UTC-IC UF840

UNISONIC TECHNOLOGIES CO., LTD
UF840
Power MOSFET
8A, 500V, 0.85Ω, N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET
is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
„
FEATURES
* Low RDS(ON)=0.85Ω
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF840L-TA3-T
UF840G-TA3-T
UF840L-TF1-T
UF840G-TF1-T
UF840L-TF2-T
UF840G-TF2-T
UF840L-TF3-T
UF840G-TF3-T
UF840L-TQ2-R
UF840G-TQ2-R
UF840L-TQ2-T
UF840G-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tube
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QW-R502-047,F
UF840
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ =25°C ~125°C)
VDSS
500
V
Drain to Gate Voltage (RGS = 20kΩ, TJ =25°C ~125°C)
VDGR
500
V
Gate to Source Voltage
VGSS
±30
V
8.0
A
Continuous
ID
Drain Current
Pulsed
IDM
32
A
TO-220
134
TO-220F/TO-220F1
44
Power Dissipation (TC=25°C)
PD
W
TO-220F2
46
TO-263
134
Single Pulse Avalanche Energy
EAS
510
mJ
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
SYMBOL
θJA
Junction to Ambient
Junction to Case
„
TO-220
TO-220F/TO-220F1
TO-220F2
TO-263
θJc
RATINGS
62.5
0.93
2.86
2.72
0.93
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (TA =25°C, unless Otherwise Specified.)
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
On-State Drain Current (Note 1)
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
BVDSS ID = 250μA, VGS = 0V
VGS(TH) VGS = VDS, ID = 250μA
ID(ON)
VDS > ID(ON) x RDS(ON)MAX, VGS = 10V
VDS = Rated BVDSS, VGS = 0V
IDSS
VDS=0.8xRated BVDSS,VGS=0V,TJ= 125°C
IGSS
VGS = ±30V
Gate-Source Leakage Current
Static Drain-Source On-State
RDS(ON) ID = 4.4A, VGS = 10V
Resistance (Note 1)
Turn-On Delay Time
tDLY(ON)
Turn-Off Delay Time
tDLY(OFF) VDD=250V, ID ≈ 8A, RG = 9.1Ω, RL =30Ω
(Note 2)
Turn-On Rise Time
tR
Turn-Off Fall Time
tF
Total Gate Charge
QG(TOT)
VGS =10V, ID =8A,VDS =0.8 x Rated BVDSS
Gate-Source Charge
QGS
IG(REF) =1.5mA (Note 3)
Gate-Drain Charge
QGD
Input Capacitance
CISS
Output Capacitance
COSS
VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
CRSS
Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
500
V
2
4
V
8
A
25
μA
250 µA
±100 nA
0.8
0.85
Ω
15
50
21
20
42
7
22
1225
200
85
21
74
35
30
63
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
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UF840
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Power MOSFET
INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL
DRAIN INDUCTANCE
Measured from the contact screw on tab to center of die
LD
Measured from the drain lead(6mm from package) to center of die
SOURCE INDUCTANCE
Measured from the source lead(6mm from header) to source bond pad
LS
Remark: Modified MOSFET symbol showing the internal devices inductances as below.
„
MIN TYP MAX UNIT
3.5
4.5
nH
nH
7.5
nH
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Source to Drain Diode Voltage(Note 1)
VSD
TJ = 25°C, ISD = 8.0A, VGS = 0V
2
V
Continuous Source to Drain Current
ISD
8
A
Note 2
Pulse Source to Drain Current
ISDM
32
A
Reverse Recovery Time
trr
TJ = 25°C, ISD = 8.0A, dISD/dt = 100A/μs
210 475 970 ns
Reverse Recovery Charge
QRR
TJ = 25°C, ISD = 8.0A, dISD/dt = 100A/μs
2
4.6 8.2 μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF840
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Unclamped Energy Test Circuit
Unclamped Energy Waveforms
Switching Time Test Circuit
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
tON
tOFF
tDLY(ON)
tDLY(OFF)
tR
VDS
tF
90%
90%
10%
0
10%
90%
VGS
0
10%
50%
50%
PULSE WIDTH
Resistive Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveforms
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UF840
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
Drain Current, ID (A)
Drain Current, ID (A)
Normalized Transient Thermal
Impedance, ZθJC
„
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QW-R502-047,F
UF840
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Normalized Drain to Source Breakdown Voltage
vs. Junction Temperature
Normalized Drain to Source on Resistance
vs. Junction Temperature
Pulse Duration=80µs
Duty Cycle = 0.5% Max
2.4 VGS =10V, ID=4.4A
1.8
1.2
0.6
0
-60 -40 -20 0
20 40 60 80 100 120 140 160
Junction Temperature, TJ (°C)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1.25
Normalized Drain to Source
on Breakdown Voltage
Normalized Drain to Source
on Resistance Voltage
3.0
ID=250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature, TJ (°C)
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UF840
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
„
Source to Drain DIODE Voltage
Pulse Duration=80µs
Duty Cycle = 0.5% Max
Gate to Source Voltage, VGS (V)
Source to Drain Current, ISD (A)
Gate to Source Voltage vs. Gate Charge
20
100
10
TJ=150°C
TJ=25°C
1.0
0.1
0
0.3
0.6
0.9
1.2
Source to Drain Voltage, VSD (V)
1.5
ID=8A
16
VDS=100V
12
VDS=250V
VDS=400V
8
4
0
0
12
36
4
24
Gate Charge, QG (nC) 8
60
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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