SAMWIN SW P 75N75 Features General Description zN-Channel MOSFET zBVDSS (Minimum) zRDS(ON) (Typical) zID zQg (Typical) zPD (@TC=25 ℃) This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, Ultra low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at Automotive Applications. : 75 V : 9.7 mohm : 80 A : 100 nc : 220 W D G TO-220 SW P 75N75 S Absolute Maximum Ratings Symbol VDSS ID IDM Parameter Value Units Drain to Source Voltage 75 V Continuous Drain Current (@Tc=25℃) 80 A Continuous Drain Current (@Tc=100℃) 50 A 320 A ±20 V Drain Current Pulsed (Note 1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 700 mJ EAR Repetitive Avalanche Energy (Note 1) 20 mJ Peak Diode Recovery dv/dt (Note 3) 15 V/ns Total Power Dissipation (@Tc=25℃) 200 W Derating Factor above 25℃ 1.5 W/℃ -55~+160 ℃ dv/dt PD TSTG,TJ Operating junction temperature &Storage temperature Thermal Characteristics Value Symbol Parameter Units Min Typ Max RθJC Thermal Resistance, Junction-to-Case - 0.5 1 ℃/ W RθCS Thermal Resistance, Case-to-Sink - 0.5 - ℃/ W RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/ W 1/6 REV 1.01 07.06.05 SAMWIN Electrical Characteristics SW P 75N75 (Tc=25℃ unless otherwise noted) Value Symbol Parameter Units Test Conditions Min Typ Max 75 - - V Off Characteristics BVDSS Drain- Source Breakdown Voltage VGS=0V,ID=250uA △BVDSS/△ Tj Breakdown Voltage Temperature coefficient ID=250uA,referenced to 25℃ - 0.6 - V/℃ Drain-Source Leakage Current VDS=75V, VGS=0V - - 1 uA Drain-Source Leakage Current VDS=75V, VGS=0V, Tj = 150℃ - - 10 uA Gate-Source Leakage Current VGS=20V,VDS=0V - - 100 nA Gate-Source Leakage Reverse VGS=-20V, VDS=0V - - -100 nA 2.0 - 4.0 V - 9.7 10.8 mohm - 2700 - - 700 - - 80 - IDSS IGSS On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA RDS(ON) Static Drain-Source On-state Resistance VGS=10V,ID=40A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time - 23 - Rise Time VDD=38V,ID=45A - 12 - Turn-off Delay Time Vgs = 10 V - 60 - - 15 - - 100 140 - 20 35 - 40 45 Min. Typ. Max. Integral Reverse p-n Junction Diode in the MOSFET - - 80 - - 320 ns (Note4,5) Fall Time Total Gate Charge Gate-Source Charge VDS=60V,VGS=10V, ID=80A (Note4,5) Gate-Drain Charge (Miller Charge) nc Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Unit. IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage IS=80A,VGS=0V - 0.98 1.4 V trr Reverse Recovery Time - 100 - ns Qrr Reverse Recovery Charge IS=80A,VGS=0V, dIF/dt=100A/us - 500 - uc ※NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=19.5mH,IAS=40A, RG= 20 ohm, Starting TJ=25℃ 3. ISD≤80A,di/dt≤300A/us,VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300us,Duty Cycle≤1.5% 5. Essentially independent of operating temperature. REV 1.01 A 2/6 07.06.05 SW P 75N75 VGS 15V | 4.5V ID Drain Current[A] ID Drain Current[A] SAMWIN TC=25°C VDS=40V Pulse test Pulse test VD Drain-Source Voltage[V] VGS Gate-Source Voltage[V] Fig 2. Transfer Characteristics IDR Reverse Drain Current[A] RDS(ON)ON-Resistance[ohm] Fig 1. On-State Characteristics TJ=25°C ID Drain Current[A] 25℃ VGS=0V Pulse test VDS Drain-Source Voltage[V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage VGS Gate-Source Voltage[V] Fig 4. Reverse Drain Current vs. Allowable Case Temperature Ciss=Cgs+Ggd (Cds short) Coss=Cds+Cgd Crss=Cgd Capacitances[pF] 150℃ VGS=0V f=1MHz ID=80A QG Gate Charge [nC] VDS Drain-Source Voltage[V] Fig 6. Gate Charge Characteristics Fig 5. Capacitance Characteristics (Non-Repetitive) 3/6 REV 1.01 07.06.05 SW P 75N75 RDS(ON) (Normalized) ON-Resistance BVDSS (Normalized) Breakdown Voltage SAMWIN VGS=0V ID=250µA VGS=10V ID=40A TJ Junction Temperature [°C] TJ Junction Temperature [°C] Fig 8. On-Resistance Variation vs. Junction Temperature ID Drain Current[A] ID Drain Current[A] Fig 7. Breakdown Voltage Variation vs. Junction Temperature Limited by RDS(ON) TC=25°C TJ=150°C Single Pulse VDS Drain-Source Voltage[V] TC Case Temperature [°C] ZJC(t) Thermal Response Fig9. Maximum Safe Operating Fig 10. Maximum Drain Current Vs. Case Temperature 1.ZJC(t)=1.1°C/W Max. 0.5 2.Duty Factor D=t1/t2 | 3.TJM-TC=PDM·ZJC(t) 0.05 t1 Square Wave Pulse Duration [s] Fig 11. Transient Thermal Response Curve 4/6 REV 1.01 07.06.05 SAMWIN SW P 75N75 VGS Same Type as DUT 50KΩ Qg 10V 200nF 300nF Qgd Qgs VDS VGS DUT 1mA Charge Fig 12. Gate Charge test Circuit & Waveforms RL VDS VDD (0.5 rated VDS) 10V Pulse Generator RG DUT VDS Vin 90% 10% tf td(on) tr ton td(off) toff Fig 13. Switching test Circuit & Waveforms L 1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD VDS VDD BVDSS IAS RG VDD DUT ID(t) VDS(t) 10V tp Time Fig 14. Unclamped Inductive Switching test Circuit & Waveforms 5/6 REV 1.01 07.06.05 SAMWIN SW P 75N75 + DUT VDS __ L Driver VDD RG Same Type as DUT VGS ● ● VGS (Driver) dv/dt controlled by RG Is controlled by pulse period Gate Pulse Width D = --------------------------Gate Pulse Period 10V IFM,Body Diode Forward Current di/dt IS (DUT) IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VDD Vf Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms 6/6 REV 1.01 07.06.05 SAMWIN SW P 75N75 Package Dimensions TO-220 • • Package Dimensions TO-220 REV 1.01 A(mm) 9.66~10.28 A2(mm) 9.80~10.20 B(mm) 15.6~15.8 C(mm) 12.70~14.27 D(mm) 4.30~4.70 E(mm) 8.59~9.40 F(mm) typical 2.54 G1(mm) 1.32~1.72 G2(mm) 0.70~0.95 G3(mm) 0.4~0.60 H(mm) dia. 3.50~3.83 I(mm) 2.7~2.9 J(mm) 15.70~16.25 K(mm) 2.20~2.90 L(mm) 1.15~1.40 a(degree) 45° a2(degree) 3°±0.5° a3(degree) 3°±0 07.06.05 SAMWIN SW P 75N75 HISTORY Issue No Changed Characteristics V 1.01 REV 1.01 Origination Date Issuer 2007.7.15 07.06.05