MICROSEMI MSAGX75F60A

2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAGX75F60A
Features
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600 Volts
75 Amps
2.7 Volts vce(sat)
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: MSAGX75F60B
high frequency IGBT, low switching losses
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
Maximum Ratings @ 25°°C (unless otherwise specified)
DESCRIPTION
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
Tj= 25°C
Tj=
90°C
Peak Collector Current, pulse width limited by Tjmax,
Safe Operating Area (RBSOA) @ VGE= 15V, L= 30µH (clamped inductive
SYMBOL
MAX.
UNIT
BVCES
600
Volts
BVCGR
VGES
VGEM
IC25
IC90
600
+/-20
+/-30
75
50
Volts
Volts
Volts
Amps
ICM
Imax
200
100
Amps
Amps
PD
Tj
Tstg
θJC
300
-55 to +150
-55 to +150
0.25
Watts
°C
°C
°C/W
load), R G= 2.7Ω, Tj= 125°C, VCE= 0.8 x V CES
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
Mechanical Outline
COLLECTOR
EMITTER
GATE
Datasheet# MSC0272B
MSAGX75F60A
Electrical Parameters @ 25°°C (unless otherwise specified)
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
Gate-to-Emitter Leakage Current
SYMBOL
CONDITIONS
BVCES
VGS = 0 V, I C = 250 µA
VGE(th)
VCE = VGE, IC = 250 µA
VGE = ± 20V DC, VCE = 0
IGES
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current)
Collector-to-Emitter Saturation Voltage (1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
INDUCTIVE LOAD, Tj= 25°°C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Off Energy
INDUCTIVE LOAD, Tj= 125°°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
ICES
VCE(sat)
gfs
VCE =0.8•BVCES
VGE = 0 V
VGE= 15V, I C= 50A
I C= 50A
VCE ≥ 10 V; I C = 50 A
TYP.
MAX
600
25
UNIT
V
2.5
T J = 25°C
T J = 125°C
TJ = 25°C
T J = 125°C
T J = 25°C
T J = 125°C
5.0
±100
±200
200
1000
2.7
2.5
35
V
nA
µA
V
S
Cies
Coes
Cres
VGE = 0 V, V CE = 25 V, f = 1 MHz
4000
340
100
pF
td(on)
tri
td(off)
tfi
Eoff
VGE = 15 V, V CE = 480 V,
IC = 50 A, R G = 2.7 Ω,
L= 100 µH note 2, 3
50
210
200
275
4.8
ns
ns
ns
ns
mJ
td(on)
tri
Eon
td(off)
tfi
Eoff
Qg
Qge
Qgc
VGE = 15 V, V CE = 480 V,
IC = 50 A, R G = 2.7 Ω,
L= 100 µH note 2, 3
VGE = 15 V, V CE = 300V, I C = 50A
Notes
(1)
(2)
(3)
(4)
MIN
Pulse test, t ≤ 300 µ s, duty cycle δ ≤ 2%
switching times and losses may increase for larger V CE and/or R G values or higher junction temperatures.
switching losses include “tail” losses
Microsemi Corp. does not manufacture the igbt die; contact company for details.
50
240
3
280
600
9.6
200
35
80
400
250
50
100
ns
ns
mJ
ns
ns
mJ
nC