UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT200N02 Power MOSFET 200 A, 20 V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT200N02 is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT200N02 is generally applied in synchronous Rectification or DC to DC convertor. FEATURES * VDS = 20V * ID= 200A * RDS(ON)=2.0mΩ(Typ.) @ VGS=10V * Low Gate Charge (Typical 84nC) * High Switching Speed * High Power and Current Handling Capability * RoHS Compliant SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT200N02L-TA3-T UTT200N02G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 1 G Pin Assignment 2 3 D S Packing Tube 1 of 6 QW-R502-576.a UTT200N02 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±20 V Continuous (Silicon Limited) ID 200 (Note 2) A Drain Current 800 A Pulsed (Note 3) IDM Single Pulsed Avalanche Energy (Note 4) EAS 864 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 6.0 V/ns Power Dissipation 214 W PD Derate above 25°C 1.43 W/°C Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A. 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L = 3mH, IAS =24A, VDD = 20V, RG = 25Ω, Starting TJ = 25°C 5. ISD ≤ 200A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 0.7 UNIT °C/W °C/W 2 of 6 QW-R502-576.a UTT200N02 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Breakdown Voltage Temperature △BVDSS/△TJ Reference to 25°C, ID=250µA Coefficient Drain-Source Leakage Current IDSS VDS=20V, VGS=0V Forward VGS=+20V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=80A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge at 10V QG(tot) Gate to Source Charge QGS VGS=10V, VDS=16V, ID=80A (Note 1, 2) Gate Charge Threshold to Plateau QGS2 Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=10V, ID=80A, RGEN=4.7Ω, VGS=10V (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS Current Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD ISD=200A, VGS=0V Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature Typical Characteristics UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX 20 UNIT V 30 1.0 2.0 mV/°C 10 +100 -100 µA nA nA 3.0 2.4 V mΩ 5490 7300 1220 1620 155 233 84 19 9.5 12 17 8 71 17 109 pF pF pF 44 26 152 44 nC nC nC nC ns ns ns ns 200 A 800 1.3 A V 3 of 6 QW-R502-576.a UTT200N02 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-576.a UTT200N02 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS QG 10V QGS QGD Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-576.a UTT200N02 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-576.a