10-FZ07B2A030SM02-M575L48 datasheet flowBOOST 0 650 V / 30 A Features ● ● ● ● flow 0 12mm housing High efficient dual booster Included capacitor Very high switching frequency Very compact design Schematic Target applications ● Solar Inverter Types ● 10-FZ07B2A030SM02-M575L48 Maximum Ratings Tj=25°C, unless otherwise specified TParameter j= Condition Symbol Value Unit 650 V 28 A 90 A 57 W Boost Switch Collector-emitter voltage Collector current V CES IC T j=T jmax T S=80°C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j=T jmax Gate-emitter voltage V GES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T S=80°C 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Parameter Conditions Symbol Value Unit 650 V 29 A 180 A 52 W 175 °C Value Unit 650 V 30 A 150 A 58 W 175 °C Boost Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current IFRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j=T jmax T h =80°C T j=T jmax T h=80°C Conditions Symbol Boost Inverse Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF T j=T jmax T h =80°C Surge (non-repetitive) forward current I FSM 50Hz Single Half Sine Wave Total power dissipation P tot T j=T jmax Maximum Junction Temperature T jmax Parameter T h=80°C Conditions Value Unit V MAX 1000 V T op -55…+125 °C Value Unit Symbol DC Link Capacitor Maximum DC voltage Operation Temperature Module Properties Parameter Conditions Symbol Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V min 12,7 mm 9,22 mm Isolation Properties Isolation voltage V isol DC voltage Creepage distance Clearance Comparative Tracking Index Copyright Vincotech t p=2s >200 CTI 2 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Characteristic Values Boost Switch TParameter j= Symbol Conditions V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 3,3 4 4,7 25 1,69 2,22 125 1,92 Static Gate-emitter threshold voltage Collec tor-emitter saturation voltage V GE(th) V GE=V CE 0,0003 15 V CEsat 30 25 125 V V 150 Collec tor-emitter c ut-off current I CES 0 650 Gate-emitter leakage c urrent I GES 20 0 Internal gate resistance Input capacitance 40 125 25 120 125 none rg µA nA Ω 2100 C ies f=1MHz Reverse transfer capac itance 25 0 25 25 pF 7,7 C res Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 1,67 K/W IGBT Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr R goff = 16 Ω R gon = 16 Ω t d(off) 15/0 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 0,3 µC Q rFWD = 1,1 µC 3 400 30 25 125 25 125 25 125 25 125 25 125 25 125 22 21 6 8 158 175 3 5 0,385 0,512 0,138 0,252 ns mWs 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Boost Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 2,46 2,6 125 2,03 150 - Static Forward voltage Reverse leakage c urrent 30 VF 25 665 Ir V 10 150 - µA Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 1,83 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current di /dt = 4188 A/µs 15/0 di /dt = 3749 A/µs 400 30 E rec (di rf/dt )max 25 125 25 125 25 125 25 125 25 125 28 36 17 77 0,336 1,091 0,040 0,251 6280 2364 A ns µC mWs A/µs Boost Inverse Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 2,48 2,93 125 1,73 Static Forward voltage 15 VF V 150 Reverse leakage c urrent 650 Ir 25 10 150 µA Thermal Thermal resistance junc tion to sink Copyright Vincotech R th(j-s) Phase-Change Material ʎ =3,4W/mK 1,65 4 K/W 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet DC Link Capacitor Parameter Symbol Conditions Value T j[°C] Min Typ Unit Max Static Capacitance per leg 47 C Tolerance -10 nF +10 % Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P Value I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] R100=1486 Ω 100 Power dissipation constant Typ Unit Max 22 -12 kΩ +12 % 25 200 mW 25 2 mW/K B-value B(25/50) Tol. ±3% 25 3950 K B-value B(25/100) Tol. ±3% 25 3998 K Vincotech NTC Reference Copyright Vincotech B 5 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Boost Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 90 I C (A) I C (A) 90 75 75 60 60 45 45 30 30 15 15 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs 25 °C tp = 250 V GE= 15 V 125 °C Tj = 125 150 °C V GE from 7 V to 17 V in steps of 1 V T j: Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 30 Z t h(j h(j--s)(K/W) I C (A) 101 25 100 20 15 0,5 10-1 10 0,2 0,1 0,05 0,02 5 0,01 0,005 0 10-2 10-4 0 0 2 4 6 8 10-3 10-2 V G E (V) tp = 100 µs 25 °C D= tp / T V CE = 10 V 125 °C R th(j-s) = 1,67 T j: Copyright Vincotech 150 °C 10-1 10 101 t p (s) 102 K/W IGBT thermal model values R th (K/W) 6 1,80E-01 τ (s) 1,06E+00 3,72E-01 1,72E-01 6,39E-01 5,52E-02 3,20E-01 1,27E-02 1,54E-01 3,03E-03 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Boost Switch Characteristics Gate voltage vs Gate charge IGBT V GE = f(Q G ) V G E (V) 15 130V 12,5 520V 10 7,5 5 2,5 0 0 10 20 30 40 50 60 70 80 Q G (nC) At 30 I C= A Boost Diode Characteristics FWD Typical forward characteristics I F = f(V F ) Z th(j-s) = f(t p) 101 90 Z t h( jj--s) (K/W) IF (A) FWD Transient thermal impedance as a function of pulse width 75 100 60 45 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 30 15 0 10-2 0 1 2 3 4 5 10-4 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 1032 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 1,83 K/W 150 °C FWD thermal model values Copyright Vincotech 7 R (K/W) 6,05E-02 τ (s) 3,63E+00 1,50E-01 6,48E-01 8,27E-01 7,70E-02 4,06E-01 1,51E-02 2,16E-01 3,45E-03 1,73E-01 7,36E-04 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Boost Inverse Diode Characteristics FWD Typical forward characteristics I F = f(V F ) Z th(j-s) = f(t p) 50 101 Z t h( jj--s) (K/W) IF (A) FWD Transient thermal impedance as a function of pulse width 40 100 30 20 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10 0 10-2 0 1 2 3 4 5 10-4 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 1,65 K/W 150 °C FWD thermal model values R (K/W) 5,16E-02 τ (s) 4,05E+00 1,04E-01 5,69E-01 7,15E-01 7,94E-02 4,04E-01 1,99E-02 2,10E-01 4,66E-03 1,69E-01 9,24E-04 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 8 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Boost Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(rg) 1,2 1 E ( mWs) E (mWs) Typical swit ching energy losses as a f unction of collector current Eon 0,75 Eon Eon 0,9 E on 0,5 0,6 Eoff Eo ff E off 0,25 Eoff 0,3 0 0 0 10 20 30 40 50 60 0 I C (A) 25 °C With an induc tive load at 400 V V CE = 15/0 V V GE = R gon = 16 Ω R goff = 16 Ω T j: 16 32 150 °C IC = Figure 3. FWD 30 R g ( Ω) 150 °C A Figure 4. FWD E rec = f(I c) E rec = f(r g ) 0,6 0,3 E (mWs) Typical reverse recovered energy loss as a f unct ion of gat e resist or Erec 0,45 0,225 0,3 0,15 0,15 0,075 80 125 °C T j: Typical reverse recovered energy loss as a f unction of collector current E (mWs) 64 25 °C With an inductive load at 400 V V CE = 15/0 V V GE = 125 °C 48 Erec Erec Erec 0 0 0 10 20 With an induc tive load at 400 V V CE = 15/0 V V GE = R gon = 16 Copyright Vincotech 30 40 50 I C (A) 0 60 25 °C T j: 16 32 With an inductive load at 400 V V CE = 15/0 V V GE = 125 °C 150 °C Ω IC= 9 30 48 64 r g (Ω) 80 25 °C T j: 125 °C 150 °C A 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Boost Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 1 t ( μs) t ( μ s) 1 td(off ) td(off ) 0,1 0,1 td(on) tr td(on) tr 0,01 0,01 tf tf 0,001 0,001 0 10 20 30 40 50 60 0 I C (A) (A) With an induc tive load at 125 °C Tj= 400 V V CE = 16 32 48 64 r g (Ω) 80 With an inductive load at 125 °C Tj= 400 V V CE = V GE = 15/0 V V GE = R gon = 16 Ω IC = R goff = 16 Ω Figure 7. FWD 15/0 V 30 A Figure 8. FWD Typical reverse recovery t ime as a f unction of collector current Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,12 t rr (μs) t r r (μs) 0,16 trr trr 0,09 0,12 0,06 0,08 0,03 0,04 trr trr 0 0 0 10 20 30 40 50 60 0 I C (A) At 400 V V GE = 15/0 V R gon = 16 Ω V CE= Copyright Vincotech 32 48 64 80 R g on (Ω) 25 °C T j: 16 At V CE = 125 °C V GE = 150 °C IC= 10 400 V 15/0 V 30 A 25 °C T j: 125 °C 150 °C 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Boost Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recovered charge as a f unction of collector current Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) 1,2 Q r (µC) Q r (μ C) 2 Qr Qr 1,5 0,9 1 0,6 0,5 0,3 Qr Qr 0 At 0 0 10 20 30 40 50 60 0 16 32 48 64 80 R g o n (Ω) I C (A) V CE = At 400 V V GE = 15/0 V R gon = 16 Ω 25 °C T j: At VCE= 125 °C V GE = 150 °C I C= Figure 11. FWD 400 V 15/0 V 30 A 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 50 60 I R M (A) I R M (A) IR M 40 45 IRM 30 30 20 IRM 15 IRM 10 0 0 0 At 10 20 400 V V GE = 15/0 V R gon = 16 Ω V CE = Copyright Vincotech 30 40 50 I C (A) 0 60 32 48 64 80 R g o n (Ω) 25 °C T j: 16 At V CE = 125 °C V GE = 150 °C IC= 11 400 V 15/0 V 30 A 25 °C T j: 125 °C 150 °C 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Boost Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 16000 d i /d t (A/ (A/µ µs) d i /dt (A/ (A/µs) s) 15000 diF / dt dir r /dt 12000 di F / dt di r r/ dt 12000 9000 8000 6000 4000 3000 0 0 0 10 20 30 40 50 0 60 16 32 I C (A) 400 V V GE = 15/0 V R gon = 16 Ω V CE = At 25 °C T j: At V CE = 125 °C V GE = 150 °C I C= Figure 15. 400 V 15/0 V 30 A 48 64 80 R g o n (Ω) IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 70 I C MAX I c CHIP 60 50 MODULE 40 Ic 30 V CE MAX 20 10 0 0 100 200 300 400 500 600 700 V C E (V) At 175 °C R gon = 16 Ω R goff = 16 Ω Tj = Copyright Vincotech 12 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Boost Switching Definitions General conditions = 125 °C = 16 Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) 16 Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 125 250 tdoff % % VCE 100 IC 200 VGE 90% VCE 90% 75 150 VGE IC VCE 50 100 VGE tdon tEoff 25 50 IC 1% VGE 10% 0 VCE 3% IC 10% 0 tEon -25 -0,15 -0,08 -0,01 0,06 0,13 0,2 -50 2,95 0,27 2,99 3,03 3,07 3,11 t (µs) V GE (0%) = 0 V V GE (0%) = 0 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 400 V V C (100%) = 400 V I C (100%) = 30 A I C (100%) = 30 A t doff = 0,175 µs t don = 0,021 µs t Eoff = Figure 3. 0,216 µs t Eon = Figure 4. 0,118 µs IGBT Turn-of f Swit ching Wavef orms & def init ion of t f IGBT Turn-on Swit ching Wavef orms & def init ion of tr 125 250 fitted % 3,15 t (µs) % VCE IC 100 IC 200 IC 90% 75 150 IC 60% VCE 50 100 IC 40% IC 90% tr 25 50 IC10% 0 IC 10% 0 tf -25 0,07 0,09 0,11 0,13 0,15 0,17 -50 2,95 0,19 t ( µs) V C (100%) = 400 2,98 3,01 3,04 V C (100%) = 400 3,1 3,13 V I C (100%) = 30 A I C (100%) = 30 A tf= 0,005 µs tr = 0,008 µs Copyright Vincotech 3,07 t (µs) V 13 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Boost Switching Definitions Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of t Eof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 200 % IC 1% 100 % Pon Eoff Poff 150 75 Eon 100 50 50 25 VGE 90% VCE 3% VGE 10% 0 0 tEon tEoff -50 -25 -0,15 -0,07 0,01 0,09 0,17 2,9 0,25 2,95 3 3,05 P off (100%) = 11,95 kW P on (100%) = 11,95 kW E off (100%) = 0,25 mJ E on (100%) = 0,51 mJ t Eoff = 0,216 µs t Eon = 0,118 µs Figure 7. 3,1 3,15 3,2 t ( µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % Id 100 trr 50 Vd 0 IRRM 10% -50 fitted -100 IRRM 90% IRRM 100% -150 2,9 2,95 3 3,05 3,1 3,15 3,2 t (µs) V d (100%) = 400 V I d (100%) = 30 A I RRM (100%) = -36 A t rr = 0,077 µs Copyright Vincotech 14 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Boost Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % Id Qrr 100 Erec 100 tQrr 50 tErec 75 0 50 -50 25 -100 0 Prec -150 2,95 3 3,05 3,1 3,15 -25 3,2 2,9 t (µs) 2,98 3,06 3,14 I d (100%) = 30 A P rec (100%) = 11,95 kW 1,09 µC E rec (100%) = 0,25 mJ t Qrr = 0,152 µs t Erec = 0,152 µs Copyright Vincotech 3,3 t (µs) Q rr (100%) = 125°C 3,22 25 25 ooC C 25°C 15 125 125 ooCC 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Ordering Code & Marking Version without thermal paste 12mm housing NN-NNNNNNNNNNNNNN NNNNNNNN WWYY UL Vinco LLLLL SSSS Ordering Code 10-FZ07B2A030SM02-M575L48 Text Datamatrix in DataMatrix as M575L48 in packaging barcode as M575L48 Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-NNNNNNNN WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 33,3 0 NTC1 2 30,7 0 NTC2 3 23,85 0 Boost3 4 15,95 0 Boost2 6 2,6 0 DC+ 7 0 0 DC+ 8 0 22,3 DC- 11 13,1 22,3 DC- 12 15,9 22,3 S2 13 19,4 22,3 G2 14 15 16 27,7 30,7 33,3 22,3 22,3 22,3 S3 G3 DC- Copyright Vincotech 16 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Pinout Identification ID Component Voltage Current Function T2,T3 IGBT 650V 30A Boost Switch D20,D30 FWD 650V 30A Boost Diode D2,D3 FWD 650V 15A Boost Inverse Diode C1,C2 Capacitor 1000V NTC NTC Copyright Vincotech Comment DC Link Capacitor Thermistor 17 25 Jun. 2015 / Revision 1 10-FZ07B2A030SM02-M575L48 datasheet Packaging instruction Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. Document No.: Date: Modification: Pages 10-FZ07B2A030SM02-M575L48-D2-14 24 Jul. 2015 New topology name 1 DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 18 25 Jun. 2015 / Revision 1