VS-2N681, VS-2N5205 Series www.vishay.com Vishay Semiconductors Phase Control Thyristor RMS SCRs, 25 A, 35 A FEATURES • General purpose stud mounted • Broad forward and reverse voltage range through 1200 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-208AA (TO-48) PRODUCT SUMMARY IT(AV) 16 A, 22 A IT(RMS) 25 A, 35 A VDRM/VRRM 25 V to 1200 V VTM 2.3 V IGT 60 mA TJ -40 °C to 125 °C Package TO-208AA (TO-48) Diode variation Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS 2N681-92 16 IT(AV) I2t 22 (1) (1) UNITS A -40 to +40 °C 35 A 50 Hz 145 285 60 Hz 150 (1) 300 (1) 50 Hz 103 410 60 Hz 94 375 40 40 IGT -65 to +65 2N5205-07 25 TC IT(RMS) ITSM (1) A2s mA (1) V/μs dV/dt - dI/dt 75 to 100 100 A/μs 25 to 800 600 to 1200 V VDRM Range VRRM Range TJ 100 A 25 to 800 600 to 1200 V -65 to +125 (1) -40 to +125 (1) °C Note (1) JEDEC® registered value Revision: 19-Nov-15 Document Number: 93706 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2N681, VS-2N5205 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS (APPLIED GATE VOLTAGE ZERO OR NEGATIVE) VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE (tp < 5 ms) V VS-2N681 25 35 VS-2N682 50 75 VS-2N683 100 150 VS-2N685 200 300 VS-2N687 300 400 VS-2N688 400 500 VS-2N689 500 600 VS-2N690 600 720 VS-2N691 700 840 VS-2N692 800 960 VS-2N5205 800 960 VS-2N5206 1000 1200 VS-2N5207 1200 1440 TYPE NUMBER TJ -65 °C to +125 °C -40 °C to +125 °C Note • JEDEC registered values ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) TEST CONDITIONS 180° half sine wave conduction IT(RMS) 50 Hz half cycle sine wave or 6 ms rectangular pulse Maximum peak, one-cycle non-repetitive surge current ITSM 60 Hz half cycle sine wave or 5 ms rectangular pulse 50 Hz half cycle sine wave or 6 ms rectangular pulse 60 Hz half cycle sine wave or 5 ms rectangular pulse t = 10 ms Maximum I2t capability for fusing I2t t = 8.3 ms 2N681-92 2N5205-07 16 (1) 22 (1) -65 to +65 (1) -40 to +40 (1) 25 35 145 285 150 (1) 300 (1) 170 340 180 355 Rated VRRM applied following surge, initial TJ = 125 °C 103 410 94 375 VRRM = 0 following surge, initial TJ = 125 °C 145 580 Following any rated load condition, and with rated VRRM applied following surge Same conditions as above except with VRRM applied following surge = 0 UNITS A °C A A A2s Maximum I2t capability for individual device fusing t = 8.3 ms 135 530 Maximum I2t capability for individual device fusing t = 0.1 ms to 10 ms, initial TJ < 125 °C VRRM applied following surge = 0 1450 5800 A2s TJ = 25 °C, IT(AV) = 16 A (50 A peak) 2N681, IT(AV) = 22 A (70 A peak) 2N5204 2 (1) 2.3 (1) V 20 at 25 °C (typical) 200 (1) at -40 °C mA Maximum peak on-state voltage Maximum holding current t = 10 ms I2t (2) VTM IH Anode supply 24 V, initial IT = 1.0 A Notes (1) JEDEC registered value (2) I2t for time t = I2t · t x x Revision: 19-Nov-15 Document Number: 93706 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2N681, VS-2N5205 Series www.vishay.com Vishay Semiconductors SWITCHING PARAMETER SYMBOL VDM = 25 V to 600 V VDM = 700 V to 800 V Maximum non-repetitive rate of rise of turned-on current dI/dt Typical delay time td TEST CONDITIONS TC = 125 °C, VDM = Rated VDRM, ITM = 2 x dI/dt, gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum Per JEDEC standard RS-397, 5.2.2.6 2N681-92 2N5205-07 UNITS 100 - 75 A/μs TC = 125 °C, VDM = 600 V, ITM = 200 A at 400 Hz maximum, gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum Per JEDEC standard RS-397, 5.2.2.6 - 100 TC = 25 °C, VDM = Rated VDRM, ITM = 10 A DC resistive circuit, gate pulse = 10 V, 40 source, tp = 6 μs, tr = 0.1 μs 1 1 μs BLOCKING PARAMETER SYMBOL Minimum critical rate of rise of off-state voltage dV/dt Maximum reverse leakage current TEST CONDITIONS TJ = 125 °C, exponential to 100 % rated VDRM TJ = 125 °C, exponential to 67 % rated VDRM Gate open circuited 2N681-92 2N5205-07 UNITS 100 (typical) 100 (1) 250 (typical) 250 - V/μs VRRM, VDRM = 400 V 3.5 VRRM, VDRM = 500 V 3.5 - VRRM, VDRM = 600 V 2.5 3.3 VRRM, VDRM = 700 V VRRM, VDRM = 800 V IDRM, IRRM TJ = 125 °C 2.2 - 2 2.5 VRRM, VDRM = 1000 V - 2 VRRM, VDRM = 1200 V - 1.7 mA Note (1) JEDEC registered value TRIGGERING PARAMETER Maximum peak gate power SYMBOL PGM TEST CONDITIONS tp < 5 ms for 2N681 series; tp < 500 μs for 2N5204 series 2N681-92 2N5205-07 UNITS 5 (1) 60 (1) Maximum average gate power PG(AV) 0.5 (1) 0.5 (1) Maximum peak positive gate current +IGM 2 (1) 2 Maximum peak positive gate voltage +VGM 10 (1) - Maximum peak negative gate voltage -VGM 5 (1) 5 (1) 80 (1) 80 (1) TC = 25 °C 40 40 TC = 125 °C 18.5 20 30 30 3 (1) 3 (1) 2 2 1.5 1.5 0.25 (1) 0.25 (1) Maximum required DC gate current to trigger TC = min. rated value IGT TC = 25 °C, + 6 V anode to cathode Typical DC gate current to trigger Maximum required DC gate voltage to trigger Maximum required gate trigger current is the lowest value which will trigger all units with + 6 V anode to cathode TC = - 65 °C VGT Maximum required gate trigger voltage is the lowest value which will trigger all units with + 6 V anode to cathode TC = 25 °C TC = 25 °C, + 6 V anode to cathode Typical DC gate voltage to trigger Maximum DC gate voltage not to trigger VGD TC = 125 °C Maximum gate voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode W A V mA V V Note (1) JEDEC registered value Revision: 19-Nov-15 Document Number: 93706 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2N681, VS-2N5205 Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction and storage temperature range TEST CONDITIONS TJ, TStg 2N681-92 2N5205-07 UNITS -65 to 125 (1) -40 to 125 (1) °C Maximum internal thermal resistance, junction to case RthJC DC operation 1.5 1.5 (1) Typical thermal resistance, case to sink RthCS Mounting surface, smooth, flat and greased 0.35 0.35 °C/W Lubricated threads (Non-lubricated threads) to nut 20 (27.5) lbf · in 0.23 (0.32) kgf · cm Mounting torque ± 10 % to device 2.3 (3.1) N·m 25 lbf · in 0.29 kgf · cm Lubricated threads 2.8 N·m 14 Approximate weight 0.49 Case style 14 g 0.5 oz. TO-208AA (TO-48) 180 160 Ø 140 Conduction Period Sinusoidal Current Waveform TJ = 125 °C 120 100 80 60 +180° +30° +60° +90° +120° 40 DC 20 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Instantaneous On-State Current (A) Maximum Allowable Case Temperature (°C) Note (1) JEDEC registered value 200 102 4 10 4 TJ = 125 °C TJ = 25 °C 1.0 4 10-1 0 1 2 3 4 5 6 7 Average On-State Current Over Full Cycle (A) Instantaneous On-State Voltage (V) Fig. 1 - Maximum Allowable Case Temperature vs. Average On-State Current, 2N681 Series Fig. 2 - Maximum On-State Voltage vs. Current, 2N681 Series Revision: 19-Nov-15 Document Number: 93706 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2N681, VS-2N5205 Series www.vishay.com 10 TJ = 125 °C Sinusoidal Current Waveform 60 50 +60° +30° +120° +90° Instantaneous Gate Voltage (V) Average Forward Power Loss Over Full Cycle (W) 70 Vishay Semiconductors DC +180° Controlled Rectifier Turned Fully On 40 30 20 Ø Conduction Angle 10 Maximum Allowable Instantaneous Gate Power Dissipation 5.0 W 9 8 7 6 Area of Certain Triggering 5 Area of All Possible Triggering Points 4 3 2 1 0 0 0 4 8 12 16 20 24 28 32 0 36 0.2 Average On-State Current Over Full Cycle (A) Fig. 3 - Maximum Low Level On-State Power Loss vs. Current (Sinusoidal Current Waveform), 2N681 Series 0.4 0.6 0.8 1.0 1.2 Instantaneous Gate Current (A) Fig. 5 - Gate Characteristics, 2N681 Series TJ = 125 °C Sinusoidal Current Waveform 4 DC 3 +180° Controlled Rectifier Turned Fully On +120° +90° +60° +30° 103 4 -65 °C Gate Voltage (V) IF -Average Forward Power Loss Over Full Cycle (W) 104 102 4 2 25 °C 1 10 125 °C 4 Ø VGD (Max.) = 0.25 V Conduction Angle 1.0 1.0 4 10 102 4 4 0 103 0 25 50 Average On-State Current Over Full Cycle (A) ZthJC - Transient Thermal Impedance (°C/W) Fig. 4 - Maximum High Level On-State Power Loss vs. Current (Sinusoidal Current Waveform), 2N681 Series 101 10-1 4 1.0 4 75 100 125 Gate Current (mA) 10 Fig. 5a - Area of All Possible Triggering Points vs. Temperature, 2N681 Series 4 102 4 103 4 104 Free Convection Forced Convection at 1000 LFM 4 Infinite Heatsink 1.0 1.0 Mounted on Infinite Heatsink and 4" x 4" x 1/16" Copper Fin 4 4 Long Time Durations 10-1 10-1 4 4 Short Time Durations 10-2 10-2 10 -6 4 -5 10 4 10 -4 4 -3 10 4 -2 10 4 10 -1 t - Square Wave Pulse Duration (s) Fig. 6 - Maximum Transient Thermal Impedance, Junction to Case, vs. Pulse Duration, 2N681 Series Revision: 19-Nov-15 Document Number: 93706 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2N681, VS-2N5205 Series Vishay Semiconductors 90 150 100 Average Forward Power Loss Over Full Cycle (W) At Any Maximum Rated Load Condition And With Rated VRRM Applied Following Surge 60 Hz 50 Hz 50 0 2 4 6 8 10 20 +30° +60° +90° +120° +180° 70 60 50 40 30 Ø Conduction Angle Sinusoidal Current Waveform TJ = 125 °C Controlled Rectifier Turned Fully On 20 10 40 60 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 2N681 Series 5 10 15 20 25 30 35 40 45 50 Average On-State Current Over Full Cycle (A) Fig. 10 - Maximum Low-Level On-State Power Loss vs. Average On-State Current (Sinusoidal Current Waveform), 2N5205 Series 140 102 120 Ø Conduction Period Sinusoidal Current Waveform TJ = 125 °C 100 80 +30° +60° +90° +120° 40 +180° DC 60 20 0 4 8 12 16 20 24 28 32 36 40 104 +30° +60° +90° 5 5 +30° +60° +90° 2 +120° 2 +180° DC 103 +120° +180° DC 10 5 TJ = 125 °C 5 Ø 2 1.0 1.0 0 Conduction Angle Sinusoidal Current Waveform Controlled Rectifier Turned Fully On 2 5 10 2 5 102 2 5 2 102 103 Average On-State Current Over Full Cycle (A) Average On-State Current Over Full Cycle (A) Fig. 8 - Maximum Allowable Case Temperature vs. Average On-State Current (Sinusoidal Current Waveform), 2N5205 Series Fig. 11 - Maximum High-Level On-State Power Loss vs. Average On-State Current (Sinusoidal Current Waveform), 2N5205 Series 90 140 120 Average Forward Power Loss Over Full Cycle (W) Maximum Allowable Case Temperature (°C) DC 80 0 0 IF -Average Forward Power Loss Over Full Cycle (W) Maximum Allowable Case Temperature (°C) Peak Half Sine Wave On-State Current (A) www.vishay.com Ø Conduction Period Rectangular Current Waveform TJ = 125 °C 100 80 60 40 +60° +180° +90° +120° 20 DC 80 70 +60° +90° +120° +180° 60 50 DC 40 30 Ø Conduction Period Rectangular Current Waveform TJ = 125 °C Controlled Rectifier Turned Fully On 20 10 0 0 0 4 8 12 16 20 24 28 32 36 40 0 5 10 15 20 25 30 35 40 45 50 Average On-State Current Over Full Cycle (A) Average On-State Current Over Full Cycle (A) Fig. 9 - Maximum Allowable Case Temperature vs. Average On-State Current (Rectangular Current Waveform), 2N5205 Series Fig. 12 - Maximum Low-Level On-State Power Loss vs. Average On-State Current (Rectangular Current Waveform), 2N5205 Series Revision: 19-Nov-15 Document Number: 93706 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2N681, VS-2N5205 Series www.vishay.com Vishay Semiconductors 104 5 5 +60° +90° +60° +90° 2 5 5 Ø 2 1.0 1.0 +120° 2 +180° DC 103 +120° +180° DC 10 Conduction Period Controlled Rectifier Turned Fully On 2 5 Instantaneous On-State Current (A) IF -Average Forward Power Loss Over Full Cycle (W) 102 10 TJ = 125 °C 2 5 102 2 5 2 102 103 103 4 102 4 10 TJ = 125 °C TJ = 25 °C 4 1.0 1 0 2 3 4 5 6 7 Instantaneous On-State Voltage (V) Fig. 13 - Maximum High-Level On-State Power Loss vs. Average On-State Current (Rectangular Current Waveform), 2N5205 Series Fig. 14 - Maximum Instantaneous On-State Voltage vs. Instantaneous On-State Current, 2N5205 Series ZthJC - Transient Thermal Impedance (°C/W) Average On-State Current Over Full Cycle (A) 101 5 10-1 2 5 1.0 2 5 10 2 2 5 102 2 5 103 2 5 104 10 5 2 Steady State Value = 1.5 °C/W 1.0 1.0 Long Time Durations 5 5 2 2 10-1 10-1 5 Short Time Durations 5 2 2 10-2 10-6 2 5 10-5 2 5 10-4 2 5 10-3 2 5 10-2 2 10-2 5 10-1 t - Square Wave Pulse Duration (s) Fig. 15 - Maximum Transient Thermal Resistance, Junction to Case vs. Pulse Duration, 2N5205 Series LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95333 Revision: 19-Nov-15 Document Number: 93706 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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