EMX5 / UMX5N / IMX5 Transistors High transition frequency (dual transistors) EMX5 / UMX5N / IMX5 zExternal dimensions (Unit : mm) zFeatures 1) Two 2SC3838K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=3.2GHz) 3) Low output capacitance. (Cob=0.9pF) (5) IMX5 (5) Each lead has same dimensions ROHM : EMT6 (6) (5) (6) (3) (2) (2) (5) (1) (6) (4) 0.2 Tr1 (3) (4) Tr1 (1) Tr2 0.65 UMX5N Tr2 1.25 2.0 (4) 1.3 (1) 0.65 (2) (1) 0.5 zEquivalent circuits (3) (2) 1.2 1.6 0.13 (6) EMX5 / UMX5N (3) (4) 0.5 0.5 1.0 1.6 0.22 EMX6 VEBO 3 V IC 50 mA IMX5 150(TOTAL) Pc 300(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 ∗2 1.6 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. 0.15 2.8 0.3Min. zPackage, marking, and packaging specifications Type EMX5 UMX5N IMX5 Package EMT5 UMT6 SMT6 Marking Code X5 T2R X5 TR X5 T108 Basic ordering unit (pieces) 8000 3000 3000 ROHM : SMT6 EIAJ : SC-74 1.1 EMX5 / UMX5N 0.8 Collector power dissipation IMX5 0~0.1 Collector current 0.95 0.95 1.9 2.9 Emitter-base voltage Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 (1) V (2) V 11 (3) 20 VCEO (6) VCBO Collector-emitter voltage (5) Collector-base voltage (4) Unit 0.3 Limits 0~0.1 0.1Min. Symbol Parameter 0.9 zAbsolute maximum ratings (Ta=25°C) 0.7 0.15 2.1 Each lead has same dimensions Rev.A 1/2 EMX5 / UMX5N / IMX5 Transistors zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 20 − − V IC=10µA Conditions Collector-emitter breakdown voltage BVCEO 11 − − V IC=1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO 3 − − − − 0.5 V µA IE=10µA VCB=10V Emitter cutoff current IEBO − − 0.5 µA DC current transfer ratio hFE 56 − 120 − VCE/IC=10V/5mA IC/IB=10mA/5mA VCE(sat) − − 0.5 V Transition frequency fT 3.2 − GHz Output capacitance Cob 1.4 − 0.9 1.55 pF Collector-emitter saturation voltage VEB=2V ∗ VCE/IE=10V/−10mA, f=500MHz VCB/f=10V/1MHz, IE=0A ∗Transition frequency of the device. 200 100 50 20 0.5 1 2 5 10 20 50 200 100 50 Ic/IB=10 20 Ic/IB=2 10 0.1 0.2 COLLECTOR CURRENT : IC (mA) 2.0 Cob Cre 0.5 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 1 2 5 10 20 2.0 1.0 0.5 0.2 0.1 −0.1 −0.2 50 50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Capacitance vs. reverse bias voltage 50 −0.5 −1 −2 −5 −10 −20 −50 EMITTER CURRENT : IE (mA) Fig.2 Collector-emitter saturation voltage vs. collector current COLLECTOR TO BASE TIME CONSTANT : Cc rbb'(ps) OUTPUT CAPACITANCE : Cob (pF) FEEDBACK CAPACITANCE : Cre (pF) Ta=25°C f=1MHz IE=0A 1.0 0.5 Ta=25°C VCE=10V COLLECTOR CURRENT : IC (mA) Fig.1 DC current gain vs. collector current 5.0 5.0 Ta=25°C Fig.3 Gain bandwidth product vs. emitter current Ta=25°C VCE=6V f=500MHz Ta=25°C VCE=10V f=31.8MHz NOISE FIGURE : NF (dB) 10 0.1 0.2 500 TRANSITION FREQUENCY : fT (GHz) Ta=25°C VCE=10V 500 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) DC CURRENT TRANSFER RATIO : hFE zElectrical characteristics curves 20 10 5.0 20 10 2.0 1.0 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.5 Collector to base time constant vs. collector current characteristics 0 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.6 Noise factor vs. collector current characteristics Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1