S6E2D5 Series 32-bit ARM® Cortex®-M4F based Microcontroller Data Sheet Errata Sheet Page Item Original document code: DS709-00021-1v0-E Rev. 1.0 June 25, 2015 64 9. Handling Devices "Sub Crystal Oscillator" should be added as indicated by the shading below. ■Surface mount type Size: Load capacitance: Load capacitance: ■Lead type Load capacitance: Load capacitance: Publication Number S6E2D5_DS709-00021-1v0-E-DE CONFIDENTIAL Description More than 3.2 mm × 1.5 mm Approximately 6 pF to 7 pF When the Standard setting (CCS/CCB=11001110) Approximately 4 pF to 7 pF When the low power setting (CCS/CCB=00000100) Approximately 6 pF to 7 pF When the Standard setting (CCS/CCB=11001110) Approximately 4 pF to 7 pF When the low power setting (CCS/CCB=00000100) Revision 2.0 Issue Date September 16, 2015 E R R A T A Page 92 Item 14.3.1 Current Rating S H E E T Description Table 14-10 should be added as indicated by the shading below. Table 14-10 Typical and Maximum Current Consumption in Deep Standby Stop Mode, Deep Standby RTC Mode and VBAT Parameter Symbol Pin Name Conditions Value Frequency (MHz) Typ Max 0.009 0.032 Unit μA Remarks *3, *4, *5 TA=+25°C RTC stop - 0.994 μA *3, *4, *5 TA=+85°C - 1.491 μA *3, *4, *5 TA=+105°C 1.0 1.636 μA TA=+25°C Power RTC *6 supply *3, *4 ICCVBAT VBAT - - 2.828 μA operation *3, *4 TA=+85°C current - 4.242 μA *3, *4 TA=+105°C 0.7 1.153 μA *3, *4 TA=+25°C RTC *7 - 2.277 μA operation *3, *4 TA=+85°C - 3.416 μA *3, *4 TA=+105°C *1: VCC=3.3 V *2: VCC=3.6 V *3: When all ports are fixed. *4: When LVD is OFF *5: When sub oscillation is OFF *6: When using the crystal oscillator of 32 kHz (including the current consumption of the oscillation circuit) When the Standard setting (CCS/CCB=11001110) *7: When using the crystal oscillator of 32 kHz (including the current consumption of the oscillation circuit) When the low power setting (CCS/CCB=00000100) 2 CONFIDENTIAL S6E2D5_DS709-00021-1v0-E-DE2, September 16, 2015 E R R A T A Page 176 Item 15. Ordering Information S H E E T Description Ordering Information should be corrected as indicated by the shading below. (Error) Part Number Package S6E2D55G0AGV20000 Plastic・LQFP (0.5 mm pitch), 120 pin S6E2D55GJAMV20000 (FPT-120P-M21) S6E2D55J0AGV20000 S6E2D55G0AGB30000 S6E2D55G0AGZ20000 Plastic・LQFP (0.5 mm pitch), 176 pin (FPT-176P-M07) Plastic・PFBGA (0.5 mm pitch), 161 pin (FDJ161) Plastic・Ex-LQFP (0.5 mm pitch), 120 pin (LEM120) (Correct) Part Number S6E2D55G0AGV20000 Plastic・LQFP (0.5 mm pitch), 120 pin S6E2D55GJAMV20000 (FPT-120P-M21) S6E2D55J0AGV20000 S6E2D55G0AGB30000 S6E2D55G0AGE20000 September 16, 2015, S6E2D5_DS709-00021-1v0-E-DE2 CONFIDENTIAL Package Plastic・LQFP (0.5 mm pitch), 176 pin (FPT-176P-M07) Plastic・PFBGA (0.5 mm pitch), 161 pin (FDJ161) Plastic・Ex-LQFP (0.5 mm pitch), 120 pin (LEM120) 3 E R R A T A Page Rev. 2.0 11 Item S H E E T Description September 16, 2015 2. Features Note should be added as indicated by the shading below. (Error) GDC Unit Controller for external graphics display Accelerator for 2D block image transfer (blit) operations Embedded SRAM video memory High-Speed Quad SPI (Serial Peripheral Interface for external memory extensions) SDRAM interface for external memory extensions HBI (Hyper Bus Interface) interface for external memory extensions Maximum core system clock frequency : 160 MHz (Correct) GDC Unit Controller for external graphics display Accelerator for 2D block image transfer (blit) operations Embedded SRAM video memory High-Speed Quad SPI (Serial Peripheral Interface for external memory extensions) SDRAM interface for external memory extensions HBI (Hyper Bus Interface) interface for external memory extensions Maximum core system clock frequency : 160 MHz Note: − User can leverage the internal VRAM and external HyperRAM as a graphics memory allowed to be written by GDC. 15 4. Packages “Packages” should be corrected as indicated by the shading below. (Error) Product Name Package S6E2D55G0A LQFP: FPT-120P-M21 (0.5 mm pitch) LQFP: FPT-176P-M07 (0.5 mm pitch) - PFBGA: FDJ161 (0.5 mm pitch) Ex_LQFP(TEQFP): LEM120 (0.5 mm pitch) S6E2D55J0A - S6E2D55GJA - - - S6E2D55J0A S6E2D55GJA : Supported (Correct) Product Name Package LQFP: FPT-120P-M21 (0.5 mm pitch) LQFP: FPT-176P-M07 (0.5 mm pitch) - FBGA: FDJ161 (0.5 mm pitch) Ex_LQFP(TEQFP): LEM120 (0.5 mm pitch) : Supported 4 CONFIDENTIAL S6E2D55G0A - - - - - - : In development S6E2D5_DS709-00021-1v0-E-DE2, September 16, 2015 E R R A T A Page 16, 18 Item 5. Pin Assignment Description Signal name should be corrected as below. (Error) GE_SPCSX_0 (Error) GE_HBCSX_0 (Error) GE_HBCSX_1 21, 23, 48 6. Pin Descriptions 10. Block Diagram (Correct) GE_SPCSX0 (Correct) GE_HBCSX0 (Correct) GE_HBCSX1 Signal name should be corrected as below. (Error) GE_SPCSX_0 (Error) GE_HBCSX_0 (Error) GE_HBCSX_1 67 S H E E T (Correct) GE_SPCSX0 (Correct) GE_HBCSX0 (Correct) GE_HBCSX1 Signal name should be corrected as below. (Error) GE_SPCSX_0 (Correct) GE_SPCSX0 (Error) GE_HBCSX_0/1 (Correct) GE_HBCSX0/1 93 14.3 DC Characteristics “VFLASH memory Standby current” should be corrected as indicated by the shading below. (Error) Parameter Symbol Pin name VFLASH memory Standby current VFLASH memory Read current ICCVFLASH VCC Conditions Value Min Typ Max At Standby - 15 25 At Read - 9 14 13 20 20 25 VFLASH memory At write/erase current Write/Erase - Unit Remarks μA mA 40MHz 80MHz mA (Correct) Parameter Symbol Pin name VFLASH memory Standby current VFLASH memory Read current 162, 14.4 AC 161, 162 Characteristics ICCVFLASH Value Min Typ Max At Standby - 15 35 At Read - 9 14 13 20 20 25 VFLASH memory At write/erase current Write/Erase - Unit Remarks μA mA 40MHz 80MHz mA Signal name should be corrected as below. (Error) GE_SPCSX_0 (Error) GE_HBCSX_0 (Error) GE_HBCSX_1 September 16, 2015, S6E2D5_DS709-00021-1v0-E-DE2 CONFIDENTIAL VCC Conditions (Correct) GE_SPCSX0 (Correct) GE_HBCSX0 (Correct) GE_HBCSX1 5