2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX60F60A MSAHX60F60A Features • • • • • • • • 600 Volts 60 Amps 2.9 Volts vce(sat) Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)60F60B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHX60F60A only) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Maximum Ratings @ 25°°C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C Tj= 90°C Peak Collector Current, pulse width limited by Tjmax, Safe Operating Area (RBSOA) @ VGE= 15V, L= 100µH (clamped inductive SYMBOL MAX. UNIT BVCES 600 Volts BVCGR VGES VGEM IC25 IC90 600 +/-20 +/-30 60 32 Volts Volts Volts Amps ICM Imax 120 64 Amps Amps PD Tj Tstg IS ISM θJC 300 -55 to +150 -55 to +150 32 100 0.4 Watts °C °C Amps Amps °C/W load), RG= 4.7Ω, Tj= 125°C, VCE= 0.8 x VCES Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode, MSAHX60F60A only) Pulse Source Current (Body Diode, MSAHX60F60A only) Thermal Resistance, Junction to Case Mechanical Outline COLLECTOR EMITTER (MS…A) GATE (MS…B) .A) EMITTER (MS…B) Datasheet# MSC0298A MSAGX60F60A MSAHX60F60A Electrical Parameters @ 25°°C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage Gate-to-Emitter Leakage Current SYMBOL CONDITIONS BVCES VGS = 0 V, I C = 250 µA VGE(th) VCE = VGE, IC = 250 µA VGE = ± 20VDC, VCE = 0 IGES Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1) ICES VCE(sat) Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance INDUCTIVE LOAD, Tj= 25°°C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off Energy INDUCTIVE LOAD, Tj= 125°°C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge Antiparallel diode forward voltage (MSAHX60F60A only) Antiparallel diode reverse recovery time (MSAHX60F60A only) Antiparallel diode reverse recovery charge (MSAHX60F60A only) Antiparallel diode peak recovery current (MSAHX60F60A only) gfs VCE =0.8•BVCES VGE = 0 V VGE= 15V, I C= 30A I C= 60A I C= 30A VCE ≥ 10 V; I C = 30 A TYP. MAX 600 15 UNIT V 2.5 T J = 25°C T J = 125°C TJ = 25°C T J = 125°C T J = 25°C T J = 25°C T J = 125°C 2.2 3.5 2.2 20 5.0 ±100 ±200 200 1000 2.9 V nA µA V S Cies Coes Cres VGE = 0 V, V CE = 25 V, f = 1 MHz 2500 230 70 pF td(on) tri td(off) tfi Eoff VGE = 15 V, V CE = 480 V, IC = 30 A, R G = 4.7 Ω, L= 100 µH note 2, 3 25 30 175 125 1.3 ns ns ns ns mJ td(on) tri Eon td(off) tfi Eoff Qg Qge Qgc VF VGE = 15 V, V CE = 480 V, IC = 30 A, R G = 4.7 Ω, L= 100 µH note 2, 3 trr Qrr IRM VGE = 15 V, V CE = 300V, I C = 30A IE= 15 A IE= 15 A IE= 30 A IE= 50 A IE= 10 A, IE= 30 A, IE= 10 A, IE= 30 A, IE= 10 A, IE= 30 A, T J = 25 °C T J = 150 °C T J = 25 °C T J = 25 °C dIE/dt= 100 A/us, T J= 25°C dIE/dt= 100 A/us, T J= 25°C dIE/dt= 100 A/us, T J= 25°C dIE/dt= 100 A/us, T J= 25°C dIE/dt= 100 A/us, T J= 25°C dIE/dt= 100 A/us, T J= 25°C Notes (1) (2) (3) (4) MIN Pulse test, t ≤ 300 µ s, duty cycle δ ≤ 2% switching times and losses may increase for larger V CE and/or R G values or higher junction temperatures. switching losses include “tail” losses Microsemi Corp. does not manufacture the igbt die; contact company for details. 25 35 1 250 260 4 125 23 50 175 150 35 75 1.5 1.3 1.7 1.9 100 140 160 320 3 4.2 ns ns mJ ns ns mJ nC V V V V ns ns nC nC A A