UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772L is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SD882L TO-92L 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT VCBO VCEO VEBO Pc Ic Ic IB Tj TSTG -40 -30 -5 0.5 -3 -7 -0.6 150 -55 ~ +150 V V V W A A A °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation( Ta=25°C) Collector Current(DC) Collector Current(PULSE) Base Current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note 1) SYMBOL ICBO IEBO hFE1 hFE2 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1:Pulse test:PW<300µs,Duty Cycle<2% UTC TEST CONDITIONS VCB=-30V,IE=0 VEB=-3V,Ic=0 VCE=-2V,Ic=-20mA VCE=-2V,Ic=-1A Ic=-2A,IB=-0.2A Ic=-2A,IB=-0.2A VCE=-5V,Ic=-0.1A VCB=-10V,IE=0,f=1MHz UNISONIC TECHNOLOGIES MIN TYP MAX UNIT -1000 -1000 30 100 200 150 -0.3 -1.0 80 45 400 -0.5 -2.0 CO. LTD nA nA V V MHz pF 1 QW-R202-005,A UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE2 RANK RANGE Q 100-200 P 160-320 E 200-400 TYPICAL PERFORMANCE CHARACTERISTICS Fig.2 Derating curve of safe operating areas Fig.1 Static characteristics Fig.3 Power Derating -IB=6mA -IB=5mA -IB=4mA S/ b 50 lim -IB=1mA 0 0 4 8 12 16 20 0 50 100 150 200 -50 Tc,Case Temperature(°C) Fig.4 Collector Output capacitance 10 0 -1 10 VCE=5V 2 10 IB=8mA 1 10 0 10 -3 10 -Ic,Collector current(A) FT(MHz), Current gainbandwidth product -2 10 1 10 -2 10 -1 10 10 0 1 10 Ic(max),Pulse Ic(max),DC 10 Fig.7 DC current gain 150 200 10 mS 1m S 0 -1 10 -2 10 10 0 1 10 2 10 Collector-Emitter Voltage Ic,Collector current(A) -Collector-Base Voltage(v) 100 S 1m 0. 1 10 50 Fig.6 Safe operating area 3 10 IE=0 f=1MHz 0 Tc,Case Temperature(°C) Fig.5 Current gainbandwidth product 3 10 0 10 4 0 -50 -Collector-Emitter voltage(V) 2 10 8 d ite -IB=2mA 0 Output Capacitance(pF) lim ite d n tio -IB=3mA 0.4 100 pa si is 0.8 12 Power Dissipation(W) 1.2 - Ic Derating(%) -IB=9mA -IB=8MA -IB=7mA D -Ic,Collector current(A) 150 1.6 Fig.8 Saturation Voltage 3 10 4 10 -Saturation Voltage(mV) DC current Gain,H FE VCE=-2V 2 10 1 10 0 10 0 10 1 10 2 10 3 10 -Ic,Collector current(mA) UTC 4 10 VBE(sat) 3 10 2 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 -Ic,Collector current(mA) UNISONIC TECHNOLOGIES CO. LTD 2 QW-R202-005,A UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R202-005,A