UNISONIC TECHNOLOGIES CO., LTD 5302 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION The UTC 5302 is a NPN silicon planar transistor and suited to be used in power amplifier applications. 1 TO-251 FEATURES * Makes efficient anti-saturation operation * Low variable storage-time spread * Low base drive * Very suitable for half bridge light ballast application SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5302L-TM3-T 5302G-TM3-T Note: Pin Assignment: B: Base C: Collector E: Emitter 5302L-TM3-T Package TO-251 Pin Assignment 1 2 3 B C E (1)Packing Type (1) T: Tube (2)Package Type (2) TM3: TO-251 (3)Lead Free (3) G: Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Packing Tube 1 of 4 QW-R213-020.A 5302 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V Collector Current IC 2 A Collector Peak Current (tp<5ms) 4 A ICM Base Current IB 1 A Base Peak Current (tp<5ms) 2 A IBM 25 W Power Dissipation (TC≤25°С) PD Junction Temperature TJ +150 °С Storage Temperature TSTG -65 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 100 5 UNIT °С/W °С/W 2 of 4 QW-R213-020.A 5302 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta = 25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT1) VCE(SAT2) VBE(SAT1) VBE(SAT2) SWITCHING CHARACTERISTICS Turn On Time tON Fall Time tF Storage Time tSTG Note: Pulsed duration = 300μS, Duty cycle≤2% TEST CONDITIONS IC=10mA, IE=0 (Note) IC=1mA, IB=0 IE=1mA, IC=0 VCB=800V, IE=0 VEB=9V, IC=0 400 800 10 VCE=5V, IC=10mA VCE=5V, IC=400mA VCE=5V, IC=1A IC=0.5A, IB=0.1A (Note) IC=1A, IB=0.25A (Note) IC=0.5A, IB=0.1A (Note) IC=1A, IB=0.25A (Note) 10 10 5 VCC=250V, IC=1A, IB1=IB2=0.2A, tP=25uS Duty Cycle<1% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 1 V V V μA μA 30 1.1 0.15 0.2 0.5 0.5 1.5 1.1 1.2 0.3 0.4 0.9 V V μS μS μS 3 of 4 QW-R213-020.A 5302 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector Current VS. BVCEO 14 1400 1200 Collector Current , IC(µA) Collector Current , IC(mA) 12 10 8 6 4 2 0 0 200 300 100 400 500 600 Collector-Emitter Breakdown Voltage ,BVCEO (V) 1000 800 600 400 200 0 0 400 200 600 800 1000 Collector-Base Breakdown Voltage ,BVCBO (V) Emitter Current VS. BVEBO 140 Emitter Current , IE(µA) Collector Current VS. BVCBO 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 Emitter-Base Breakdown Voltage ,BVEBO (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R213-020.A