VS-25TTS...SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 16 A FEATURES Anode 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified for industrial level 1 3 Cathode Gate D2PAK APPLICATIONS • Input rectification (soft start) • Vishay input diodes, switches and output rectifiers which are available in identical package outlines PRODUCT SUMMARY VT at 16 A < 1.25 V ITSM 300 A VRRM 800 V to 1600 V DESCRIPTION The VS-25TTS...SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 μm) copper 3.5 5.5 Aluminum IMS, RthCA = 15 °C/W 8.5 13.5 Aluminum IMS with heatsink, RthCA = 5 °C/W 16.5 25.0 UNITS A Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Sinusoidal waveform IRMS VALUES UNITS 16 A 25 VRRM/VDRM ITSM VT 16 A, TJ = 25 °C 800 to 1600 V 300 A 1.25 V dV/dt 500 V/μs dI/dt 150 A/μs - 40 to 125 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM, AT 125 °C mA VS-25TTS08SPbF 800 800 VS-25TTS12SPbF 1200 1200 VS-25TTS16SPbF 1600 1600 TJ VOLTAGE RATINGS PART NUMBER Document Number: 94383 Revision: 09-Jun-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 10 www.vishay.com 1 VS-25TTS...SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 16 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM 25 10 ms sine pulse, rated VRRM applied 300 10 ms sine pulse, no voltage reapplied 350 A I2√t t = 0.1 ms to 10 ms, no voltage reapplied 6300 VTM 16 A, TJ = 25 °C 1.25 V 12.0 mΩ 1.0 V rt VT(TO) IRM/IDM IH TJ = 125 °C TJ = 25 °C VS-25TTS08, VS-25TTS12 IL Anode supply = 6 V, resistive load, initial IT = 1 A Anode supply = 6 V, resistive load A2s A2√s 0.5 VR = Rated VRRM/VDRM TJ = 125 °C VS-25TTS16 Maximum latching current 16 630 Maximum on-state voltage drop Holding current UNITS 450 Maximum I2√t for fusing Maximum reverse and direct leakage current TC = 93 °C, 180° conduction half sine wave MAX. 10 ms sine pulse, rated VRRM applied I2t Threshold voltage VALUES TYP. 10 ms sine pulse, no voltage reapplied Maximum I2t for fusing On-state slope resistance TEST CONDITIONS 10 - 100 100 150 mA 200 Maximum rate of rise of off-state voltage dV/dt 500 V/μs Maximum rate of rise of turned-on current dI/dt 150 A/μs TRIGGERING PARAMETER SYMBOL Maximum peak gate power TEST CONDITIONS VALUES UNITS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Anode supply = 6 V, resistive load, TJ = - 10 °C Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD 60 Anode supply = 6 V, resistive load, TJ = 25 °C 45 Anode supply = 6 V, resistive load, TJ = 125 °C 20 Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq www.vishay.com 2 TEST CONDITIONS TJ = 25 °C TJ = 125 °C For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 0.9 4 μs 110 Document Number: 94383 Revision: 09-Jun-10 VS-25TTS...SPbF High Voltage Series Surface Mountable Phase Control SCR, 16 A Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS VALUES TJ, TStg Soldering temperature TS Maximum thermal resistance, junction to case RthJC UNITS - 40 to 125 For 10 s (1.6 mm from case) 240 DC operation 1.1 °C °C/W Typical thermal resistance, junction to ambient (PCB mount) RthJA (1) 40 2 Approximate weight g 0.07 oz. 25TTS08S Case style D2PAK (SMD-220) Marking device 25TTS12S 25TTS16S 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Tempera ture (°C) Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm] copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 R thJC (DC) = 1.1 °C/ W 120 Conduc tion Angle 110 30° 60° 90° 100 120° 180° 90 0 5 10 15 Average On-sta te Current (A) Fig. 1 - Current Rating Characteristics Document Number: 94383 Revision: 09-Jun-10 20 130 R thJC (DC) = 1.1 °C/ W 120 110 Conduction Period 100 90 60° 90° 120° 30° 180° DC 80 0 5 10 15 20 25 30 Average On-sta te Current (A) Fig. 2 - Current Rating Characteristics For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-25TTS...SPbF High Voltage Series Surface Mountable Phase Control SCR, 16 A 25 Pea k Half Sine Wave On-sta te Current (A) Maximum Averag e On-state Power Loss (W) Vishay Semiconductors 180° 120° 90° 60° 30° 20 15 RMSLimit 10 Conduc tion Angle 5 TJ= 125°C 0 0 4 8 12 16 350 300 250 200 150 20 1 Fig. 3 - On-State Power Loss Characteristics Peak Half Sine Wa ve On-state Current (A) 400 DC 180° 120° 90° 60° 30° 25 20 RMS Limit 15 Conduction Period 10 5 T J = 125°C 0 0 5 10 15 20 100 Fig. 5 - Maximum Non-Repetitive Surge Current 35 30 10 Number Of Equal Amplitude Half Cyc le Current Pulses (N) Avera ge On-state Current (A) Maximum Averag e On-state Power Loss (W) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 25 30 350 300 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Cond uc tion Ma y Not Be Ma inta ined. Initia l TJ = 125°C No Voltage Rea pp lied Rated VRRM Reapp lied 250 200 150 100 0.01 0.1 1 Avera ge On-sta te Current (A) Pulse Train Duration (s) Fig. 4 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ= 25°C TJ= 125°C 10 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94383 Revision: 09-Jun-10 VS-25TTS...SPbF High Voltage Series Transient Thermal Imped anc e Z thJC (°C/W) Surface Mountable Phase Control SCR, 16 A Vishay Semiconductors 10 Steady State Value (DC Opera tion) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Gate Characteristics Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for <= 30% rated d i/ dt: 10 V, 65 ohms 10 tr = 1 µs, tp >= 6 µs (1) (2) (3) (4) PGM = 40 W, tp = 1 ms PGM = 20 W, tp = 2 ms PGM = 8 W, tp = 5 ms PGM = 4 W, tp = 10 ms (a ) (b) VGD TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) IGD 0.1 0.001 (3) (2) (1) Frequency Limited by PG(AV) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Thermal Impedance ZthJC Characteristics Document Number: 94383 Revision: 09-Jun-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 VS-25TTS...SPbF High Voltage Series Surface Mountable Phase Control SCR, 16 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 25 T T S 12 S 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating (25 = 25 A) 3 - Circuit configuration: 4 - TRL PbF 8 9 T = Single thyristor Package: T = TO-220AC 5 - Type of silicon: 6 - Voltage rating: Voltage code x 100 = VRRM 7 - S = TO-220 D2PAK (SMD-220) version 8 - S = Standard recovery rectifier 08 = 800 V 12 = 1200 V 16 = 1600 V None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94383 Revision: 09-Jun-10 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1