UNISONIC TECHNOLOGIES CO., LTD 40N15 Power MOSFET 40A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 40N15 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. FEATURES * RDS(ON) < 50mΩ @ VGS=10V, ID=20A * High Switching Speed * High Current Capacity ORDERING INFORMATION Ordering Number Lead Free Halogen Free 40N15L-TA3-T 40N15G-TA3-T 40N15L-TF1-T 40N15G-TF1-T 40N15L-TF2-T 40N15G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 1 G G G Pin Assignment 2 D D D 3 S S S Packing Tube Tube Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-882.C 40N15 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 150 V Gate-Source Voltage VGSS ±25 V Continuous ID 40 A Drain Current Pulsed IDM 180 A Avalanche Current IAR 45.6 A Single Pulsed EAS 650 mJ Avalanche Energy 21 mJ Repetitive EAR Peak Diode Recovery dv/dt dv/dt 7 V/ns TO-220 166 W Power Dissipation PD TO-220F1/ TO-220F2 210 W Junction Temperature TJ -50 ~ +150 °C Storage Temperature Range TSTG -50 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL θJA Junction to Ambient Junction to Case TO-220 TO-220F1/ TO-220F2 θJC RATINGS 62.5 0.9 0.7 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS=0V, ID=250µA VGS=0V, VDS=150V VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=50V, Gate to Source Charge QGS ID=1.3A, IG=100µA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VGS=0~10V, VDD=30V, ID=0.5A, RG=25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=40A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=30A dIF/dt=100A/µs Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 150 2.2 900 +100 -100 V nA nA nA 3.8 50 V mΩ 2500 520 100 pF pF pF 85 15 41 35 320 210 200 nC nC nC ns ns ns ns 40 160 1.48 150 0.9 A A V ns µC 2 of 3 QW-R502-882.C 40N15 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-882.C