4
4,2
time(us)
time (us)
V
V
V
A
µs
µs
UIN (0%) =
UIN (100%) =
V C (100%) =
I C (100%) =
t don =
t E on =
Figure 3
Output inverter IGBT
Turn-off Switching Waveforms & definition of t f
0
5
400
4
0,64
0,82
V
V
V
A
µs
µs
Figure 4
Output inverter IGBT
Turn-on Switching Waveforms & definition of t r
120
200
fitted
%
VCE
IC
%
100
150
IC 90%
80
VCE
100
60
IC
IC 60%
90%
tr
40
IC 40%
50
20
Ic
IC 10%
0
IC10%
0
tf
-20
0,6
0,7
V C (100%) =
I C (100%) =
tf =
copyright Vincotech
-50
0,8
400
4
0,05
0,9
time (us)
3,6
1
3,65
3,7
3,75
3,8
time(us)
V
A
µs
V C (100%) =
I C (100%) =
tr =
24
400
4
0,03
V
A
µs
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Turn-off Switching Waveforms & definition of t Eoff
Figure 6
Output inverter IGBT
Turn-on Switching Waveforms & definition of t Eon
120
200
IC 1%
%
Poff
100
%
Eoff
Pon
150
80
Eon
100
60
40
50
20
VCE 3%
UIN 10%
UIN 90%
0
tEon
0
tEoff
-20
-0,2
-50
0
0,2
0,4
0,6
0,8
1
1,2
2,8
3
3,2
3,4
3,6
3,8
time (us)
P off (100%) =
E off (100%) =
t E off =
1,61
0,12
0,95
4
4,2
time(us)
kW
mJ
µs
P on (100%) =
E on (100%) =
t E on =
1,61
0,20
0,82
kW
mJ
µs
Figure 7
Output inverter FWD
Turn-off Switching Waveforms & definition of t rr
120
Id
%
80
trr
40
fitted
0
Vd
IRRM 10%
-40
IRRM 90%
IRRM 100%
-80
-120
3,6
V d (100%) =
I d (100%) =
I RRM (100%) =
t rr =
copyright Vincotech
25
3,7
3,8
400
4
-3
0,25
3,9
time(us)
4
V
A
A
µs
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Switching Definitions Output Inverter
Figure 8
Output inverter FWD
Turn-on Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
Figure 9
Output inverter FWD
Turn-on Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec)
150
120
%
%
Id
100
Erec
100
Qrr
80
tErec
tQrr
50
60
40
0
20
-50
Prec
0
-100
-20
3,6
3,8
4
4,2
4,4
3,6
3,8
4
I d (100%) =
Q rr (100%) =
t Q rr =
copyright Vincotech
4
0,35
0,55
4,2
4,4
time(us)
time(us)
A
µC
µs
P rec (100%) =
E rec (100%) =
t E rec =
26
1,61
0,09
0,55
kW
mJ
µs
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Switching Definitions PFC
General conditions
Tj
= 125 °C
Figure 1
PFC IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
(t E off = integrating time for E off)
Figure 2
PFC IGBT
Turn-on Switching Waveforms & definition of t don, t Eon
(t E on = integrating time for E on)
125
500
%
tdoff
%
100
400
VCE 90%
UGATE 90%
IC
75
300
UGATE
IC
50
tEoff
200
UGATE
25
VCE
IC 1%
VCE
100
tdon
0
IC 10%
UGATE 10%
0
-25
tEon
-50
-0,1
0
U GATE (0%) =
U GATE (100%) =
V C (100%) =
I C (100%) =
t doff =
t E off =
0,1
0
15
400
4
0,16
0,20
time (us)
-100
2,97
0,2
3
3,03
3,06
3,09
time(us)
V
V
V
A
µs
µs
U GATE (0%) =
U GATE (100%) =
V C (100%) =
I C (100%) =
t don =
t E on =
Figure 3
Turn-off Switching Waveforms & definition of t f
VCE3%
PFC IGBT
0
15
400
4
0,02
0,05
V
V
V
A
µs
µs
Figure 4
Turn-on Switching Waveforms & definition of t r
120
PFC IGBT
200
fitted
%
%
IC
100
150
Ic 90%
Ic
80
Ic 60%
100
60
VCE
IC 90%
tr
Ic 40%
40
50
20
Ic10%
IC 10%
VCE
0
0
tf
-50
3,01
-20
0
0,03
0,06
0,09
0,12
0,15
3,02
3,03
time (us)
V C (100%) =
I C (100%) =
tf =
copyright Vincotech
400
4
0,00
3,04
time(us)
V
A
µs
V C (100%) =
I C (100%) =
tr =
27
400
4
0,002
V
A
µs
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Switching Definitions PFC
Figure 5
PFC IGBT
Turn-off Switching Waveforms & definition of t Eoff
Figure 6
PFC IGBT
Turn-on Switching Waveforms & definition of t Eon
120
%
Eoff
350
%
Ic 1%
Pon
300
100
250
80
200
60
150
Eon
40
100
20
50
U GATE 90%
Poff
0
Uce 3%
U GATE 10%
0
tEoff
tEon
-20
-0,1
P off (100%) =
E off (100%) =
t E off =
-50
0
1,59
0,04
0,20
0,1
time (us)
0,2
3
kW
mJ
µs
3,02
P on (100%) =
E on (100%) =
t E on =
3,04
1,5892
0,09
0,0505
3,06
time(us)
3,08
kW
mJ
µs
Figure 7
PFC FWD
Turn-off Switching Waveforms & definition of t rr
150
%
100
Id
trr
50
0
Ud
IRRM 10%
-50
-100
fitted
-150
-200
-250
IRRM 90%
-300
IRRM 100%
-350
3,01
3,02
3,03
3,04
3,05
3,06
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
t rr =
copyright Vincotech
28
400
4
-13
0,03
V
A
A
µs
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Switching Definitions PFC
Figure 8
PFC FWD
Turn-on Switching Waveforms & definition of t Qrr
Figure 9
PFC FWD
Turn-on Switching Waveforms & definition of t Erec
(tQrr= integrating time for Qrr)
(tErec= integrating time for Erec)
200
125
%
%
Id
Erec
100
Qrr
100
tQint
tErec
75
0
50
Prec
25
-100
0
-200
-25
-300
3,02
3,04
I d (100%) =
Q rr (100%) =
t Qint =
copyright Vincotech
3,06
4
0,24
0,06
3,08
time(us)
-50
3,02
3,1
A
µC
µs
P rec (100%) =
E rec (100%) =
t E rec =
29
3,04
3,06
1,59
0,03
0,06
3,08
time(us)
3,1
kW
mJ
µs
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
without thermal paste, solder pins
with thermal paste, solder pins
without thermal paste, press fit pins
with thermal paste, press fit pins
20-1B06IPB004RC01-P952A45
20-1B06IPB004RC01-P952A45-/3/
20-PB06IPB004RC01-P952A45Y
20-PB06IPB004RC01-P952A45Y-/3/
P952A45
P952A45
P952A45Y
P952A45Y
P952A45
P952A45-/3/
P952A45Y
P952A45Y-/3/
Outline
Pin
Pin table
X
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
45
42
39
36
33
30
27
24
21
18
15
12
9
6
3
0
-0,2
4,8
9,8
14,8
19,8
22,5
25,2
30,2
35,2
40,2
45,2
Y
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
Pinout
copyright Vincotech
30
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
Application data
Static logic funtion table
VCC
VBS
RCIN
ITRIP
ENABLE
FAULT
LO1,2,3
HO1,2,3
<VCCUV–
X
X
X
X
0
0
0
15V
<VBSUV–
X
0
3.3V
15V
15V
<3.2V↓
0
3.3V
0
0
0
15V
15V
X
> VIT,TH+
3.3V
0
0
0
15V
15V
> VRCIN,TH
0
3.3V
15V
15V
> VRCIN,TH
0
0
High imp /LIN1,2,3
0
High imp /LIN1,2,3 /HIN1,2,3
High imp
0
0
Pin Descriptions
Pin #
Pin Name
1
2
NTC2
NTC1
InvS +
InvS -
Temperature sensor connector 1
Temperature sensor connector 2
Inverter sense resistor high-side
Inverter sense resistor low-side
EN
¬Fault
¬LIN3
Enable I/O functionality
Fault output, indicates over current or under voltage (negative logic, open-drain output)
3
4
5
6
7
Pin Description
Signal input for low-side W phase
Signal input for low-side V phase
Signal input for low-side U phase
8
9
¬LIN2
¬LIN1
10
11
¬HIN3
¬HIN2
12
13
¬HIN1
VCC
Signal
Signal
Signal
Driver
14
GND2
Inverter ground
15
16
17
18
VSENSE
FREQ
AC1
AC2
19
20
21
22
23
24
25
26
27
DC1 + (coil)
PFC + (coil)
DC1 PFC DC2 DC2 +
W
V
U
copyright Vincotech
input for high-side W phase
input for high-side V phase
input for high-side U phase
circuit supply voltage
PFC Bulk voltage sense
PFC Switching frequency adjust
Rectifier input
Rectifier input
Rectifier output DC +
PFC coil connector
Rectifier output DC PFC return
Inverter input DC Inverter input DC +
Output for W phase
Output for V phase
Output for U phase
31
19 Jun. 2015 / Revision 1
20-1B06IPB004RC01-P952A45
20-PB06IPB004RC01-P952A45Y
datasheet
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are
presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete
and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any
changes without further notice to any products to improve reliability, function or design. No representation, guarantee
or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application
or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or
that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and
determine the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the
express written approval of Vincotech.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use
provided in labelling can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
32
19 Jun. 2015 / Revision 1