Data Sheet

BFG520W; BFG520W/X
NPN 9 GHz wideband transistors
Rev. 04 — 21 November 2007
Product data sheet
IMPORTANT NOTICE
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- NXP Semiconductors, which will be used in future data sheets together with new contact
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In data sheets where the previous Philips references remain, please use the new links as
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depending on the version)
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
FEATURES
PINNING
• High power gain
DESCRIPTION
PIN
• Low noise figure
BFG520W
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
BFG520W/X
1
collector
collector
2
base
emitter
3
emitter
base
4
emitter
emitter
RF front end wideband applications in the GHz range,
such as analog and digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners (SATV) and repeater
amplifiers in fibre-optic systems.
handbook, halfpage
4
3
1
2
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
Top view
MARKING
TYPE NUMBER
MBK523
CODE
BFG520W
N3
BFG520W/X
N4
Fig.1 Simplified outline SOT343N.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
collector-base voltage
VCES
collector-emitter voltage RBE = 0
open emitter
MIN.
TYP. MAX. UNIT
−
−
20
V
−
−
15
V
IC
collector current (DC)
−
−
70
mA
Ptot
total power dissipation
Ts ≤ 85 °C
−
−
500
mW
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.35
−
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C −
17
−
dB
|S21|2
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 16
17
−
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz
1.1
1.6
dB
Rev. 04 - 21 November 2007
−
2 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
70
mA
Ptot
total power dissipation
Ts ≤ 85 °C; see Fig.2; note 1
−
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
Ts ≤ 85 °C; note 1
VALUE
UNIT
180
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBG248
600
handbook, halfpage
P tot
(mW)
400
200
0
0
50
100
150
o
200
T s ( C)
Fig.2 Power derating curve.
Rev. 04 - 21 November 2007
3 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)CBO
collector-base breakdown voltage
CONDITIONS
IC =10 µA; IE = 0
MIN.
20
TYP.
−
MAX.
UNIT
−
V
V(BR)CES
collector-emitter breakdown voltage IC = 10 µA; RBE = 0
15
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 10 µA; IC = 0
2.5
−
−
V
ICBO
collector leakage current
VCB = 6 V; IE = 0
−
−
50
nA
hFE
DC current gain
IC = 20 mA; VCE = 6 V; see Fig.3
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz;
see Fig.4
−
0.35
−
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C; see Fig.5
−
9
−
GHz
GUM
maximum unilateral power gain;
note 1
IC = 20 mA; VCE = 6 V; f = 900 MHz; −
Tamb = 25 °C
17
−
dB
−
11
−
dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
|S21|2
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz; 16
Tamb = 25 °C
17
−
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz
−
1.1
1.6
dB
Γs = Γopt; IC = 20 mA; VCE = 6 V;
f = 900 MHz
−
1.6
2.1
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz
−
1.85
−
dB
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE = 6 V; f = 900 MHz; −
RL = 50 Ω; Tamb = 25 °C
17
−
dBm
ITO
third order intercept point
note 2
−
26
−
dBm
Vo
output voltage
note 3
−
275
−
mV
d2
second order intermodulation
distortion
note 4
−
−50
−
dB
Notes
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero. G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 )
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz; measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz.
3. dim = −60 dB (DIN45004B); IC = 20 mA; VCE = 6 V; Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; RL = 75 Ω;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at fp + fq − fr = 793.25 MHz.
4. IC = 20 mA; VCE = 6 V; Vo = 75 mV; RL = 75 Ω; Tamb = 25 °C;
fp = 250 MHz; fq = 560 MHz; measured at fp + fq = 810 MHz.
Rev. 04 - 21 November 2007
4 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
MLB807
150
BFG520W; BFG520W/X
MLB808
0.6
handbook, halfpage
handbook, halfpage
C re
(pF)
h FE
100
0.4
50
0.2
0
0
10 1
1
10
I C (mA)
102
VCE = 6 V.
Fig.3
0
2.5
5
7.5
10
VCB (V)
IC = 0; f = 1 MHz.
DC current gain as a function of collector
current; typical values.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
MLB809
12
handbook, halfpage
fT
(GHz)
V CE =
6V
8
3V
4
0
1
10
I C (mA)
10 2
f = 1 GHz; Tamb = 25 °C.
Fig.5
Transition frequency as a function of
collector current; typical values.
Rev. 04 - 21 November 2007
5 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB810
30
handbook, halfpage
gain
gain
(dB)
(dB)
20
MLB811
30
handbook, halfpage
20
G max
MSG
G UM
G max
MSG
10
G UM
10
0
0
10
20
30
0
40
0
10
20
30
I C (mA)
f = 900 MHz; VCE = 6 V.
Fig.6
f = 2 GHz; VCE = 6 V.
Gain as a function of collector current;
typical values.
Fig.7
MLB812
50
Gain as a function of collector current;
typical values.
MLB813
50
handbook, halfpage
gain
(dB)
40
I C (mA)
handbook, halfpage
gain
(dB)
G UM
40
G UM
40
MSG
MSG
30
30
20
20
G max
G max
10
10
0
0
10
10
2
10
3
f (MHz)
10
IC = 5 mA; VCE = 6 V.
Fig.8
4
10
10
2
10
3
f (MHz)
10
4
IC = 20 mA; VCE = 6 V.
Gain as a function of frequency;
typical values.
Fig.9
Rev. 04 - 21 November 2007
Gain as a function of frequency;
typical values.
6 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB818
30
handbook, halfpage
MLB819
30
handbook, halfpage
d2
(dB)
d im
(dB)
40
40
50
50
60
60
70
70
0
10
20
30
I C (mA)
40
Vo = 275 mV; fp + fq − fr = 793.25 MHz; VCE = 6 V;
RL = 75 Ω; Tamb = 25 °C.
10
20
30
I C (mA)
40
Vo = 75 mV; fp + fq = 810 MHz; VCE = 6 V;
RL = 75 Ω Tamb = 25 °C.
Fig.10 Intermodulation distortion as a function
of collector current; typical values.
MLB820
4
0
Fig.11 Second order intermodulation distortion as a
function of collector current; typical values.
MLB821
20
handbook, halfpage
handbook, halfpage
G ass
(dB)
F
(dB)
f = 900 MHz
1000 MHz
15
3
f = 2000 MHz
2000 MHz
2
10
1000 MHz
900 MHz
500 MHz
1
5
0
1
10
I C (mA)
10 2
VCE = 6 V.
0
1
10
I C (mA)
10 2
VCE = 6 V.
Fig.12 Minimum noise figure as a function
of collector current; typical values.
Fig.13 Associated available gain as a function
of collector current; typical values.
Rev. 04 - 21 November 2007
7 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
MLB822
4
handbook, halfpage
BFG520W; BFG520W/X
MLB823
20
handbook, halfpage
I C = 5 mA
G ass
(dB)
F
(dB)
20 mA
15
3
10
2
IC =
20 mA
1
0
10 2
5
5 mA
10 3
f (MHz)
10 4
VCE = 6 V.
0
10 2
10 3
f (MHz)
10 4
VCE = 6 V.
Fig.14 Minimum noise figure as a function of
frequency; typical values.
Fig.15 Associated available gain as a function
of frequency; typical values.
Rev. 04 - 21 November 2007
8 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
90 o
unstable
region
handbook, full pagewidth
135 o
1.0
1
45 o
2
0.5
0.8
0.6
Γ opt
0.2
0.4
5
F min = 1.1 dB
180 o
0.2
0
stability
circle
1
0.5
0.2
2
5
0o
F = 1.5 dB
0
F = 2 dB
5
0.2
F = 3 dB
0.5
2
135 o
45 o
1
MLB824
1.0
90 o
f = 900 MHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
Fig.16 Common emitter noise figure circles; typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
(4)
0.2
0.4
5
(3)
0.2
(2)
180 o
0.2
0
1
0.5
2
5
0o
0
(1)
(5)
(1)
(2)
(3)
(4)
(5)
5
0.2
Γopt; Fmin = 1.85 dB.
F = 2 dB.
F = 2.5 dB.
F = 3 dB.
Γms; Gmax = 11.8 dB.
(6)
(7)
0.5
(8)
2
135 o
(6) G = 11 dB.
(7) G = 10 dB.
1
(8) G = 9 dB.
90 o
45 o
MLB825
f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
1.0
Fig.17 Common emitter noise figure circles; typical values.
Rev. 04 - 21 November 2007
9 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
3 GHz
0.2
180 o
0.2
0
1
0.5
2
5
0o
0
40 MHz
5
0.2
0.5
2
135 o
45 o
1
MLB814
1.0
90 o
VCE = 6 V; IC = 20 mA; Zo = 50 Ω.
Fig.18 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
40 MHz
180 o
3 GHz
50
40
30
20
0o
10
135 o
45 o
90 o
MLB815
VCE = 6 V; IC = 20 mA.
Fig.19 Common emitter forward transmission coefficient (S21); typical values.
Rev. 04 - 21 November 2007
10 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
90 o
handbook, full pagewidth
3 GHz
135 o
180 o
0.25
45 o
40 MHz
0.20
0.15
0.10
0o
0.05
135 o
45 o
90 o
MLB816
VCE = 6 V; IC = 20 mA.
Fig.20 Common emitter reverse transmission coefficient (S12); typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
3 GHz
0.2
0.5
5
2
135 o
45 o
1
MLB817
VCE = 6 V; IC = 20 mA; Zo = 50 Ω.
1.0
90 o
Fig.21 Common emitter output reflection coefficient (S22); typical values.
Rev. 04 - 21 November 2007
11 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
SPICE parameters for the BFG520W die
SEQUENCE No.
PARAMETER
VALUE
UNIT
SEQUENCE No.
PARAMETER
VALUE
(1)
UNIT
1
IS
1.016
fA
36
VJS
750.0
mV
2
BF
220.1
−
37 (1)
MJS
0.000
−
3
NF
1.000
−
38
FC
0.780
−
4
VAF
48.06
V
Note
5
IKF
510
mA
6
ISE
283
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
2.035
−
8
BR
100.7
−
9
NR
0.988
−
10
VAR
1.692
V
11
IKR
2.352
mA
12
ISC
24.48
aA
13
NC
1.022
−
14
RB
10.00
Ω
15
IRB
1.000
µA
16
RBM
10.00
Ω
17
RE
775.3
mΩ
C cb
handbook, halfpage
L1
LB
B
L2
B'
C be
C'
E'
C
Cce
LE
MBC964
RC
2.210
Ω
19
(1)
XTB
0.000
−
20
(1)
EG
1.110
eV
21 (1)
XTI
3.000
−
22
CJE
1.245
pF
23
VJE
600.0
mV
24
MJE
0.258
−
25
TF
8.616
ps
26
XTF
6.788
−
27
VTF
1.414
V
28
ITF
110.3
mA
Cbe
70
fF
29
PTF
45.01
deg
Ccb
50
fF
115
fF
18
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
Fig.22 Package equivalent circuit SOT343N.
List of components (see Fig.22)
DESIGNATION
VALUE
UNIT
30
CJC
447.6
fF
Cce
31
VJC
189.2
mV
L1
0.34
nH
32
MJC
0.070
−
L2
0.10
nH
33
XCJC
0.130
−
L3
0.25
nH
34
TR
543.7
ps
LB
0.40
nH
CJS
0.000
F
LE
0.40
nH
35
(1)
Rev. 04 - 21 November 2007
12 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT343N
D
E
B
A
X
HE
y
v M A
e
4
3
Q
A
A1
c
1
2
b1
bp
w M B
Lp
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-05-21
SOT343N
Rev. 04 - 21 November 2007
13 of 15
BFG520W; BFG520W/X
NXP Semiconductors
NPN 9 GHz wideband transistors
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
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Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 04 - 21 November 2007
14 of 15
BFG520W; BFG520W/X
NXP Semiconductors
NPN 9 GHz wideband transistors
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFG520W_N_4
20071121
Product data sheet
-
BFG520W_X_3
Modifications:
•
Page 2; text in Pinning table changed
BFG520W_X_3
19981002
Product specification
-
BFG520W_2
BFG520W_2
19950824
Product specification
-
BFG520W_1
BFG520W_1
19940829
-
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 21 November 2007
Document identifier: BFG520W_X_N_4