SECOS 2SB772L

2SB772L
PNP Type
Elektronische Bauelemente
Epitaxial Transistors
RoHS Compliant Product
TO-251
A suffix of "-C" specifies halogen & lead-free
Description
2.3±0.1
6.6±0.2
5.3±0.2
The 2SB772L os designed for using in output stage of
10W amplifier, voltage regulator, DC-DC converter and
relay driver.
0.5±0.05
7.0±0.2
5.6±0.2
1.2±0.3
0.75±0.15
7.0±0.2
0.6±0.1
0.5±0.1
2.3REF.
G
D
S
Dimensions in millimeters
o
MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified)
Symbol
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
-30
V
-5
V
IC
IB
PD
TJ,Tstg
Parameter
Collector Current (DC)
-3
Collector Current (Pulse)
-7
Base Current
-0.6
A
10
W
Total Power Dissipation
Junction and Storage Temperature
A
-55~+150
C
O
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
I CES
Emitter-Base Cutoff Current
I EBO
Collector Saturation Voltage
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
Base Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Min
-40
-30
-5
30
100
-
fT
Cob
Typ.
-0.3
Max
-
Unit
V
V
V
-1
-1
-0.5
-1
-
-2
-
uA
uA
V
V
-
500
-
80
55
Test Conditions
I C=-100µA,IE=0
I C=-1mA,IB=0
I E=-10µA,IC=0
VCB=-30V,IE=0
VEB=- 3V,IC=0
I C=- 2 A,IB=-0.2 A
I C=- 2 A,IB=-0.2 A
VCE=- 2 V, I C=-20 mA
VCE=- 2 V, I C=-20 mA
MH z
VCE=- 5 V, IC=-0.1mA,, f=100MHz
pF
VCB=-10 V , f=1MHz,IE=0
*Pulse test: Pulse width≦380 µs, Duty Cycle≦2%
Classification of hFE
Rank
Range
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Q
R
S
100~200
160~320
250~500
Any changing of specification will not be informed individual
Page 1 of 3
2SB772L
Elektronische Bauelemente
PNP Type
Epitaxial Transistors
Typical Characteristics
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individu
Page 2 of 3
2SB772L
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
PNP Type
Epitaxial Transistors
Any changing of specification will not be informed individu
Page 3 of 3