VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series www.vishay.com Vishay Semiconductors High Voltage Phase Control Thyristor, 25 A FEATURES • • • • • • 2 (A) Designed and qualified for industrial level Fully isolated package (VINS = 2500 VRMS) UL E78996 pending Compliant to RoHS Directive 2002/95/EC 125 °C max. operating junction temperature Halogen-free according to IEC 61249-2-21 definition (-M3 only) 1 (K) (G) 3 TO-220AB FULL-PAK APPLICATIONS • Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding, and battery charge PRODUCT SUMMARY Package TO-220FP Diode variation Single SCR IT(AV) 16 A VDRM/VRRM 800 V, 1200 V VTM 1.25 V DESCRIPTION IGT 45 mA TJ - 40 °C to 125 °C The VS-25TTS...FP... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 18 22 A Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES 16 Sinusoidal waveform IRMS A 25 VRRM/VDRM ITSM VT UNITS 16 A, TJ = 25 °C dV/dt dI/dt TJ 800/1200 V 300 A 1.25 V 500 V/μs 150 A/μs - 40 to 125 °C VOLTAGE RATINGS VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V VS-25TTS08FPPbF, VS-25TTS08FP-M3 800 800 VS-25TTS12FPPbF, VS-25TTS12FP-M3 1200 1200 PART NUMBER Revision: 15-Nov-11 IRRM/IDRM AT 125 °C mA 10 Document Number: 94384 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM TC = 85 °C, 180° conduction half sine wave 16 10 ms sine pulse, rated VRRM applied 300 10 ms sine pulse, no voltage reapplied 350 25 UNITS A 450 630 I2t t = 0.1ms to 10 ms, no voltage reapplied 6300 A2s VTM 16 A, TJ = 25 °C 1.25 V 12.0 m 1.0 V Maximum I2t for fusing Maximum on-state voltage drop Maximum reverse and direct leakage current TYP. MAX. 10 ms sine pulse, rated VRRM applied I2t Threshold voltage VALUES 10 ms sine pulse, no voltage reapplied Maximum I2t for fusing On-state slope resistance TEST CONDITIONS rt VT(TO) IRM/IDM TJ = 125 °C TJ = 25 °C TJ = 125 °C 0.5 VR = Rated VRRM/VDRM Holding current IH Anode supply = 6 V, resistive load, initial IT = 1 A Maximum latching current IL Anode supply = 6 V, resistive load A2s 10 100 - mA 200 Maximum rate of rise of off-state voltage dV/dt 500 V/μs Maximum rate of rise of turned-on current dI/dt 150 A/μs VALUES UNITS TRIGGERING PARAMETER TEST CONDITIONS SYMBOL PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum peak gate power Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 10 °C 60 Anode supply = 6 V, resistive load, TJ = 25 °C 45 Anode supply = 6 V, resistive load, TJ = 125 °C 20 Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq Revision: 15-Nov-11 TEST CONDITIONS TJ = 25 °C TJ = 125 °C 0.9 4 µs 110 Document Number: 94384 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS VALUES UNITS - 40 to 125 °C DC operation 1.5 Mounting surface, smooth and greased 1.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque 25TTS08FP Case style TO-220AB FULL-PAK (94/V0) Maximum Average On-sta te Power Loss (W) 130 25TTS.. Series RthJC (DC) = 1.5 °C/ W 110 Conduc tion Angle 100 30° 90 60° 90° 120° 180° 80 70 0 5 10 15 25TTS12FP 25 180° 120° 90° 60° 30° 20 15 RMSLimit 10 Conduction Angle 25TTS.. Series TJ= 125°C 5 0 0 20 4 8 12 16 20 Average On-state Current (A) Avera ge On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics 130 Maximum Averag e On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Marking device 120 °C/W 62 25TTS.. Series R thJC (DC) = 1.5 °C/ W 120 110 Conduc tion Period 100 90 30° 80 60° 90° 120° 180° DC 70 0 5 10 15 20 25 30 35 DC 180° 120° 90° 60° 30° 30 25 20 RMSLimit 15 Conduc tion Period 10 25TTS.. Series T J = 125°C 5 0 0 5 10 15 20 25 30 Average On-state Current (A) Avera ge On-sta te Current (A) Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Revision: 15-Nov-11 Document Number: 94384 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series 350 Vishay Semiconductors 400 At Any Rated Load Cond ition And With Rated V RRM App lied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 300 Peak Half Sine Wa ve On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com 250 200 25TTS.. Series 150 1 10 350 300 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduc tion Ma y Not Be Mainta ined. Initia l TJ = 125°C No Voltage Rea pp lied Rated VRRM Reapp lied 250 200 150 25TTS.. Series 100 0.01 100 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Insta ntaneous On-state Current (A) 1000 100 TJ= 25°C TJ= 125°C 10 25TTS.. Series 1 0 1 2 3 4 5 Instanta neous On-state Voltage (V) Transient Thermal Impedance Z thJC (°C/W) Fig. 7 - On-State Voltage Drop Characteristics 10 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Steady State Value (DC Operation) 0.1 Single Pulse 25TTS.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 15-Nov-11 Document Number: 94384 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a)Recommended load line for rated di/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for <= 30% rated d i/ dt: 10 V, 65 ohms 10 tr = 1 µs, tp >= 6 µs (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) VGD TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 IGD (4) 25TTS.. Series 0.1 0.001 0.01 (3) (2) (1) Frequenc y Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 25 T T S 12 FP PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (25 = 25 A) 3 - Circuit configuration: T = Single thyristor 4 - Package: 5 - Type of silicon: 6 - Voltage code x 100 = VRRM 7 - FULL-PAK 8 - Environmental digit: T = TO-220AB Standard recovery rectifier 08 = 800 V 12 = 1200 V PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-25TTS08FPPbF 50 1000 Antistatic plastic tubes VS-25TTS08FP-M3 50 1000 Antistatic plastic tubes VS-25TTS12FPPbF 50 1000 Antistatic plastic tubes VS-25TTS12FP-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 15-Nov-11 www.vishay.com/doc?95072 TO-220FP PbF www.vishay.com/doc?95069 TO-220FP -M3 www.vishay.com/doc?95456 Document Number: 94384 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.61 0.38 0.9 0.7 2.54 TYP. R 0.7 (2 places) R 0.5 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments 4.8 4.6 Diodes 1. - Anode/open 2. - Cathode 3. - Anode 5° ± 0.5° Revision: 20-Jul-11 5° ± 0.5° Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95072 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000