VS-50TPS12L-M3 Datasheet

VS-50TPS12L-M3
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 50 A
FEATURES
2
(A)
• Designed
and
JEDEC®-JESD 47
qualified
according
to
• 150 °C maximum operating junction temperature
1
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
2
3
TO-247L
1 (K)
please
see
(G) 3
APPLICATIONS
Typical usage is in input rectification crowbar (soft start) and
AC switch motor control, UPS, welding, and battery charge.
PRODUCT SUMMARY
Package
TO-247L
IT(AV)
50 A
VDRM/VRRM
1200 V
VT (typ.)
1.1 V
IGT (typ.)
40 mA
TJ max.
150 °C
Diode variation
Single SCR
DESCRIPTION
The VS-50TPS12 high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching, and phase control applications. The glass
passivation technology used, has reliable operation up to
150 °C junction temperature.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM/VDRM
On-state voltage
VT
TEST CONDITIONS
VALUES
1200
50 A, TJ = 125 °C
Average rectified forward current
IT(AV)
50
IRMS
79
Non-repetitive peak surge current
Operating junction and storage temperature range
V
1.1
Maximum continuous RMS on-state current
Maximum rate of rise
UNITS
A
ITSM
630
dV/dt
1000
V/μs
TJ, TStg
-40 to +150
°C
VOLTAGE RATINGS
PART NUMBER
VS-50TPS12L-M3
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
1200
1300
10
Revision: 08-Feb-16
Document Number: 95867
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VS-50TPS12L-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum continuous RMS on-state
current as AC switch
IT(RMS)
Peak, one-cycle non-repetitive surge current
ITSM
I2t for fusing
I2t
I2√t for fusing
I2√t
TEST CONDITIONS
TYP.
TC = 112 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
MAX. UNITS
-
50
-
79
-
530
-
630
-
1405
10 ms sine pulse, no voltage reapplied
-
1986
t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C
-
19 850
10 ms sine pulse, rated VRRM applied
Initial TJ = TJ
maximum
Low level value of threshold voltage
VT(TO)1
-
0.83
High level value of threshold voltage
VT(TO)2
-
0.95
-
0.58
-
0.51
50 A, TJ = 25 °C
1.2
1.32
100 A, TJ = 25 °C
1.4
1.6
-
150
Low level value of on-state slope resistance
rt1
High level value of on-state slope resistance
rt2
On-state voltage
VT
Rate of rise of turned-on current
dI/dt
Holding current
IH
Latching current
IL
Reverse and direct leakage current
Rate of rise of off-state voltage
IRRM/IDRM
dV/dt
TJ = 125 °C
TJ = 25 °C
A
A2s
A2√s
V
mΩ
V
A/μs
-
300
-
350
TJ = 25 °C
-
0.05
TJ = 125 °C
-
10
TJ = TJ maximum, linear to 80 % VDRM, Rg-k = ∞ Ω
-
1000
V/μs
TYP.
MAX.
UNITS
Anode supply = 6 V, resistive load, TJ = 25 °C
mA
TRIGGERING
PARAMETER
Peak gate power
Average gate power
Peak gate current
Peak negative gate voltage
SYMBOL
TEST CONDITIONS
-
10
-
2.5
IGM
-
2.5
-VGM
-
10
PGM
PG(AV)
10 ms sine pulse, no voltage reapplied
TJ = -40 °C
Required DC gate voltage to trigger
VGT
TJ = 25 °C
Anode supply = 6 V resistive load
TJ = 150 °C
TJ = -40 °C
Required DC gate to trigger
IGT
DC gate voltage not to trigger
VGD
DC gate current not to trigger
IGD
TJ = 25 °C
Anode supply = 6 V resistive load
TJ = 150 °C
TJ = 150 °C, VDRM = rated value
-
1.6
-
1.5
-
1
-
160
45
100
W
A
V
mA
-
60
-
0.2
V
-
3
mA
TYP.
MAX.
UNITS
SWITCHING
PARAMETER
SYMBOL
Turn-on time
tgt
IT = 50 A, VD = 50 % VDRM, Igt = 300 mA, TJ = 25 °C
1.5
-
tq
IT = 50 A, VD = 80 % VDRM, dV/dt = 20 V/μs, tp = 200 μs
Igt = 100 mA, dI/dt = 10 A/μs, VR = 100 V, TJ = 150 °C
92
-
Turn-off time
TEST CONDITIONS
μs
Revision: 08-Feb-16
Document Number: 95867
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50TPS12L-M3
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
TYP.
MAX.
UNITS
°C
TJ, TStg
-40
150
RthJC
-
0.35
-
40
0.2
-
Maximum thermal resistance, junction to case
Maximum thermal resistance, junction to ambient
RthJA
Typical thermal resistance, case to heatsink
RthCS
Mounting torque
TEST CONDITIONS
Mounting surface, smooth, and greased
minimum
6 (5)
maximum
12 (10)
Marking device
Case style Super TO-247L
°C/W
kgf · cm
(lbf · in)
50TPS12L
ΔRthJ-HS CONDUCTION PER JUNCTION
SINE HALF-WAVE CONDUCTION
120°
90°
60°
30°
180°
120°
90°
60°
30°
0.143
0.166
0.208
0.299
0.490
0.099
0.168
0.223
0.311
0.494
150
RthJC (DC) = 0.35 °C/W
140
30°
Ø
60°
130
Conduction Angle
90°
120
120°
110
180°
100
90
0
10
20
30
40
50
60
90
180°
120°
90°
60°
30°
80
70
60
50
RMS limit
40
30
Ø
20
Conduction Angle
10
Tj = 150 °C
0
0
10
20
30
40
50
60
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
RthJC (DC) = 0.35 °C/W
140
DC°
Ø
Conduction Angle
30°
60°
120
90°
120°
110
180°
100
90
0
°C/W
Average On-state Current (A)
150
130
UNITS
Average On - state Current (A)
10
20
30
40
50
60
70
80
Max. Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature ( °C)
VS-50TPS12L-M3
RECTANGULAR WAVE CONDUCTION
180°
Max. Average On-state Power Loss (W)
DEVICE
110
180°
120°
90°
60°
30°
100
90
80
DC
70
60
RMS limit
50
40
Ø
30
Conduction Angle
20
10
Tj = 150 °C
0
0
10
20
30
40
50
60
70
80
Average On - state Current (A)
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Revision: 08-Feb-16
Document Number: 95867
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50TPS12L-M3
Vishay Semiconductors
Peak Half Sine Wave On- state Current (A)
Peak Half Sine Wave On - state Current (A)
www.vishay.com
560
At any rated load condition and with
rated VRRM applied following surge.
Initial Tj = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
510
460
410
360
310
260
1
10
100
Number Of Equal Amplitude
Half Cycle Current Pulse (N)
650
550
500
450
400
350
300
250
0.01
0.1
1
Number Of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous On - state Current (A)
Maximum non repetitive surge current
vs. pulse train duration. Control of
conduction may not be maintained.
Initial Tj = 150 °C
No voltage reapplied
rated VRRM reapplied
600
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
100
TJ = 125 °C
10
TJ = 25 °C
1
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous On - state Voltage (V)
ZthJC - Transient Thermal Impedance
(°C/W)
Fig. 7 - On-State Voltage Drop Characteristics
1
0.50
0.1
0.33
0.25
0.17
0.08
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Gate Characteristics
Revision: 08-Feb-16
Document Number: 95867
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50TPS12L-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
50
T
P
S
12
L
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current code (50 = 50 A)
3
-
Circuit configuration:
T = thyristor
4
-
5
-
P = TO-247 package
Type of silicon:
S = standard recovery rectifier
6
-
Voltage code (12 = 1200 V)
7
-
Package L = long lead
8
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-50TPS12L-M3
25
contact factory
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95626
Part marking information
www.vishay.com/doc?95007
Revision: 08-Feb-16
Document Number: 95867
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000