VS-25TTS16SPbF www.vishay.com Vishay Semiconductors Thyristor Surface Mount, Phase Control SCR, 16 A FEATURES Anode 2, 4 4 • Meets MSL level 1, per LF maximum peak of 260 °C • Designed and JEDEC®-JESD 47 2 3 1 qualified J-STD-020, according • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 Cathode Gate 1 TO-263AB (D2PAK) APPLICATIONS • Input rectification (soft start) PRODUCT SUMMARY Package TO-263AB (D2PAK) Diode variation Single SCR IT(AV) 16 A VDRM/VRRM 1600 V VTM 1.25 V IGT 45 mA TJ -40 to 125 °C • Vishay input diodes, switches and output rectifiers which are available in identical package outlines DESCRIPTION The VS-25TTS16SPbF of silicon controlled rectifiers is specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 μm) copper 3.5 5.5 Aluminum IMS, RthCA = 15 °C/W 8.5 13.5 Aluminum IMS with heatsink, RthCA = 5 °C/W 16.5 25.0 UNITS A Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform IRMS VALUES 16 25 UNITS A VRRM/VDRM 1600 V ITSM 350 A VT 16 A, TJ = 25 °C dV/dt dI/dt 1.25 V 500 V/μs 150 A/μs -40 to +125 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM, AT 125 °C mA 1600 1600 10 TJ VOLTAGE RATINGS PART NUMBER VS-25TTS16SPbF Revision: 09-Jul-15 Document Number: 94679 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS16SPbF www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM TEST CONDITIONS VALUES TYP. MAX. TC = 93 °C, 180° conduction half sine wave 16 10 ms sine pulse, rated VRRM applied 300 UNITS 25 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated VRRM applied 450 10 ms sine pulse, no voltage reapplied 630 A Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 6300 A2s Maximum on-state voltage drop VTM 16 A, TJ = 25 °C 1.25 V 12.0 m 1.0 V On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Holding current Maximum latching current rt VT(TO) IRM/IDM IH IL Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt TJ = 125 °C TJ = 25 °C TJ = 125 °C 0.5 VR = Rated VRRM/VDRM Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C A2s 10 - 150 mA Anode supply = 6 V, resistive load, TJ = 25 °C 200 TJ = TJ max., linear to 80 %, VDRM = Rg - k = Open 500 V/μs 150 A/μs TRIGGERING PARAMETER Maximum peak gate power SYMBOL TEST CONDITIONS VALUES UNITS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Anode supply = 6 V, resistive load, TJ = - 10 °C Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD 60 Anode supply = 6 V, resistive load, TJ = 25 °C 45 Anode supply = 6 V, resistive load, TJ = 125 °C 20 Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq TEST CONDITIONS TJ = 25 °C TJ = 125 °C 0.9 4 μs 110 Revision: 09-Jul-15 Document Number: 94679 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS16SPbF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS VALUES TJ, TStg Soldering temperature TS Maximum thermal resistance, junction to case RthJC UNITS -40 to +125 For 10 s (1.6 mm from case) 260 DC operation 1.1 °C °C/W Typical thermal resistance, junction to ambient (PCB mount) RthJA (1) 40 Approximate weight 2 g 0.07 oz. Case style D2PAK (SMD-220) Marking device 25TTS16S 130 Maximum Averag e On-state Power Loss (W) Maximum Allowable Case Tempera ture (°C) Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm] copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 R thJC (DC) = 1.1 °C/ W 120 Conduc tion Angle 110 30° 60° 90° 100 120° 180° 90 0 5 10 15 25 180° 120° 90° 60° 30° 20 15 RMSLimit 10 Conduc tion Angle 5 TJ= 125°C 0 20 0 Maximum Averag e On-state Power Loss (W) Maximum Allowable Case Temperature (°C) R thJC (DC) = 1.1 °C/ W 120 Conduction Period 100 60° 90° 120° 30° 180° DC 80 0 5 10 15 20 25 Average On-sta te Current (A) Fig. 2 - Current Rating Characteristics 12 16 20 Fig. 3 - On-State Power Loss Characteristics 130 90 8 Avera ge On-state Current (A) Average On-sta te Current (A) Fig. 1 - Current Rating Characteristics 110 4 30 35 DC 180° 120° 90° 60° 30° 30 25 20 RMS Limit 15 Conduction Period 10 5 T J = 125°C 0 0 5 10 15 20 25 30 Avera ge On-sta te Current (A) Fig. 4 - On-State Power Loss Characteristics Revision: 09-Jul-15 Document Number: 94679 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS16SPbF 350 Vishay Semiconductors 400 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 300 Peak Half Sine Wa ve On-state Current (A) Pea k Half Sine Wave On-sta te Current (A) www.vishay.com 250 200 150 1 10 100 350 300 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Cond uc tion Ma y Not Be Ma inta ined. Initia l TJ = 125°C No Voltage Rea pp lied Rated VRRM Reapp lied 250 200 150 100 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ= 25°C TJ= 125°C 10 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Transient Thermal Imped anc e Z thJC (°C/W) Fig. 7 - On-State Voltage Drop Characteristics 10 Steady State Value (DC Opera tion) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Gate Characteristics Revision: 09-Jul-15 Document Number: 94679 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS16SPbF www.vishay.com Vishay Semiconductors Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for <= 30% rated d i/ dt: 10 V, 65 ohms 10 tr = 1 µs, tp >= 6 µs (1) (2) (3) (4) PGM = 40 W, tp = 1 ms PGM = 20 W, tp = 2 ms PGM = 8 W, tp = 5 ms PGM = 4 W, tp = 10 ms (a ) (b) VGD TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) IGD (2) (3) (1) Frequency Limited by PG(AV) 0.1 0.001 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 25 T T S 16 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (25 = 25 A) 3 - 4 - 5 - 6 - Circuit configuration: T = single thyristor Package: T = TO-220AC Type of silicon: S = standard recovery rectifier Voltage rating: voltage code x 100 = VRRM D2PAK 7 - S = TO-220 8 - 9 - None = tube TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) PbF = lead (Pb)-free TRL PbF 8 9 16 = 1600 V (SMD-220) version ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-25TTS16SPbF 50 1000 Antistatic plastic tubes VS-25TTS16STRRPbF 800 800 13" diameter reel VS-25TTS16STRLPbF 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 Revision: 09-Jul-15 Document Number: 94679 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0° to 8° Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC® outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000