EMZ2 / UMZ2N / FMY4A / IMZ2A Transistors Power management (dual transistors) EMZ2 / UMZ2N / FMY4A / IMZ2A !External dimensions (Units : mm) (3) (4) (5) (2) (6) 0.5 IMZ2A (4) (5) (6) Each lead has same dimensions ROHM : EMT6 (6) (3) (2) (1) UMZ2N (5) (5) Tr1 1.25 Tr2 2.1 0to0.1 (1) 0.7 0.15 0.1Min. ROHM : UMT6 EIAJ : SC-88 !Absolute maximum ratings (Ta = 25°C) °C 2.9 (3) (5) Each lead has same dimensions Part No. EMZ2 UMZ2N FMY4A IMZ2A (5) (6) IMZ2A Package Marking Code Basic ordering unit (pieces) EMT6 Z2 UMT6 Z2 SMT5 Y4 SMT6 Z2 (4) !Package, marking, and packaging specifications 0.95 0.95 1.9 (4) 0.3to0.6 ROHM : SMT5 EIAJ : SC-74A T2R TR T148 T108 8000 3000 3000 3000 1.6 0.15 2.8 0.3to0.6 ROHM : SMT6 EIAJ : SC-74 1.1 °C 1.6 2.8 0.8 150 −55~+150 ∗1 ∗2 (1) mW (2) 300 (TOTAL) 0.95 0.95 1.9 2.9 per element must not be exceeded. ∗12 120mW ∗ 200mW per element must not be exceeded. V V mA (3) Tj Tstg 50 −6 7 −150 150 150 (TOTAL) 0.8 Junction temperature Storage temperature PC −50 FMY4A V (2) VEBO IC Unit (1) Emitter-base voltage Collector current Collector power EMZ2, UMZ2N dissipation FMY4A, IMZ2A Tr2 60 0to0.1 VCBO VCEO 0.3 Collector-base voltage Collector-emitter voltage Limits Tr1 −60 Each lead has same dimensions 0.15 Symbol 0.3 Parameter 0to0.1 (2) (1) (6) (4) 0.2 FMY4A (3) (3) (5) Tr1 (2) (4) Tr2 Tr1 (4) Tr2 2.0 (1) 1.3 (2) 0.65 (3) (1) 0.65 EMZ2 / UMZ2N 1.2 1.6 0.13 !Equivalent circuits 0.5 0.5 1.0 1.6 EMZ2 0.22 !Feature 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. Each lead has same dimensions 1/2 EMZ2 / UMZ2N / FMY4A / IMZ2A Transistors !Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO −60 −50 − − − − − V V Conditions IC = −50µA IC = −1mA − −0.1 V µA IE = −50µA − − −0.1 µA VEB = −6V VCE(sat) − − − −0.5 V IC/IB = −50mA/−5mA hFE 120 − 560 − VCE = −6V , IC = −1mA ICBO IEBO −6 − VCB = −60V VCE = −12V , IE = 2mA , f = 100MHz VCB = −12V , IE = 0A , f = 1MHz fT − 140 − MHz Cob − 4 5 pF Symbol Min. Typ. Max. Unit BVCBO BVCEO 60 50 − − − − V V IC = 50µA IC = 1mA BVEBO 7 − − ICBO − − − 0.1 0.1 V µA IE = 50µA VCB = 60V µA VEB = 7V − hFE − 120 fT − Cob − ∗ Transition frequency of the device. ∗ Tr2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Transition frequency of the device. IEBO VCE(sat) − 0.4 560 V − 180 − MHz 2 3.5 pF − Conditions IC/IB = 50mA/5mA VCE = 6V , IC = 1mA VCE = 12V , IE = −2mA , f = 100MHz VCB = 12V , IE = 0A , f = 1MHz ∗ 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0