UTC-IC 5303D

UNISONIC TECHNOLOGIES CO., LTD
5303D
Preliminary
NPN SILICON TRANSISTOR
HIGH VOLTAGE NPN
TRANSISTOR WITH DIODE
„
DESCRIPTION
The UTC 5303D is a high voltage silicon triple diffused type
NPN transistor with diode. This chip is built in free-wheeling
diode , makeing efficient anti-saturation operation.
„
1
TO-251
FEATURES
* Not Necessary to Interest an hFE Value
* Need Very Low Base Drive
* Can Be Used In Half Bridge Light Ballast Application
„
INTERNAL SCHEMATIC DIAGRAM
(2) C
Lead-free:
5303DL
Halogen-free:5303DG
(1) B
(3) E
„
ORDERING INFORMATION
Normal
5303D-TM3-T
Ordering Number
Lead Free Plating
5303DL-TM3-T
Halogen Free
5303DG-TM3-T
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
Package
TO-251
Pin Assignment
1
2
2
B
C
E
Packing
Tube
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5303D
„
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta = 25°С,unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
2
A
Collector Peak Current (tp<5ms)
4
A
ICM
Base Current
IB
1
A
Base Peak Current (tp<5ms)
IBM
2
A
Collector Dissipation (TC≤25°С)
PC
25
W
Maximum Operating Junction Temperature
TJ
+150
°С
Storage Temperature Range
TSTG
-65~+150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
SYMBOL
θJA
θJC
Junction to Ambient
Junction to Case
„
RATINGS
100
6.25
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS (Ta = 25°С,unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Breakdown Voltage (Note)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage (Note)
SWITCHING CHARACTERISTICS
Turn On Time
Storage Time
Fall Time
Diode
Forward Voltage Drop
Fall Time
Note: Pulsed duration = 300µS, duty cycle ≤2%
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(SAT1)
VCE(SAT2)
VBE(SAT)
VBE(SAT2)
MIN
IC = 1mA, IB = 0
IC = 10mA, IE = 0
IE = 1mA, IC = 0
VCB = 700V, IE = 0
VEB = 9V, IC = 0
700
400
10
VCE =5V, IC =10mA
VCE =5V, IC =400mA
VCE =5V, IC =1A
IC =0.5A, IB =0.1A
IC =1A, IB =0.25A
IC =0.5A, IB =0.1A
IC =1A, IB =0.25A
10
10
5
tON
tSTG
tF
VCC =250V, IC =1A,
IB1=IB2 =0.2A, tp =25uS Duty
Cycle<1%
VF
tF
IC =1A
IC =1A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
TYP
MAX UNIT
V
V
V
µA
µA
1
1
30
1.1
0.15
0.5
0.2
0.5
1.5
1.1
1.2
V
V
V
V
0.3
0.9
0.4
µS
µS
µS
1.4
800
V
µS
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5303D
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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