UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES * Internal free-wheeling diode * Makes efficient anti-saturation operation * Low variable storage-time spread * Low base drive * Very suitable for half bridge light ballast application SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free SOT-223 5302DG-AA3-R 5302DL-T60-K 5302DG-T60-K TO-126 5302DL-T92-B 5302DG-T92-B TO-92 5302DL-T92-K 5302DG-T92-K TO-92 5302DL-T92-R 5302DG-T92-R TO-92 5302DL-TM3-T 5302DG-TM3-T TO-251 5302DL-TN3-R 5302DG-TN3-R TO-252 Note: Pin assignment: E: Emitter B: Base C: Collector 5302DL-T60-T (1)Packing Type (2)Package Type (3)Green Package www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 B C E B C E E C B E C B E C B B C E B C E Packing Tape Reel Bulk Tape Box Bulk Tape Reel Tube Tape Reel (1) B: Tape Box, K: Bulk, T: Tube, R: Tape Reel (2) T60: TO-126, T92: TO-92, TM3: TO-251, TN3: TO-252, AA3: SOT-223 (3) L: Lead Free, G: Halogen Free and Lead Free 1 of 4 QW-R213-018.H 5302D NPN SILICON TRANSISTOR MARKING SOT-223 TO-251 / TO-252 TO-126 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R213-018. H 5302D NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC RATINGS 800 400 10 2 UNIT V V V A ICM IB IBM 4 1 2 12.5 1.6 25 1 A A A Collector Peak Current (tP<5ms) Base Current Base Peak Current (tP<5ms) Power Dissipation (TC≤25°С) TO-126 TO-92 TO-251/ TO-252 SOT-223 PD W Junction Temperature TJ +150 °С Storage Temperature TSTG -65 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-126 TO-92 TO-251/ TO-252 SOT-223 TO-126 TO-92 TO-251/ TO-252 SOT-223 θJA θJC RATINGS 122 160 100 175 10 80 5 125 UNIT °С/W °С/W ELECTRICAL CHARACTERISTICS (TA = 25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT1) VCE(SAT2) VBE(SAT1) VBE(SAT2) SWITCHING CHARACTERISTICS Turn On Time tON Fall Time tF Storage Time tSTG DIODE Forward Voltage Drop VF Fall Time tF Note: Pulsed duration = 300μS, Duty cycle≤2% TEST CONDITIONS IC=10mA, IE=0 (Note) IC=1mA, IB=0 IE=1mA, IC=0 VCB=800V, IE=0 VEB=9V, IC=0 400 800 10 VCE=5V, IC=10mA VCE=5V, IC=400mA VCE=5V, IC=1A IC=0.5A, IB=0.1A (Note) IC=1A, IB=0.25A (Note) IC=0.5A, IB=0.1A (Note) IC=1A, IB=0.25A (Note) 10 10 5 VCC=250V, IC=1A, IB1=IB2=0.2A, tP=25uS Duty Cycle<1% IC=1A IC=1A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 1 V V V μA μA 40 1.1 0.15 0.2 0.5 0.5 1.5 1.1 1.2 V V 0.3 0.4 0.9 μS μS μS 1.4 800 V μS 3 of 4 QW-R213-018. H 5302D NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector Current VS. BVCEO 14 1400 1200 Collector Current , IC(µA) Collector Current , IC(mA) 12 10 8 6 4 2 0 1000 800 600 400 200 0 0 0 200 300 100 400 500 600 Collector-Emitter Breakdown Voltage ,BVCEO (V) 400 200 600 800 1000 Collector-Base Breakdown Voltage ,BVCBO (V) Emitter Current VS. BVEBO 140 Current Gain vs. Collector Current 100 120 100 DC current gain hEF Emitter Current , IE(µA) Collector Current VS. BVCBO 80 60 40 50 TC=100°C 40 TC=25°C 30 20 TC=-40°C 10 7 5 20 0 0 2 4 6 8 10 12 14 16 18 20 Emitter-Base Breakdown Voltage ,BVEBO (V) Common emitter VCE=5V 1 0.01 0.05 0.1 0.2 0.5 1 2 10 Collector Current, IC (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R213-018. H