UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)< 9mΩ @ VGS=10V, ID=33A * RDS(ON)< 18mΩ @ VGS=4.5V, ID=20A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT70N03L-TM3-T UT70N03G-TM3-T UT70N03L-TN3-T UT70N03G-TN3-T UT70N03L-TN3-R UT70N03G-TN3-R www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 1 of 5 QW-R502-269.c UT70N03 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 60 A Pulsed Drain Current IDM 195 A 53 W Power Dissipation PD Linear Derating Factor 0.36 W/°C Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 110 2.8 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250µA VDS=30V, VGS=0V VGS=±20V 30 VGS(TH) VDS=VGS, ID=250µA VGS=10V, ID=33A VGS=4.5V, ID =20A VDS=10V, ID=33A 1 RDS(ON) Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=20V, VGS=4.5V, Gate Source Charge QGS ID=33A Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V, VDS=15V, ID=33A, RD=0.45Ω, RG=3.3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage (Note 2) VSD IS=60A, VGS=0V Maximum Body-Diode Continuous Current IS VD=VG=0V, VS=1.3V Pulsed Source Current (Body Diode) ISM (Note 1) Note :1. Pulse width limited by safe operating area. Note :2. Pulse width < 300us, duty cycle < 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±100 3 9 18 V µA nA V mΩ 35 S 1485 245 170 pF pF pF 16.5 5 10.3 8.2 105 21.4 8.5 nC nC nC ns ns ns ns 1.3 60 195 V A A 2 of 3 QW-R502-269.c UT70N03 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-269.c