EMA4 / UMA4N / FMA4A Transistors General purpose (dual digital transistors) EMA4 / UMA4N / FMA4A zExternal dimensions (Unit : mm) zFeature 1) Two DTA114T chips in a EMT or UMT or SMT package. zEquivalent circuits 0.5 0.13 (5) R1 R1 R1 (4) (5) (2) (1) Each lead has same dimensions ROHM : EMT5 EMA4 UMA4N FMA4A 1.25 EMT5 UMT5 SMT5 2.1 Marking Code A4 A4 T2R TR A4 T148 Basic ordering unit (pieces) 8000 3000 3000 0.1Min. 0to0.1 Type Package 0.15 (5) zPackage, marking, and packaging specifications (2) 0.2 (4) UMA4N 1.3 R1 2.0 (4) 0.65 0.65 (3) 0.9 (1) 0.7 (2) FMA4A (1) 1.2 1.6 (3) (3) (2) (5) (1) EMA4 / UMA4N (3) (4) 0.5 0.5 1.0 1.6 0.22 EMA4 Each lead has same dimensions ROHM : UMT5 EIAJ : SC-88A zAbsolute maximum ratings (Ta=25°C) VEBO −5 V mA mW 300(TOTAL) FMA4A Junction temperature Storage temperature −100 150(TOTAL) Tj 150 °C Tstg −55 to +150 °C ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. (4) IC Pd ∗1 (5) EMA4 / UMA4N ∗2 1.6 2.8 0.3to0.6 ROHM : SMT5 EIAJ : SC-74A 0to0.1 Power dissipation (1) Collector current FMA4A 2.9 V Emitter-base voltage 1.1 −50 0.95 0.95 1.9 VCEO 0.8 V Collector-emitter voltage (3) Unit −50 (2) Limits VCBO 0.15 Parameter 0.3 Symbol Collector-base voltage Each lead has same dimensions Rev.A 1/2 EMA4 / UMA4N / FMA4A Transistors zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −50 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO −5 − − − − −0.5 V µA IE=−50µA VCB=−50V Emitter cutoff current Collector-emitter saturation voltage IEBO − − −0.5 µA VEB=−4V VCE(sat) − − −0.3 V IC/IB=−10mA/−1mA VCE=−5V, IC=−1mA hFE 100 250 600 − Transition frequency fT − 250 − MHz Input resistance R1 7 10 13 kΩ DC current transfer ratio Conditions VCE=−10V, IE=5mA, f=100MHz ∗ − ∗Transition frequency of the device. 1k VCE=−5V DC CURRENT GAIN : hFE 500 200 100 50 Ta=100°C 25°C −40°C 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristics curves −1 lC/lB=20 −500m −200m −100m Ta=100°C 25°C −40°C −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1