10-PY126PA020ME-L227F18Y datasheet flow PACK 1 1200 V / 20 mΩ Features flow 1 12mm housing ● Wolfspeed(Cree)™ Silicon Carbide Power MOSFET, C2M™ MOSFET Technology ● Sixpack with three separated legs ● Solderless Press-fit Mounting Technology Schematic Target applications ● Battery Charger Types ● 10-PY126PA020ME-L227F18Y Maximum Ratings Tj=25°C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 53 A 320 A 4000 mJ 104 W Inverter Switch Drain-source voltage V DSS Drain current ID T j = T jmax Peak drain current I DM t p limited by T jmax Ts = 80 °C I D = 80 A Avalanche energy, single pulse E AS Total power dissipation P tot Gate-source voltage V GSS -10/+25 V Maximum Junction Temperature T jmax 150 °C Copyright Vincotech V DD = 50 V T j = T jmax 1 Ts = 80 °C 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Parameter Conditions Symbol Value Unit Module Properties Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V min 12,7 mm 12,01 mm Isolation Properties Isolation voltage V isol DC voltage Creepage distance Clearance Comparative Tracking Index Copyright Vincotech t p=2s >200 CTI 2 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Characteristic Values Inverter Switch Parameter Symbol Conditions Value V GS [V] V DS [V] I D [A] T j[ °C] Min Unit Typ Max 25 22 26 125 33 150 35 Static Drain-sourc e on-state resistanc e Gate-source threshold voltage 20 r DS(on) V GS(th) 80 V GS = V DS 0,02 Gate to Sourc e Leakage Current I GSS 20 0 Zero Gate Voltage Drain Current I DSS 0 1200 25 2,4 2,8 25 500 125 25 2 0,9 Gate c harge Qg 230 Gate to source charge Q GS Gate to drain charge Q GD 74 Short-circ uit input capacitance C iss 3786 Short-circ uit output capacitance C oss Reverse transfer capac itance C rss f=1MHz 0 200 125 rg 800 V 125 Internal gate resistance -5/20 mΩ 80 1000 25 25 nA µA Ω 56 nC pF 300 20 Reverse Diode Static Diode Forward Voltage Continuous Diode Forward Current -5 VSD 40 25 3,3 150 3,1 T C=25°C IS V 120 A Thermal Thermal resistance junction to sink Copyright Vincotech R th(j-s) phase-c hange material λ=3,4 W/mK 0,67 3 K/W 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Inverter Switch Parameter Symbol Conditions V GE [V] Value V r [V] I C [A] or or I F [A] or V CE [V] I D [A] T j[ °C] Min Typ Unit Max MOSFET Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr R goff = 2 Ω R gon = 2 Ω t d(off) -5/16 Fall time 600 60 tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Q rFWD = 0,9 µC Q rFWD = 1,5 µC 25 125 25 125 25 125 25 125 25 125 25 125 31 30 9 9 64 67 20 18 0,518 0,509 0,212 0,177 25 125 25 125 25 125 25 125 25 125 88 156 18 21 0,871 1,479 0,200 0,296 15261 32554 ns mWs Reverse Diode Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Reverse recovered energy Peak rate of fall of recovery current Qr di /dt = 10171 A/µs -5/16 di /dt = 9687 A/µs 600 60 E rec (di rf/dt )max A ns µC mWs A/µs Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] Value R100=1486 Ω 100 Power dissipation constant Typ Unit Max 21,5 -4,5 kΩ +4,5 % 25 210 mW 25 3,5 mW/K B-value B(25/50) 25 3884 K B-value B(25/100) 25 3964 K Vincotech NTC Reference Copyright Vincotech F 4 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Inverter Switch Characteristics MOSFET Typical output characteristics MOSFET Typical output characteristics I D = f(V DS) I D= f(V DS) 200 I D (A) I D (A) 200 160 160 120 120 80 80 40 40 0 0 -40 0 2 4 tp = 250 µs V GS= 20 V 6 8 T j: VDS (V) 10 -6 -4 -2 0 2 25 °C tp = 250 125 °C Tj = 150 150 °C V GS from 0 V to 20 V in steps of 2 V MOSFET Typical transfer characteristics 4 6 8 µs °C Transient thermal impedance as a function of pulse width I D = f(V GS) 10 VDS (V) MOSFET Z th(j-s)= f(t p) 35 ID (A) 100 30 25 20 10-1 15 0,5 0,2 10 0,1 0,05 0,02 5 0,01 0,005 0 10-2 10-4 0 0 2 4 6 8 10 12 14 16 10-3 10-2 10-1 100 101 102 VGS (V) tp = 100 µs V DS = 10 V T j: 25 °C D= tp / T 125 °C R th(j-s) = 0,67 K/W 150 °C Copyright Vincotech 5 R (K/W) Tau(s) 1,01E-01 1,43E+00 2,02E-01 1,77E-01 2,13E-01 6,03E-02 7,84E-02 8,37E-03 7,99E-02 1,21E-03 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Inverter Switch Characteristics MOSFET Gate voltage vs Gate charge VGS (V) V GS = f(Q g) 25 20 800 V 15 10 5 0 -5 0 50 100 150 200 250 Qg (nC) At I C= 80 A Thermistor Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 6 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Inverter Switching Characteristics Figure 1. MOSFET Figure 2. MOSFET Typical swit ching energy losses as a f unct ion of collect or current Typical switching energy losses as a f unct ion of gat e resist or E = f(I D) E = f(rg) 1,6 E (mWs) E (mWs) 0,8 Eo n Eon 0,6 Eo n 1,2 Eon E o ff Eoff 0,4 0,8 0,2 0,4 Eoff Eoff 0 0 0 20 40 60 80 100 120 0 I C (A) 25 °C With an inductive load at 600 V V DS = V GS = -5/16 125 °C T j: 1 2 3 V V GS = -5/16 V ID = 60 A R gon = 2 Ω R goff = 2 Ω 4 Figure 3. FWD 5 T j: 8 E rec = f(I D) E rec = f(r g ) E ( mWs) 0,6 Erec R g ( Ω) 9 125 °C FWD Typical reverse recovered energy loss as a f unct ion of gat e resist or E (mWs) 7 Figure 4. Typical reverse recovered energy loss as a f unct ion of collect or current 0,5 6 25 °C With an inductive load at 600 V V DS = 0,4 0,3 0,4 Erec Erec 0,2 0,3 Erec 0,2 0,1 0,1 0 0 0 20 40 With an inductive load at 600 V V DS = 60 80 100 I D (A) 0 120 25 °C T j: 1 2 3 With an inductive load at 600 V V DS = 125 °C V GS = -5/16 V V GS = -5/16 V R gon = 2 Ω ID = 60 A Copyright Vincotech 7 4 5 6 7 8 r g (Ω) 9 25 °C T j: 125 °C 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Inverter Switching Characteristics Figure 5. MOSFET Figure 6. MOSFET Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I D) t = f(r g) 0,1 t ( μs) t ( μ s) 0,1 td(off ) td(off ) td(on) td(on) tf tr tf 0,01 0,01 tr 0,001 0,001 0 20 40 60 80 100 120 0 I D (A ) With an inductive load at 125 °C Tj= 1 2 3 V DS = 600 V V DS = 600 V V GS = -5/16 V V GS = -5/16 V ID = 60 A R gon = 2 Ω R goff = 2 Ω 4 5 6 7 8 9 r g (Ω) With an inductive load at 125 °C Tj = Figure 7. FWD Figure 8. FWD Typical reverse recovery t ime as a f unct ion of collect or current Typical reverse recovery time as a f unct ion of MOSFET t urn on gat e resist or t rr = f(I D) t rr = f(R gon) 0,025 t rr (μs) t rr (μs) 0,03 trr trr 0,025 0,02 trr trr 0,02 0,015 0,015 0,01 0,01 0,005 0,005 0 0 0 20 40 60 80 100 120 0 I D (A) At 600 V V GS = V DS= -5/16 V R gon = 2 Ω Copyright Vincotech 2 3 4 5 6 7 8 9 R g o n (Ω) 25 °C T j: 1 At 125 °C 8 600 V V GS = V DS = -5/16 V ID = 60 A 25 °C T j: 125 °C 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Inverter Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recovered charge as a f unct ion of collect or current Typical recoved charge as a f unction of MOSFET turn on gat e resist or Qr = f(I D) Q r = f(R gon) Q r (µC) Q r (μC) 2,5 Qr 2 2 1,5 Qr 1,5 Qr 1 1 Qr 0,5 0,5 0 At 0 0 20 40 60 80 100 120 0 1 2 3 4 5 6 7 8 I D (A) A V DS = 600 V V GS = -5/16 V R gon = 2 Ω 25 °C T j: At V DS = 600 V GS = 125 °C ID= Figure 11. FWD V -5/16 V 60 A 9 R g on (Ω) 25 °C T j: 125 °C Figure 12. FWD Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a f unct ion of MOSFET turn on gat e resist or I RM = f(I D) I RM = f(R gon) 250 I R M (A) I R M (A) 250 I RM 200 200 150 150 IRM 100 100 50 50 I RM 0 0 0 At IRM 20 V DS = 40 600 V V GS = -5/16 V R gon = 2 Ω Copyright Vincotech 60 80 100 I D (A) 0 120 2 3 4 5 6 7 8 9 R go n (Ω) 25 °C T j: 1 At 125 °C 9 V DS = 600 V V GS = -5/16 V ID = 60 A 25 °C T j: 125 °C 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Inverter Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unct ion of MOSFET t urn on gate resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) d i /d t (A/ (A/µ µs) d i /dt (A/ (A/µs) s) 60000 di F / dt dir r/dt 50000 di F / dt di r r/ dt 40000 40000 30000 30000 20000 20000 10000 10000 0 0 0 20 40 60 80 100 0 120 1 2 3 4 5 6 I C (A) At 600 V V GS = V DS = -5/16 V R gon = 2 Ω Copyright Vincotech 25 °C T j: At 125 °C V DS = V GS = I D= 10 600 V 25 °C -5/16 V 125 °C 60 A 7 8 9 R g o n (Ω) 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Inverter Switching Definitions General conditions = 125 °C = 2Ω Tj R gon = R goff Figure 1. MOSFET Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) 2Ω Figure 2. MOSFET Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 150 400 % VDS % 125 350 tdoff VDS 90% VGS 90% 75 250 VGS 50 ID 300 ID 100 200 150 tEoff VDS 100 25 VGS tdon 50 ID 1% 0 -25 tEon -50 -50 0 0,02 0,04 0,06 0,08 0,1 -100 2,99 0,12 t (µs) 3,01 3,03 V GS (0%) = -5 V V GS (0%) = -5 V V GS (100%) = 16 V V GS (100%) = 16 V V DS (100%) = 600 V V DS (100%) = 600 V I D (100%) = 60 A I D (100%) = 60 A t doff = 0,067 µs t don = 0,030 µs t Eoff = Figure 3. 0,070 µs t E on = Figure 4. 0,055 µs MOSFET Turn-of f Swit ching Wavef orms & def init ion of tf VGS 3% ID 10% VGS 10% 0 3,05 3,07 t (µs) MOSFET Turn-on Swit ching Wavef orms & def init ion of t r 150 400 % % 350 125 fitted 100 300 ID ID ID 90% 250 75 200 ID 60% 50 150 VCE ID 40% 100 25 IC 90% tr ID 10% VDS 50 0 -25 0,06 0,07 0,08 0,09 IC 10% 0 tf 0,1 -50 3,025 0,11 t (µs) 3,035 3,045 3,065 t (µs) V C (100%) = 600 V V C (100%) = 600 V I D (100%) = 60 A I D (100%) = 60 A tf = 0,017 µs tr = 0,009 µs Copyright Vincotech 3,055 11 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Inverter Switching Definitions Figure 5. MOSFET Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. MOSFET Turn-on Swit ching Wavef orms & def init ion of t Eon 125 125 ID 1% % % Eon 100 100 Eoff Pon 75 75 50 50 25 Poff VDS 3% VGS 10% 25 0 VGS 90% 0 tEon -25 tEoff -50 -25 0,01 0,03 0,05 0,07 0,09 3 0,11 3,01 3,02 3,03 3,04 P off (100%) = 36,02 kW P on (100%) = 36,02 kW E off (100%) = 0,18 mJ E on (100%) = 0,51 mJ t Eoff = 0,07 µs t E on = 0,05 µs Figure 7. 3,05 3,06 3,07 t (µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def inition of t rr 200 % Id 100 trr Vd 0 fitted IRRM 10% -100 -200 IRRM 90% IRRM 100% -300 3 3,025 3,05 3,075 3,1 3,125 3,15 t (µs) V d (100%) = 600 V I d (100%) = 60 A I RRM (100%) = -156 A t rr = 0,021 µs Copyright Vincotech 12 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Inverter Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 350 200 % % Prec Id 250 100 tQrr Qrr 150 0 tErec Erec 50 -100 -50 -200 -150 -300 3,02 3,03 3,04 3,05 3,06 3,07 3,08 3,09 3,1 3,11 -250 3,04 3,12 t (µs) 3,05 3,06 3,07 3,08 3,1 3,11 t (µs) I d (100%) = 60 A P rec (100%) = 36,02 kW Q rr (100%) = 1,48 µC E rec (100%) = 0,30 mJ t Q rr = 0,04 µs t E rec = 0,04 µs Copyright Vincotech 3,09 13 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Ordering Code & Marking Version without thermal paste 12mm housing with thermal paste 12mm housing Ordering Code 10-PY126PA020ME-L227F18Y 10-PY126PA020ME-L227F18Y-/3/ NN-NNNNNNNNNNNNNN NNNNNNNN WWYY UL Vinco LLLLL SSSS Text Datamatrix in DataMatrix as L227F18Y L227F18Y in packaging barcode as L227F18Y L227F18Y-/3/ Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-NNNNNNNN WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Pos 1 52,2 2,7 DC-3 2 52,2 0 DC-3 3 45,5 12 G15 4 42,5 13 S15 5 41,2 0 DC+3 6 38,5 0 DC+3 7 33,1 0 DC+2 8 30,4 0 DC+2 9 25 10 G13 10 22 11 S13 11 19,4 0 DC-2 12 16,7 0 DC-2 13 13,7 0 DC-1 14 11 0 DC-1 15 8,7 12 G11 16 5,7 13 S11 17 0 0 DC+1 18 0 2,7 DC+1 19 14,3 15,6 Therm2 20 16,1 12,6 Therm1 21 0 28,2 22 2,7 28,2 Ph1 Ph1 23 5,7 26,7 24 8,7 25,7 S12 G12 Pin X Y Pos 25 19,4 28,2 Ph2 29 36,3 28,2 Ph3 26 22,1 28,2 Ph2 30 39 28,2 Ph3 27 28 23,1 26,1 25,2 24,2 S14 G14 31 32 42 45 26,7 25,7 S16 G16 Copyright Vincotech Pin table [mm] 14 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Pinout Identification ID Component Voltage Current Function T11-T16 MOSFET 1200 V 20 mΩ Inverter Switch Rt NTC - - Thermistor Copyright Vincotech 15 Comment 29 Sep. 2015 / Revision 1 10-PY126PA020ME-L227F18Y datasheet Packaging instruction Standard packaging quantity (SPQ) 100 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 1 packages see vincotech.com website. Package data Package data for flow 1 packages see vincotech.com website. Document No.: Date: 10-PY126PA020ME-L227F18Y-D1-14 29 Sep. 2015 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 16 29 Sep. 2015 / Revision 1