Migrate Macronix GL-E to S29GL-S AN

AN98579
Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S
AN98579 details how to migrate designs from Macronix 128 Mbit MX29GL128E, 256 Mbit MX29GL256E, and 512 Mbit
MX29GL512E flash memory devices to Cypress 128 Mbit 29GL128S, 256 Mbit S29GL256S, and 512 Mbit S29GL512S
MirrorBit® flash memory devices, respectively.
1
Introduction
This application note details how to migrate designs from Macronix 128 Mbit MX29GL128E, 256 Mbit
MX29GL256E, and 512 Mbit MX29GL512E flash memory devices to Cypress 128 Mbit 29GL128S, 256 Mbit
S29GL256S, and 512 Mbit S29GL512S MirrorBit flash memory devices, respectively. The S29GL128S /
S29GL256S / S29GL512S devices are 3.0 volt-only Page Mode flash memory manufactured with 65 nm MirrorBit
Eclipse™ technology.
Cypress GL-S flash family devices are compatible with the Macronix 128 Mbit MX29GL128E, 256 Mbit
MX29GL256E, and 512 Mbit MX29GL512E devices with respect to:
2

Sector (or block) architecture,

JEDEC standard compliant software command set.
Feature Comparison
Table 1 shows a feature comparison summary of the Macronix 512 Mbit MX29GL512E flash memory to the
Cypress 512 Mbit S29GL512S MirrorBit flash family device.
Table 1. Feature Comparison — Macronix 512 Mbit MX29GL512E to Cypress 512 Mbit S29GL512S (Sheet 1 of 2)
Cypress
Macronix
S29GL512S
MX29GL512E
VCC
2.7~3.6V
2.7~3.6V
VIO
1.65~3.6V
N/A
Random
100 ns (2.7 to 3.6V)
110 ns (2.7 to 3.6V)
110 ns (Low VIO)
120 ns (Low VIO)
100 ns (3.0 to 3.6V)
110 ns (2.7 to 3.6V)
Page
15 ns (2.7 to 3.6V)
20 ns (2.7 to 3.6V)
25 ns (Low VIO)
30 ns (Low VIO)
25 ns
Test Condition (Output Load Capacitance)
30 pF
30 pF
Read Performance
Up to 98.5 MB/s
Up to 58.2 MB/s
Bus width
only x16
x8/x16
Sector
Uniform 128 kB
Uniform 128 kB
VCC
Access time
Program
256 word (512 Byte)
32 word (64 Byte)
Read
16 word (32 Byte)
8 word (16 Byte)
Data#Polling or Status Register
Data#Polling and Status Register
Data#Polling
Unlock Bypass
No (Note 1)
Yes
Page Size
Multi-sector Erase
No (Note 1)
Yes
Blank Check
Yes
No
OTP
512 Byte (256 Word) x 2
256 Byte (128 Word)
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Document No. 001-98579 Rev. *A
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Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S
Table 1. Feature Comparison — Macronix 512 Mbit MX29GL512E to Cypress 512 Mbit S29GL512S (Sheet 2 of 2)
Cypress
Macronix
S29GL512S
MX29GL512E
Software
Password (64 bit)
Persistent Protection (Note 2)
Password (64 bit)
Persistent Protection (Note 2)
Hardware
WP# (Lowest or Highest address
sector)
WP# (Lowest or Highest address
sector)
56-Pin TSOP
64-Ball BGA
56-Pin TSOP
64-Ball BGA
70-Pin SSOP
Protection
Package
Notes:
1. Removed per legacy features.
2. Persistent Protection and Solid Write Protection are same function.
Table 2 shows a feature comparison summary of the Macronix 256 Mbit MX29GL256E and 128 Mbit
MX29GL128E flash memory to the Cypress 256 Mbit S29GL256S and 128 Mbit S29GL128S MirrorBit flash family
devices.
Table 2. Feature Comparison — Macronix 256 Mbit MX29GL256E and 128Mbit MX29GL128E to
Cypress 256 Mbit S29GL256S, and 128 Mbit S29GL128S
Cypress
Macronix
S29GL256S/128S
MX29GL256E/128E
VCC
2.7~3.6V
2.7~3.6V
VIO
1.65~3.6V
1.65~3.6V
Random
90 ns (2.7 to 3.6V)
100 ns (2.7 to 3.6V)
100 ns (Low VIO)
110 ns (Low VIO)
90 ns (3.0 to 3.6V)
100 ns (2.7 to 3.6V)
110 ns (Low VIO)
Page
15 ns (2.7 to 3.6V)
20 ns (2.7 to 3.6V)
25 ns (Low VIO)
30 ns (Low VIO)
25 ns (2.7~3.6V)
30 ns (Low VIO)
Test Condition (Output Load Capacitance)
30 pF
30 pF
Read Performance
Up to 101.6 MB/s
Up to 60.4 MB/s
Bus width
only x16
x8/x16
VCC
Access time
Sector
Page Size
Program
Read
Data#Polling or Status Register
Uniform 128 kB
Uniform 128 kB
256 word (512 Byte)
32 word (64 Byte)
16 word (32 Byte)
8 word (16 Byte)
Data#Polling and Status Register
Data#Polling
Unlock Bypass
No (Note 1)
Yes
Multi-sector Erase
No (Note 1)
Yes
Blank Check
Yes
No
OTP
512 Byte (256 Word) x2
256 Byte (128 Word) x2
Software
Password (64 bit)
Persistent Protection (Note 2)
Password (64 bit)
Persistent Protection (Note 2)
Hardware
WP# (Lowest or Highest address
sector)
WP# (Lowest or Highest address
sector)
56-Pin TSOP
64-Ball BGA
56-Pin TSOP
64-Ball BGA
70-Pin SSOP
Protection
Package
Notes:
1. Removed per legacy features.
2. Persistent Protection and Solid Write Protection are same function.
Table 3 shows a comparison between Macronix and Cypress flash memory Erase and Program Performance.
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Document No. 001-98579 Rev. *A
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Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S
Table 3Erase and Program Performance
Cypress
Macronix
S29GL-S
Word w/o ACC
Word w/ACC
Program
MX29GL-E
Typ
Max
Typ
Max
125 µs
400 µs
11 µs
360 µs
N/A
11 µs
Write Buffer 2 Byte w/o ACC
125 µs
Write Buffer 32 Byte w/o ACC
160 µs
Write Buffer 64 Byte w/o ACC
175 µs
Write Buffer 128 Byte w/o ACC
198 µs
Write Buffer 256 Byte w/o ACC
239 µs
Write Buffer 512 Byte w/o ACC
340 µs
200 µs
750 µs
Write Buffer 64 Byte w/ACC
100 µs
Program performance w/o ACC
1.5 MB/s (Typ)
Sector Erase
Erase
0.2s
320 kB/s (Typ)
1.1s
0.6s
5s
Erase performance (Typ)
655 kB/s (Note 1)
213 kB/s (Note 2)
Erase performance (Worst Case)
119 kB/s (Note 1)
25.6 kB/s (Note 2)
Notes:
1. Erase performance of S29GL-S is included pre-program time.
2. Erase performance of MX29GL-E is not included pre-program time.
3
DC Specification
The S29GL-S and MX29GL-E have primarily compatible specifications. Differences in DC Characteristics
between the devices are highlighted in Table 4. The potential impact of any parameter specification differences
should be evaluated and validated. Refer to the respective Macronix MX29GL-E and Cypress S29GL-S data
sheets to verify the most up to date specifications.
Table 4. DC Specification
Cypress
Macronix
S29GL-S
Min
Typ
MX29GL128/256E
Max
Min
Typ
MX29GL512E
Max
Min
Typ
Max
Input Load Current
+0.02 µA
±1.0 µA
± 2.0 µA
± 4.0 µA
Output Leakage Current
+0.02 µA
±1.0 µA
± 1.0 µA
± 1.0 µA
VCC Active Read Current (5 MHz)
55 mA
60 mA
30 mA
50 mA
30 mA
50 mA
VCC Intra-Page Read Current
9 mA
25 mA
6 mA
20 mA
6 mA
20 mA
VCC Active Erase/Program Current
45 mA
100 mA
26 mA
30 mA
26 mA
30 mA
VCC Standby Current
70 µA
100 µA
30 µA
100 µA
60 µA
200 µA
VCC Reset Current
10 mA
20 mA
30 µA
100 µA
60 µA
200 µA
Automatic Sleep Mode
3 mA
6 mA
30 µA
100 µA
60 µA
200 µA
VCC Current during power up
53 mA
80 mA
Input Low Voltage
-0.5V
0.2 x VIO
-0.1V
0.3 x VIO
-0.1V
0.3 x VIO
Input High Voltage
0.7 x VIO
VIO +
0.4V
0.7 x VIO
VIO +
0.3V
0.7 x VIO
VIO +
0.3V
0.15 x
VIO
Output Low Voltage
Output High Voltage
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0.85 x
VIO
0.45V
0.85 x
VIO
Document No. 001-98579 Rev. *A
0.45V
0.85 x
VIO
3
Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S
4
Device ID
This section provides a comparison between Macronix and Cypress flash memory Device ID.
The GL-S flash only supports Autoselect Register access via software command sets. Macronix GL-E supports
Autoselect Register access via software command sets and high voltage method which requires VID (nominally
12V) applied to Address input A9.
Table 5. Device ID
Address
S29GL512S
MX29GL512E
0001h
00C2h
Word1
(Base)+01h
227Eh
227Eh
Word2
(Base)+0Eh
2223h
2223h
Word3
(Base)+0Fh
2201h
2201h
Cypress
Macronix
Address
S29GL256S
MX29GL256E
Manufacturer ID
Device ID
(Base)+00h
0001h
00C2h
Cycle1
(Base)+01h
227Eh
227Eh
Cycle2
(Base)+0Eh
2222h
2222h
Cycle3
(Base)+0Fh
2201h
2201h
Cypress
Macronix
Address
S29GL128S
MX29GL128E
(Base)+00h
0001h
00C2h
Cycle1
(Base)+01h
227Eh
227Eh
Cycle2
(Base)+0Eh
2221h
2221h
Cycle3
(Base)+0Fh
2201h
2201h
Manufacturer ID
Device ID
5
Macronix
(Base)+00h
Manufacturer ID
Device ID
Cypress
Program Suspend / Resume
There are specification differences at program Suspend Resume Command and Specification between Macronix
and Cypress flash memory.
Table 6. Program Suspend / Resume Specification
Cypress
Macronix
S29GL-S
MX29GL-E
Typ
Erase
Erase Suspend Latency
Erase Suspend
Erase Resume to next Erase Suspend
Program
Program Suspend Latency
Program Suspend Program Resume to next Program
Suspend
Max
40 µs
100 µs
Max
20 µs
400 µs
40 µs
100 µs
Typ
Not defined
5 µs
GL-S has two commands for Program resume: the legacy combined Erase / Program Suspend and resume
command (B0h/30h command code), and the separate Program Suspend and Resume command
(51h/50h command code).
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Document No. 001-98579 Rev. *A
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Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S
Table 7. Program Suspend / Resume Command
6
Cypress
Macronix
S29GL-S
MX29GL-E
Program/Erase Suspend
B0h
B0h
Program/Erase Resume
30h
30h
Program Suspend Enhanced Method
51h
N/A
Program suspend Enhanced Method
50h
N/A
Power-Up Timing
This section provides a comparison between Macronix and Cypress flash memory power up timing.
Table 8. Power-up Timing
7
Cypress
Macronix
S29GL-S
MX29GL-E
Min
Min
VCC Setup Time to first access
300 µs
500 µs
VIO Setup Time to first access
300 µs
RESET# Low to CE# Low during embedded operation
35 µs
RESET# Pulse Width during embedded operation
200 ns
10 µs
Time between RESET# (High) and CE# (Low)
50 ns
200 ns
20 µs
Packaging
Several of the pin definitions have changed between Macronix and Cypress flash memory, see Table 9.

WP#/ACC: GL-S does not support High Voltage Accelerated Programming, ACC is removed. No difference
on WP# function.

BYTE#: GL-S supports only x16 data bus width, BYTE# is not required. This pin is not connected internally
and can float or be connected to VCC or GND.

DQ15/A-1: GL-S supports only x16 data bus width, A-1 input is not required.
Table 9. Pin-out Difference
Cypress
Macronix
S29GL-S
MX29GL-E
16
WP# (Note 1)
WP#/ACC
28
DNU (Note 2)
NC (Note 3)
51
DQ15
Q15/A-1
53
RFU (Note 4)
BYTE#
B4
WP# (Note 1)
WP#/ACC
E1
DNU (Note 2)
NC (Note 3)
F7
RFU (Note 4)
BYTE#
G7
DQ15
Q15/A-1
Pin or Ball
TSOP Package
BGA Package
Notes:
1. Voltage cannot exceed VIO + 0.4V on WP# input for GL-S.
2. DNU = Do Not Use, must remain floating.
3. NC = Not Connected, should remain floating, okay to be pulled low or high.
4. RFU = Reserved for Future use, not connected internally on GL-S, okay to pull high.
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Document No. 001-98579 Rev. *A
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Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S
8
References

Cypress GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family Datasheet

Macronix MX29GL512E H/L Datasheet, P/N PM1524

Macronix MX29GL256E Datasheet, P/N PM1499

Macronix MX29GL128E Datasheet, P/N PM1500
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Document No. 001-98579 Rev. *A
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Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S
Document History Page
Document Title: AN98579 - Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S
Document Number: 001-98579
Rev.
ECN No.
Orig. of
Change
Submission
Date
Description of Change
**
–
–
10/06/2011
Initial version
*A
4959012
MSWI
10/12/2015
Updated in Cypress template
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Document No. 001-98579 Rev. *A
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Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S
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