10-0B06PPA010RC-L025A09 datasheet flow PIM 0B + PFC 600 V / 10 A Features flow 0 B housing ● Converter, PFC, inverter in one housing ● New high speed IGBT for PFC ● One screw heatsink mounting Target applications Schematic ● Embedded drives Types ● 10-0B06PPA010RC-L025A09 Maximum Ratings Tj=25°C, unless otherwise specified Inverter Switch Copyright Vincotech 1 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet PFC Switch PFC Diode PFC Switch Protection Diode Rectifier Diode Copyright Vincotech 2 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Characteristic Values Inverter Switch Copyright Vincotech 3 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet PFC Switch Copyright Vincotech 4 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet PFC Diode PFC Protection Diode Copyright Vincotech 5 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Rectifier Diode Thermistor Module Properties Copyright Vincotech 6 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Inverter Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) I C = f(V CE) 35 IC (A) 45 IC(A) IGBT 40 30 35 25 30 20 25 20 15 15 10 10 5 5 0 0 0 1 2 3 4 0 5 0,5 1 1,5 2 2,5 3 3,5 4 4,5 tp = 250 µs V GE= 15 V T j: 25 °C tp = 250 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V Typical transfer characteristics 5 VCE (V) VCE (V) IGBT µs °C Transient thermal impedance as a function of pulse width I C = f(V CE) IGBT Z thJH = f(t p) 10 ZthJH (K/W) IC (A) 10 8 1 6 4 0.5 0,1 0.2 0.1 0.05 2 0.02 0.01 0.005 0 0,01 1,00E-04 0 0 2 4 6 8 10 12 1,00E-03 1,00E-02 1,00E-01 tp = 100 µs V CE = 10 V T j: 1,00E+00 1,00E+01 1,00E+02 tp(s) VCE (V) 25 °C D = tp / T 125 °C R thJH = 2,15 K/W 150 °C IGBT thermal model values Copyright Vincotech 7 R (K/W) Tau (s) 7,60E-02 2,82E+00 1,59E-01 4,19E-01 1,01E+00 6,63E-02 6,48E-01 2,63E-02 2,57E-01 3,72E-03 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Inverter Switch Characteristics Gate voltage vs Gate charge IGBT V GE = f(Q g) VGE (V) 16 480V 14 120V 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 Qg (nC) At I C= 10 A IGBT Short circuit withstand time as a function of VGE t sc = f(V GE) I SC = f(V GE) 160 IC (sc) 10 tsc (µS) IGBT Typical short circuit collector current as a function of VGE 9 140 8 120 7 100 6 80 5 4 60 3 40 2 20 1 0 0 12 13 14 15 16 12 17 13 14 15 VGE(V) 17 18 19 20 VGE(V) At V CE = 400 V At V CE ≤ 400 V Tj ≤ 150 ºC Tj ≤ 25 ºC Copyright Vincotech 16 8 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet PFC Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 90 I C (A) I C (A) 90 75 75 60 60 45 45 30 30 15 15 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs 25 °C tp = 250 V GE= 15 V 125 °C Tj = 125 150 °C V GE from 7 V to 17 V in steps of 1 V T j: Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 30 Z t h(j h(j--s)(K/W) I C (A) 101 25 100 20 15 0,5 10-1 10 0,2 0,1 0,05 0,02 5 0,01 0,005 0 10-2 10-4 0 0 2 4 6 8 10-3 10-2 V G E (V) tp = 100 µs 25 °C D= tp / T V CE = 10 V 125 °C R th(j-s) = 1,74 T j: Copyright Vincotech 150 °C 10-1 10 101 t p (s) 102 K/W IGBT thermal model values R th (K/W) 9 1,29E-01 τ (s) 5,83E-01 7,29E-01 6,38E-02 6,55E-01 2,28E-02 1,29E-01 2,24E-03 9,92E-02 3,38E-04 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet PFC Switch Characteristics Gate voltage vs Gate charge IGBT V GE = f(Q G) V G E (V) 15 130V 12,5 520V 10 7,5 5 2,5 0 0 10 20 30 40 50 60 70 80 Q G (nC) At 30 I C= A PFC Diode Characteristics FWD Typical forward characteristics Z th(j-s) = f(t p) 90 100 Z t h( jj--s) (K/W) IF (A) I F = f(V F) FWD Transient thermal impedance as a function of pulse width 75 60 10-1 45 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 30 15 0 10-2 0 1 2 3 4 5 10-4 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 1032 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 2,09 K/W 150 °C FWD thermal model values Copyright Vincotech 10 R (K/W) 4,06E-02 τ (s) 7,59E+00 1,41E-01 7,59E-01 6,53E-01 8,62E-02 8,80E-01 2,66E-02 2,25E-01 4,54E-03 1,55E-01 5,55E-04 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet PFC Protection Diode characteristics FWD Typical forward characteristics Z th(j-s) = f(t p) 18 101 Z t h(j h(j--s) (K/W) IF (A) I F = f(V F) FWD Transient thermal impedance as a function of pulse width 15 100 12 9 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 6 3 0 10-2 0 0,5 1 1,5 2 2,5 3 10-5 10-4 10-3 VF (V) tp = 250 µs 10-2 10-1 100 101 t p (s) 25 °C T j: 125 °C D = tp / T 150 °C R th(j-s) = 3,01 K/W FWD thermal model values Copyright Vincotech 11 R (K/W) 5,15E-02 τ (s) 9,38E+00 9,53E-02 8,91E-01 3,22E-01 1,25E-01 1,35E+00 2,97E-02 8,32E-01 8,19E-03 3,58E-01 1,78E-03 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Rectifier characteristics Typical f orward charact erist ics Rect if ier Diode Rectif ier Diode Z th(j-s) = f(t p) 21 101 Z t h(j h(j--s) (K/W) IF (A) I F = f(V F) Transient t hermal impedance as a f unct ion of pulse widt h 18 15 100 12 9 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 6 3 10-2 0 0 0,5 1 1,5 2 2,5 10-4 3 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D = tp / T 125 °C R th(j-s) = 2,09 K/W 150 °C Diode thermal model values R (K/W) 4,86E-02 1,03E+01 1,45E-01 6,91E-01 τ (s) 1,18E+00 6,09E-02 5,40E-01 1,88E-02 1,74E-01 1,96E-03 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 12 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Inverter Switching Definitions Figure 1. IGBT Figure 2. IGBT Typical switching energy losses as a function of gate resistor E = f(I C) E = f(R G ) 0,8 0,8 E (mWs) E (mWs) Typical switching energy losses as a function of collector current Eon 0,6 Eon 0,6 Eon Eon 0,4 0,4 Eoff Eoff Eoff Eoff 0,2 0,2 0 0 0 5 10 15 20 0 I C(A) 25 °C With an inductive load at 400 V V CE = V GE = ±15 V R gon = 32 Ω R goff = 32 Ω T j: 32 64 96 With an inductive load at 125 °C V CE = 400 V 150 °C V GE = ±15 V 10 A IC = Figure 3. FWD 128 RG (Ω ) T j: 125 °C 150 °C Figure 4. FWD Typical reverse recovery energy loss as a function of gate resistor E rec = f(I c) E rec = f(R G ) E (mWs) E (mWs) Typical reverse recovery energy loss as a function of collector current 0,4 Erec 160 25 °C 0,4 0,3 0,3 0,2 0,2 Erec Erec Erec 0,1 0,1 0 0 0 5 10 15 0 20 32 64 96 128 IC (A) With an inductive load at 25 °C V CE = 400 V V GE = ±15 V R gon = 32 Ω Copyright Vincotech T j: With an inductive load at 125 °C V CE= 400 V 150 °C V GE= ±15 V 10 A I C= 13 RG(Ω ) 160 25 °C T j: 125 °C 150 °C 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Inverter Switching Definitions Figure 5. IGBT Figure 6. IGBT Typical switching times as a function of collector current Typical switching times as a function of gate resistor t = f(I C) t = f(R G ) 1 t (μs) t (μs) 1 tdon tdoff 0,1 tdoff 0,1 tdon tr tr tf tf 0,01 0,01 0,001 0,001 0 5 10 15 0 20 32 64 96 128 RG(Ω) RG(Ω) With an inductive load at With an inductive load at Tj = 125 °C Tj = 125 °C V CE = 400 V V CE = 400 V ±15 V 10 A V GE = ±15 V V GE = R gon = 32 Ω IC = R goff = 32 Ω Figure 7. FWD Figure 8. FWD Typical reverse recovery time as a function of collector current Typical reverse recovery time as a function of IGBT turn on gate resistor t rr = f(I C ) t rr = f(R gon) 0,32 0,4 t rr(μs) t rr(μs) 160 trr 0,24 trr 0,3 trr trr 0,16 0,2 0,08 0,1 0 0 0 5 10 15 20 0 32 64 96 128 I C (A) At V CE= 400 V V GE = ±15 V R gon = 32 Ω Copyright Vincotech T j: 160 RGon(Ω) 25 °C At V CE= 125 °C V GE = 150 °C I C= 14 400 V ±15 V 10 A 25 °C T j: 125 °C 150 °C 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Inverter Switching Definitions Figure 9. FWD Figure 10. FWD Typical reverse recovery charge as a function of collector current Typical reverse recovery charge as a function of IGBT turn on gate resistor Q rr = f(I C) Q rr = f(R gon) 1,6 Q rr (µ µ C) Q rr (µC) 1,2 Qrr 1,2 0,9 0,8 Qrr 0,6 Qrr Qrr 0,4 At 0,3 0 0 0 5 10 15 20 0 32 64 96 128 160 RGon(Ω) I C (A) At 400 V V GE = V CE= ±15 V R gon = 32 Ω 25 °C T j: At V CE= 125 °C V GE = 150 °C I C= Figure 11. FWD 400 V ±15 V 10 A 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical reverse recovery current as a function of IGBT turn on gate resistor I RRM = f(I C) I RRM = f(R gon) 12 I rrM (A) I rrM (A) Typical reverse recovery current as a function of collector current IRRM 20 15 9 IRRM 6 10 3 5 IRRM IRRM 0 0 0 5 10 15 0 20 32 64 96 128 I C (A) At V CE= 400 V V GE = ±15 V R gon = 32 Ω Copyright Vincotech 25 °C T j: At V CE= 125 °C V GE = 150 °C I C= 15 400 V ±15 V 10 A 160 RGo n(Ω) 25 °C T j: 125 °C 150 °C 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Inverter Switching Definitions Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of dI 0/dt ,dI rec/dt = f(I c) IGBT t urn on gate resist or 600 direc / dt (A/µ µ s) di rec / dt (A/µs) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current dI0/dt dIrec/dt 2000 dI0/dt dIrec/dt 450 1500 300 1000 150 500 0 0 0 5 10 15 0 20 32 64 At V CE= 400 V V GE = ±15 V At V GE = R gon = 32 Ω I C= Figure 15. 96 128 160 RGon(Ω) I C (A) V CE= 400 V ±15 V 10 A IGBT Reverse bias safe operating area I C = f(V CE) I C (A) 25 IC MAX Ic CHIP 20 MODULE 15 Ic 10 VCE MAX 5 0 0 100 200 300 400 500 600 700 VCE(V) At 175 °C R gon = Tj = 32 Ω R goff = 32 Ω Copyright Vincotech 16 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Inverter Switching Definitions General conditions Tj = 125 °C R gon R goff = = 32 Ω 32 Ω Figure 1. IGBT Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for E off) Figure 2. IGBT Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for E on) 125 200 tdoff % IC % VCE 100 VGE 90% 150 VCE 90% 75 VGE 100 IC 50 tEoff VGE tdon VCE 50 25 IC 1% VGE 10% VCE 3% IC 10% 0 0 tEon -25 -0,2 -0,1 0 0,1 0,2 -50 2,85 0,3 2,93 3,01 3,09 3,17 time (us) V GE (0%) = -15 V V GE (0%) = -15 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 400 V V C (100%) = 400 V I C (100%) = 10 A I C (100%) = 10 A t doff = 0,105 µs t don = 0,071 µs t Eoff = Figure 3. 0,292 µs t E on = Figure 4. 0,215 µs IGBT Turn-off Switching Waveforms & definition of tf 3,25 IGBT Turn-on Switching Waveforms & definition of tr 200 125 % time(us) % fitted IC IC VCE 100 150 IC 90% VCE 75 100 IC 60% 50 IC 90% tr IC 40% 50 25 IC 10% IC10% 0 0 -25 -0,05 tf -50 0 0,05 0,1 0,15 3 3,05 3,1 time (us) 3,2 time(us) V C (100%) = 400 V V C (100%) = 400 V I C (100%) = 10 A I C (100%) = 10 A tf = 0,035 µs tr = 0,022 µs Copyright Vincotech 3,15 17 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Inverter Switching Definitions Figure 5. IGBT Turn-off Switching Waveforms & definition of tEof f Figure 6. IGBT Turn-on Switching Waveforms & definition of tEon 125 200 % IC 1% Poff 100 Pon % Eoff 150 75 Eon 100 50 50 25 VGE 90% VCE 3% VGE 10% 0 0 tEoff tEon -50 -25 -0,2 -0,1 0 0,1 0,2 2,9 0,3 2,95 3 3,05 3,1 P off (100%) = 4,00 kW P on (100%) = 4,00 E off (100%) = 0,18 mJ E on (100%) = 0,36 mJ t E off = 0,29 µs t E on = 0,21 µs Figure 7. 3,15 3,2 3,25 time(us) time (us) kW FWD Turn-off Switching Waveforms & definition of trr 150 Id % 100 trr 50 Vd 0 IRRM 10% fitted -50 IRRM 90% IRRM 100% -100 -150 3 3,05 3,1 3,15 3,2 3,25 3,3 3,35 3,4 time(us) V d (100%) = 400 V I d (100%) = 10 A I RRM (100%) = -10 A t rr = 0,233 µs Copyright Vincotech 18 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Inverter Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for E rec) 125 150 % % Erec Qrr Id 100 100 tErec 75 tQrr 50 50 0 25 Prec -50 0 -100 2,9 3,1 3,3 3,5 3,7 3,9 4,1 -25 4,3 2,9 3,1 3,3 3,5 3,7 time(us) 4,1 4,3 time(us) I d (100%) = 10 A P rec (100%) = 4,00 Q rr (100%) = 0,89 µC E rec (100%) = 0,24 mJ t Q rr = 1,00 µs t E rec = 1,00 µs Copyright Vincotech 3,9 19 kW 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet PFC Switching Definitions Figure 1. IGBT Figure 2. IGBT Typical switching energy losses as a function of gate resistor E = f(I C) E = f(R G ) 0,6 0,8 E (mWs) E (mWs) Typical switching energy losses as a function of collector current Eon 0,6 Eon 0,45 Eon Eon 0,4 0,3 0,2 0,15 Eoff Eoff Eoff Eoff 0 0 0 5 10 15 20 0 I C(A) 25 °C With an inductive load at 400 V V CE = V GE = 15/0 V R gon = 16 Ω R goff = 16 Ω T j: 16 32 48 With an inductive load at 125 °C V CE = 400 V 150 °C V GE = 15/0 V 10 A IC = Figure 3. FWD 64 RG (Ω ) T j: 125 °C 150 °C Figure 4. FWD Typical reverse recovery energy loss as a function of gate resistor E rec = f(I c) E rec = f(R G ) E (mWs) E (mWs) Typical reverse recovery energy loss as a function of collector current 0,28 80 25 °C 0,2 Erec 0,15 0,21 Erec 0,1 0,14 Erec Erec 0,05 0,07 0 0 0 5 10 15 0 20 16 32 48 64 IC (A) With an inductive load at 25 °C V CE = 400 V V GE = 15/0 V R gon = 16 Ω Copyright Vincotech T j: With an inductive load at 125 °C V CE= 400 V 150 °C V GE= 15/0 V 10 A I C= 20 RG(Ω ) 80 25 °C T j: 125 °C 150 °C 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet PFC Switching Definitions Figure 5. IGBT Figure 6. IGBT Typical switching times as a function of collector current Typical switching times as a function of gate resistor t = f(I C) t = f(R G ) t (μs) 1 t (μs) 1 tdoff tdoff 0,1 0,1 tdon tr tdon tr 0,01 0,01 tf tf 0,001 0,001 0 5 10 15 0 20 16 32 48 64 With an inductive load at With an inductive load at Tj = 125 °C Tj = 125 °C V CE = 400 V V CE = 400 V 15/0 V 10 A V GE = 15/0 V V GE = R gon = 16 Ω IC = R goff = 16 Ω Figure 7. FWD Figure 8. FWD Typical reverse recovery time as a function of collector current Typical reverse recovery time as a function of IGBT turn on gate resistor t rr = f(I C ) t rr = f(R gon) 0,1 0,1 t rr(μs) t rr(μs) 80 RG(Ω) I C(A) trr trr 0,075 0,075 trr 0,05 0,05 0,025 0,025 0 trr 0 0 5 10 15 20 0 16 32 48 64 I C (A) At V CE= 400 V V GE = 15/0 V R gon = 16 Ω Copyright Vincotech T j: 80 RGon(Ω) 25 °C At V CE= 125 °C V GE = 150 °C I C= 21 400 V 15/0 V 10 A 25 °C T j: 125 °C 150 °C 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet PFC Switching Definitions Figure 9. FWD Figure 10. FWD Typical reverse recovery charge as a function of collector current Typical reverse recovery charge as a function of IGBT turn on gate resistor Q rr = f(I C) Q rr = f(R gon) 1,6 Q rr (µ µ C) Q rr (µC) 1,2 Qrr 1,2 0,9 0,8 Qrr 0,6 Qrr Qrr 0,4 At 0,3 0 0 0 5 10 15 20 0 16 32 48 64 80 RGon(Ω) I C (A) At 400 V V GE = V CE= 15/0 V R gon = 16 Ω 25 °C T j: At V CE= 125 °C V GE = 150 °C I C= Figure 11. FWD 400 V 15/0 V 10 A 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical reverse recovery current as a function of IGBT turn on gate resistor I RRM = f(I C) I RRM = f(R gon) 25 I rrM (A) I rrM (A) Typical reverse recovery current as a function of collector current IRRM 20 30 24 IRRM 18 IRRM 10 12 IRRM 5 6 15 0 0 0 5 10 15 0 20 16 32 48 64 At 400 V V GE = V CE= 15/0 V R gon = 16 Ω Copyright Vincotech 25 °C T j: 80 RGo n(Ω) I C (A) At V CE= 125 °C V GE = 150 °C I C= 22 400 V 15/0 V 10 A 25 °C T j: 125 °C 150 °C 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet PFC Switching Definitions Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of dI 0/dt ,dI rec/dt = f(I c) IGBT t urn on gate resist or 4000 direc / dt (A/µ µ s) di rec / dt (A/µs) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current dI0/dt dIrec/dt 6000 dI0/dt dIrec/dt 3000 4500 2000 3000 1000 1500 0 0 0 5 10 15 0 20 16 32 At V CE= 400 V At V CE= V GE = 15/0 V V GE = R gon = 16 Ω I C= Figure 15. 48 64 80 RGon(Ω) I C (A) 400 V 15/0 V 10 A IGBT Reverse bias safe operating area I C = f(V CE) I C (A) 25 IC MAX Ic CHIP 20 MODULE 15 Ic 10 VCE MAX 5 0 0 100 200 300 400 500 600 700 VCE(V) At 175 °C R gon = Tj = 16 Ω R goff = 16 Ω Copyright Vincotech 23 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet PFC Switching Definitions General conditions Tj = 125 °C R gon R goff = = 16 Ω 16 Ω Figure 1. IGBT Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for E off) Figure 2. IGBT Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for E on) 125 350 tdoff % IC % VCE 300 100 VGE 90% VCE 90% 250 75 VGE 200 IC 50 150 tEoff VCE 100 25 tdon IC 1% 0 VGE 10% 0 -25 -0,2 -0,1 0 0,1 VGE 50 0,2 IC 10% VCE 3% tEon -50 0,3 2,9 2,95 3 3,05 3,1 3,15 time(us) time (us) V GE (0%) = 0 V V GE (0%) = 0 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 400 V V C (100%) = 400 V I C (100%) = 10 A I C (100%) = 10 A t doff = 0,189 µs t don = 0,019 µs t E off = Figure 3. 0,230 µs t E on = Figure 4. 0,090 µs IGBT Turn-off Switching Waveforms & definition of tf IGBT Turn-on Switching Waveforms & definition of tr 350 125 % 3,2 % fitted IC VCE IC 300 100 IC 90% 250 75 200 IC 60% 50 150 VCE IC 40% 100 tr 25 IC10% IC 90% 50 0 IC 10% 0 tf -25 0,05 0,1 0,15 0,2 -50 2,95 0,25 3 3,05 time (us) 3,15 time(us) V C (100%) = 400 V V C (100%) = 400 V I C (100%) = 10 A I C (100%) = 10 A tf = 0,004 µs tr = 0,007 µs Copyright Vincotech 3,1 24 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet PFC Switching Definitions Figure 5. IGBT Turn-off Switching Waveforms & definition of tEof f Figure 6. IGBT Turn-on Switching Waveforms & definition of tEon 125 250 % IC 1% 100 % Pon Eoff 200 75 150 50 100 Eon 25 50 VGE 90% VCE 3% VGE 10% Poff 0 0 tEoff -25 -0,1 0 tEon 0,1 0,2 -50 2,95 0,3 3 3,05 P off (100%) = 3,99 kW P on (100%) = 3,99 E off (100%) = 0,09 mJ E on (100%) = 0,38 mJ t E off = 0,23 µs t E on = 0,09 µs Figure 7. 3,1 3,15 time(us) time (us) kW FWD Turn-off Switching Waveforms & definition of trr 150 Id % 100 trr 50 0 -50 Vd IRRM 10% -100 fitted -150 IRRM 90% -200 IRRM 100% -250 2,95 3 3,05 3,1 3,15 time(us) V d (100%) = 400 V I d (100%) = 10 A I RRM (100%) = -22 A t rr = 0,066 µs Copyright Vincotech 25 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet PFC Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for E rec) 150 150 Qrr Id % % 100 125 Erec tQrr 50 100 0 tErec 75 -50 50 -100 25 -150 Prec 0 -200 -250 2,9 3 3,1 3,2 -25 3,3 2,9 3 3,1 3,2 time(us) I d (100%) = 10 A P rec (100%) = 3,99 Q rr (100%) = 0,93 µC E rec (100%) = 0,17 mJ t Q rr = 0,13 µs t E rec = 0,13 µs 125°C Copyright Vincotech 3,3 time(us) kW 25 25 ooCC 25°C 26 125 125 ooCC 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Ordering Code & Marking Version without thermal paste 17mm housing NN-NNNNNNNNNNNNNN TTTTTTT WWYY UL Vinco LLLLL SSSS Ordering Code 10-0B06PPA010RC-L025A09 Text Datamatrix in DataMatrix as L025A09 in packaging barcode as L025A09 Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTT WWYY UL Vinco LLLLL SSSS Serial Date code SSSS WWYY Type TTTT-TTT Lot number LLLLL Outline Pin table [mm] Pin X Y Func tion 1 24,7 0 DC-Rec t 2 21,7 0 DC-PFC 3 18,7 0 G27 4 15 0 DC-3 5 12 0 G15 6 9 0 DC-2 7 6 0 G13 8 3 0 DC-1 9 0 0 G11 10 0 3 Therm2 11 12 0 0 5,8 10,8 Therm1 G12 13 0 13,8 Ph1 14 5,7 13,8 G14 15 8,7 13,8 Ph2 16 14,4 13,8 Ph3 17 14,4 10,8 G16 18 19,7 9,3 DC+ 19 22,9 13,8 PFC 20 27,9 13,8 ACIn1 21 27,9 6,95 ACIn2 22 23,05 6,95 DC+Rect Copyright Vincotech 27 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Pinout Identification ID Component Voltage Technology Current Function T11-T16 IGBT 600V 10A Inverter switch T27 IGBT 650V 30A PFC Switch D27 FWD 650V 30A PFC Diode D47 Diode 650V 6A PFC Switch Protection Diode D31-D34 Diode 1600V 7A Rectifier Diode Rt NTC - - Thermistor Copyright Vincotech 28 Comment 04 Jun. 2015 / Revision 2 10-0B06PPA010RC-L025A09 datasheet Packaging instruction Standard packaging quantity (SPQ) 200 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 0 B packages see vincotech.com website. Document No.: Date: Modification: Pages 10-0B06PPA010RC-L025A09-D2-14 04 Jun. 2015 3D drawing, Outline Pin-table (Pin 16 - 17) 1, 27 DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 29 04 Jun. 2015 / Revision 2