Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT70N03
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE
„
DESCRIPTION
The UT70N03 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
„
FEATURES
* RDS(ON)< 9mΩ @ VGS=10V, ID=33A
* RDS(ON)< 18mΩ @ VGS=4.5V, ID=20A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT70N03L-TM3-T
UT70N03G-TM3-T
UT70N03L-TN3-T
UT70N03G-TN3-T
UT70N03L-TN3-R
UT70N03G-TN3-R
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
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UT70N03
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
60
A
Pulsed Drain Current
IDM
195
A
53
W
Power Dissipation
PD
Linear Derating Factor
0.36
W/°C
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
110
2.8
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=30V, VGS=0V
VGS=±20V
30
VGS(TH)
VDS=VGS, ID=250µA
VGS=10V, ID=33A
VGS=4.5V, ID =20A
VDS=10V, ID=33A
1
RDS(ON)
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=20V, VGS=4.5V,
Gate Source Charge
QGS
ID=33A
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=10V, VDS=15V, ID=33A,
RD=0.45Ω, RG=3.3Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage (Note 2)
VSD
IS=60A, VGS=0V
Maximum Body-Diode Continuous Current
IS
VD=VG=0V, VS=1.3V
Pulsed Source Current (Body Diode)
ISM
(Note 1)
Note :1. Pulse width limited by safe operating area.
Note :2. Pulse width < 300us, duty cycle < 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
1
±100
3
9
18
V
µA
nA
V
mΩ
35
S
1485
245
170
pF
pF
pF
16.5
5
10.3
8.2
105
21.4
8.5
nC
nC
nC
ns
ns
ns
ns
1.3
60
195
V
A
A
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UT70N03
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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