PHILIPS BFG505W

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D123
BFG505W; BFG505W/X
NPN 9 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Oct 02
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
FEATURES
PINNING
• High power gain
DESCRIPTION
PIN
• Low noise figure
BFG505W
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
BFG505W/X
1
collector
collector
2
base
emitter
3
emitter
base
4
emitter
emitter
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT2, CT3, PCN, DECT, etc.), radar detectors, pagers,
satellite television tuners (SATV).
handbook, halfpage
4
3
1
2
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
MARKING
Top view
TYPE NUMBER
MBK523
CODE
BFG505W
N0
BFG505W/X
N1
Fig.1 Simplified outline SOT343N.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
collector-base voltage
open emitter
VCES
collector-emitter voltage RBE = 0
MIN.
TYP. MAX. UNIT
−
−
20
V
−
−
15
V
IC
collector current (DC)
−
−
18
mA
Ptot
total power dissipation
Ts ≤ 85 °C
−
−
500
mW
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.2
−
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral
power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C
−
19
−
dB
12
−
dB
IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C
pF
|S21|2
insertion power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C
15
16
−
dB
F
noise figure
Γs = Γopt; IC = 1.25 mA; VCE = 6 V; f = 2 GHz
−
1.9
−
dB
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
18
mA
Ptot
total power dissipation
Ts ≤ 85 °C; see Fig.2; note 1
−
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
Ts ≤ 85 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBG248
600
handbook, halfpage
P tot
(mW)
400
200
0
0
50
100
150
o
200
T s ( C)
Fig.2 Power derating curve.
1998 Oct 02
3
VALUE
UNIT
180
K/W
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)CBO
collector-base breakdown voltage
CONDITIONS
IC = 2.5 µA ; IE = 0
MIN.
TYP.
MAX. UNIT
20
−
−
V
V(BR)CES
collector-emitter breakdown voltage IC = 10 µA; RBE = 0
15
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 2.5 µA; IC = 0
2.5
−
−
V
ICBO
collector leakage current
VCB = 6 V; IE = 0
−
−
50
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V see Fig.3
60
120
250
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C; see Fig.5
−
9
−
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz
−
0.3
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
0.4
−
pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz;
see Fig.4
−
0.2
−
pF
GUM
maximum unilateral power gain;
note 1
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
−
19
−
dB
IC = 5 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
−
12
−
dB
|S21|2
insertion power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
15
16
−
dB
F
noise figure
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
f = 900 MHz
−
1.2
1.7
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz
−
1.6
2.1
dB
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
f = 2 GHz
−
1.9
−
dB
PL1
output power at 1 dB gain
compression
IC = 5 mA; VCE = 6 V; f = 900 MHz;
RL = 50 Ω; Tamb = 25 °C
−
4
−
dBm
ITO
third order intercept point
note 2
−
10
−
dBm
Notes
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero. G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 )
2. IC = 5 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz.
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
MRA639
250
MLC032
0.4
handbook, halfpage
handbook, halfpage
C re
(pF)
hFE
200
0.3
150
0.2
100
0.1
50
0
10−3
10−2
10−1
1
10
0
102
IC (mA)
0
VCE = 6 V.
Fig.3
2
4
6
8
10
VCB (V)
IC = 0; f = 1 MHz.
DC current gain as a function of collector
current; typical values.
Fig.4
MLC033
12
handbook, halfpage
fT
(GHz)
VCE = 6 V
VCE = 3 V
8
4
0
10 1
1
10
I C (mA)
10 2
f = 1 GHz; Tamb = 25 °C.
Fig.5
1998 Oct 02
Transition frequency as a function of
collector current; typical values.
5
Feedback capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
MLC034
30
MLC035
30
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
MSG
G UM
20
20
G max
MSG
10
0
G UM
10
0
4
8
10
I C (mA)
0
12
f = 900 MHz; VCE = 6 V.
Fig.6
Gain as a function of collector current;
typical values.
Fig.7
MLC036
50
8
10
I C (mA)
12
Gain as a function of collector current;
typical values.
MLC037
50
handbook, halfpage
gain
G UM
(dB)
4
f = 2 GHz; VCE = 6 V.
handbook, halfpage
gain
0
G UM
(dB)
40
40
30
30
MSG
MSG
20
20
10
10
0
G max
0
102
10
103
f (MHz)
104
IC = 1.25 mA; VCE = 6 V.
Fig.8
1998 Oct 02
102
10
103
f (MHz)
104
IC = 5 mA; VCE = 6 V.
Gain as a function of frequency;
typical values.
Fig.9
6
Gain as a function of frequency;
typical values.
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
MLC038
4
MRA650
5
handbook, halfpage
handbook, halfpage
Fmin
F
(dB)
f = 900 MHz
(dB)
4
Gass
3
2
f = 2000 MHz
1
1000 MHz
900 MHz
500 MHz
2
1
I C (mA)
VCE = 6 V.
10
5
Fmin
1000 MHz
900 MHz
500 MHz
0
10−1
10
2000 MHz
2000 MHz
1
0
10 1
(dB)
15
1000 MHz
3
20
Gass
0
1
IC (mA)
−5
10
VCE = 6 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Associated available gain as a function of
collector current; typical values.
MLC039
4
MRA651
5
handbook, halfpageIC = 1.25 mA
handbook, halfpage
5 mA
Fmin
F
(dB)
(dB)
4
20
Gass
(dB)
15
Gass
3
3
10
2
5
2
I C = 5 mA
1
5 mA
1.25 mA
1
Fmin
0
1.25 mA
0
10 2
10 3
f (MHz)
0
102
10 4
VCE = 6 V.
f (MHz)
−5
104
VCE = 6 V.
Fig.12 Minimum noise figure as a function
of frequency; typical values.
1998 Oct 02
103
Fig.13 Associated available gain as a function
of frequency; typical values.
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
pot. unst.
region
handbook, full pagewidth
BFG505W; BFG505W/X
90°
1.0
1
135°
0.8
45°
2
0.5
0.6
stability
0.2
circle
180°
Fmin = 1. 2 dB
0.2
0
0.5
ΓOPT
F = 1.5 dB
2
5
1
0.4
5
0.2
0°
0
F = 2 dB
F = 3 dB
0.2
5
0.5
−135°
2
−45°
1
MRA652
1.0
−90°
f = 900 MHz; VCE = 6 V; IC = 1.25 mA; Zo = 50 Ω.
Fig.14 Common emitter noise figure circles; typical values.
handbook, full pagewidth
90°
pot. unst.
region
1.0
1
135°
0.8
45°
2
0.5
0.6
ΓOPT
0.2
stability
circle
180°
0.4
5
Fmin = 1. 9 dB
0.2
0.2
0
0.5
F = 2.5 dB
1
2
5
0°
0
F = 3 dB
F = 4 dB
5
0.2
−135°
0.5
2
−45°
1
MRA653
f = 2 GHz; VCE = 6 V; IC = 1.25 mA; Zo = 50 Ω.
−90°
Fig.15 Common emitter noise figure circles; typical values.
1998 Oct 02
8
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
3 GHz
1
2
5
0o
0
40 MHz
5
0.2
0.5
2
135 o
45 o
1
MLC040
1.0
90 o
VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
Fig.16 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
135 o
180 o
45 o
40 MHz
15
12
9
3 GHz
6
0o
3
135 o
45 o
90 o
MLC041
VCE = 6 V; IC = 5 mA.
Fig.17 Common emitter forward transmission coefficient (S21); typical values.
1998 Oct 02
9
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
90 o
handbook, full pagewidth
135 o
45 o
3 GHz
40 MHz
180 o
0.25
0.20
0.15
0.10
0o
0.05
135 o
45 o
90 o
MLC042
VCE = 6 ; IC = 5 mA.
Fig.18 Common emitter reverse transmission coefficient (S12); typical values.
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
0.2
5
3 GHz
0.5
2
135 o
45 o
1
MLC043
VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
1.0
90 o
Fig.19 Common emitter output reflection coefficient (S22); typical values.
1998 Oct 02
10
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
SPICE parameters for the BFG505W(/X) die
SEQUENCE No.
PARAMETER
VALUE
SEQUENCE No.
UNIT
PARAMETER
VALUE
(1)
UNIT
1
IS
134.1
aA
36
VJS
750.0
mV
2
BF
180.0
−
37 (1)
MJS
0.000
−
3
NF
0.988
−
38
FC
0.897
−
4
VAF
38.34
V
Note
5
IKF
150.0
mA
6
ISE
27.81
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
2.051
−
8
BR
55.19
−
9
NR
0.982
−
10
VAR
2.459
V
11
IKR
2.920
mA
12
ISC
17.45
aA
13
NC
1.062
−
14
RB
20.00
Ω
15
IRB
1.000
µA
16
RBM
20.00
Ω
17
RE
1.171
Ω
18
RC
4.350
Ω
C cb
handbook, halfpage
L1
LB
B
L2
B'
C be
C'
C
E'
Cce
LE
MBC964
L3
XTB
0.000
−
(1)
EG
1.110
eV
21 (1)
XTI
3.000
−
22
CJE
284.7
fF
23
VJE
600.0
mV
24
MJE
0.303
−
25
TF
7.037
ps
26
XTF
12.34
−
27
VTF
1.701
V
28
ITF
30.64
mA
Cbe
70
29
PTF
0.000
deg
Ccb
50
fF
115
fF
19 (1)
20
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
Fig.20 Package equivalent circuit SOT343N.
List of components (see Fig.20)
DESIGNATION
VALUE
UNIT
fF
30
CJC
242.4
fF
Cce
31
VJC
188.6
mV
L1
0.34
nH
32
MJC
0.041
−
L2
0.10
nH
33
XCJC
0.130
−
L3
0.25
nH
34
TR
1.332
ns
LB
0.40
nH
35 (1)
CJS
0.000
F
LE
0.40
nH
1998 Oct 02
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT343N
D
E
B
A
X
HE
y
v M A
e
4
3
Q
A
A1
c
1
2
b1
bp
w M B
Lp
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
SOT343N
1998 Oct 02
EUROPEAN
PROJECTION
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 02
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
NOTES
1998 Oct 02
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
NOTES
1998 Oct 02
15
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Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA60
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
125104/00/03/pp16
Date of release: 1998 Oct 02
Document order number:
9397 750 04345