50PTS Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Medium Power Thyristors (Stud Version), 50A Available RoHS* COMPLIANT FEATURES Improved glass passivation for high reliability High current rating Excellent dynamic characteristics dV/dt = 1000 V/µs option Superior surge capabilities Standard package Metric threads version available Types up to 1600V V DRM /V RRM RoHs compliant TYPICAL APPLICATIONS TO-208AC(TO-65) Phase control applications in converters Lighting circuits Battery charges Regulated power supplies temperature and speed control circuit Can be supplied to meet stringent military, aerospace and other high reliability requirements PRODUCT SUMMARY IT(AV) 50A MAJOR RATINGS AND CHARACTERISTICS TEST CONDITIONS PARAMETER I T(AV) TC I T(RMS) I TSM I 2t 50 HZ 60 HZ 50 HZ 60 HZ TJ www.nellsemi.com A 94 ºC 78.5 A 9.32 Typical Page 1 of 7 UNITS 50 1430 1490 10.22 V DRM /V RRM tq VALUES A Ka 2 s 600 to 1600 V 110 µs -40 to 125 ºC 50PTS Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND (1) OFF-STATE VOLTAGE V NON-REPETITIVE PEAK VOLTAGE (2) AT TJ = TJ MAXIMUM V mA 06 600 700 08 800 900 10 1000 1100 12 1200 1300 16 1600 1700 TYPE VOLTAGE NUMBER CODE 50PT VRSM, MAXIMUM IDRM/IRRM, MAXIMUM 15 Note (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs (2) For voltage pulses with tp ≤ 5 ms FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS on-state current SYMBOL I T(AV) TEST CONDITIONS 180° conduction, half sine wave I T(RMS) non-reptitive surge current Maximum l²t for fusing I TSM No voltage reapplied 1200 t = 8.3ms 100%V RRM reapplied t = 10ms t = 8.3ms No voltage reapplied t = 10ms 100%V RRM reapplied t = 8.3ms t = 10ms I 2t t = 8.3ms Maximum l²√t for fusing I 2√t 50 94 78.5 1430 t = 10ms Maximum peak, one-cycle VALUES 1490 Sinusoidal half wave, 1255 initial T J = T J maximum 10.22 9.32 7.23 t = 0.1 to 10 ms, no voltage reapplied, T J = T J maximum ºC A A A 2s 6.59 102.2 Low level value of threshold voltage VT(TO)1 (16.7 % x πx l T(AV) < l < πx l T(AV) ), T J = T J maximum 0.94 High level value of threshold voltage VT(TO)2 ( πx l T(AV) < I < 20 × π× I T(AV) ),T J =T J maximum T J = T J maximum 1.08 A 2√s V Low level value of on-state slope resistance r t1 (16.7 % x πx l T(AV) < l < πx l T(AV) ), T J = T J maximum 4.08 High level value of on-state slope resistance r t2 ( πx l T(AV) < I < 20 × π× l T(AV) ), 3.34 Maximum on-state voltage V TM mΩ T J = T J maximum l pk = 157 A, T J = 25°C 1.60 150 300 Maximum holding current lH T J = 25 °C, anode supply 22 V, resistive load initial l T = 2A Latching current lL Anode supply 6V , resistive load www.nellsemi.com UNITS A Page 2 of 7 V mA 50PTS Series SEMICONDUCTOR RoHS RoHS Nell High Power Products SWITCHING PARAMETER Maximum rate of rise of turned-on current SYMBOL dl/dt TEST CONDITIONS T C = 125 °C , V DM = 2/3 V DRM , t P = 200 µs I G = 0.3A, dI G /dt = 0.3 A/µs VALUES UNITS 150 A/µs Typical delay time td T c = 25 °C, V DM = Rated V DRM , I TM = 10 A dc resistive circuit Gate pulse = 10V, 15Ω source, t p = 20µs 0.9 Typical turn-off time tq T c = 125 °C , ITM = 50A, reapplied dV/dt = 20 V/µs dIr/dt = - 10 A/µs, V R = 50V 110 µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES UNITS 1000 V/µs VALUES UNITS T J = 125°C,V D =2/3 V DRM , gate open TRIGGERING PARAMETER Maximum peak gate power TEST CONDITIONS SYMBOL P GM T J = T J maximum, t p ≤ 5 ms 10 P G(AV) 2.5 Maximum peak positive gate current I GM 2.5 Maximum peak positive gate voltage +V GM 20 Maximum peak negative gate voltage -V GM 10 Maximum average gate power I GT T J = 25°C T J = 125°C T J = -40°C DC gate voltage required to trigger V GT DC gate current not to trigger I GD DC gate voltage not to trigger V GD A V 250 T J = -40°C DC gate current required to trigger W 100 Maximum required gate trigger current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied mA 50 3.5 2.0 T J = 25°C T J = T J maximum, Maximum gate current/voltage V DRM = Rated value not to trigger is the maximum value which will not trigger any unit with rated V DRM anode to T J = T J maximum, cathode applied V 5.0 mA 0.2 V THERMAL AND MECHANICAL SPECIFCATIONS PARAMETER Maximum operating junction and storage temperature range SYMBOL TEST CONDITIONS T J , T stg Maximum thermal resistace, junction to case R thJC Maximum thermal resistance case to heatsink R thCS VALUES UNITS - 40 to125 ºC DC operation 0.35 Mounting surface, smooth, flat and greased 0.25 K/W Not-lubricated threads Allowable mounting torque +0 Lubricated threads Approximate weight Case style www.nellsemi.com 3.4 +0 -10% (30) See dimensions - link at the end of datasheet Page 3 of 7 2.3 -10% (20) 16 0.56 N·m (lbf · in) N·m (lbf · in) g oz. TO-208AC (TO-65) 50PTS Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ∆RthJC CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE 180° 0.078 0.057 120° 90° 0.094 0.120 0.176 0.098 0.130 0.183 0.294 0.296 60° 30° TEST CONDUCTIONS RECTANGULAR CONDUCTION T J = T J maximum UNITS K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Fig.2 Current ratings characteristics 130 Maximum allowable case temperature(˚C) Maximum allowable case temperature(˚C) Fig.1 Current ratings characteristics 50PTS Series R thJC (DC)=0.35K/W 120 Conduction Angle 110 30° 60° 90° 100 120° 180° 90 0 10 30 20 40 50 60 130 50PTS Series R thJC (DC)=0.35K/W 120 110 Conduction Period 100 90° 90 60° 0 Peak half sine wave on-state current(A) Maximum allowable on-state power loss(W) 50 RMS Limit 40 30 Conduction Angle 20 50PTS Series T J = 125°C 10 0 0 10 20 30 40 50 1300 20 30 40 50 60 70 80 At Any Rated Load Condition And With Rated V RRM Applied Following Surge initial T J = 125°C 1200 @ 60Hz 0.0083 s @ 50Hz 0.0100 s 1100 1000 900 800 700 50PTS Series 600 1 Average on-state current (A) www.nellsemi.com 10 Fig.4 Maximum non-repetitive surge current 180° 120° 90° 60° 30° 60 DC Average on-state current (A) Fig.3 On-state power loss characteristics 70 180° 80 Average on-state current (A) 80 120° 30° 10 100 Number of equal amplitude half cycle current pulses (N) Page 4 of 7 50PTS Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.6 Maximum non-repetitive surge current 100 1500 DC 180° 120° 90° 60° 30° 90 80 70 60 Peak half sine wave on-state current Maximum allowable on-state power loss (W) Fig.5 On-state power loss characteristics 50 RMS Limit 40 Conduction Period 30 50PTS Series T J = 125°C 20 10 0 0 10 20 30 40 50 70 60 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained Initial T J = 125°C No Voltage Reapplied Rated V RRM Reapplied 1400 1300 1200 1100 1000 900 800 700 600 50PTS Series 500 0.01 80 0.1 Average on-state current (A) Pulse train duration (S) Fig.7 Forward voltage drop characteristics Instantaneous on-state current (A) 1000 100 T J = 25°C T J = 125°C 10 50PTS Series 1 0.5 1 1.5 2 2.5 3 3.5 4.5 4 Transient Thermal impedance Z thJ-hs (K/W) Instantaneous on-state voltage (V) Fig.8 Thermal impedance Z thJC Characteristics 1 Steady State Value R thJ-hs = 0.35K/W 0.1 50PT Series 0.01 0.001 0.01 0.1 Square wave pulse duration www.nellsemi.com Page 5 of 7 1 10 1 50PTS Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.9 Gate characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30 ohms; tr<=0.5µs b) Recommended load line for <=30% rated di/dt : 20V, 65 ohms tr<=1 µs (b) (a) (1) PGM = 10W, tp = 5ms (2) PGM = 20W, tp = 2.5ms (3) PGM = 50W, tp = 1ms (4) PGM = 100W, tp = 500µs Tj = -40°C Tj = 125°C 1 Tj = 25°C Instantaneous gate voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 50PTS Series Frequency Limited by PG(AV) 0.01 10 1 0.1 100 1000 Instantaneous gate current (A) ORDERING INFORMATION TABLE Device code 50 PT 12 S M 1 2 3 4 5 1 - Current Code 2 - for SCR series 3 - Voltage code × 100 = VRRM (see Voltage Ratings table) 4 - S for stud type 5 - None = Stud base TO-208AA (TO-65) 1/4”-28 UNF-2A M = Stud base TO-208AA (TO-65) M6×1 www.nellsemi.com Page 6 of 7 50PTS Series SEMICONDUCTOR RoHS RoHS Nell High Power Products GLASS - METAL SEAL 5.1/7.6 (0.2/0.3) Ø4.1(Ø0.16) 14.5(0.57) MAX 3.0(0.118) Min Ø1.1/Ø1.4 (Ø0.043/Ø0.055) Ø15.0(Ø0.59) 10.7/11.5 (0.42/0.46) 31.0(1.22) Max 2.5/3.6 (0.1/0.14) 1/4”28UNF-2A 17.2/17.35 (0.67/0.68) 19.2(0.75) 2.7(0.106) K 1.7/1.8 (0.06/0.07) G A All dimensions in millimeters(inches) www.nellsemi.com Page 7 of 7