UNISONIC TECHNOLOGIES CO., LTD 5303D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5303D is a high voltage silicon triple diffused type NPN transistor with diode. This chip is built in free-wheeling diode , makeing efficient anti-saturation operation. 1 TO-251 FEATURES * Not Necessary to Interest an hFE Value * Need Very Low Base Drive * Can Be Used In Half Bridge Light Ballast Application INTERNAL SCHEMATIC DIAGRAM (2) C Lead-free: 5303DL Halogen-free:5303DG (1) B (3) E ORDERING INFORMATION Normal 5303D-TM3-T Ordering Number Lead Free Plating 5303DL-TM3-T Halogen Free 5303DG-TM3-T www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Package TO-251 Pin Assignment 1 2 2 B C E Packing Tube 1 of 3 QW-R223-004.a 5303D Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta = 25°С,unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V Collector Current IC 2 A Collector Peak Current (tp<5ms) 4 A ICM Base Current IB 1 A Base Peak Current (tp<5ms) IBM 2 A Collector Dissipation (TC≤25°С) PC 25 W Maximum Operating Junction Temperature TJ +150 °С Storage Temperature Range TSTG -65~+150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA θJC Junction to Ambient Junction to Case RATINGS 100 6.25 UNIT °С/W °С/W ELECTRICAL CHARACTERISTICS (Ta = 25°С,unless otherwise noted) PARAMETER OFF CHARACTERISTICS Collector-Base Voltage Collector-Emitter Breakdown Voltage (Note) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage (Note) Base-Emitter Saturation Voltage (Note) SWITCHING CHARACTERISTICS Turn On Time Storage Time Fall Time Diode Forward Voltage Drop Fall Time Note: Pulsed duration = 300µS, duty cycle ≤2% SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT1) VCE(SAT2) VBE(SAT) VBE(SAT2) MIN IC = 1mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 700 400 10 VCE =5V, IC =10mA VCE =5V, IC =400mA VCE =5V, IC =1A IC =0.5A, IB =0.1A IC =1A, IB =0.25A IC =0.5A, IB =0.1A IC =1A, IB =0.25A 10 10 5 tON tSTG tF VCC =250V, IC =1A, IB1=IB2 =0.2A, tp =25uS Duty Cycle<1% VF tF IC =1A IC =1A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS TYP MAX UNIT V V V µA µA 1 1 30 1.1 0.15 0.5 0.2 0.5 1.5 1.1 1.2 V V V V 0.3 0.9 0.4 µS µS µS 1.4 800 V µS 2 of 3 QW-R223-004.a 5303D Preliminary NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R223-004.a