1000MP 0.6 Watts, 18 Volts 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW The 1000MP is a COMMON EMITTER transistor capable of providing 0.6 Watt of Class A, RF output power to 1150 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25°C 5.3 Maximum Voltage and Current 45 Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) 3.5 Collector Current (Ic) 300 Maximum Temperatures Storage Temperature -40 to +150 Operating Junction Temperature +200 W V V mA °C °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS Pout Pin Pg Ft Power Output Power Input Power Gain Transition Frequency VSWR Load Mismatch Tolerance TEST CONDITIONS MIN F = 1150 MHz Vcc = 18 Volts 0.6 TYP MAX 0.05 10.8 3.7 UNITS W W dB GHz 10:1 FUNCTIONAL CHARACTERISTICS @ 25°C Emitter to Base Breakdown BVebo BVcbo Collector to Base Breakdown Ices Collector to Emitter Leakage hFE DC – Current Gain Cob Capacitance 1 Thermal Resistance θjc Note 1: At rated output power Ie = 1 mA Ic = 1 mA Vce=28V Vce = 5V, Ic = 100 mA Vcb = 28V, f =1 MHz 3.5 40 1 V V mA 3.0 33 pF °C/W 15 2.0 Rev A: Updated June 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1000MP CASE DRAWING: Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1000MP TEST CIRCUIT: Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.