UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES * RDS(ON) < 0.1Ω @ VGS=10V, ID=7.8A * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-261.J 19N10 Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 19N10L-T3P-T 19N10G-T3P-T 19N10L-TA3-T 19N10G-TA3-T 19N10L-TF3-T 19N10G-TF3-T 19N10L-TF1-T 19N10G-TF1-T 19N10L-TM3-T 19N10G-TM3-T 19N10L-TMS-T 19N10G-TMS-T 19N10L-TMS2-T 19N10G-TMS2-T 19N10L-TMS4-T 19N10G-TMS4-T 19N10L-TN3-R 19N10G-TN3-R 19N10L-TQ2-R 19N10G-TQ2-R 19N10L-TQ2-T 19N10G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-3P TO-220 TO-220F TO-220F1 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel Tube MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-261.J 19N10 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ± 25 V TC=25°C 15.6 A Continuous Drain Current ID TC=100°C 9.8 A Pulsed Drain Current (Note 2) IDM 62.4 A Avalanche Current (Note 2) IAR 15.6 A Single Pulsed Avalanche Energy (Note 3) EAS 220 mJ Repetitive Avalanche Energy (Note 2) EAR 5.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6.0 V/ns TO-220/TO-263 62.5 W TO-220F/TO-220F1 38 W TO-251/TO-251S Power Dissipation PD TO-251S2/TO-251S4 50 W TO-252 TO-3P 178 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=1.8mH, IAS=15.6A, VDD=25V, RG=25 Ω, Starting TJ=25°C 4. ISD≤19A, di/dt ≤ 300A/µs, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-263 TO-251/TO-251S Junction to Ambient TO-251S2/TO-251S4 TO-252 TO-3P TO-220/TO-263 TO-220F/TO-220F1 TO-251/TO-251S Junction to Case TO-251S2/TO-251S4 TO-252 TO-3P SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS UNIT 62.5 °C/W 50 °C/W 40 2.0 3.95 °C/W °C/W °C/W 2.5 °C/W 0.7 °C/W 3 of 8 QW-R502-261.J 19N10 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL TEST CONDITIONS BVDSS VGS=0V, ID=250µA ID=250µA, ∆BVDSS/∆TJ Referenced to 25°C VDS=100V, VGS=0V IDSS VDS=100V, TJ=125°C VGS=25V, VDS=0V IGSS VGS=-25V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=7.8A Forward Transconductance gFS VDS=40V, ID=7.8A (Note 1) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, ID=1.3A, VGS=10V Gate Source Charge QGS (Note 1, 2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=30V, ID=0.5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=15.6A Maximum Body-Diode Continuous Current IS Maximum Pulsed Drain-Source Diode ISM Forward Current Body Diode Reverse Recovery Time tRR VGS= 0V, IS=19A, dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test : Pulse width ≤300µs, Duty cycle≤ 2% Note: 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 V 0.1 V/°C 1 10 100 -100 µA µA 0.078 4.0 0.1 11 V Ω S 600 165 32 780 215 40 pF pF pF 19 6 6 45 70 165 78 25 60 90 250 90 nC nC nC ns ns ns ns 1.5 15.6 V A 62.4 A 2.0 78 200 nA ns nC 4 of 8 QW-R502-261.J 19N10 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-261.J 19N10 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤ 1μs tD(OFF) tF tR Duty Factor≤0.1% Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms QG 10V QGS QGD VGS Charge Fig. 3A Gate Charge Test Circuit VDS Fig. 3B Gate Charge Waveform L BVDSS IAS R VDD D 10V D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 6 of 8 QW-R502-261.J 19N10 Power MOSFET TYPICAL CHARACTERISTICS Transient Thermal Response Curve Safe Operating Area 1 Operation in This Area is Limited by RDS(on) D=0.5 102 10µs 0.2 0.1 0.1 10 100µs 1ms 1 0.05 DC 0.02 0.01 Notes: 1. θJC (t) = 2.5°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) Single Pulse 0.01 10-5 -4 100 -3 -2 -1 0 10 10 10 10 10 10 Square Wave Pulse Duration, t1 (sec) 1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10-1 100 10ms Notes: 1. TJ=25°C 2. TJ=150°C 3. Single Pulse 101 102 Drain-Source Voltage, VDS (V) 7 of 8 QW-R502-261.J 19N10 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-261.J