Datasheet

UNISONIC TECHNOLOGIES CO., LTD
3N65
Power MOSFET
3A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 3N65 is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
high rugged avalanche characteristics. This power MOSFET is
usually used in high speed switching applications at power
supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.

FEATURES
* RDS(ON) < 3.8Ω @ VGS = 10V, ID = 1.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N65L-TA3-T
3N65G-TA3-T
3N65L-TF1-T
3N65G-TF1-T
3N65L-TF3-T
3N65G-TF3-T
3N65L-TM3-T
3N65G-TM3-T
3N65L-TMS-T
3N65G-TMS-T
3N65L-TMS2-T
3N65G-TMS2-T
3N65L-TMS4-T
3N65G-TMS4-T
3N65L-TN3-R
3N65G-TN3-R
3N65L-T60-K
3N65G-T60-K
3N65G-K08-5060-R
Note: Pin Assignment: G: Gate
D: Drain
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-126
DFN-8(5×6)
S: Source
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
S
Pin Assignment
3
4
5
6
S
S
S
S
S
S
S
S
S
S
G
D
D
7
D
8
D
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Bulk
Tape Reel
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QW-R502-590.F
3N65

Power MOSFET
MARKING
Package
TO-220
TO-220F
TO-220F1
TO-251
MARKING
TO-251S
TO-251S2
TO-251S4
TO-252
TO-126
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-590.F
3N65

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
3.0
A
Continuous Drain Current
ID
3.0
A
Pulsed Drain Current (Note 2)
IDM
12
A
Single Pulsed (Note 3)
EAS
200
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
75
TO-220F/TO-220F1
34
TO-251/TO-252/TO-251S
50
Power Dissipation
PD
W
TO-251S2/TO-251S4
TO-126
17
DFN-8(5×6)
25
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
SYMBOL
RATING
TO-220/TO-220F
62.5
TO-220F1
TO-251/TO-252/TO-251S
110
Junction to Ambient
θJA
TO-251S2/TO-251S4
TO-126
132
DFN-8(5×6)
75 (Note)
TO-220
1.67
TO-220F/TO-220F1
3.68
TO-251/TO-252/TO-251S
2.5
Junction to Case
θJC
TO-251S2/TO-251S4
TO-126
7.36
DFN-8(5×6)
5 (Note)
Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
UNIT
°C/W
°C/W
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QW-R502-590.F
3N65

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
VGS = 0 V, ID = 250 μA
VDS = 650 V, VGS = 0 V
Forward
VGS = 30 V, VDS = 0 V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD = 30V, ID = 0.5A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS= 50V, ID=1.3A,
Gate-Source Charge
QGS
VGS= 10 V (Note 1, 2)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 3.0 A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
650
0.6
2.0
V
10
μA
100 nA
-100 nA
V/°C
2.8
4.0
3.8
V
Ω
430
50
11
500
65
20
pF
pF
pF
32
64
115
60
51
13
11
45
80
140
75
70
ns
ns
ns
ns
nC
nC
nC
1.4
V
3.0
A
12
A
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QW-R502-590.F
3N65

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-590.F
3N65

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-590.F
Drain Current, ID (A)
Drain-Source On-Resistance, RDS(ON)
(Normalized)
Drain-Source Breakdown Voltage, BVDSS
(Normalized)

Thermal Response, θJC (t)
3N65
Power MOSFET
TYPICAL CHARACTERISTICS
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QW-R502-590.F
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3N65

Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
On State Current vs.
Allowable Case Temperature
Safe Operating Area
Operation in This Area is Limited by RDS(on)
101
10
100µs
1ms
10ms
100
1
DC
10-1
10-2
100
Notes:
1. TJ=25°C
2. TJ=150°C
3. Single Pulse
Notes:
1. VGS=0V
2. 250µs Test
1
10
10
2
650
10
3
Drain-Source Voltage, VDS (V)
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1.8
Source-Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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