VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • Ultra compact LLP1006-2L package • Low package profile < 0.4 mm • 1-line ESD-protection 1 2 • High surge current acc. IEC 61000-4-5 IPPM > 3 A 20856 • Low leakage current IR < 0.1 μA 20855 • Low load capacitance CD = 0.9 pF • ESD-protection acc. IEC 61000-4-2 ± 15 kV contact discharge ± 15 kV air discharge MARKING (example only) • Soldering can be checked by standard vision inspection; no X-ray necessary XY • Pin plating NiPdAu (e4) no whisker growth 21121 • e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) Bar = cathode marking Y = type code (see table below) X = date code • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ORDERING INFORMATION DEVICE NAME VBUS051BD-HD1 ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY VBUS051BD-HD1-GS08 8000 8000 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VBUS051BD-HD1 LLP1006-2L A 0.72 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS VBUS051BD-HD1 PARAMETER TEST CONDITIONS SYMBOL Peak pulse current Acc. IEC 61000-4-5; tp = 8/20 μs; single shot IPPM 3 A Peak pulse power Acc. IEC 61000-4-5; tp = 8/20 μs; single shot PPP 45 W ± 15 kV ± 15 kV TJ -55 to +145 °C TSTG -55 to +150 °C ESD immunity Operating temperature Storage temperature Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD VALUE UNIT PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and International patents. Rev. 2.2, 05-Feb-16 Document Number: 81785 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS051BD-HD1 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VBUS051BD-HD1 (Ratings at 25 °C ambient temperature, unless otherwise specified) PARAMETER Protection paths Reverse stand-off voltage TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 5 V Reverse voltage at IR = 0.1 μA; pin 2 to pin 1 VR 5 - - V Reverse current at VR = VRWM = 5 V; pin 2 to pin 1 IR - < 0.01 0.1 μA at IR = 1 mA; pin 2 to pin 1 VBR 6.9 7.9 8.7 V Reverse clamping voltage at IPP = 3 A; acc. IEC 61000-4-5; pin 2 to pin 1 VC - - 16 V Forward clamping voltage at IF = 3 A; acc. IEC 61000-4-5; pin 1 to pin 2 VF - 3.4 4 V at VR = 0 V; f = 1 MHz; pin 2 to pin 1 CD - 0.9 1.3 pF Reverse breakdown voltage Capacitance APPLICATION NOTE The VBUS051BD-HD1 is an ESD-protection device with the characteristic of a Z-diode with a high ESD-immunity and a very low capacitance which makes it usable for high frequency applications like USB2.0 or HDMI. With the VBUS051BD-HD1 one high speed data line can be protected against transient voltage signals like ESD (electro static discharge). Connected to the data line (pin 2) and to ground (pin 1) negative transients will be clamped close below the ground level while positive transients will be clamped close above the 5 V working range. The clamping behavior of the VBUS051BD-HD1 is bidirectional but asymmetrical (BiAs) and so it offers the best protection for applications running up to 5 V. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 120 % Rise time = 0.7 ns to 1 ns 8 µs to 100 % 100 % 80 % 80 % 60 % 60 % IPPM Discharge Current IESD 100 % 53 % 40 % 27 % 20 % 20 % 0% -10 0 10 20 30 40 50 60 70 80 90 100 20557 Time (ns) Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) Rev. 2.2, 05-Feb-16 20 µs to 50 % 40 % 0% 0 20548 10 20 30 40 Time (µs) Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Document Number: 81785 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS051BD-HD1 www.vishay.com Vishay Semiconductors 2.5 16 f = 1 MHz 14 Positive surge 12 2 8 1.5 VC (V) CD (pF) 10 1 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 6 4 VC 2 0 0.5 -2 Negative surge -4 -6 0 0 1 2 3 4 5 0 6 20882 VR (V) 21421 Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR 2 3 IPP (A) Fig. 6 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP 100 16 Acc. IEC 61000-4-2 + 200 V contact discharge 14 10 12 VC-ESD (V) IF (mA) 1 1 0.1 10 8 6 4 2 0.01 0 0.001 0.5 0.6 0.7 20880 0.8 0.9 1 -2 - 10 0 1.1 VF (V) 20883 Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF 2 8 0 7 -2 VC-ESD (V) VR (V) 6 5 4 3 -4 -8 - 10 1 - 12 0.1 1 10 100 1000 10 000 IR (µA) Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR Rev. 2.2, 05-Feb-16 Acc. IEC 61000-4-2 - 200 V contact discharge -6 2 20881 t (ns) Fig. 7 - Typical Clamping Performance at + 200 V Contact Discharge (acc. IEC 61000-4-2) 9 0 0.01 10 20 30 40 50 60 70 80 90 - 14 - 10 0 10 20 30 40 50 60 70 80 90 20884 t (ns) Fig. 8 - Typical Clamping Performance at - 200 V Contact Discharge (acc. IEC 61000-4-2) Document Number: 81785 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS051BD-HD1 www.vishay.com Vishay Semiconductors 100 Acc. IEC 61000-4-2 + 8 kV contact discharge 80 VC-ESD (V) 60 40 20 0 - 20 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) 21422 Fig. 9 - Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 20 0 - 20 VC-ESD (V) - 40 Acc. IEC 61000-4-2 - 8 kV contact discharge - 60 - 80 - 100 - 120 - 140 - 160 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) 21423 Fig. 10 - Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) 300 Acc. IEC 61000-4-2 contact discharge VC-ESD (V) 200 100 0 VC-ESD - 100 - 200 - 300 0 21424 5 10 15 20 VESD (kV) Fig. 11 - Typical Peak. Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) Rev. 2.2, 05-Feb-16 Document Number: 81785 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS051BD-HD1 www.vishay.com Vishay Semiconductors 0.25 [0.010] 0.15 [0.006] PACKAGE DIMENSIONS in millimeters (inches) LLP1006-2L 0.65 [0.026] 0.55 [0.022] Orientation identification 0.05 [0.002] 0 [0.000] 0.4 [0.016] 0.33 [0.013] 0.45 [0.018] 0.35 [0.014] 0.125 [0.005] ref. 0.55 [0.022] 0.45[0.018] 0.3 [0.012] 0.2 [0.008] 1.05 [0.041] 0.95 [0.037] 1 [0.039] solder resist mask solder pad 0.05 [0.002] Document no.: S8-V-3906.04-005 (4) Rev. 6 - Date: 15.July 2015 20812 0.2 [0.008] 0.5 [0.020] 0.6 [0.024] Foot print recommendation: 0.25 [0.010] 0.5 [0.020] soldermask opening ± 0.03 measured middle of the package Unreeling direction Bidirectional LLP1006-xx Pin 1 mark Top view Rev. 2.2, 05-Feb-16 Pad layout - view from top seen at bottom side Document Number: 81785 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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