1014 - 2 2 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55LT, STYLE 1 The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF Output Power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes Input prematching and utilizes gold metalization and diffused ballasting to provide high reliagility and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 9.7 Watts 50 Volts 3.5 Volts 0.5 A - 65 to +150oC +200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pin Pg ηc VSWR1 Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance BVces BVebo Icbo hFE Cob θjc Collector to Emitter Breakdown Emitter to Base Breakdown Collector to Base Current Current Gain Output Capacitance Thermal Resistance TEST CONDITIONS F =1000-1400 MHz Vcb = 28 Volts MIN TYP MAX 2 0.35 7.5 45 As Above Pout = 2 Watts Watt Watt dB % 10:1 Ic = 20 mA Ie = 5 mA Vcb = 28 Volts 50 3.5 Vce = 28 V, Ic = 100 mA Vcb = 25 V, f = 1 MHz 10 Tc = 25oC UNITS 0.5 100 4.5 18 Volts Volts mA pF C/W o Rev B, Jan 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.