Datasheet

UNISONIC TECHNOLOGIES CO., LTD
75N75
Power MOSFET
80A, 75V N-CHANNEL
POWER MOSFET
1

FEATURES
* RDS(ON)=11mΩ @VGS=10V, ID=40A
* Ultra low gate charge ( typical 117 nC )
* Fast switching capability
* Low reverse transfer Capacitance (CRSS= typical 240 pF )
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
75N75L-TA3-T
75N75G-TA3-T
75N75L-TF1-T
75N75G-TF1-T
75N75L-TF2-T
75N75G-TF2-T
75N75L-TF3-T
75N75G-TF3-T
75N75L-TQ2-T
75N75G-TQ2-T
75N75L-TQ2-R
75N75G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd.
TO-220F
TO-220
DESCRIPTION
The UTC 75N75 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast switching
speed, low thermal resistance, usually used at telecom and
computer application.

1
1
1
TO-220F1
TO-220F2
1
TO-263
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
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QW-R502-097.F
75N75

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
75
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
TC = 25°C
ID
80
A
Pulsed Drain Current (Note 2)
IDM
320
A
Single Pulsed Avalanche Energy (Note 3)
EAS
700
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
12
V/ns
TO-220/TO-263
300
W
Power Dissipation
TO-220F/ TO-220F1
PD
48
W
TO-220F2
50
W
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
3. Starting TJ=25°C, ID=40A, VDD=37.5V
4. ISD≤80A, di/dt≤300A/µs, VDD≤BVDSS, TJ≤TJMAX

THERMAL DATA
PARAMETER
SYMBOL
θJA
Junction to Ambient
Junction to Case
TO-220/TO-263
TO-220F/ TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJC
RATINGS
62.5
0.5
2.6
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
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QW-R502-097.F
75N75

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0 V, ID = 250 µA
VDS = 75 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 40 A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS = 0 V, VDS = 25 V
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD = 37.5V, ID =45A,
VGS=10V, RG=4.7Ω
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS = 60V, VGS = 10 V
Gate-Source Charge
QGS
ID = 80A
Gate-Drain Charge
QGD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2)
VSD
VGS = 0 V, IS = 80A
Continuous Source Current
IS
Pulsed Source Current (Note 1)
ISM
Reverse Recovery Time
tRR
IS = 80A, VDD = 25 V
dIF / dt = 100 A/µs
Reverse Recovery Charge
QRR
Note: 1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
75
2.0
3.0
9.5
1
100
-100
V
µA
nA
nA
4.0
11
V
mΩ
3700
773
86
133
208
354
246
430
70
102
132
660
pF
pF
pF
150
232
370
260
440
ns
ns
ns
ns
nC
nC
nC
1.5
80
320
V
A
A
ns
µC
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QW-R502-097.F
75N75

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VD
S
+
-
L
RG
Drive
r
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same
Type as
D.U.T.
VGS
VDD
1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
P.W.
Period
D=
P. W.
Period
VGS=10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-097.F
75N75

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
2A Switching Test Circuit
3A Gate Charge Test Circuit
4A Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2B Switching Waveforms
3B Gate Charge Waveform
4B Unclamped Inductive Switching Waveforms
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QW-R502-097.F
75N75
Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
450
300
400
Drain Current, ID (µA)
Drain Current, ID (µA)
250
200
150
100
50
0
350
300
250
200
150
100
50
0
0.5
1
1.5
2.0 2.5 3.0
0
3.5 4.0
0
Gate Threshold Voltage, VTH (V)
40
60
80
100
Drain-Source Breakdown Voltage, BVDSS(V)
Drain-Source On-State Resistance
Characteristics
2
20
Drain Current vs. Source to Drain Voltage
12
1.8
10
1.4
VGS=10V
ID=1A
1.2
Drain Current, ID (A)
Drain Current, ID (A)
1.6
VGS=10V
ID=20A
1
0.8
0.6
0.4
8
6
4
2
0.2
0
0
0
50
100
150
200
Drain to Source Voltage, VDS (mV)
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-097.F