UNISONIC TECHNOLOGIES CO., LTD UF634 Power MOSFET ADVANCED POWER MOSFET DESCRIPTION The UTC UF634 is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower RDS(ON), improved gate charge and so on. FEATURES * RDS(ON)<0.45Ω @ VGS=10V, ID=8.1A * Lower Input Capacitance * Improved Gate Charge * Lower Leakage Current: 10μA (MAX.) @ VDS = 250V * Avalanche Rugged Technology * Rugged Gate Oxide Technology * Extended Safe Operating Area SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF634L-TA3-T UF634G-TA3-T UF634L-TF1-T UF634G-TF1-T UF634L-TF3-T UF634G-TF3-T UF634L-TN3-R UF634G-TN3-R UF634G-S08-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F TO-252 SOP-8 1 G G G G S 2 D D D D S Pin Assignment 3 4 5 6 S - - S - - S - - S - - S G D D 7 D Packing 8 Tube Tube Tube - Tape Reel D Tape Reel 1 of 9 QW-R502-454.F UF634 Power MOSFET MARKING TO-220 / TO-220F / TO-220F1 TO-220F2 / TO-252 / TO-262 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SOP-8 2 of 9 QW-R502-454.F UF634 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-to-Source Voltage VGS ± 30 V Drain-to-Source Voltage VDSS 250 V Continuous Drain Current TC=25°C ID 8.1 A Drain Current-Pulsed (Note 2) IDM 32.4 A Avalanche Current (Note 2) IAR 8.1 A Single Pulsed Avalanche Energy (Note 3) EAS 205 mJ Repetitive Avalanche Energy (Note 2) EAR 7.4 mJ TO-220 74 W TO-220F/TO-220F1 38 W Power Dissipation PD TO-252 50 W SOP-8 5 W Operating Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 3. L=6.24mH, IAS=8.1A, VDD=50V, RG=27 Ω, Starting TJ =25°C THERMAL RESISTANCE PARAMETER TO-220/TO-220F1 TO-220F Junction to Ambient TO-252 SOP-8 TO-220 TO-220F/TO-220F1 Junction to Case TO-252 SOP-8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS UNIT 62.5 °C/W 110 83 1.69 3.29 2.5 24 °C/W °C/W °C/W °C/W °C/W °C/W 3 of 9 QW-R502-454.F UF634 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=250V Gate- Source Leakage Current IGSS VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS= VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=8.1A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=200V, ID=8.1A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=125V, ID=8.1A, RG=12Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=8.1A, VGS=0V, TJ=25°C (Note 2) Maximum Body-Diode Continuous Current IS Pulsed-Source Current (Note 1) ISM Note: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature. 2. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤2%. 3. Essentially Independent of Operating Temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 250 V 10 µA ±100 nA 2.0 4.0 0.45 V Ω 730 950 110 130 50 60 pF pF pF 30 40 5.8 13.5 13 40 14 40 53 120 21 50 nC nC nC ns ns ns ns 1.5 V 8.1 32.4 A A 4 of 9 QW-R502-454.F UF634 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R502-454.F UF634 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 9 QW-R502-454.F UF634 Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 9 QW-R502-454.F UF634 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Capacitance vs. Drain-Source Voltage 100 VGS=0V 250μs Pulse Test 20 Capacitance (pF) Reverse Drain Current, IDR (A) Source- Drain Diode Forward Voltage 10 8 125°C 25°C COSS 500 250 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 CISS 750 CISS=CGS+CGD (CDS=shorted) COSS=CDS+CGD CRSS=CGD 0 1.6 Source-Drain Voltage, VSD (V) CRSS VGS=0V f = 1MHz 10-1 100 101 Drain Current, ID (A) Drain-Source On-Resistance, RDS(ON) (Normalized) (Ω) Gate-Source Voltage, VGS (V) Drain-Source Breakdown Voltage, BVDSS, (Normalized) (V) Drain-Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 9 QW-R502-454.F UF634 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Thermal Response Max. Drain Current vs. Case Temperature 20 Thermal Response, θJC (t) Drain Current, ID (A) D=0.5 15 10 5 100 θJC (t) = 3.13°C/W Max. Duty Factor, D=t1/t2 TJM-TC=PDM×θJC (t) 0.2 0.1 5 0.0 2 0.0 10-1 1 0.0 PDM t1 Single pulse t2 0.0 25 50 75 100 125 150 Case Temperature, TC (°C) -5 10 -4 10 -3 10 -2 10 -1 10 100 101 Square Wave Pulse Duration, t1 (sec) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 9 QW-R502-454.F