10-0B06PPA004RC-L022A09 datasheet flow PIM 0B + PFC 600 V / 4 A Features flow 0 B housing ● Converter, PFC, inverter in one housing ● New high speed IGBT for PFC ● One screw heatsink mounting Target applications Schematic ● Embedded drives Types ● 10-0B06PPA004RC-L022A09 Maximum Ratings Tj=25°C, unless otherwise specified Inverter Switch Copyright Vincotech 1 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet PFC Switch PFC Diode PFC Switch Protection Diode Rectifier Diode Copyright Vincotech 2 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Characteristic Values Inverter Switch Copyright Vincotech 3 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet PFC Switch Copyright Vincotech 4 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet PFC Diode PFC Protection Diode Copyright Vincotech 5 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Rectifier Diode Thermistor Module Properties Copyright Vincotech 6 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Inverter Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 12 IC(A) IC (A) 12 9 9 6 6 3 3 0 0 0 1 2 3 4 0 5 0,5 1 1,5 2 2,5 3 3,5 4 4,5 tp = 250 µs V GE= 15 V T j: 25 °C tp = 250 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V Typical transfer characteristics 5 VCE (V) VCE (V) IGBT µs °C Transient thermal impedance as a function of pulse width IGBT I C = f(V CE) Z thJH = f(t p) 10 ZthJH (K/W) IC (A) 4 3 1 2 0,5 0,1 0,2 0,1 1 0,05 0,02 0,01 0,005 0 0,01 1,00E-04 0 0 2 4 6 8 10 12 1,00E-03 1,00E-02 1,00E-01 tp = 100 µs V CE = 10 V T j: 25 °C D = 125 °C R thJH = 150 °C Copyright Vincotech 1,00E+00 1,00E+01 1,00E+02 tp(s) VCE (V) tp / T 2,60 K/W IGBT thermal model values 7 R (K/W) Tau (s) 7,48E-02 2,66E+00 1,91E-01 2,47E-01 1,40E+00 4,11E-02 4,54E-01 1,27E-02 4,75E-01 2,92E-03 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Inverter Switch Characteristics Gate voltage vs Gate charge IGBT Safe operating area V GE = f(Q G ) IGBT I C = f(V CE) 100 I C (A) V G E (V) 18 16 14 120V DC 10 480V 1ms 10ms 100ms 100µs 12 10 1 8 6 0,1 4 2 0 0,01 0 5 10 15 20 25 30 1 10 100 1000 Q G (nC) V C E (V) At At I C= 4 D = A Short circuit duration as a function of V GE IGBT 80 ºC V GE = Tj = ±15 T jmax V ºC Typical short circuit current as a function of V GE t pSC = f(V GE) IGBT I SC = f(V GE) 14 70 I sc (A) t pS C (µS) single pulse Ts = 12 60 10 50 8 40 6 30 4 20 2 10 0 0 10 11 12 13 14 15 16 12 17 13 14 15 V G E (V) 17 18 19 20 V G E (V) At V CE = 16 At 400 Start at T j ≤ 150 Copyright Vincotech V V CE ≤ ºC Start at T j ≤25 8 400 V ºC 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet PFC Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) I C = f(V CE) 50 IC (A) 50 IC(A) IGBT 45 45 40 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 0 1 2 3 4 0 5 0,5 1 1,5 2 2,5 3 3,5 4 4,5 tp = 250 µs V GE= 15 V T j: 25 °C tp = 250 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V IGBT Typical transfer characteristics 5 VCE (V) VCE (V) µs °C IGBT Transient thermal impedance as a function of pulse width I C = f(V CE) Z thJH = f(t p) 10 ZthJH (K/W) IC (A) 15 12 1 9 6 0,5 0,1 0,2 0,1 0,05 3 0,02 0,01 0,005 0 0,01 1,00E-04 0 0 1 2 3 4 5 6 7 8 1,00E-03 1,00E-02 1,00E-01 100 µs V CE = 10 V T j: 25 °C D = 125 °C R thJH = 150 °C Copyright Vincotech 1,00E+01 1,00E+02 tp(s) VCE (V) tp = 1,00E+00 tp / T 2,14 K/W IGBT thermal model values 9 R (K/W) Tau (s) 1,10E-01 1,85E+00 3,05E-01 2,58E-01 8,44E-01 6,42E-02 4,55E-01 1,26E-02 2,79E-01 3,05E-03 1,45E-01 4,84E-04 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet PFC Switch Characteristics Gate voltage vs Gate charge IGBT V GE = f(Q g) VGE (V) 15 12,5 130V 10 520V 7,5 5 2,5 0 0 5 10 15 20 25 30 35 40 Qg (nC) At I C= 15 A PFC Diode Characteristics FWD Typical forward characteristics Z th(j-s) = f(t p) 50 100 Z t h(j h(j--s) (K/W) IF (A) I F = f(V F ) FWD Transient thermal impedance as a function of pulse width 40 30 10-1 20 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 0 10-2 0 0,5 1 1,5 2 2,5 3 10-4 10-3 10-2 VF (V) tp = 250 µs 10-1 100 101 1032 t p (s) 25 °C T j: 125 °C D= tp / T 150 °C R th(j-s) = 2,19 K/W FWD thermal model values Copyright Vincotech 10 R (K/W) 6,49E-02 τ (s) 4,22E+00 1,67E-01 4,66E-01 9,76E-01 5,57E-02 5,62E-01 1,45E-02 3,00E-01 2,81E-03 1,17E-01 5,62E-04 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet PFC Protection Diode characteristics FWD Typical forward characteristics Z th(j-s) = f(t p) 18 101 Z t h(j h(j--s) (K/W) IF (A) I F = f(V F) FWD Transient thermal impedance as a function of pulse width 15 100 12 9 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 6 3 0 10-2 0 0,5 1 1,5 2 2,5 3 10-5 10-4 10-3 VF (V) tp = 250 µs 10-2 10-1 100 101 t p (s) 25 °C T j: 125 °C D = tp / T 150 °C R th(j-s) = 3,01 K/W FWD thermal model values Copyright Vincotech 11 R (K/W) 5,15E-02 τ (s) 9,38E+00 9,53E-02 8,91E-01 3,22E-01 1,25E-01 1,35E+00 2,97E-02 8,32E-01 8,19E-03 3,58E-01 1,78E-03 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Rectifier characteristics Typical f orward charact erist ics Rect if ier Diode Rectif ier Diode Z th(j-s) = f(t p) 21 101 Z t h(j h(j--s) (K/W) IF (A) I F = f(V F) Transient t hermal impedance as a f unct ion of pulse widt h 18 15 100 12 9 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 6 3 10-2 0 0 0,5 1 1,5 2 2,5 10-4 3 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D = tp / T 125 °C R th(j-s) = 2,09 K/W 150 °C Diode thermal model values R (K/W) 4,86E-02 1,03E+01 1,45E-01 6,91E-01 τ (s) 1,18E+00 6,09E-02 5,40E-01 1,88E-02 1,74E-01 1,96E-03 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 12 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Inverter Switching Definitions Figure 1. IGBT Figure 2. IGBT Typical switching energy losses as a function of collector current Typical switching energy losses as a function of gate resistor E = f(I C) E = f(R G) 0,35 E (mWs) E (mWs) 0,35 Eon 0,3 Eon 0,3 0,25 0,25 Eon 0,2 0,2 Eon 0,15 0,15 Eoff 0,1 Eoff Eoff 0,1 Eoff 0,05 0,05 0 0 0 1 2 3 4 5 6 7 0 8 50 100 150 200 250 IC(A) 25 With an inductive load at V CE = 400 V V GE = ±15 V R gon = 64 Ω R goff = 64 Ω T j: °C With an inductive load at 25 125 °C V CE = 400 V 150 °C V GE = ±15 V 4 A IC = Figure 3. FWD T j: 300 °C 125 °C 150 °C Figure 4. FWD Typical reverse recovery energy loss as a function of collector current Typical reverse recovery energy loss as a function of gate resistor E rec = f(I c ) E rec = f(R G) 0,12 0,14 E (mWs) E (mWs) RG (Ω ) Erec 0,12 0,1 Erec 0,1 0,08 0,08 0,06 Erec 0,06 Erec 0,04 0,04 0,02 0,02 0 0 0 1 2 3 4 5 6 7 0 8 50 100 150 200 250 IC (A) With an inductive load at 25 V CE = 400 V V GE = ±15 V R gon = 64 Ω Copyright Vincotech T j: °C With an inductive load at 25 125 °C V CE= 400 V 150 °C V GE= ±15 V 4 A I C= 13 T j: RG(Ω ) 300 °C 125 °C 150 °C 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Inverter Switching Definitions Figure 5. IGBT Figure 6. IGBT Typical switching times as a function of collector current Typical switching times as a function of gate resistor t = f(I C ) t = f(R G) 1 t (μs) t (μs) 1 tdon tdoff 0,1 tdoff 0,1 tdon tf tf tr tr 0,01 0,01 0,001 0,001 0 1 2 3 4 5 6 7 0 8 50 100 150 200 250 I C(A) 300 RG (Ω) With an inductive load at With an inductive load at Tj = 125 °C Tj = 125 °C V CE = 400 V V CE = 400 V ±15 V 4 A V GE = ±15 V V GE = R gon = 64 Ω IC = R goff = 64 Ω Figure 7. FWD Figure 8. FWD t rr = f(I C ) t rr = f(R gon) 0,3 0,4 t rr(μs) Typical reverse recovery time as a function of IGBT turn on gate resistor t rr(μs) Typical reverse recovery time as a function of collector current trr 0,25 trr 0,35 0,3 trr 0,2 0,25 0,15 0,2 trr 0,15 0,1 0,1 0,05 0,05 0 0 0 1 2 3 4 5 6 7 8 0 50 V CE= 400 100 125 °C V GE = ±15 V 150 °C I C= 4 A 150 200 250 I C (A) At V CE = 400 V V GE = ±15 V R gon = 64 Ω Copyright Vincotech 25 T j: 300 RGon(Ω) °C At 14 V 25 T j: °C 125 °C 150 °C 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Inverter Switching Definitions Figure 9. FWD Figure 10. FWD Typical reverse recovery charge as a function of collector current Typical reverse recovery charge as a function of IGBT turn on gate resistor Q rr = f(I C) Q rr = f(R gon) Q rr (µ µ C) Q rr (µC) 0,6 Qrr 0,5 0,45 0,4 Qrr 0,35 0,4 0,3 0,3 0,25 Qrr Qrr 0,2 0,2 0,15 0,1 0,1 6E-16 0,05 0 At 1 2 3 4 5 6 7 8 -0,1 0 0 50 100 150 200 250 I C (A) At V CE = 400 V V GE = ±15 V R gon = 64 Ω 25 T j: V CE= 400 V 125 °C °C At V GE = ±15 V 150 °C I C= 4 A Figure 11. 300 RGon(Ω) FWD 25 T j: °C 125 °C 150 °C Figure 12. FWD Typical reverse recovery current as a function of IGBT turn on gate resistor I RRM = f(I C ) I RRM = f(R gon) 5 I rrM (A) I rrM (A) Typical reverse recovery current as a function of collector current IRRM 4,5 8 7 4 6 IRRM 3,5 5 3 4 2,5 IRRM 2 3 IRRM 1,5 2 1 1 0,5 0 0 0 1 2 3 4 5 6 7 0 8 50 100 150 200 250 At V CE = 400 V V GE = ±15 V R gon = 64 Ω Copyright Vincotech 25 T j: 300 RGon (Ω) I C (A) V CE= 400 V 125 °C °C At V GE = ±15 V 150 °C I C= 4 A 15 25 T j: °C 125 °C 150 °C 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Inverter Switching Definitions Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of dI 0/dt ,dI rec /dt = f(I c ) IGBT t urn on gate resist or 500 direc / dt (A/µ µ s) direc / dt (A/µs) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current dI0/dt 450 dIrec/dt 400 350 900 dI0/dt 800 dIrec/dt 700 600 300 500 250 400 200 300 150 200 100 100 50 0 0 0 1 2 3 4 5 6 7 0 8 50 100 At V CE = 400 V V CE = 400 V V GE = ±15 V At V GE = ±15 V R gon = 64 Ω I C= 4 A Figure 15. 150 200 250 300 RGon(Ω) I C (A) IGBT Reverse bias safe operating area I C = f(V CE ) IC (A) 9 IC MAX 8 Ic 5 4 3 VCE MAX MODULE 6 Ic CHIP 7 2 1 0 0 100 200 300 400 500 600 700 VCE(V) At 175 °C R gon = Tj = 64 Ω R goff = 64,015 Ω Copyright Vincotech 16 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Inverter Switching Definitions General conditions Tj = 125 °C R gon = 64 Ω R goff = 64 Ω Figure 1. IGBT Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for E off) Figure 2. IGBT Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for E on) 225 125 % tdoff % VCE 200 100 IC 175 VCE 90% VGE 90% 150 75 IC VGE 125 VCE 100 50 VGE tEoff 75 25 tdon 50 IC 1% 25 0 0 VCE 3% IC 10% tEon VGE 10% -25 -25 -0,2 -0,1 0 0,1 0,2 2,9 0,3 3 3,1 3,2 3,3 time (us) V GE (0%) = -15 V V GE (0%) = -15 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 400 V V C (100%) = 400 V I C (100%) = 4 A I C (100%) = 4 A t doff = 0,098 µs t don = 0,081 µs t E off = 0,293 µs t E on = 0,220 µs Figure 3. IGBT Turn-off Switching Waveforms & definition of tf Figure 4. IGBT Turn-on Switching Waveforms & definition of tr 125 225 % fitted % 100 3,4 time(us) VCE IC IC 200 175 IC 90% 150 75 125 IC 60% VCE 50 100 IC 40% IC 90% 75 tr 25 50 IC10% 0 25 tf IC 10% 0 -25 -0,1 -0,05 0 0,05 0,1 0,15 -25 2,95 0,2 time (us) 3 3,05 3,1 3,2 3,25 time(us) V C (100%) = 400 V V C (100%) = 400 V I C (100%) = 4 A I C (100%) = 4 A tf = 0,047 µs tr = 0,018 µs Copyright Vincotech 3,15 17 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Inverter Switching Definitions Figure 5. IGBT Turn-off Switching Waveforms & definition of tEoff Figure 6. IGBT Turn-on Switching Waveforms & definition of tEon 125 200 % Pon % IC 1% 175 Eoff 100 Poff 150 75 125 Eon 100 50 75 25 50 VGE 90% 25 tEoff -25 -0,1 VCE 3% VGE 10% 0 0 tEon -25 0 0,1 0,2 0,3 2,9 3 3,1 P off (100%) = 1,59 kW P on (100%) = 1,59 E off (100%) = 0,08 mJ E on (100%) = 0,16 mJ t E off = 0,29 µs t E on = 0,22 µs Figure 7. 3,2 3,3 time(us) time (us) kW FWD Turn-off Switching Waveforms & definition of trr 125 % Id 100 75 trr 50 25 Vd 0 fitted IRRM 10% -25 -50 -75 IRRM 90% -100 IRRM 100% -125 3 3,05 3,1 3,15 3,2 3,25 3,3 3,35 time(us) V d (100%) = 400 V I d (100%) = 4 A I RRM (100%) = -4 A t rr = 0,219 µs Copyright Vincotech 18 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Inverter Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Q rr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec ) 150 125 % % Id 100 Erec Qrr 100 tQrr 50 tErec 75 0 50 -50 25 -100 0 -150 3 3,1 3,2 3,3 3,4 3,5 Prec -25 3,6 3 3,1 3,2 3,3 time(us) 3,5 3,6 time(us) I d (100%) = 4 A P rec (100%) = 1,59 Q rr (100%) = 0,38 µC E rec (100%) = 0,10 mJ t Q rr = 0,44 µs t E rec = 0,44 µs Copyright Vincotech 3,4 19 kW 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet PFC Switching Definitions Figure 1. IGBT Figure 2. IGBT Typical switching energy losses as a function of gate resistor E = f(I C) E = f(R G ) 0,35 0,35 Eon E (mWs) E (mWs) Typical switching energy losses as a function of collector current 0,3 Eon 0,25 Eon 0,3 0,25 Eon 0,2 0,2 0,15 0,15 0,1 0,1 Eoff Eoff Eoff 0,05 0,05 0 Eoff 0 0 2 4 6 8 10 12 0 I C(A) 25 °C With an inductive load at 400 V V CE = V GE = 15/0 V R gon = 32 Ω R goff = 32 Ω T j: 32 64 96 With an inductive load at 125 °C V CE = 400 V 150 °C V GE = 15/0 V 6 A IC = Figure 3. FWD 128 RG (Ω ) T j: 125 °C 150 °C Figure 4. FWD Typical reverse recovery energy loss as a function of gate resistor E rec = f(I c) E rec = f(R G ) E (mWs) E (mWs) Typical reverse recovery energy loss as a function of collector current 0,15 Erec 160 25 °C 0,15 0,12 0,12 0,09 0,09 Erec Erec 0,06 0,06 0,03 0,03 Erec 0 0 0 2 4 6 8 10 0 12 32 64 96 128 IC (A) With an inductive load at 25 °C V CE = 400 V V GE = 15/0 V R gon = 32 Ω Copyright Vincotech T j: With an inductive load at 125 °C V CE= 400 V 150 °C V GE= 15/0 V 6 A I C= 20 RG(Ω ) 160 25 °C T j: 125 °C 150 °C 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet PFC Switching Definitions Figure 5. IGBT Figure 6. IGBT Typical switching times as a function of collector current Typical switching times as a function of gate resistor t = f(I C) t = f(R G ) t (μs) 1 t (μs) 1 tdoff tdoff 0,1 0,1 tf tr tdon tdon 0,01 0,01 tf tr 0,001 0,001 0 2 4 6 8 10 0 12 32 64 96 128 With an inductive load at 160 RG (Ω) I C(A) With an inductive load at Tj = 125 °C Tj = 125 °C V CE = 400 V V CE = 400 V 15/0 V 6 A V GE = 15/0 V V GE = R gon = 32 Ω IC = R goff = 32 Ω Figure 7. FWD Figure 8. FWD Typical reverse recovery time as a function of IGBT turn on gate resistor t rr = f(I C) t rr = f(R gon) 0,1 0,1 t rr(μs) t rr(μs) Typical reverse recovery time as a function of collector current 0,08 trr 0,08 trr 0,06 0,06 trr trr 0,04 0,04 0,02 0,02 0 0 0 2 4 6 8 10 12 0 32 64 96 128 At V CE= 400 V V GE = 15/0 V R gon = 32 Ω Copyright Vincotech 25 °C T j: 160 RGon(Ω) I C (A) At V CE= 125 °C V GE = 150 °C I C= 21 400 V 15/0 V 6 A 25 °C T j: 125 °C 150 °C 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet PFC Switching Definitions Figure 9. FWD Figure 10. FWD Typical reverse recovery charge as a function of collector current Typical reverse recovery charge as a function of IGBT turn on gate resistor Q rr = f(I C) Q rr = f(R gon) 0,8 Q rr (µ µ C) Q rr (µC) 0,6 Qrr 0,5 Qrr 0,6 0,4 0,4 0,3 Qrr Qrr 0,2 0,2 0,1 At 0 0 0 2 4 6 8 10 12 0 32 64 96 128 160 RGon(Ω) IC (A) At 400 V V GE = V CE= 15/0 V R gon = 32 Ω 25 °C T j: At V CE= 125 °C V GE = 150 °C I C= Figure 11. FWD 400 V 15/0 V 6 A 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical reverse recovery current as a function of IGBT turn on gate resistor I RRM = f(I C) I RRM = f(R gon) 16 I rrM (A) I rrM (A) Typical reverse recovery current as a function of collector current IRRM 18 15 12 12 IRRM IRRM 9 8 6 IRRM 4 3 0 0 0 2 4 6 8 10 0 12 32 64 96 128 At V CE= 400 V V GE = 15/0 V R gon = 32 Ω Copyright Vincotech 25 °C T j: 160 RGon (Ω) I C (A) At V CE= 125 °C V GE = 150 °C I C= 22 400 V 15/0 V 6 A 25 °C T j: 125 °C 150 °C 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet PFC Switching Definitions Figure 13. FWD Figure 14. FWD Typical rate of fall of forward and reverse recovery current as a function of dI 0/dt ,dI rec/dt = f(I c) IGBT turn on gate resistor 2000 direc / dt (A/µ µ s) di rec / dt (A/µs) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current dI0/dt dIrec/dt 1600 3500 dI0/dt dIrec/dt 3000 2500 1200 2000 1500 800 1000 400 500 0 0 0 2 4 6 8 10 0 12 32 64 At V CE= 400 V V GE = 15/0 V At V GE = R gon = 32 Ω I C= Figure 15. 96 128 160 RGon(Ω) I C (A) V CE= 400 V 15/0 V 6 A IGBT Reverse bias safe operating area I C = f(V CE) IC (A) 35 MODULE 25 Ic CHIP IC MAX 30 VCE MAX Ic 20 15 10 5 0 0 100 200 300 400 500 600 700 VCE(V) At 175 °C R gon = Tj = 32 Ω R goff = 32 Ω Copyright Vincotech 23 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet PFC Switching Definitions General conditions Figure 1. Tj = 125 °C R gon R goff = = 32 Ω 32 Ω IGBT Turn-of f Swit ching Wavef orms & def init ion of t doff , t Eoff (t Eoff = int egrat ing time f or Eoff) Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (t Eon = integrat ing time f or Eon) 125 350 tdoff % IC % VCE 300 100 VCE 90% VGE 90% 250 75 200 IC VGE 50 150 tEoff VCE 100 25 tdon IC 1% 0 0 -25 -0,2 -0,1 0 0,1 VGE 50 0,2 VGE 10% -50 2,95 0,3 IC 10% VCE 3% tEon 3 3,05 3,1 time (us) V GE (0%) = 0 V V GE (0%) = 0 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 400 V V C (100%) = 400 V I C (100%) = 6 A I C (100%) = 6 A t doff = 0,191 µs t don = 0,017 µs t E off = Figure 3. 0,235 µs t E on = Figure 4. 0,108 µs IGBT Turn-off Switching Waveforms & definition of tf 3,15 IGBT Turn-on Switching Waveforms & definition of tr 350 125 % time(us) % fitted IC IC 300 VCE 100 250 IC 90% 75 200 IC 60% 50 150 VCE IC 40% 100 25 tr IC 90% 50 IC10% 0 -25 0,05 tf 0,1 0,15 IC 10% 0 0,2 -50 2,95 0,25 3 3,05 time (us) 3,15 time(us) V C (100%) = 400 V V C (100%) = 400 V I C (100%) = 6 A I C (100%) = 6 A tf = 0,004 µs tr = 0,011 µs Copyright Vincotech 3,1 24 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet PFC Switching Definitions Figure 5. IGBT Turn-off Switching Waveforms & definition of tEof f Figure 6. IGBT Turn-on Switching Waveforms & definition of tEon 125 250 % % IC 1% Eoff 100 Pon 200 Poff 75 150 50 100 25 Eon 50 VGE 90% VCE 3% VGE 10% 0 tEon 0 tEoff -25 -0,1 0 0,1 0,2 -50 2,95 0,3 3 3,05 P off (100%) = 2,37 kW P on (100%) = 2,37 E off (100%) = 0,06 mJ E on (100%) = 0,21 mJ t E off = 0,24 µs t E on = 0,11 µs Figure 7. 3,1 3,15 time(us) time (us) kW FWD Turn-off Switching Waveforms & definition of trr 150 Id % 100 trr 50 0 fitted Vd IRRM 10% -50 -100 -150 IRRM 90% -200 IRRM 100% -250 2,95 3 3,05 3,1 3,15 time(us) V d (100%) = 400 V I d (100%) = 6 A I RRM (100%) = -13 A t rr = 0,064 µs Copyright Vincotech 25 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet PFC Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Q rr) 100 FWD 150 150 % Figure 9. Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec ) Id % Qrr Prec 125 tQrr 50 Erec 100 0 tErec 75 -50 50 -100 25 -150 0 -200 -250 2,95 3 3,05 3,1 3,15 -25 3,2 3 time(us) 3,05 3,1 3,2 time(us) I d (100%) = 6 A P rec (100%) = 2,37 Q rr (100%) = 0,51 µC E rec (100%) = 0,10 mJ t Q rr = 0,16 µs t E rec = 0,16 µs Copyright Vincotech 3,15 26 kW 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Ordering Code & Marking Version Ordering Code in DataMatrix as in packaging barcode as without thermal paste 17mm housing 10-0B06PPA004RC-L022A09 L022A09 L022A09 NN-NNNNNNNNNNNNNN TTTTTTT WWYY UL Vinco LLLLL SSSS Text Datamatrix Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTT WWYY UL Vinco LLLLL SSSS Serial Date code SSSS WWYY Type TTTT-TTT Lot number LLLLL Outline Pin table [mm] Pin X Y Func tion 1 24,7 0 DC-Rec t 2 21,7 0 DC-PFC 3 18,7 0 G27 4 15 0 DC-3 5 12 0 G15 6 9 0 DC-2 7 6 0 G13 8 3 0 DC-1 9 0 0 G11 10 0 3 Therm2 11 12 0 0 5,8 10,8 Therm1 G12 13 0 13,8 Ph1 14 5,7 13,8 G14 15 8,7 13,8 Ph2 16 14,4 13,8 Ph3 17 14,4 10,8 G16 18 19,7 9,3 DC+ 19 22,9 13,8 PFC 20 27,9 13,8 ACIn1 21 27,9 6,95 ACIn2 22 23,05 6,95 DC+Rect Copyright Vincotech 27 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Pinout Identification ID Component Voltage Technology Current Function T11-T16 IGBT 600V 4A Inverter switch T27 IGBT 650V 15A PFC Switch D27 FWD 650V 15A PFC Diode D47 Diode 650V 6A PFC Switch Protection Diode D31-D34 Diode 1600V 7A Rectifier Diode Rt NTC - - Thermistor Copyright Vincotech 28 Comment 07 Apr. 2016 / Revision 3 10-0B06PPA004RC-L022A09 datasheet Packaging instruction Standard packaging quantity (SPQ) 200 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 0 B packages see vincotech.com website. Document No.: Date: Modification: Pages 10-0B06PPA004RC-L022A09-D3-14 07 Apr. 2016 Inverter Switch SOA added 8 DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 29 07 Apr. 2016 / Revision 3