VS-ST300CL Series Datasheet

VS-ST300CL Series
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Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 560 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
TO-200AC (B-PUK)
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY
Package
TO-200AC (B-PUK)
Diode variation
Single SCR
IT(AV)
560 A
VDRM/VRRM
400 V to 2000 V
VTM
2.18 V
IGT
100 mA
TJ
-40 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2t
VALUES
UNITS
560
A
55
°C
1115
A
25
°C
50 Hz
8000
60 Hz
8380
50 Hz
320
60 Hz
292
VDRM/VRRM
kA2s
400 to 2000
tq
Typical
TJ
A
V
100
µs
-40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST300C..L
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
04
400
08
800
900
12
1200
1300
16
1600
1700
18
1800
1900
20
2000
2100
VRSM, MAXIMUM
IDRM/IRRM MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
AT TJ = TJ
V
MAXIMUM mA
500
50
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VS-ST300CL Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
8000
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2√t
for fusing
I2√t
°C
1115
t = 10 ms
I2t
A
55 (75)
t = 10 ms
t = 8.3 ms
No voltage
reapplied
8380
100 % VRRM
reapplied
7040
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
320
292
226
t = 0.1 to 10 ms, no voltage reapplied
3200
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.97
High level value of threshold voltage
VT(TO)2
(I > π x IT(AV)), TJ = TJ maximum
0.98
Low level value of on-state slope resistance
rt1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.74
High level value of on-state slope resistance
rt2
(I > π x IT(AV)), TJ = TJ maximum
0.73
Ipk = 1635 A, TJ = TJ maximum, tp = 10 ms sine pulse
2.18
VTM
IH
Typical latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
207
VT(TO)1
Maximum on-state voltage
A
6730
Low level value of threshold voltage
Maximum holding current
UNITS
560 (275)
DC at 25 °C heatsink temperature double side cooled
t = 8.3 ms
Maximum I2t for fusing
VALUES
600
1000
kA2√s
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 Ω, tr ≤ 1 μs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
VALUES
UNITS
1000
A/µs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs
100
SYMBOL
TEST CONDITIONS
VALUES
UNITS
µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
50
mA
Revision: 15-Apr-14
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VS-ST300CL Series
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Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
PGM
Maximum peak gate power
PG(AV)
Maximum average gate power
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
IGT
DC gate current required to trigger
10.0
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp ≤ 5 ms
3.0
IGD
DC gate voltage not to trigger
VGD
V
TJ = - 40 °C
200
-
TJ = 25 °C
100
200
50
-
TJ = 25 °C
TJ = 125 °C
DC gate current not to trigger
A
5.0
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
TJ = TJ maximum
Maximum gate current/
voltage not to trigger is the
maximum value which will not
trigger any unit with rated VDRM
anode to cathode applied
UNITS
W
20
TJ = TJ maximum, tp ≤ 5 ms
TJ = - 40 °C
VGT
MAX.
TYP.
TJ = TJ maximum, tp ≤ 5 ms
TJ = 125 °C
DC gate voltage required to trigger
VALUES
TEST CONDITIONS
2.5
-
1.8
3.0
1.1
-
mA
V
10.0
mA
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
TEST CONDITIONS
VALUES
TJ
-40 to 125
TStg
-40 to 150
RthJ-hs
RthC-hs
DC operation single side cooled
°C
0.11
DC operation double side cooled
0.05
DC operation single side cooled
0.011
DC operation double side cooled
0.006
Mounting force, ± 10 %
Approximate weight
Case style
UNITS
See dimensions - link at the end of datasheet
K/W
9800
(1000)
N
(kg)
250
g
TO-200AC (B-PUK)
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.012
0.010
0.008
0.008
120°
0.014
0.015
0.014
0.014
90°
0.018
0.018
0.019
0.019
60°
0.026
0.027
0.027
0.028
30°
0.045
0.046
0.046
0.046
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 15-Apr-14
Document Number: 94405
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST300CL Series
ST300C..L Series
(Single Side Cooled)
R thJ-hs (DC) = 0.11 K/W
120
110
100
90
Conduction Angle
80
70
30°
60
60° 90°
120°
50
180°
40
30
0
100
200
300
400
500
Maximum Allowable Heatsink Temperature (°C)
130
Vishay Semiconductors
130
ST300C..L Series
(Double Side Cooled)
R thJ-hs (DC) = 0.05 K/W
120
110
100
90
Conduction Period
80
70
60
30°
60°
50
90°
40
120°
180°
30
DC
20
0
200
400
600
800 1000 1200
Average On-state Current (A)
Fig. 4 - Current Ratings Characteristics
130
ST300C..L Series
(Single Side Cooled)
R thJ-hs (DC) = 0.11 K/W
120
110
100
90
80
Conduction Period
70
60
30°
50
60°
40
90°
120°
30
180°
20
0
DC
100 200 300 400 500 600 700
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
1600
180°
120°
90°
60°
30°
RMS Limit
1400
1200
1000
800
600
Conduction Angle
400
ST300C..L Series
T J = 125 °C
200
0
0
100 200 300 400 500 600 700
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
130
ST300C..L Series
(Double Side Cooled)
R thJ-hs (DC) = 0.05 K/W
120
110
100
90
Conduction Angle
80
70
60
30°
50
40
60°
90°
120°
30
180°
20
0
200
400
600
800
Maximum Average On-state Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
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1800
DC
1600 180°
120°
1400
90°
60°
1200
30°
1000
RMS Limit
800
Conduction Period
600
400
ST300C..L Series
T J = 125 °C
200
0
0
200
400
600
800 1000 1200
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
Revision: 15-Apr-14
Document Number: 94405
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST300CL Series
7500
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
7000
6500
6000
5500
5000
4500
4000
3500
ST300C..L Series
3000
1
10
100
8000
7500
7000
6500
6000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial Tj = 125 °C
No Voltage Reapplied
Rated Vrrm Reapplied
5500
5000
4500
4000
3500
ST300C..L Series
3000
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Instantaneous On-state Current (A)
10000
TJ = 25 °C
TJ = 125 °C
1000
ST300C..L Series
100
0
1
2
3
4
5
6
7
8
9
Instantaneous On-state Voltage (V)
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 μs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 μs
(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
tp = 4ms
tp = 2ms
tp = 1ms
tp = 0.66ms
(a)
(b)
VGD
0.1
0.001
Tj=-40 °C
1
T j=25 °C
Tj=125 °C
Transient Thermal Impedance Z thJ-hs (K/W)
Fig. 9 - On-State Voltage Drop Characteristcs
(1) (2) (3) (4)
IGD Device: ST300C..L Series
0.01
0.1
Frequency Limited by PG(AV)
1
10
100
Square Wave Pulse Duration (s)
Fig. 1 - Thermal Impedance ZthJ-hs Characteristics
Revision: 15-Apr-14
Document Number: 94405
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VS-ST300CL Series
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Instantaneous Gate Voltage (V)
1
Steady State Value
R thJ-hs = 0.11 K/W
(Single Side Cooled)
0.1
R thJ-hs = 0.05 K/W
(Double Side Cooled)
(DC Operation)
0.01
ST300C..L Series
0.001
0.001
0.01
0.1
Instantaneous Gate Current (A)
1
10
Fig. 10 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
ST
30
0
C
20
L
1
-
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
0 = Converter grade
5
-
C = Ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
L = PUK case TO-200AC (B-PUK)
8
-
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
9
-
Critical dV/dt:
None = 500 V/μs (standard selection)
L = 1000 V/μs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95076
Revision: 15-Apr-14
Document Number: 94405
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Outline Dimensions
Vishay Semiconductors
TO-200AC (B-PUK)
DIMENSIONS in millimeters (inches)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
0.7 (0.03) MIN.
34 (1.34) DIA. MAX.
2 places
27 (1.06) MAX.
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20° ± 5°
58.5 (2.3) DIA. MAX.
4.7 (0.18)
36.5 (1.44)
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95076
Revision: 01-Aug-07
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Revision: 02-Oct-12
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Document Number: 91000