VBUS051BD-HD1 Datasheet

VBUS051BD-HD1
www.vishay.com
Vishay Semiconductors
Low Capacitance, Single-Line ESD-Protection Diode
FEATURES
• Ultra compact LLP1006-2L package
• Low package profile < 0.4 mm
• 1-line ESD-protection
1
2
• High surge current acc. IEC 61000-4-5
IPPM > 3 A
20856
• Low leakage current IR < 0.1 μA
20855
• Low load capacitance CD = 0.9 pF
• ESD-protection acc. IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge
MARKING (example only)
• Soldering can be checked by standard vision inspection;
no X-ray necessary
XY
• Pin plating NiPdAu (e4) no whisker growth
21121
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
Bar = cathode marking
Y = type code (see table below)
X = date code
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
VBUS051BD-HD1
ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VBUS051BD-HD1-GS08
8000
8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VBUS051BD-HD1
LLP1006-2L
A
0.72 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS VBUS051BD-HD1
PARAMETER
TEST CONDITIONS
SYMBOL
Peak pulse current
Acc. IEC 61000-4-5; tp = 8/20 μs; single shot
IPPM
3
A
Peak pulse power
Acc. IEC 61000-4-5; tp = 8/20 μs; single shot
PPP
45
W
± 15
kV
± 15
kV
TJ
-55 to +145
°C
TSTG
-55 to +150
°C
ESD immunity
Operating temperature
Storage temperature
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
VESD
VALUE
UNIT

PATENT(S): www.vishay.com/patents 
This Vishay product is protected by one or more United States and International patents.
Rev. 2.2, 05-Feb-16
Document Number: 81785
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS051BD-HD1
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VBUS051BD-HD1 
(Ratings at 25 °C ambient temperature, unless otherwise specified)
PARAMETER
Protection paths
Reverse stand-off voltage
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
5
V
Reverse voltage
at IR = 0.1 μA; pin 2 to pin 1
VR
5
-
-
V
Reverse current
at VR = VRWM = 5 V; pin 2 to pin 1
IR
-
< 0.01
0.1
μA
at IR = 1 mA; pin 2 to pin 1
VBR
6.9
7.9
8.7
V
Reverse clamping voltage
at IPP = 3 A; acc. IEC 61000-4-5; pin 2 to pin 1
VC
-
-
16
V
Forward clamping voltage
at IF = 3 A; acc. IEC 61000-4-5; pin 1 to pin 2
VF
-
3.4
4
V
at VR = 0 V; f = 1 MHz; pin 2 to pin 1
CD
-
0.9
1.3
pF
Reverse breakdown voltage
Capacitance
APPLICATION NOTE
The VBUS051BD-HD1 is an ESD-protection device with the characteristic of a Z-diode with a high ESD-immunity and a very
low capacitance which makes it usable for high frequency applications like USB2.0 or HDMI.
With the VBUS051BD-HD1 one high speed data line can be protected against transient voltage signals like ESD (electro static
discharge). Connected to the data line (pin 2) and to ground (pin 1) negative transients will be clamped close below the ground
level while positive transients will be clamped close above the 5 V working range. The clamping behavior of the
VBUS051BD-HD1 is bidirectional but asymmetrical (BiAs) and so it offers the best protection for applications running up to 5 V.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
120 %
Rise time = 0.7 ns to 1 ns
8 µs to 100 %
100 %
80 %
80 %
60 %
60 %
IPPM
Discharge Current IESD
100 %
53 %
40 %
27 %
20 %
20 %
0%
-10 0 10 20 30 40 50 60 70 80 90 100
20557
Time (ns)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Rev. 2.2, 05-Feb-16
20 µs to 50 %
40 %
0%
0
20548
10
20
30
40
Time (µs)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Document Number: 81785
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS051BD-HD1
www.vishay.com
Vishay Semiconductors
2.5
16
f = 1 MHz
14
Positive surge
12
2
8
1.5
VC (V)
CD (pF)
10
1
Measured
acc. IEC 61000-4-5
(8/20 µs - wave form)
6
4
VC
2
0
0.5
-2
Negative surge
-4
-6
0
0
1
2
3
4
5
0
6
20882
VR (V)
21421
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
2
3
IPP (A)
Fig. 6 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
100
16
Acc. IEC 61000-4-2
+ 200 V
contact discharge
14
10
12
VC-ESD (V)
IF (mA)
1
1
0.1
10
8
6
4
2
0.01
0
0.001
0.5
0.6
0.7
20880
0.8
0.9
1
-2
- 10 0
1.1
VF (V)
20883
Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF
2
8
0
7
-2
VC-ESD (V)
VR (V)
6
5
4
3
-4
-8
- 10
1
- 12
0.1
1
10
100 1000 10 000
IR (µA)
Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR
Rev. 2.2, 05-Feb-16
Acc. IEC 61000-4-2
- 200 V
contact discharge
-6
2
20881
t (ns)
Fig. 7 - Typical Clamping Performance at + 200 V
Contact Discharge (acc. IEC 61000-4-2)
9
0
0.01
10 20 30 40 50 60 70 80 90
- 14
- 10 0 10 20 30 40 50 60 70 80 90
20884
t (ns)
Fig. 8 - Typical Clamping Performance at - 200 V
Contact Discharge (acc. IEC 61000-4-2)
Document Number: 81785
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS051BD-HD1
www.vishay.com
Vishay Semiconductors
100
Acc. IEC 61000-4-2
+ 8 kV
contact discharge
80
VC-ESD (V)
60
40
20
0
- 20
- 10 0
10 20 30 40 50 60 70 80 90
t (ns)
21422
Fig. 9 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
20
0
- 20
VC-ESD (V)
- 40
Acc. IEC 61000-4-2
- 8 kV
contact discharge
- 60
- 80
- 100
- 120
- 140
- 160
- 10 0
10 20 30 40 50 60 70 80 90
t (ns)
21423
Fig. 10 - Typical Clamping Performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
300
Acc. IEC 61000-4-2
contact discharge
VC-ESD (V)
200
100
0
VC-ESD
- 100
- 200
- 300
0
21424
5
10
15
20
VESD (kV)
Fig. 11 - Typical Peak. Clamping Voltage at ESD Contact Discharge
(acc. IEC 61000-4-2)
Rev. 2.2, 05-Feb-16
Document Number: 81785
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS051BD-HD1
www.vishay.com
Vishay Semiconductors
0.25 [0.010]
0.15 [0.006]
PACKAGE DIMENSIONS in millimeters (inches) LLP1006-2L
0.65 [0.026]
0.55 [0.022]
Orientation identification
0.05 [0.002]
0 [0.000]
0.4 [0.016]
0.33 [0.013]
0.45 [0.018]
0.35 [0.014]
0.125 [0.005] ref.
0.55 [0.022]
0.45[0.018]
0.3 [0.012]
0.2 [0.008]
1.05 [0.041]
0.95 [0.037]
1 [0.039]
solder resist mask
solder pad
0.05 [0.002]
Document no.: S8-V-3906.04-005 (4)
Rev. 6 - Date: 15.July 2015
20812
0.2 [0.008]
0.5 [0.020]
0.6 [0.024]
Foot print recommendation:
0.25 [0.010]
0.5 [0.020]
soldermask opening ± 0.03
measured middle of the package
Unreeling direction
Bidirectional
LLP1006-xx
Pin 1 mark
Top view
Rev. 2.2, 05-Feb-16
Pad layout - view from top
seen at bottom side
Document Number: 81785
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000