248 KB

S6E2D5 Series
32-bit ARM® Cortex®-M4F based Microcontroller
Data Sheet
Errata Sheet
Page
Item
Original document code: DS709-00021-1v0-E
Rev. 1.0 June 25, 2015
64
9. Handling
Devices
"Sub Crystal Oscillator" should be added as indicated by the shading below.
■Surface mount type
Size:
Load capacitance:
Load capacitance:
■Lead type
Load capacitance:
Load capacitance:
Publication Number S6E2D5_DS709-00021-1v0-E-DE
CONFIDENTIAL
Description
More than 3.2 mm × 1.5 mm
Approximately 6 pF to 7 pF
When the Standard setting (CCS/CCB=11001110)
Approximately 4 pF to 7 pF
When the low power setting (CCS/CCB=00000100)
Approximately 6 pF to 7 pF
When the Standard setting (CCS/CCB=11001110)
Approximately 4 pF to 7 pF
When the low power setting (CCS/CCB=00000100)
Revision 2.0
Issue Date September 16, 2015
E R R A T A
Page
92
Item
14.3.1 Current
Rating
S H E E T
Description
Table 14-10 should be added as indicated by the shading below.
Table 14-10 Typical and Maximum Current Consumption in Deep Standby Stop Mode, Deep Standby
RTC Mode and VBAT
Parameter
Symbol
Pin
Name
Conditions
Value
Frequency
(MHz)
Typ
Max
0.009
0.032
Unit
μA
Remarks
*3, *4, *5
TA=+25°C
RTC stop
-
0.994
μA
*3, *4, *5
TA=+85°C
-
1.491
μA
*3, *4, *5
TA=+105°C
1.0
1.636
μA
TA=+25°C
Power
RTC *6
supply
*3, *4
ICCVBAT
VBAT
-
-
2.828
μA
operation
*3, *4
TA=+85°C
current
-
4.242
μA
*3, *4
TA=+105°C
0.7
1.153
μA
*3, *4
TA=+25°C
RTC *7
-
2.277
μA
operation
*3, *4
TA=+85°C
-
3.416
μA
*3, *4
TA=+105°C
*1: VCC=3.3 V
*2: VCC=3.6 V
*3: When all ports are fixed.
*4: When LVD is OFF
*5: When sub oscillation is OFF
*6: When using the crystal oscillator of 32 kHz (including the current consumption of the oscillation circuit)
When the Standard setting (CCS/CCB=11001110)
*7: When using the crystal oscillator of 32 kHz (including the current consumption of the oscillation circuit)
When the low power setting (CCS/CCB=00000100)
2
CONFIDENTIAL
S6E2D5_DS709-00021-1v0-E-DE2, September 16, 2015
E R R A T A
Page
176
Item
15. Ordering
Information
S H E E T
Description
Ordering Information should be corrected as indicated by the shading below.
(Error)
Part Number
Package
S6E2D55G0AGV20000
Plastic・LQFP (0.5 mm pitch), 120 pin
S6E2D55GJAMV20000
(FPT-120P-M21)
S6E2D55J0AGV20000
S6E2D55G0AGB30000
S6E2D55G0AGZ20000
Plastic・LQFP (0.5 mm pitch), 176 pin
(FPT-176P-M07)
Plastic・PFBGA (0.5 mm pitch), 161 pin
(FDJ161)
Plastic・Ex-LQFP (0.5 mm pitch), 120 pin
(LEM120)
(Correct)
Part Number
S6E2D55G0AGV20000
Plastic・LQFP (0.5 mm pitch), 120 pin
S6E2D55GJAMV20000
(FPT-120P-M21)
S6E2D55J0AGV20000
S6E2D55G0AGB30000
S6E2D55G0AGE20000
September 16, 2015, S6E2D5_DS709-00021-1v0-E-DE2
CONFIDENTIAL
Package
Plastic・LQFP (0.5 mm pitch), 176 pin
(FPT-176P-M07)
Plastic・PFBGA (0.5 mm pitch), 161 pin
(FDJ161)
Plastic・Ex-LQFP (0.5 mm pitch), 120 pin
(LEM120)
3
E R R A T A
Page
Rev. 2.0
11
Item
S H E E T
Description
September 16, 2015
2. Features
Note should be added as indicated by the shading below.
(Error)
GDC Unit
 Controller for external graphics display
 Accelerator for 2D block image transfer (blit) operations
 Embedded SRAM video memory
 High-Speed Quad SPI (Serial Peripheral Interface for external memory extensions)
 SDRAM interface for external memory extensions
 HBI (Hyper Bus Interface) interface for external memory extensions
 Maximum core system clock frequency : 160 MHz
(Correct)
GDC Unit
 Controller for external graphics display
 Accelerator for 2D block image transfer (blit) operations
 Embedded SRAM video memory
 High-Speed Quad SPI (Serial Peripheral Interface for external memory extensions)
 SDRAM interface for external memory extensions
 HBI (Hyper Bus Interface) interface for external memory extensions
 Maximum core system clock frequency : 160 MHz
Note:
−
User can leverage the internal VRAM and external HyperRAM as a graphics memory
allowed to be written by GDC.
15
4. Packages
“Packages” should be corrected as indicated by the shading below.
(Error)
Product Name
Package
S6E2D55G0A
LQFP:
FPT-120P-M21 (0.5 mm pitch)

LQFP:
FPT-176P-M07 (0.5 mm pitch)
-
PFBGA:
FDJ161 (0.5 mm pitch)
Ex_LQFP(TEQFP): LEM120 (0.5 mm pitch)

S6E2D55J0A
-
S6E2D55GJA


-
-
-
S6E2D55J0A
S6E2D55GJA

: Supported
(Correct)
Product Name
Package
LQFP:
FPT-120P-M21 (0.5 mm pitch)

LQFP:
FPT-176P-M07 (0.5 mm pitch)
-
FBGA:
FDJ161 (0.5 mm pitch)
Ex_LQFP(TEQFP): LEM120 (0.5 mm pitch)
: Supported
4
CONFIDENTIAL
S6E2D55G0A
-


-

-
-

-
-
: In development
S6E2D5_DS709-00021-1v0-E-DE2, September 16, 2015
E R R A T A
Page
16, 18
Item
5. Pin
Assignment
Description
Signal name should be corrected as below.
(Error) GE_SPCSX_0
(Error) GE_HBCSX_0
(Error) GE_HBCSX_1
21, 23,
48
6. Pin
Descriptions
10. Block
Diagram
(Correct) GE_SPCSX0
(Correct) GE_HBCSX0
(Correct) GE_HBCSX1
Signal name should be corrected as below.
(Error) GE_SPCSX_0
(Error) GE_HBCSX_0
(Error) GE_HBCSX_1
67
S H E E T
(Correct) GE_SPCSX0
(Correct) GE_HBCSX0
(Correct) GE_HBCSX1
Signal name should be corrected as below.
(Error) GE_SPCSX_0
(Correct) GE_SPCSX0
(Error) GE_HBCSX_0/1 (Correct) GE_HBCSX0/1
93
14.3 DC
Characteristics
“VFLASH memory Standby current” should be corrected as indicated by the shading below.
(Error)
Parameter
Symbol
Pin
name
VFLASH memory
Standby current
VFLASH memory
Read current
ICCVFLASH
VCC
Conditions
Value
Min
Typ
Max
At Standby
-
15
25
At Read
-
9
14
13
20
20
25
VFLASH memory
At
write/erase current
Write/Erase
-
Unit
Remarks
μA
mA
40MHz
80MHz
mA
(Correct)
Parameter
Symbol
Pin
name
VFLASH memory
Standby current
VFLASH memory
Read current
162,
14.4 AC
161, 162 Characteristics
ICCVFLASH
Value
Min
Typ
Max
At Standby
-
15
35
At Read
-
9
14
13
20
20
25
VFLASH memory
At
write/erase current
Write/Erase
-
Unit
Remarks
μA
mA
40MHz
80MHz
mA
Signal name should be corrected as below.
(Error) GE_SPCSX_0
(Error) GE_HBCSX_0
(Error) GE_HBCSX_1
September 16, 2015, S6E2D5_DS709-00021-1v0-E-DE2
CONFIDENTIAL
VCC
Conditions
(Correct) GE_SPCSX0
(Correct) GE_HBCSX0
(Correct) GE_HBCSX1
5