N-Channel enhancement mode high density IGBT die
Passivation: Polyimide, 20 um, over Silicon Nitride, .8um
Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.
• Collector/Gate Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach
FEATURES:
•
•
•
•
•
Low Forward Voltage Drop, Low Tail Current
Avalanche and Surge Rated
High Freq. Switching to 20KHz
Ultra Low Leakage Current
RBSOA and SCSOA Rated
• Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix
Fast IGBT Die for Implantable
Cardio Defibrillator
Applications
55
10µs x 4ms double exponential
DESCRIPTION:
•
•
•
MSAGA11F120D
Surge Current (ICM) - Amps
2830 S. Fairview Street
Santa Ana, CA 92704
Phone: (714) 979-8220
Fax: (714) 559-5989
35-50% of
ICM Max
10µs
4000µs
Time - µsec
MAXIMUM RATINGS:
SYMBOL
PARAMETER
VCES
VCGR
VEG
VGE
IC1
IC2
ICM
ICM1
ICM2
ICsurge2
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KΩ )
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Surge Current (10µs x 4ms double exponential, see figure 2)
Pulsed Collector Current ¬ @ TC = 25°C
Pulsed Collector Current ¬ @ TC = 110°C
Surge Current: tp= 2 us (ton= 1.5 µs; toff= 0.5 µs to 50% decay), 10 pulses, duty
cycle= 1:2,500,000 (12 pulses/minute)
Single Pulse Avalanche Energy Total Power Dissipation
Operating and Storage: Junction Temperature Range
EAS
PD
TJ, TSTG
VALUE
UNIT
1200
1200
15
±20
22
11
55
44
22
400
Volts
Volts
Volts
Volts
Amps
Amps
Amps
Amps
Amps
Apk
10
125
-55 to 150
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS:
SYMBOL
CHARACTERISTIC / TEST CONDITIONS
MIN
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA)
1200
RBVCES
Collector-Emitter Reverse Breakdown Voltage® (VGE = 20V, IC = 10mA)
VCE (ON)
ICES
Volts
5.7
Volts
5.5
6.5
Volts
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, TJ = 25°C)
3.1
3.5
Volts
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, TJ = 37°C)
3.5
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, TJ = 125°C)
4
4.5
Volts
Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 25°C)
0.02
10
uA
Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 37°C)
0.07
1000
uA
±100
nA
Gate Threshold Voltage (VCE = VGE, IC = 350µA, TJ = 25°C
4.5
UNIT
Volts
Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 125°C)
IGES
MAX
-15
Gate Threshold Voltage (VCE = VGE, IC = 350µA, TJ = 37°C
VGE(TH)
TYP
Gate-Emitter Leakage Current (VGE = ±25V, VCE =0V)
2
Gate-Emitter Leakage Current (VGE = ±25V, VCE =0V), Tj= 37°C
4
MSC0947.PDF 2/5/99
Volts
uA
nA
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified
MSAGA11F120D
Fast IGBT Die for Implantable
Cardio Defibrillator
Applications
DYNAMIC CHARACTERISTICS:
SYMBOL
CHARACTERISTIC
Cies
Input Capacitance
Coes
TYP
MAX
UNIT
VGE = 0V
600
720
pF
Output Capacitance
VCE = 25V
60
120
pF
Cros
Qg
Reverse Transfer Capacitance
f = 1 MHz
38
55
pF
Total Gate Charge ¯
VGE = 15V
60
nC
Qge
Gate-Emitter Charge
VCC = 0.5VCES
4
nC
Qgc
Gate-Collector ("Miller") Charge
nC
td (on)
IC = IC2
Resistive Switching (25°C)
36
Turn-on Delay Time
35
ns
tr
Rise Time
VGE = 15V, VCC = 0.5VCES
120
ns
td (off)
Turn-off Delay Time
IC = IC2
580
ns
tf
Fall Time
Re = 150Ω
Inductive Switching (25°C)
260
ns
55
110
ns
VCLAMP(PEAK) = 0.5VCES
50
100
ns
VGE = 15V, IC = IC2
380
570
ns
RG = 150Ω , TJ = +25°C
Inductive Switching (125°C)
80
120
ns
40
ns
VCLAMP(PEAK) = 0.5VCES
100
ns
VGE = 15V, IC = IC2
550
700
ns
RG = 150Ω , TJ = +125°C
160
40
ns
1
mJ
4.5
5
S
td (on)
Turn-On Delay Time
tr
Rise Time
td (off)
Turn-off Delay Time
tf
Fall Time
td (on)
Turn-off Delay Time
tr
Rise Time
td (off)
Turn-off Delay Time
(tsv)
tf
(tsi)
Fall Time
(tfv)
TEST CONDITIONS
MIN
(tfi)
Turn-off Switching Energy
Eoff
gfe
Forward Transconductance
VCE =20V, IC = IC2
¬ Repetitive Rating: Pulse width limited by maximum junction temperature.
- IC = IC2, VCC = 50V, RCE = 25Ω , L = 300µH, TJ = 25°C
® TJ = 150°C
¯ See MIL-STD-750 Method 3471
DIE PROBE PARAMETERS (100% TESTS):
SYMBOL
CHARACTERISTIC / TEST CONDITIONS
MIN
TYP
BVCES
RBVCES
VGE(TH)
VCE (ON)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA)
Collector-Emitter Reverse Breakdown Voltage ® (VGE = 15V, IC = 10mA)
Gate Threshold Voltage (VCE = 6.5 V, IC = 350µA, TJ = 25°C
Collector-Emitter On Voltage (VGE = 12V, IC = 1 A, TJ = 25°C)
1200
-15
4.6
1400
30
5.5
1.45
6.5
2.0
ICES
IGES
Collector Cut-off Current (VCE = 1200 V, VGE = 0V, TJ = 25°C)
Gate-Emitter Leakage Current (VGE = ±20 V, VCE =0V)
0.15
5
400
±120
MSC0947.PDF 2/5/99
MAX
UNIT
Volts
uA
nA
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified
MECHANICAL CHARACTERISTICS
55
10µs x 4ms double exponential
Surge Current (ICM) - Amps
TYPICAL SURGE PERFORMANCE
35-50% of
ICM Max
10µs
4000µs
Time - µsec
MSC0947.PDF 2/5/99
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified