Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBTA92
PNP SILICON TRANSISTOR
HIGH VOLTAGE PNP
TRANSISTOR

3
DESCRIPTION
The UTC MMBTA92 are high voltage PNP transistors, designed
for telephone signal switching and for high voltage amplifier.

2
1
SOT-23
FEATURES
(JEDEC TO-236)
* High Collector-Emitter voltage: VCEO= -300V
* Collector Dissipation: PC(MAX)=350mW

ORDERING INFORMATION
Ordering Number
Note:

MMBTA92G-AE3-R
Pin Assignment: E: Emitter
Package
B: Base
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MMBTA92

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
TA=25°C
350
mW
PC
Collector Dissipation TC=25°C
1.5
W
Derate Above Ta >25°C
12
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
TEST CONDITIONS
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-200V, IE=0
VEB=-3V, IC=0
VCE=-10V, IC=-1mA
DC Current Gain (Note)
hFE
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
Collector-Emitter Saturation Voltage
VCE(SAT)1 IC=-20mA, IB=-2mA
Base-Emitter Saturation Voltage
VBE(SAT)1 IC=-20mA, IB=-2mA
Current Gain Bandwidth Product
fT
VCE=-20V, IC=-10mA, f=100MHz
Collector Base Capacitance
Ccb
VCB=-20V, IE=0, f=1MHz
Note: Pulse test: PW<300μs, Duty Cycle<2%, VCE(SAT)1<200mV (Class SIN)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
-300
V
-300
V
-5
V
-0.25 μA
-0.10 μA
60
80
80
-0.5
V
-0.90 V
50
MHz
6
pF
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MMBTA92
TYPICAL CHARACTERISTICS
Saturation Voltage
DC Current Gain
103
-104
IC=10*IB
VCE(SAT), VBE(SAT) (mV)
DC Current Gain, hFE
VCE=-10V
102
101
100
-100
-10
1
-10
2
-10
3
4
-10
VBE(SAT)
-102
-101
-100
-101
Current Gain Bandwidth
Product (MHz)
101
1
-10
-10
-10
Collector-Base Voltage(V)
VCE=-20V
f=100MHz
102
CCB
-10
-104
Current Gain Bandwidth Product
CIB
0
-103
103
10
-1
-102
Collector Current, IC (mA)
Capacitance
2
VCE(SAT)
-103
Collector Current, IC (mA)
CIB(pF), CCB(pF)

PNP SILICON TRANSISTOR
2
101
-100
-101
-102
Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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