Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N65
Power MOSFET
4A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 4N65 is a high voltage power MOSFET
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristic. This power
MOSFET is usually used in high speed switching applications
including power supplies, PWM motor controls, high efficient
DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL
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QW-R502-397.N
4N65

Power MOSFET
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
4N65L-TA3-T
4N65G-TA3-T
TO-220
4N65L-TF1-T
4N65G-TF1-T
TO-220F1
4N65L-TF2-T
4N65G-TF2-T
TO-220F2
4N65L-TF3-T
4N65G-TF3-T
TO-220F
4N65L-TF3T-T
4N65G-TF3T-T
TO-220F3
4N65L-TM3-T
4N65G-TM3-T
TO-251
4N65L-TMS-T
4N65G-TMS-T
TO-251S
4N65L-TMS2-T
4N65G-TMS2-T
TO-251S2
4N65L-TMS4-T
4N65G-TMS4-T
TO-251S4
4N65L-TN3-R
4N65G-TN3-R
TO-252
4N65L-TND-R
4N65G-TND-R
TO-252D
4N65L-T2Q-T
4N65G-T2Q-T
TO-262
4N65L-TQ2-R
4N65G-TQ2-R
TO-263
4N65L-TQ2-T
4N65G-TQ2-T
TO-263
4N65G-E-K08-5060-R
DFN-8(5×6)
Note: Pin Assignment: G: Gate D: Drain S: Source
1
G
G
G
G
G
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
D
D
D
D
D
S
Pin Assignment
3 4 5 6
S - - S - - S - - S - - S - - S - - S - - S - - S - - S - - S - - S - - S - - S - - S G D D
7
D
8
D
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
Tape Reel
Tube
Tape Reel
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2
4N65L-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
TF3: TO-220F, TF3T: TO-220F3, TM3: TO-251,
TMS: TO-251S, TMS2: TO-251S2, TN3: TO-252,
TMS4: TO-251S4, TND: TO-252D, T2Q: TO-262,
TQ2: TO-263, K08-5060: DFN-8(5×6)
(3) L: Lead Free, G: Halogen Free and Lead Free

MARKING
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
MARKING
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
TO-263
DFN-8(5×6)
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QW-R502-397.N
4N65

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note2)
IAR
4.4
A
Continuous
ID
4.0
A
Drain Current
16
A
Pulsed (Note2)
IDM
Single Pulsed (Note3)
EAS
260
mJ
Avalanche Energy
10.6
mJ
Repetitive (Note2)
EAR
Peak Diode Recovery dv/dt (Note4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
106
W
TO-220F/TO-220F1
35
W
TO-220F3
TO-220F2
36
W
Power Dissipation
PD
TO-251/ TO-251S
TO-251S2/TO-251S4
50
W
TO-252/TO-252D
DFN-8(5×6)
30
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
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SYMBOL
RATINGS
UNIT
62.5
°С/W
110
°С/W
75
1.18
°С/W
°С/W
3.5
°С/W
3.4
°С/W
2.5
°С/W
4.17
°С/W
θJA
θJC
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
VGS = 0 V, ID = 250μA
650
VDS = 650 V, VGS = 0 V
VDS = 480 V, TC =125°С
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ID=250μA, Referenced to 25°C
Forward
IGSS
Reverse
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25 V, VGS = 0V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDS = 325V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS= 520V,ID= 4.0A,
Gate-Source Charge
QGS
VGS= 10V (Note 1, 2)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 4.4A
Maximum Continuous Drain-Source
IS
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0V, IS = 4.4A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
Gate-Source Leakage Current
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MIN TYP MAX UNIT
10
100
100
-100
V
μA
μA
nA
nA
V/°С
2.4
4.0
2.5
V
Ω
670
70
23
750
90
26
pF
pF
pF
45
100
200
130
100
17
20
85
140
240
150
120
19
26
ns
ns
ns
ns
nC
nC
nC
1.4
V
4.4
A
17.6
A
0.6
2.0
250
1.5
ns
μC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
3.0
Drain-Source On-Resistance,
RDS(ON) (Normalized) (Ω)
1.2
Drain-Source Breakdown Voltage,
BVDSS (Normalized) (V)

Power MOSFET
1.1
1.0
0.9
Note:
1. VGS=0V
2. ID=250µA
0.8
-50
-100
10
0
100
50
150
200
2.5
2.0
1.5
1.0
Note:
1. VGS=10V
2. ID=4A
0.5
0.0
-100
100
50
150
Junction Temperature, TJ (°С)
Junction Temperature, TJ (°С)
On-State Characteristics
Transfer Characteristics
VGS
10V
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
200
10
Top:
25°С
1
5.0V
150°С
1
0.1
Notes:
1. 250µs Pulse Test
2. TC=25°С
0.1
0
-50
1
10
Drain-to-Source Voltage, VDS (V)
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Notes:
1. VDS=50V
2. 250µs Pulse Test
0.1
2
4
6
8
10
Gate-Source Voltage, VGS (V)
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TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
(Non-Repetitive)
1200
1000
12
10
Ciss
800
600
Gate Charge Characteristics
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
Coss
Notes:
1. VGS=0V
2. f = 1MHz
0
0.1
VDS=120V
6
4
400
200
VDS=300V
VDS=480V
8
2
Crss
Note: ID=4A
0
1
0
10
5
10
15
20
25
Total Gate Charge, QG (nC)
Drain-SourceVoltage, VDS (V)
PD (w)
Thermal Response, θJC (t)

Power MOSFET
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QW-R502-397.N
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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